3D ES势垒对Cu(111)和Cu(001)晶面同质外延生长的影响（英文）

三维3D ES势垒直接影响着层间扩散,在Cu(111)和Cu(100)面2D ES势垒和3D ES势垒是不同的。本文主要研究了基于(1+1)维KMC模型,在这两个特殊的晶面上Cu薄膜的同质外延生长。观察两个面的生长情况,发现随着温度的增加薄膜的粗糙度逐渐减小,由于Cu(111)表面2D ES势垒较小,所以Cu(111)面粗糙度的下降的速度比Cu(100)要快,Cu(111)表面更有利于薄膜的生长。对于纳米棒的应用,在生长时间较短时两个面的生长速率逐渐减小,但是Cu(100)面的生长速度比Cu(111)面更快,随着生长时间的增加,这两个面会出现多层台阶,Cu(111)面的生长速度会逐渐增加,最终会超过了Cu(100)面。多层台阶出现后对两个面的影响是不同的。由于Cu(111)表面3D ES势垒较大,在Cu(111)表面会形成较多的多层台阶,Cu(111)面上多层台阶数有利于纳米棒的生长,然而在Cu(100)表面3D ES势垒较小,Cu(100)表面很难形成多层台阶,所以Cu(100)面上纳米棒的生长速度并没有增加。正是因为3D ES势垒的存在才会导致多层台阶的出现,较大的3D ES势垒有利于纳米棒的生长。     

SrTiO3斜切基片上外延生长YBa2Cu3O7-δ薄膜的扫描探针显微镜研究

采用激光脉冲沉积法在钛酸锶SrTiO3 (0 0 1)斜切基片上外延生长YBa2 Cu3 O7 δ薄膜 ,在大气环境下采用扫描探针显微镜对YBa2 Cu3 O7 δ薄膜的表面纳米形貌进行直接观察。发现YBa2 Cu3 O7 δ薄膜具有相对光滑的表面形貌 ,薄膜表面由沿SrTiO3台阶趋向外延生长的纳米台阶组成 ,薄膜生长模式主要以台阶媒体生长为主。     

SrTiO3斜切基片上外延生长YBa2Cu3O7—δ薄膜的扫描探针显微镜研究

采用激光脉冲沉积法在钛酸锶SrTiO3（001）斜切基片上外延生长YBa2Cu3O7-δ薄膜，在大气环境下采用扫描探针显微镜对YBa2Cu3O7-δ薄膜的表面纳米形貌进行直接观察。发现YBa2Cu3O7-δ薄膜具有相对光滑的表面形貌，薄膜表面由沿SrTiO3台阶趋向外延生长的纳米台阶组成，薄膜生长模式主要以台阶媒体生长为主。     

基于第一性原理的氧化银纳米薄膜光学性质的研究北大核心CSCD

采用密度泛函理论构建了氧化银表面结构,并分析了薄膜厚度对结构稳定性及光学性质的影响规律,得出了氧化银(100)、(110)和(111)纳米薄膜的折射率、介电函数。研究表明,纳米薄膜的折射率、介电函数在可见光波段均低于块体,对(100)和(110)面来说,随着薄膜厚度的增加,其折射率、介电函数实部逐渐增加并接近于块体。而对于消光系数来讲,这三个表面构成的纳米薄膜均低于块体,尤其(111)面的吸收相对于另外两个面来说更小,其中21层和24层相对更小。因此可以得出结论:由氧化银纳米薄膜构建的光存储和磁光存储纳米薄膜器件,具有更高的透过率。     

磁控溅射制备Cu底层的实验研究

使用射频磁控溅射方法在载玻片上制备Cu薄膜,并通过调整其溅射参数来改变Cu薄膜的内部结构.实验结果表明:当基的片加热温度为100～150℃、薄膜厚度为405 nm、溅射功率为150～300 W时,所制得的沿(111)面择优生长的Cu薄膜的Ⅰ(111)/Ⅰ(200)均大于15,可作为SmCo5垂直磁化薄膜的衬底层.     

基于第一性原理的氧化银纳米薄膜光学性质的研究

采用密度泛函理论构建了氧化银表面结构,并分析了薄膜厚度对结构稳定性及光学性质的影响规律,得出了氧化银(100)、(110)和(111)纳米薄膜的折射率、介电函数。研究表明,纳米薄膜的折射率、介电函数在可见光波段均低于块体,对(100)和(110)面来说,随着薄膜厚度的增加,其折射率、介电函数实部逐渐增加并接近于块体。而对于消光系数来讲,这三个表面构成的纳米薄膜均低于块体,尤其(111)面的吸收相对于另外两个面来说更小,其中21层和24层相对更小。因此可以得出结论:由氧化银纳米薄膜构建的光存储和磁光存储纳米薄膜器件,具有更高的透过率。     

室温下Cu／3C—SiC（111）界面形成的研究

用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)的方法研究了室温下Cu/3C-SiC (111) 界面的形成.在超高真空下,Cu慢慢沉积到2ML.Cu2p3/2用XPS测得,结合能从沉积0.08ML时的933.1eV移动到沉积2ML的932.8eV,Si2p用同步辐射光测得,峰位从未沉积时的43.55eV移动到沉积2ML的43.87eV,峰形状未发生变化,表明Cu与衬底之间没有发生化学反应,薄膜的生长开始为二维生长,超过0.1ML时变为三维生长,SiC的表面有表面态存在,当沉积少量的Cu时,表面态消失.随着Cu的沉积价带(VB)发生弯曲,肖特基势垒高度增加,在沉积2ML Cu时肖特基势垒变为1.2eV.     

ZnO/Cu多层膜的制备及电磁屏蔽性能研究

采用磁控溅射法在涤纶水刺非织造布表面沉积纳米结构Cu单层膜和ZnO/Cu多层膜,利用原子力显微镜(AFM)对薄膜表面形貌进行分析,并利用四探针测试仪和矢量网络分析仪对样品的电学性能进行了测试。结果表明,在ZnO薄膜表面生长的Cu膜比在PET织物表面生长的Cu膜的均匀性、电学性能要好;在Cu镀膜时间相同的情况下,随着ZnO镀膜时间的增加,多层膜ZnO/Cu的电学性能先提高后降低,当ZnO镀膜时间为20min时,多层膜的电学性能达到最好;在ZnO镀膜时间相同的情况下,随着Cu镀膜时间的增加,多层膜ZnO/Cu的电学性能和织物表面颗粒均匀性经历了先提高、最后趋于稳定的过程,屏蔽效能最大平均值达到56dB。     

用水热法制备超疏水性ZnO纳米棒薄膜

采用简单的水热法制备了超疏水性ZnO纳米棒薄膜,在用磁控溅射在Si(111)衬底上生长一层ZnO籽晶层的基础上,利用水热法制备了空间取向一致的ZnO纳米棒阵列,经修饰后由亲水性转变为超疏水性.用扫描电子显微镜、X射线衍射对样品表面和结构特征进行了表征,用接触角测量仪测出水滴在ZnO纳米棒薄膜表面的接触角为(160±1)°,滚动角为5°.     

电弧离子镀TiN/Ti纳米多层膜的力学性能

采用多弧离子镀技术,在不同沉积参数下合成具有纳米调制周期的TiN/Ti多层膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、XP-2台阶仪、XP型纳米压痕仪、X射线能谱仪(EDS)研究了调制周期对TiN/Ti纳米多层膜微观结构、表面形貌以及力学性能的影响。结果表明,膜层由TiN和Ti交替组成,不存在其它杂相,且TiN薄膜以面心立方结构沿(111)密排面择优生长;TiN/Ti多层膜外观致密、平滑、颜色均匀金黄,随着调制周期的减小,薄膜表面大颗粒数量和尺寸均减小,且氮含量逐渐升高,膜层硬度呈现出增大的趋势。     

PTCDA on Cu(111) partially covered with NaCl

The organic molecule 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) was studied by means of scanning tunneling microscopy (STM) on thin insulating NaCl films grown on a Cu(111) single crystal. The deposition of approximately two monolayers (ML) of sodium chloride onto a Cu(111) substrate at a sample temperature of about 350 K causes a rather rough growth of (100)-oriented NaCl islands up to a local height of 4 ML. For submonolayer coverages (0.1 and 0.4 ML) of PTCDA on a Cu(111) surface partly covered with NaCl, two different rod structures of PTCDA were found on the copper surface, which are in contrast to previously published data for PTCDA on Cu(111) showing a herringbone-like arrangement. These findings can be explained by the formation of a Na(x)-PTCDA complex. On NaCl covered areas, single PTCDA molecules adsorb at vacancies of [010] and [001] oriented steps of the NaCl(100) islands. In this case, the electrostatic forces between the polar step edges and the PTCDA molecules are dominant. The terraces of the alkali halide surface are free of PTCDA molecules.     

Growth-induced atomic step ordering on patterned and non-patterned Si(111)

Atomic step configurations on the vicinal surfaces of patterned and non-patterned Si(111) during homoepitaxial step-flow growth were studied as a function of film thickness, deposition temperature, deposition rate, and substrate miscut. We found, for the first time, that step-flow growth on the vicinal surfaces of Si(111) miscut toward the [11 ] direction results in the formation of collective, in-phase zigzag arrays of [2 ]- and [1̄21̄]-type steps. We also found that step-flow growth on the lower-level region around the edge of Si(111) mesa ridges significantly improves period uniformity. We explained the shape of atomic steps on the basis of the stability of surface reconstruction on Si(111), and the atomic step ordering on the assumption of the anisotropic barrier for diffusion at the growing steps.     

Controllable electrodeposition of ordered carbon nanowalls on Cu(111) substrates

We report the growth of amorphous carbon nanowalls with molten salt electrolytes and a carbonate carbon source at 600 °C on home-made Cu(111) foil as the growth substrate (and cathode). The nanometer thick nanowalls grow preferentially along symmetric slip lines on the Cu(111) surface and their ordered arrangement appears to also be dictated by the electrosynthesis parameters. Computational chemistry suggests that nucleation of carbon growth is favored at the slip lines (atomic steps) of the Cu(111) surface. The electrodeposited carbon structures can be varied by tuning the potential on the electrodes and temperature of the molten salt. The macro, micro, and nanoscale structure of the nanowalls was studied and is reported.     

分子动力学模拟Gd原子在Cu低密勒表面的扩散过程

为了分析Gd吸附原子在Cu（001）、Cu（110）和Cu（111）表面的扩散机制，本文用分子动力学对该扩散过程进行模拟。模拟结果表明在Cu（001）和Cu（111）表面，Gd原子通过跳跃机制扩散；在Cu（110）表面，在[110]方向Gd原子通过跳跃机制扩散，而且多步跳跃频率很高，而在[001]方向则通过交换机制扩散。通过对扩散频率的拟合，发现在各种扩散机制都符合Arrhenius公式，从而确定了在Cu（001）和Cu（111）表面扩散势垒分别为0．19eV和0．013eV，在Cu（110）表面，沿[110]方向跳跃扩散势垒和沿[001]方向交换扩散势垒分别为0．097eV和0．33eV。     

Effects of polycrystalline cu substrate on graphene growth by chemical vapor deposition

Chemical vapor deposition of graphene on Cu often employs polycrystalline Cu substrates with diverse facets, grain boundaries (GBs), annealing twins, and rough sites. Using scanning electron microscopy (SEM), electron-backscatter diffraction (EBSD), and Raman spectroscopy on graphene and Cu, we find that Cu substrate crystallography affects graphene growth more than facet roughness. We determine that (111) containing facets produce pristine monolayer graphene with higher growth rate than (100) containing facets, especially Cu(100). The number of graphene defects and nucleation sites appears Cu facet invariant at growth temperatures above 900 °C. Engineering Cu to have (111) surfaces will cause monolayer, uniform graphene growth.     

Co nanoislands on Au(111) and Cu(111) surfaces studied by scanning tunneling microscopy and spectroscopy

Co nanoislands on the Au(111) and Cu(111) surfaces have been studied by scanning tunneling microscopy and spectroscopy. The experimental results showed that Co nanoislands prefer to aggregate at the step edge and dislocation sites on the reconstructed Au(111) surface and at the step edge on the Cu(111) surface, respectively. In addition, based on dZ/dV-V spectra, in both the Co/Au(111) and the Co/Cu(111) systems, Gundlach oscillation was observed. From the peak shift of dZ/dV-V spectra between Co nanoisland and substrate surface, we can quantitatively obtain that the constant energy separation is -0.13 +/- 0.01 eV for the Co/Au(111) system, and 0.41 +/- 0.02 eV for the Co/Cu(111) system, respectively. These values indicate the work function difference between Co nanoisland and these surfaces.     

用AFM研究硅基上沉积铜膜生长过程

室温下,利用磁控溅射在P型Si(111)衬底上沉积了铜(Cu)膜.用原子力显微镜(AFM)对不同沉积时间制备的Cu膜形貌进行了观测,研究了磁控溅射沉积Cu膜时膜在硅衬底上成核和生长方式.Cu膜在Si衬底生长时,Cu的临界核以Volmer-Weber模式生长.溅射时,核长大增高为岛状,岛与岛相互连接构成岛的通道,最后形成连续膜.随着沉积的进行,Cu膜表面粗糙度由于晶粒凝聚和合并而增大.当形成连续致密的、具有一定晶向的Cu膜时,粗糙度反而减小.     

Direct evidence of advantage of Cu(111) for graphene synthesis by using Raman mapping and electron backscatter diffraction

The advantageous crystallographic orientation of Cu surface for graphene synthesis by using thermal chemical vapor deposition (CVD) is examined by Raman mapping and electron backscatter diffraction. It is found that Cu(111) predominates over (110) and (100) for single- (SLG) or few-layer graphene (FLG) growth. To confirm this result we attempt the synthesis of graphene on Cu(111) single crystal film surfaces. We confirmed the formation of high quality and high uniformity SLG or FLG over more than 97% of the substrate surface area of 10 mm × 10 mm by Raman mapping.     

Cu films formed simultaneously on (111) and (100) NaCl

Copper films were deposited simultaneously in high vacuum on three different monocrystalline NaCl substrates: evaporated (111) NaCl on mica, evaporated (100) NaCl and air-cleaved (100) NaCl. The occurence and microstructure of monocrystalline or polycrystalline copper films were determined by transmission electron microscopy and diffraction as a function of deposition rate R and substrate temperature T. When log R was plotted against 1/T, straight lines could be drawn separating the monocrystalline and the polycrystalline regions. Activation energies for the polycrystalline to monocrystalline transition of Cu films were calculated to be 1.48, 1.22 and 1.27 eV for the (111), evaporated (100) and air-cleaved (100) NaCl substrates respectively. It is shown that these results can be related to the atomistic theory of nucleation by Walton. Moreover, the results indicate that both the binding energy U between a single adatom and a growing oriented cluster and the atomic adsorption energy Q_ad on the substrate surface are proportional to the planar atom densities in the growing cluster and in the substrate surface respectively. It is further shown that while the activation energies for Cu films formed on the two (100) substrate surfaces are about the same, the actual epitaxial temperatures for the same R are significantly different.     

Bias sputtered Ta modified diffusion barrier in Cu/Ta(Vb)/Si(111) structures

In this investigation, we have fabricated Ta(V_b)/Si(111) and Cu/Ta(V_b)/Si(111) systems using a DC bias sputtering technique at high Ar pressure (100 mTorr). For Ta/Si(111) system, tantalum layer was formed under various bias voltages ranging from 0 to −150 V. The films were characterized by Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and four-point probe sheet resistance measurements (R_s). From electrical resistivity and SEM data, a minimum resistivity (99 μΩ cm) and well surface morphology at an optimum bias voltage (V_b=−50 V) was obtained for the Ta(V_b)/Si(111) system. The Ta films deposited under these conditions with 50 nm thickness are then used as a diffusion barrier in the Cu/Ta(V_b)/Si(111) multilayer structure. According to our RBS, SEM and R_s analysis, the Ta barrier layer formed under the controlled bias sputtering at high Ar pressure has demonstrated an improved Ta structure with excellent thermal stability up to 650°C for the Cu/Ta(V_b)/Si(111) system annealed in N₂ environment for 30 min. Formation of TaSi₂ was observed at 700°C after the barrier failure using RBS spectra.