PBII氮离子注入对氮化硼薄膜结构的影响

研究了氮离子注入对立方氮化硼（ｃ－ ＢＮ） 膜,富硼的硼氮膜（ＢＮ０ ．５ ） 和硼膜（Ｂ） 的成分及结构的影响． 用活性反应离子镀技术在单晶硅基体上沉积ｃＢＮ、ＢＮ０ ．５ 和Ｂ 膜;然后使用等离子基离子注入（ＰＢＩＩ） 技术,在５０ ｋＶ 的基体脉冲负偏压下注入氮． 用ＦＴＩＲ 透射谱分析膜在氮离子注入前后结构的变化,用ＸＰＳ分析膜的成分分布． 结果表明：在ｃ－ ＢＮ 膜中注入氮离子几乎不改变膜的ＮＢ,但膜中ｃ－ ＢＮ 的含量略有增加;对于ＢＮ０ ．５ 膜,注入氮后,ＮＢ 略有提高,膜的ａ－ ＢＮ 的结晶化提高;而在硼膜中注入氮后,氮在膜中呈类似高斯分布,最高氮浓度ｒ（Ｎ）达２３ ％ ,膜中形成了非晶态的氮化硼（ａ－ ＢＮ） 结构． 此外,在以上各种膜上注入氮后,膜基界面都有不同程度的成分混合．     

PBⅡ氮离子注入对氮化硼薄膜结构的影响

研究了氮离子注入对立方氮化硼膜,富硼的硼氮膜和硼膜的成分及结构的影响。用活性反应离子镀技术在单晶硅基体上沉积ｃ－ＢＮ,ＢＮ０．５和Ｂ膜,然后使用等离子基离子注入技术,在５０ｋＶ的基本脉冲负偏压下注入氮。用ＦＴＩＲ透射谱分析膜在氮了注入前后结构的变化,用ＸＰＳ分析膜的成分分布。     

合成硼碳氮体系薄膜的XPS研究

采用Ｘ射线光电子谱（ＸＰＳ）分析３００～５００℃等离子体源离子渗氮硼和碳化硼薄膜合成的氮化硼和硼碳氮薄膜。利用合成薄膜成分可控的特点,研究Ｂ、Ｃ、Ｎ对薄膜的ＸＰＳ影响。结果表明,ＸＰＳ分析合成氮化硼薄膜能够确定其化学组成,但不能确定ｓｐ＾２和ｓｐ＾３型键合结构特性;ＸＰＳ分析硼碳氮薄膜能够确定其成分和结构特性。在较高的工艺温度下,等离子体源离子渗氮合成的硼硕氮薄膜具有ｓｐ＾２和ｓｐ＾３型复合的键合     

用PBII方法在硼膜中注入氮形成BN的结构

用电子束蒸发纯硼,在硅片上沉积不同厚度的硼膜,然后用等离子体基离子注入(PBⅡ)技术在硼膜上注入氮以形成氮化硼(BN).用XPS分析膜的成分深度分布及化学价态;用傅里叶变换红外(FTIR)透射谱分析膜的结构.氮在膜中呈类似高斯分布,随着注入电压增大, 膜的N/B比增大且影响氮在膜中的分布,在较高的注入电压时,膜基间产生界面混合.对XPS B1s谱进行Gauss-Lorentz拟合表明:硼在膜中以BN及游离态两种形式存在.FTIR分析结果表明:当注入电压较低,时间较短时,膜中存在非晶态形式的氮化硼(a-BN);增大注入电压及注入时间,向六方形式的氮化硼(h-BN)转化;原始硼膜的厚度小有助于h-BN的形成.     

PAN基ACF的结构表征(Ⅱ)—─氮元素与结合态变化的浅析

借助Ｘ射线光电子能谱、元素分析、激光拉曼光谱等手段,采用氩气与真空下炭化、活化的方法,研究了聚丙烯腈基（ＰＡＮ）炭纤维、活性炭纤维含氮化学组成、结构特征变化及相关影响因素。研究结果表明：１）在活化过程中聚丙烯腈基炭纤维的ＸＰＳ单扫描Ｎ１ｓ结合能及相对含量向高位发展;２）ＰＡＮ基活性炭纤维中ＲＮＨＲ、ＲＣＮＨＲ２Ｏ及吡啶酮等氮杂环含量与纤维吸附性能定性关联;３）ＰＡＮ基炭纤维在活化过程中的元素变化主要以脱氮为主,其次为氧、碳;其中本体脱氮速率大于表面脱氮速率;４）ＰＡＮ基活性炭纤维的序态结构并未因其经历活化过程而有所降低。     

PAN基ACF的结构表征（Ⅱ）：氮元素与结合态变化的浅析

借助Ｘ射线光电子能谱、元素分析、激光拉曼光谱等手段,采用氩气与真空下碳化、活化的方法,研究了聚丙烯腈基（ＰＡＮ）炭纤维、活性炭纤维含氮化学组成、结构特性变化及相关影响因素。研究结果表明：１）在活化过程中聚丙烯腈基炭纤维的ＸＰＳ单扫描Ｎ１ｓ结合能及相对含量向高位Ｏ＝发展;２）ＰＡＮ基活性炭纤维中ＲＮＨＲ、ＲＣＮＨＲ２及比啶酮等氮杂环含量与纤维吸附性能定性关联;（３）ＰＡＮ基炭纤维在活化过程中的元素变     

硼酸铝晶须氮化特性研究

针对硼酸铝晶须增强铝基复合材料的界面反应问题,经热力学预测,首次提出对硼酸铝晶须进行氮化处理这一新工艺。采用Ｘ射线光电子能谱（ＸＰＳ）研究了硼酸铝晶须的氮化特性。实验结果表明：硼酸铝晶须中已渗入氮元素;同时,硼酸铝晶须中硼元素向ＢＮ转变。硼酸铝晶须的氮化反应受扩散控制,为一热激活过程,其反应活化能为３０６．３４ｋＪ／ｍｏｌ。     

C60／花生酸混合LB膜Ⅱ.LB膜的表征和AFM形貌观察

用紫外可见吸收光谱（ＵＶ－ｖｉｓ）、Ｘ光电子能谱（ＸＰＳ）和原子力显微镜（ＡＦＭ）对Ｃ６０／ＡＡ混合ＬＢ膜中Ｃ６０分子在ＬＢ膜中的排列作了观察,进一步证明了我产在第一报中确认在混合ＬＢ膜中Ｃ６０分子不是顶在花生酸疏水部分的端头,而是嵌埋在花生酸分子之间。     

反应离化团束（RICB）法生长CN硬质薄膜

用反应离化团束（ＲＩＣＢ）法，以低分子量聚乙烯为蒸发材料，氨气为反应气体，在ＮａＣｌ（１００）和Ｓｉ（１００）衬底上淀积Ｃ－Ｎ薄膜，透射电子衍射（ＴＥＭ）分析表明薄膜中含有β－Ｃ３Ｎ４晶粒，Ｘ射线光电子谱（ＸＰＳ）和红外吸收谱（ＩＲ）表明存在Ｃ，Ｎ原子的化学键合。     

对向靶溅射制备CN膜研究

使用对向靶系统在Ｓｉ（１００）基片上于不同Ｎ２分压下制备ＣＮ膜样品。Ｘ射线衍射表明样品为非晶结构。用Ｘ射线光电子谱测量膜中Ｎ的含量,结果表明膜中／Ｃ随Ｎ２分压提高而增大,当Ｎ２分压为１００％时,Ｎ／Ｃ达到０．４６。用Ｘ射线光电子谱和红外谱研究了膜中Ｃ与Ｎ的键态,结果表明膜中Ｃ与Ｎ之间存在化学键合。Ｎ与Ｃ的键态主要由Ｎ－ｓｐ＾２Ｃ和Ｎ－ｓｐ＾Ｃ及少量Ｃ＝Ｃ组成。     

PIII技术制备c-BN硬化层

采用一种新型的等离子体浸没式离子注入技术(PIII)在渗硼后的50Mn钢试样上制备出了厚度为0.15~0.2mm的立方氮化硼(c-BN)表面硬化层。经X光电子能谱(XPS)和X光衍射分析(XRD),发现硬化层中的组织有立方氮化硼(c-BN)、六方氮化硼(h-BN)、B2O3、FeB和Fe2B。在表层60nm的深度范围内,c-BN的含量较高。采用球盘式无润滑滑动摩擦试验和维氏显微硬度试验分别对渗硼+PIII复合处理以及单独渗硼的50Mn钢试样的性能进行了对比试验。结果表明,与单独渗硼的试样相比,渗硼+PIII复合处理的试样具有高得多的硬度(高达Hv0.1N44GPa)和耐磨性。该项技术在电缆压模上进行了应用试验,获得了较好的应用效果。     

Synthesis of Boron Nitride Microtubes and Formation of Boron Nitride Nanosheets

Boron nitride microtubes are synthesized in a dual zone quartz tube furnace at 1200°C with ammonia as a reaction atmosphere. Field emission scanning electron microscopy (FE-SEM) results show a unique cone-like morphology of the tubes with larger internal space and thin walls structure. The diameters of the tubes were found to be in the range of 1 to ～2 µm with the walls thickness estimated to be from 10 to 100 nm. XPS survey shows N 1 s and B 1 s peaks at 398.7 and 191 eV, respectively, that represent h-BN in the sample. Raman spectroscopy indicates a high-intensity peak at 1372.53 (cm^?1) that corresponds to the E_2g mode of h-BN. Along with the novel tubular morphology of boron nitride microtubes, the present work also explains a mechanism for the formation of boron nitride nanosheets (from boron nitride microtubes) found in the FE-SEM results of the current sample.     

Microstructural and optical properties of BN films deposited by inductively coupled plasma CVD

Boron nitride films were deposited at different substrate temperatures (400-600 K) on Si (100) substrates by RF plasma CVD technique using a mixture of borane-ammonia, argon and nitrogen as the precursor gases. No intentional bias was applied during deposition to modulate the ion energy. The surface textures of the films were obtained by Atomic Force Microscope studies (AFM). X-ray Photoelectron Spectroscopy (XPS) studies were carried out to determine the bonding environment in the coatings. Fourier Transformed Infra-Red (FTIR) spectrums indicated that the films deposited at lower substrate temperature contained h-BN phases and the percentage of c-BN content in the films increased with the substrate temperature. Films deposited at temperature ∼553 K were predominantly c-BN in nature.     

Structural evolution of boron nitride films grown on diamond buffer-layers

Boron nitride films on diamond buffer layers of varying grain size, surface roughness and crystallinity are deposited by the reaction of B₂H₆ and NH₃ in a mixture of H₂ and Ar via microwave plasma-assisted chemical vapor deposition. Various forms of boron nitride, including amorphous α-BN, hexagonal h-BN, turbostratic t-BN, rhombohedral r-BN, explosion E-BN, wurzitic w-BN and cubic c-BN, are detected in the BN films grown on different diamond buffer layers at varying distances from the interface of diamond and BN layers. The c-BN content in the BN films is inversely proportional to the surface roughness of the diamond buffer layers. Cubic boron nitride can directly grow on smooth nanocrystalline diamond films, while precursor layers consisting of various sp²-bonded BN phases are formed prior to the growth of c-BN film on rough microcrystalline diamond films.     

离子注入硼、氮后纯铁表层的组织结构与性能

本文对纯铁进行了硼、氮离子注入试验，利用透射电镜和ｘ射线衍射仪分析了纯铁注入层的组织结构，而且对纯铁注入层的硬度和耐蚀性进行了测试。结果表明：纯铁注入硼离子后表层形成了弥散的ＦｅＢ相，晶界处形成了较粗大的Ｆｅ２Ｂ相；注入硼离子后再注入氮离子进一步形成了Ｆｅ２Ｎ和Ｆｅ３Ｎ相。硼、氮离子注入明显提高表层的硬度，显著地提高纯铁表层的耐蚀性。     

Preparation of c-BN films by RF sputtering and the relation of BN phase formation to the substrate bias and temperature

This paper deals with the deposition of cubic boron nitride (c-BN) films by radio frequency (RF) magnetron sputtering. The nearly pure c-BN films have been prepared on Si(100) substrates using hexagonal boron nitride (h-BN) targets. Argon gas mixed with nitrogen gas was used as sputtering gas. The deposited films were characterized by Fourier transform infrared (FTIR) spectroscopy and transmission electron diffraction (TED). A ‘temperature-bias' phase diagram has been worked out. It indicates that the c-BN phase prefers the relative high temperature and negative bias. An opinion was presented that the c-BN nuclei grow discontinuously with every time the ‘thermal spike' coming.     

Cubic BN formation by ion implantation

Boron nitride was synthesized by nitrogen ion implantation. Boron films were prepared as implantation targets on single-crystal Si(100) substrates by 13.56-MHz radio frequency sputtering. The diatomic single 30-keV nitrogen ions were chosen for implantation. The implantation dose ranged from 1×10¹⁷ ions/cm² to 2×10¹⁸ ions/cm². The films were characterized using a transmission electron microscope. Several phases of boron nitride were found at the medium implantation dose. At the high dose of 2×10¹⁸ ions/cm², the pure c-BN phase was observed. It is believed that the transition from the low ordered phases to c-BN phase occurred during implantation. The films showed good adhesion to the Si substrate.     

Thermal stability of magnetron sputtering amorphous carbon nitride films

Magnetron sputtered amorphous carbon nitride films were annealed at different temperatures (450-900°C) and time (30-120 min). Compositional, bonding structural and surface morphological modifications of the films were characterized by Fourier transformation infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy. The as-deposited film was found to have nitrogen content of 30 at%, and the carbon atoms were bonded to nitrogen atoms in the chemical structure state of CN, CN and CN bonds. The FTIR and XPS results showed that the films were thermally stable without an obvious change in the films as annealing temperature was lower than 600°C. The relative intensity ratio of CN over CN bonds reached a maximum at annealing temperature of 750°C, and then decreased gradually at annealing temperature up to 900°C. The CN bonds in the films decreased with the increase of annealing temperature and eliminated completely at annealing temperature of 900°C. These results revealed that annealing caused a substantial decrease in the number of weak bonds between carbon and nitride atoms. The CN bonds have higher thermal stability than CN bonds and CN bonds in the films. Simultaneously annealing also led to the formation of a large fraction graphitic-like carbon in the films while nitrogen escaped from the film. Besides, the surface roughness of the films increased with annealing temperature. However, when annealing time was increased from 30 to 120 min at annealing temperature of 750°C, only a slight effect of the annealing time on composition, bonding structure and the surface roughness of the films was observed.     

Characterization of reactively sputtered c-axis orientation (Al, B)N films on diamond

In this research, we demonstrated the viability of oriented AlN layer that incorporated BN to enhance the texturing. Wurtzite (Al, B)N films were deposited on a diamond wafer (diamond film on Si wafer) by a co-sputtering technique. The preferred orientation structure is sensitive to sputtering control factors. The relationship between the microstructures and process conditions were examined with XRD, TEM and AFM analysis. The cross-section TEM images showed that amorphous and randomly aligned structures were produced in the initial sputtering period, but the higher c-axis orientation structure formed as the sputtering time increased. The thickness of the amorphous and randomly aligned layer decreased with increasing sputtering power, nitrogen concentration, substrate temperature and bias voltage. As the thickness of the amorphous and the randomly aligned layer decreased, an (Al,B)N film with higher film quality than AlN was observed.