SiCp/2024Al基复合材料的界面行为

采用真空热压烧结工艺在580℃下制备了35%(体积分数)SiCp/2024铝基复合材料,利用透射电镜(TEM)、能谱(EDS)、高分辨透射电镜(HRTEM)对复合材料中SiC/Al,合金相/Al的界面结构进行了表征,研究了增强体SiC和基体Al以及热处理前后合金相与基体Al的界面类型,取向结合机制。结果表明,SiC/Al界面清晰平滑,无界面反应物和颗粒溶解现象,也无空洞缺陷。SiC/Al界面类型包括非晶层界面和干净界面。干净界面中SiC和Al之间没有固定或优先的取向关系,取向结合机制为紧密的原子匹配形成的半共格界面。热压烧结所得复合材料中的合金相以Al4Cu9为主,与基体Al的界面为不共格界面,热处理后,合金相Al2Cu弥散分布于基体中,与基体Al的界面为错配度较小的半共格界面。     

三级时效7 N01铝合金微观结构与力学性能关系的研究

本文针对一种有实际应用前景、经历了三级时效的7N01铝合金,采用透射电镜观察和力学性能测试,系统研究了该合金力学性能与析出相微观结构的关系。研究结果表明,该种经历了三级时效状态的7N01铝合金,相比直接人工热处理的材料,屈服强度和抗拉强度均可获得显著提高,同时不损失延伸率。透射电镜观察发现,峰值时效状态下合金的主要强化析出相为η′相和GP区。而且自然时效形成的合金元素原子集团中有GP区生成,它们在人工时效阶段可以直接转化为η′相颗粒。经三级时效处理的合金强度在一定范围内与自然时效阶段形成的GP区的多少密切相关。     

7xxx系AlZnMgCu铝合金早中期时效强化析出相的研究

用高分辨透射电镜（HRTEM）和显微维氏硬度计细致地研究分析了7xxx系AlZnMgCu铝合金的单级时效硬化和强化相析出行为,从不同的晶体学方向跟踪观察了硬化析出相形貌和晶体学演变规律。结果表明：在120℃保温时效该合金具有很明显的时效硬化特性,时效4 h硬度即为210 HV,时效20 h达到峰值227 HV;继续时效,存在一个较长时间的时效平台。GPII区在时效最初10 min后即迅速形成,与基体完全共格;η′相由GPII区发展而来,在时效8 h左右形成,也与基体完全共格;合金峰值时效是GPII区与η′相联合起主要强化作用。时效202 h,观察到初期的η相。没有观察到所谓{100}面上的GPI区。     

多级时效对Al-Mg-Si(Cu)合金力学性能和显微结构的影响

本文通过透射电镜观察、差示扫描量热分析(DSC)和硬度测试等方法研究了6061铝合金在多级时效处理过程中力学性能和显微结构演变的规律.其中,T6I6热处理为先进行固溶处理,淬火后进行180℃预时效,然后在65℃中断时效,最后在180℃再次时效,120/T6I6热处理则将预时效温度改为120℃.结果表明,T6I6热处理不会明显提高合金的峰值硬度,合金强度与析出相类型、尺寸和分布有关系.120℃预时效后中断时效时继续形成GP区或β″前驱相,而180℃预时效后中断时效对显微结构的影响较小.120/T6I6的中断时效过程析出的主要是尺寸较小的GP区或β″前驱相,它们在再时效阶段不能成为析出相的形核点.T6I6在中断时效前GP区和β″前驱相基本全部析出.T6I6热处理和120/T6I6热处理均没有使峰值硬度明显增加,而且120/T6I6会拖延峰值时间.     

δ时效处理对激光增材修复Inconel 718合金组织与性能的影响

采用激光增材修复技术和Inconel 718球形粉末对预制凹槽的Inconel 718合金进行逐层修复,然后在800℃下进行不同时间(4,8,16,32 h)的δ时效处理,研究了时效时间对修复层组织和性能的影响。结果表明:随着时效时间延长,修复层中的Laves相和强化相γ″相逐渐消失,而δ相通过切变的方式在γ″相密排面层错的基础上形核并长大。修复区中的δ相在残余Laves相周围呈细针状析出,并随着时效时间的延长而变大;而母材中的δ相优先在晶界处形核长大,最终在晶粒内以平行式生长。虽然时效处理能够有效提高修复区及母材的显微硬度及抗拉强度,但随着时效时间的持续增加,硬度及力学性能均呈现下降的趋势;修复区及母材的显微硬度在时效4 h时分别达到最高值361 HV和465 HV,之后随着时效时间的延长而逐渐下降;不同时效处理后的修复件的拉伸断裂部位均位于修复区,断口整齐,呈典型的脆性断裂。     

Pb对SiCp/Al-1.2Mg-O.6Si-0.1Ti复合材料界面结构的影响

采用搅拌复合方法制备了SiCp/Al-1.2Mg-0.6Si-0.1Ti-1.0Pb复合材料,通过透射电镜研究了复合材料的界面结构.复合材料中增强体SiC与基体合金的界面主要为SiC/Al、SiC/Pb、SiC/Mg2Si,Pb在复合材料中主要以面心立方Pb相形式存在于SiC颗粒的界面上,部分SiC颗粒的界面存在Al4C3.界面Pb相中存在着Ti元素,由于合金元素之间的相互作用使基体合金中的Pb、Ti元素集中存在于SiC的界面上.     

Pb对SiCp／Al-1．2Mg-0．6Si-0．1Ti复合材料界面结构的影响

采用搅拌复合方法制备了SiCp／Al-1．2Mg-0．6Si-0．1Ti-1．0Pb复合材料，通过透射电镜研究了复合材料的界面结构。复合材料中增强体SiC与基体合金的界面主要为SiC／Al、SiC／Pb、SiC／Mg2Si，Pb在复合材料中主要以面心立方Ph相形式存在于SiC颗粒的界面上，部分SiC颗粒的界面存在Al4C3。界面Ph相中存在着Ti元素，由于合金元素之间的相互作用使基体合金中的Ph、Ti元素集中存在于SiC的界面上。     

碳纤维增强铝基复合材料界面的透射电镜研究

纤维增强金属基复合材料的力学性能在很大程度上取决于增强纤维与金属基体之间的界面状况,适中的界面结合可使材料具有较为理想的性能。对复合材料的界面虽已进行了不少研究,但应用透射电镜方法却还只是开始,本文用透射电镜观察了碳—铝复合材料的界面,分析了界面的相组成,并讨论了界面状态对复合材料性能的影响。     

Mg/Si含量比值对Al-Mg-Si合金析出行为的影响

采用显微硬度计、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)及能谱仪,研究了不同Mg/Si含量比的Al-Mg-Si合金在不同时效温度下的时效析出行为.合金为Mg含量相同,Mg/Si摩尔比接近2.0、1.0和0.5的三种A、B和C合金(合金总含量依次增多).结果表明:Mg/Si含量比对析出动力学有很大影响,温度越高Mg/Si摩尔比对时效动力学影响越大.SEM分析表明:Si含量越高的合金,晶界析出相越连续且尺寸越大,并有一定的晶界无析出带.HRTEM分析表明:过时效阶段,β′相的形成跟Mg/Si比和温度有关;两种时效温度下,在A合金中均析出β′相;而B和C合金在180℃时效主要析出β″相,250℃时效时,B合金中易形成TypeB相,C合金可析出TypeA、TypeB和TypeC三种相.     

自然时效和Cu含量对AlMgSi（Cu）合金时效硬化行为的影响

利用硬度测试和透射电子显微镜观察,对Cu含量分别为0.0%、0.15%、0.8%（wt.%）的AlMgSi合金进行了较系统地显微组织结构和时效硬化行为研究。热处理状态为固溶淬火后直接180℃人工时效及固溶淬火后自然时效两周再180℃人工时效。结果表明：添加Cu可以抑制自然时效对180℃人工时效硬度峰值的负面作用;与固溶淬火后先自然时效两周再180℃人工时效峰值样品比较,固溶淬火后直接180℃人工时效峰值样品中针状析出相的数量密度较大;含0.15%Cu的合金峰值时效样品中只观察到β″析出相,而含0.8%Cu的合金峰值时效样品中观察到β″和Q″析出相;与不含Cu和含0.15%Cu的合金比较,含0.8%Cu的合金时效峰值出现时间延迟。这种现象与Q″相的析出有关,因为析出Q″相需要额外的时效时间。     

挤压铸造SiCp/ZL101复合材料中Si相的电镜观察

利用透射电镜观察了挤压铸造ＳｉＣｐ／ＺＬ１０１复合材料中Ｓｉ相的分布形态,分别发现在基体中析出和依附ＳｉＣ颗粒表面生长这两类Ｓｉ的分布形态,还有少量Ｍｇ２Ｓｉ粒子在后者界面附近析出,并结合挤压铸造工艺和相其形成原因。     

SiC颗粒增强ZL105复合材料的时效

用显微硬度测量和透射电镜观察，研究了在ＺＬ１０５铝合金中加入５０ｖｏｌ．％ＳｉＣ颗粒对沉淀和时效硬化的影响。显微硬度测量结果表明，加入增强相使时效动力学过程加快，研究指出，对时效动力学的影响主要自复全材料的界面，界面产生的高密度位错加速时效起重要作用。     

Effects of alloying elements on microstructure and thermal aging properties of Au bonding wire

We studied the effects of alloying elements Cu and Ni on the microstructure and the thermal aging properties of Au bonding wire. The thermal aging properties of samples bonded with an Al pad, and annealed at 200 °C for durations ranging from 0 to 300 h was investigated using mechanical tests. Both of the alloyed specimens showed higher thermal aging properties than the 4 N Au-bonded specimen, as investigated by means of optical microscopy (OM), scanning electron microscopy (SEM), an electron probe micro analyzer (EPMA) and transmission electron microscopy (TEM). The Cu-alloyed Au bonding wire formed, at the Au-Al interface, a discontinuous Cu-rich layer that was considered to have delayed the growth of the Au-Al intermetallic compound (IMC). Meanwhile, at the Au-Al interface, the Ni-alloyed Au bonding wire formed secondary phase particles that were believed to have improved the bonding strength by interrupting micro-crack propagation.     

Observations of IMC Formation for Au Wire Bonds to Al Pads

A materials investigation of Au wire bonds to Al pads revealed the evolution of a multiphase system whose terminal phases depended on the composition of the Au wire. Scanning transmission electron microscopy/energy-dispersive spectroscopy and electron diffraction data are presented for Au/Al wire bonds using both Pd-doped, 99% pure Au wire (2N) and 99.99% pure Au wire (4N) in the as-formed state, upon completion of overmold operations, and after reflow and aging. The reacted interfaces of both the 2N and 4N bonds were found to take on a bilayer intermetallic compound (IMC) microstructure that persisted with aging and phase changes; it is the interface of this bilayer that is believed to be susceptible to mechanical degradation. Pd was found to accumulate in the IMC near the Au/IMC interface for 2N wire bonds and appears to lead to a phase evolution different from that for 4N wire that may be responsible for enhanced reliability of the 2N wire bond with high-temperature aging.     

A study on interfacial reactions between electroless Ni-P under bump metallization and 95.5Sn-4.0Ag-0.5Cu alloy

Even though electroless Ni-P and Sn-Ag-Cu solders are widely used materials in flip-chip bumping technologies, interfacial reactions of the ternary Cu-Ni-Sn system are not well understood. The growth of intermetallic compounds (IMCs) at the under bump metallization (UBM)/solder interface can affect solder-joint reliability, so analysis of IMC phases and understanding their growth kinetics are important. In this study, interfacial reactions between electroless Ni-P UBM and the 95.5Sn-4.0Ag-0.5Cu alloy were investigated, focusing on identification of IMC phases and IMC growth kinetics at various reflowing and aging temperatures and times. The stable ternary IMC initially formed at the interface after reflowing was the (Cu,Ni)₆Sn₅ phase. However, during aging, the (Cu,Ni)₆Sn₅ phase slowly changed into the quaternary IMC composed of Cu, Ni, Sn, and a small amount of Au. The Au atoms in the quaternary IMC originated from immersion Au plated on electroless Ni-P UBM. During further reflowing or aging, the (Ni,Cu)₃Sn₄ IMC started forming because of the limited Cu content in the solder. Morphology, composition, and crystal structure of each IMC were identified using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Small amounts of Cu in the solder affect the types of IMC phases and the amount of the IMC. The activation energies of (Cu,Ni)₆Sn₅ and (Ni,Cu)₃Sn₄ IMCs were used to estimate the growth kinetics of IMCs. The growth of IMCs formed in aging was very slow and temperature-dependent compared to IMCs formed in reflow because of the higher activation energies of IMCs in aging. Comparing activation energies of each IMC, growth mechanism of IMCs at electroless Ni-P/SnAgCu solder interface will be discussed.     

Increased Interface Strength in Carbon Fiber Composites through a ZnO Nanowire Interphase

One of the most important factors in the design of a fiber reinforced composite is the quality of the fiber/matrix interface. Recently carbon nanotubes and silicon carbide whiskers have been used to enhance the interfacial properties of composites; however, the high growth temperature degrade the fiber strength and significantly reduce the composite's in‐plane properties. Here, a novel method for enhancing the fiber/matrix interfacial strength that does not degrade the mechanical properties of the fiber is demonstrated. The composite is fabricated using low‐temperature solution‐based growth of ZnO nanowires on the surface of the reinforcing fiber. Experimental testing shows the growth does not adversely affect fiber strength, interfacial shear strength can be significantly increased by 113%, and the lamina shear strength and modulus can be increased by 37.8% and 38.8%, respectively. This novel interface could also provide embedded functionality through the piezoelectric and semiconductive properties of ZnO.     

Microstructure of eutectic 80Au/20Sn solder joint in laser diode package

Laser diodes (LD) are usually bonded onto heat sinks for the purposes of heat dissipation, mechanical support and electrical interconnect. In this study, energy dispersive X-ray analysis (EDX) and electron backscatter diffraction (EBSD) are employed to investigate the microstructure evolution of 80Au/20Sn solder joint in LD package. During reflow, Pt-Sn and (Au, Ni)Sn IMCs were formed at the respective LD/solder and solder/heatsink interfaces, while δ, β and ζ′ phases of Au/Sn intermetallics were found in the solder joint. The Au-rich β and ζ′ phases in the solder joint limit the growth of interfacial IMCs. Chip shear testing showed that the failure occurred within the LD, with partial brittle fracture at the GaAs substrate and partial interfacial delamination at the GaAs/SiN interface. The strong solder bond can be attributed to the high mechanical strength of 80Au/20Sn solder, which provides improved stability for high temperature applications.     

电子封装用SiC_p／Cu复合材料制备与性能

采用挤压铸造方法制备了体积分数为55％、不同颗粒粒径增强的电子封装用SiCp／Cu复合材料,并分析了颗粒尺寸和热处理状态对材料物理性能和力学性能的影响规律。显微组织观察表明SiC颗粒分布均匀,复合材料组织致密;随着SiC颗粒尺寸的减小,复合材料的平均线膨胀系数和热导率均降低;退火处理可以降低复合材料的热膨胀系数,同时提高材料的热导率。复合材料具有高的弯曲强度和弹性模量,退火处理后材料的弯曲强度降低,但弹性模量变化不大。