等离子喷涂Al2O3+13wt%TiO2陶瓷涂层的 激光重熔处理

本文用Ｘ射线衍射、扫描电镜和显微硬度研究了等离子喷涂Ａｌ２Ｏ３＋１３ｗｔ％ＴｉＯ２陶瓷涂层激光重熔处理后陶瓷熔化层的组织结构及硬度变化特征。激光重熔区亚稳相Ｙ－Ａｌ２Ｏ３转变成为稳定相α－Ａｌ２Ｏ３：ＴｉＯ２与Ａｌ２Ｏ３反应生成ＴｉＡｌ２Ｏ３陶瓷熔化层致密,无孔隙、少裂纹或无裂纹;熔化层硬度有较大提高,且随激光能量密度的增大而增大,而涂层设计对其影响很小。此外,激光重熔能极大地提高陶瓷的涂层的耐磨     

铝合金激光熔覆Ni-WC涂层的组织及耐磨性

采用５ｋＷＣＯ２激光器，对ＺＡ１１１合金表面的Ｎｉ－ＷＣ等离子涂层进行了熔覆处理。利用ＳＥＭ和Ｘ射线衍射分析了激光层中的组织分布，并对激光处理后的试样进行了耐磨性实验。实验结果表明，激光熔层中的组织以镍铝基的金属间化合物Ａｌ３Ｎｉ，Ａｌ３Ｎｉ２，ＡｌＮｉ和Ｎｉ３Ａｌ为主；ＷＣ颗粒基本在熔区中熔化，在冷却过程中以弥散碳化物形式析出。这些组织的存在使得激光熔层具有很高的硬度，其润滑磨损耐磨性为未经激光处理喷涂层的１．７５倍和Ａｌ－Ｓｉ合金基体的２．８３倍。     

Al_2O_3颗粒对Al-Zn合金激光快凝组织的影响

通过比较Ａｌ－Ｚｎ合金和Ａｌ_２Ｏ_（３ｐ）／Ａｌ－Ｚｎ复合材料的激光重熔组织。分析Ａｌ_２Ｏ_３颗粒对Ａｌ－Ｚｎ合金激光快凝组织的影响规律。实验结果表明,Ａｌ_２Ｏ_３颗粒可以显著细化激光熔区的晶粒。基于凝固界面与颗粒交互作用的理论分析,给出了晶粒细化的临界条件。     

激光合成Al_2O_3-WO_3陶瓷材料的显微分析

用Ｘ射线衍射等技术分析了激光合成Ａｌ２Ｏ３－ＷＯ３陶瓷材料，结果表明在激光合成样品中形成柱状晶，而常规工艺和Ｎ２气氛中烧结样品不含有柱状晶，柱状晶的成分主要是Ａｌ２Ｏ３。进一步的分析表明Ａｌ２Ｏ３－ＷＯ３陶瓷合成样品的导电相是ＡｌｘＷＯ３。     

γ-TiAl金属间化合物合金激光表面合金化制备Al_2O_3/TiAl耐磨复合材料涂层研究

以镍包Ａｌ_２Ｏ_３粉末为原料对γ－ＴｉＡｌ金属间化合物合金进行激光表面合金化,制得无裂纹、表面光滑、内部组织致密、厚度可达１．０ｍｍ、以快速凝固Ａｌ_２Ｏ_３硬质相为增强相的“原位”耐磨复合材料合金层,通过预热及缓冷可以消除涂层开裂现象。涂层与基体的结合为完全冶金结合,激光表面合金化后ＴｉＡｌ合金硬度及在滑动磨损及磨料磨损条件下耐磨性均大幅度提高。     

Al_2O_3-WO_3材料的激光合成研究

采用大功率ＣＯ２激光器合成出了Ａｌ２Ｏ３－ＷＯ３陶瓷材料。测量其阻－温特性表明合成样品具有线性的ＮＴＣ热敏电阻特性，微观分析结果证明激光合成样品由Ａｌ２Ｏ３、ＷＯ３、Ａｌ２（ＷＯ４）３、ＡｌｘＷＯ３四相组成，而起导电作用的是ＡｌｘＷＯ３这一非平衡反应产物。常规烧结工艺合成Ａｌ２Ｏ３－ＷＯ３陶瓷材料所得试样没有线性的ＮＴＣ热敏电阻特性。     

纳米粉添加剂对Al2O3陶瓷烧结性能及微结构的影响

用纳米ＺｒＯ３作为烧结助剂加入Ａｌ２Ｏ３陶瓷中,研究其对Ａｌ２Ｏ３陶瓷烧结性能及显微结构的影响。结果表明,纳米ＺｒＯ２的加入可以提高Ａｌ２Ｏ３陶瓷的烧结活性,降低烧结温度,当纳米ＺｒＯ２的加入量达到９ｖｏｌ％时,Ａｌ２Ｏ３陶瓷在１６００℃以下就可烧结致密,此外,纳米ＺｒＯ２的加入,对Ａｌ２Ｏ３陶瓷的显微结构也产生影响。在纳米ＺｒＯ２加入量较少时,ＺｒＯ２粒子以“晶内型”和晶界型两种形式存在;而当ＺｒＯ２加入量达到９ｖｏｌ％时,其主要位于四个Ａｌ２Ｏ３晶粒相交的晶界上,阻碍了Ａｌ２Ｏ３晶粒的异常长大,从而获得细晶结构的Ａｌ２Ｏ３陶瓷材料。     

SiCp/6061Al复合材料激光表面熔化及合金化显微组织与耐蚀性

为提高颗粒增强铝基复合材料耐蚀性，对ＳｉＣｐ／６０６１Ａｌ复合材料进行激光表面熔化和激光表面合金化。结果表明：激光表面熔化后，因熔化层中形成大量耐蚀性低的针状Ａｌ_４Ｃ_３相及Ａｌ_４ＳｉＣ相而使激光表面熔化层耐蚀性降低，以Ｎｉ－Ｃｒ－Ｂ粉末为原料对ＳｉＣｐ／６０６１Ａｌ复合材料进行激光表面合金化后，合金层耐蚀性明显提高。     

γ-TiAl金属间化合物合金激光熔敷高温自润滑耐磨复合材料涂层

以 Ｎｉ８ＯＣｒ２０、Ｃｒ_３Ｃ_２、Ａｒ、ＣａＦ_２／ＢａＦ_２四元混合粉末为原材料,利用激光熔敷技术在ｒ－ＴｉＡｌ金属间化合物合金Ｔｉ－４８Ａｌ－２Ｃｒ－２Ｎｂ表面上制得了以ｒ一ＮｉＣｒ为基体、以初生Ｍ_７Ｃ_３及Ｍ_（２３）Ｃ_６为耐磨相、以弥散分布颗粒Ａｇ、ＣａＦ_２或ＣａＡｇＦ_４为自润滑相的高温自润滑耐磨复合材料涂层,涂层显微硬度大大提高且与基体呈冶金结合。     

新型陶瓷刀具材料JX—2—I组合增韧补强机理的实验研究

本文研究了新型陶瓷刀具材料ＪＸ－２－Ｉ（Ａｌ２Ｏ３／ＳｉＣｐ／ＳｉＣｗ）的力学性能，同Ａ（Ａｌ２Ｏ３），ＡＰ（Ａｌ２Ｏ３／ＳｉＣｐ），ＡＷ（Ａｌ２Ｏ３／ＳｉＣｗ）和ＪＸ－１（Ａｌ２Ｏ３／ＳｉＣｗ）材料相比，ＪＸ－２－Ｉ具有较高的抗弯强度（σｂｂ）和断裂韧性ＫＩＣ，研究结果表明，在ＪＸ－２－Ｉ陶瓷刀具材料中确实存在增韧补强原协同作用，陶瓷刀具材料ＪＸ－２－Ｉ的主要增韧机理是界面解离，裂纹偏转和晶须拔     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.