纳电子器件

随着电子器件的小型化,器件的尺寸已经到了介观尺寸,传统的器件日益接近其物理机理的禁区,一些新的介观器件随之出现.本文根据介观系统的新特点,介绍了几种典型的纳电子器件,并简单地介绍了量子干涉器件、共振隧穿器件、单电荷转移器件,量子点元胞自动机的工作机理和各自所体现的介观效应.     

纳电子器件

随着电子器件的小型化，器件的尺寸已经到了介观尺寸，传统的器件日益接近其物理机理的禁区，一些新的介观器件随之出现。本文根据介观系统的新特点，介绍了几种典型的纳电子器件，并简单地介绍了量子干涉器件、共振隧穿器件、单电荷转移器件，量子点元胞自动机的工作机理和各自所体现的介观效应。     

量子电子器件及其应用

随着半导体芯片的特征尺寸从微米量级向纳米量级挺进,半导体的量子效应现象显现。文章阐述了半导体器件中的量子尺寸效应、隧道效应、干涉效应等量子效应的种类以及利用这些量子效应制作的量子点器件、谐振隧穿器件和单电子器件三大种类量子电子器件。介绍了各类量子电子器件的原理以及它们具有超高速、超高频、高集成度、低功耗和高特征温度等优越特性,并着重介绍了各类量子电子器件的制造方法。在此基础上,指出了量子电子器件的应用及发展前景。     

量子器件与量子信息技术

从信息社会的发展分析提出了量子器件及量子信息技术产生和发展的必然性,介绍了谐振隧穿器件、单电子器件、电子波导晶体管等纳米电子器件及其特点,对量子激光器和量子信息技术及其性能作了简要介绍,并给出了应用前景.     

纳米器件的发展动态

介绍了纳米CMOS器件、纳米电子器件和量子器件的发展动态,提出以信息载体来分类纳米器件的方式。在纳米CMOS器件方面,主要介绍近半年来65nm工艺及器件的最新动态;在纳米电子器件方面,主要介绍共振隧穿器件(RTD)的动态;在量子器件方面,主要介绍量子器件和半导体自旋器件的概况。     

介观电感耦合电路的量子涨落

随着纳米技术和纳米电子学的飞速发展，在电子器件中，电路及器件小型化越来越强烈，近年来已达到原子尺度．当电子的输运尺度达到电子两次非弹性碰撞之间的尺度时，必须考虑器件和电路的量子效应．1973年，Louisell首先讨论了LC电路的量子效应并给出了在真空态下这一电路的量子噪声．最近，我们分别研究了在压缩真空态下介观LC电路和RLC电路中电荷、电流的量子涨落；由于真空态可视为其压缩参数为零的压缩真空态，因此研究介观电路在压缩真空态下电荷、电流的量子涨落将会更具有普遍性．本文首先讨论了由两个LC电路通过电感耦合而组成…     

名词木语释义——量子器件

<正> 量子器件是利用量子效应来构筑电子器件的器件总称。因为只有纳米微小结构下才能出现显著的量子效应,所以量子电子器件属于纳器件。当常规器件的特征尺寸达到与半导体中的电子平均波长(约几纳米)相当时,由于量子隧道效应,使MOSFET作为开关的功能失效,从而使其不能再成为信息处理芯片的基本单元,而量子器件则不受此限制。当前提出的各种     

有限温度下介观LC电路中的量子涨落

在有限温度下,介观电路系统实际上并不处在一个确定的量子状态,而是处在混合态.利用量子正则系综理论研究了介观LC电路在混合态下电荷和电流的量子涨落.结果表明,有限温度下介观LC电路中的量子涨落不仅与电路器件参数有关,而且与温度也有关.温度越高,电路中的量子涨落越大.该方法较热场动力学(TFD)方法更易于理解和应用.由于实际的介观电路总是处在有限温度下,所以其结论对控制介观电路中的量子涨落有一定的实际意义.     

半导体量子电子和光电子器件分析

文章主要阐述了半导体异质结构电子的量子特性,对半导体量子电子和光电子器件进行科学的分析,其中,对电子波输运状况、库仑阻塞效应等作出了一定分析基础上,介绍了几种较为新颖的、具有代表性的量子电子器件和量子光电子器件的物理模型,并对半导体量子电子和光电子器件运行的基本原理作出了科学的理解。     

名词解释

<正> 介观电子学(Mesoscopic Electronics) 由于半导体微细加工技术的进步,已经能够在低温下观测尺寸量子效应了。在半导体微结构中,如果其尺寸允许电子的弹性散射,但不允许非弹性散射,则在保持电子波相位的状态下发生电子波干涉现象,利用这一现象的新原理电子学即为介观电子学,所谓介观是指介于宏观与微观之间的意思。目前主要是在HEMT结构上,利用聚焦离子束和电子束描绘等方法形成量子点接触,量子线和量子点等结构,用其研究介观现象的。研究热点是阐明量子线中支配电子相位保持时间的机构,目前虽     

Superconducting resonators and charge qubits: Spectroscopy and quantum operations. Part I

For the past few years, considerable progress has been made in the fabrication of quantum devices using mesoscopic semiconductor elements. These devices can represent the elemental base for a wide class of high-tech devices from supersensitive detectors of an electromagnetic field to reliable sources of single photons and quantum computers. The article reviews the main experimental results obtained to date with the participation of superconducting quantum devices.     

Atomic‐Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy

Scanning tunneling microscope (STM) has presented a revolutionary methodology to nanoscience and nanotechnology. It enables imaging of the topography of surfaces, mapping the distribution of electronic density of states, and manipulating individual atoms and molecules, all at atomic resolutions. In particular, atom manipulation capability has evolved from fabricating individual nanostructures toward the scalable production of the atomic‐sized devices bottom‐up. The combination of precision synthesis and in situ characterization has enabled direct visualization of many quantum phenomena and fast proof‐of‐principle testing of quantum device functions with immediate feedback to guide improved synthesis. Several representative examples are reviewed to demonstrate the recent development of atomic‐scale manipulation, focusing on progress that addresses quantum properties by design in several technologically relevant materials systems. Integration of several atomically precisely controlled probes in a multiprobe STM system vastly extends the capability of in situ characterization to a new dimension where the charge and spin transport behaviors can be examined from mesoscopic to atomic length scale. The automation of atomic‐scale manipulation and the integration with well‐established lithographic processes further push this bottom‐up approach to a new level that combines reproducible fabrication, extraordinary programmability, and the ability to produce large‐scale arrays of quantum structures.     

Application of quantum-based devices: trends and challenges

Revolutionary nanofabrication techniques and trends have opened the way to fabricating quantum wells, quantum wires and quantum dots that may provide the basic building blocks for future nanoelectronic and mesoscopic (quantum) device technologies. Furthermore, these trends lead to new opportunities for realizing quantum-based information processing devices but many challenges must be addressed and intensive international basic research is essential for the full exploitation of these revolutionary devices     

Need for critical assessment

Adventurous technological proposals are subject to inadequate critical assessment. It is the proponents who organize meetings and special issues. Optical logic, mesoscopic switching devices and quantum parallelism are used to illustrate this problem     

半导体量子点的电子结构

半导体量子点是一种具有显著量子尺寸效应的介观体系。文中从固体能带理论出发，对箱形量子点、球形鼻子点、巨型鼻子点以及磁场中量子点的电子结构进行了讨论。     

Quantum memory based on ensemble states of NV centers in diamond

In this study, the main results of experimental and theoretical investigations that substantiate the possibility of the development of quantum computational systems with a separate structure are considered and analyzed. These systems involve the operational part and the memory, as well as the communication quantum network, which performs the data exchange between them. We are starting to get knowledge about such hybrid quantum devices from studying the solid-state systems, in which the macroscopic number (ensemble) of NV centers in diamond is used as the memory element, while superconducting mesoscopic structures play the role of the operational element and quantum network.     

A broad theoretical approach to the investigation of mesoscopic electron devices

Nanofabrication technology has matured to a point where it is possible to realize mesoscopic semi-conductor structures with dimensions comparable to the phase coherence length of conducting electrons. Devices based on electron wave phenomena, like quantum interference, must be studied using quantum mechanical methods which are very computationally intensive. We have initially applied a tight-binding Green's function formalism to structures modelled as ideal electron wave-guides, looking at issues related to the realization of three-terminal quantum interference devices and to the more general problem of device interconnection. We also report on a highly efficient two-dimensional algorithm implementation for the self-consistent solution of the coupled Poisson and Schrödinger equations, necessary to investigate subband wavefunctions and energy levels in the cross-section of realistic electron waveguide structures, which we plan to incorporate in the approach.     

量子化介观RLC并联电路在热真空态下的量子效应

根据热场动力学理论,研究了具有普遍意义的量子化介观RLC并联电路在热真空态下产生的量子效应,并分析在各支路中电流和电压的量子涨落与电路元件、环境热真空态以及时间三个方面因素的关系。结果表明,处于热真空态下的量子化介观RLC并联电路,各支路电流和电压的量子涨落均受到这三个方面因素的影响, 并且具有如下规律, 电流和电压的涨落均随时间按指数规律衰减,但衰减速度仅与电路元件的参数有关,而初始时刻涨落的大小由电路元件参数和环境热真空态的温度共同决定。     

Quantum limited detection in tunnel junction mixers

A complete quantum generalization of microwave mixer theory is constructed for nonlinear single-particle tunnel junctions. The result represents a unification of the concepts used to describe these "classical" resistive mixers with the language of photon detection. Tunneling devices are predicted to undergo a transition from energy detectors to photon counters when operated at frequencies where the photon energy becomes comparable to the voltage scale of the dc nonlinearity. The small-signal video current response is found to approach one electron for each photon absorbed at high frequencies. In a heterodyne receiver, sufficiently nonlinear tunnel junctions are predicted to be capable of achieving the fundamental quantum noise limit for sensitivity in the detection of electromagnetic radiation. The theory presented here thus provides a framework for systematically extending the techniques of quantum electronics to considerably lower frequencies than are currently being exploited. Recent measurements of heterodyne mixer performance using superconductive tunneling devices are already beginning to approach quantum limited results at microwave and millimeter wave frequencies. Eventual application of tunnel barriers as photon detectors in the submillimeter and infrared spectral regions also appears to be possible, and the fast response times of such devices could give them an advantage over photoconductors even at the higher frequencies. The development of suitable nonlinear tunnel junctions contains the potential to bridge the present gap in quantum detectors between the infrared photon devices and microwave masers.