A 16-element two-dimensional active self-steering array using self-oscillating mixers

A 16-element two-dimensional (2-D) retrodirective array using self-oscillating mixers (SOMs) is presented. SOMs allow for easier implementation of larger 2-D arrays by eliminating the complex local-oscillator (LO) feed structure. A 4 /spl times/ 4 element retrodirective array using SOMs is demonstrated at an LO frequency of 7.68 GHz. Each element is phased locked at the LO frequency with an accompanying RF frequency isolation of 17.9 dB between adjacent horizontal elements and 22.2 dB between adjacent vertical elements. A -10-dBm external injection-locking signal is applied to reduce the phase noise of the 16-element array to -68.2 dBc/Hz at 10-kHz offset. Retrodirectivity is observed in the /spl phi/=0/spl deg/, /spl phi/=-45/spl deg/, and /spl phi/=-90 plane for scattering angles of /spl theta/=-15/spl deg/, /spl theta/=0/spl deg/, and /spl theta/=+30/spl deg/.     

Wide-band photonically phased array antenna using vector sum phase shifting approach

In this paper, a wide-band photonically phased array antenna is demonstrated. The array configuration consists of a 4 /spl times/ 1 Vivaldi single-polarization antenna array and an independent photonic phasing system for each element. The phasing network of this array is implemented using two novel photonic phase shifters based on the vector summation approach. A vector sum phase shifter (VSPS), which exhibits a frequency-linear characteristic from dc to 15 GHz and can be continuously tuned from 0 to 100/spl deg/, is presented. A second-order VSPS (SO-VSPS), a modification of the VSPS that is capable of 0-430/spl deg/ phasing range, is also demonstrated. This paper presents the operation and characterization of each component of the array, including the radiating elements and the various photonic phase shifters and, finally, a demonstration of the combined system. A discussion on the practicality of this system for airborne applications is presented, along with suggestions for simplification and improvement.     

A cavity-backed rectangular aperture antenna with application to a tilted fan beam array antenna

A rectangular aperture of A/sub x//spl times/A/sub y/, cut in the top conducting plate of a triplate transmission line and backed by a cavity, radiates a tilted beam off the direction normal to the aperture. The mechanism of the radiation is explained using the Poynting vector distribution above the aperture and the phase distribution of the electric field over the aperture. The tilt angle is calculated as a function of side length A/sub x/ for a representative value of A/sub y/=18 mm=0.747/spl lambda//sub 12.45/, where /spl lambda//sub 12.45/ is the wavelength at a test frequency of 12.45 GHz. A tilted beam of approximately 27/spl deg/ is realized at A/sub x//A/sub y/=8/9 with a gain of approximately 8 dB. Using this value of A/sub x//A/sub y/, an array antenna composed of rectangular cavity-backed aperture elements is investigated. The array forms a tilted fan beam without phase shifters. The frequency responses of the gain and input impedance are discussed.     

Piezoelectric transducer controlled multiple beam phased array using microstrip Rotman lens

A simple and low-cost multiple beam phased array is designed using a microstrip Rotman lens and multi-line phase shifter controlled by a piezoelectric transducer (PET) at Ka-band. A microstrip Rotman lens with five beam ports and nine array ports is used as a feed for a multiple beam antenna array to generate five beams centered at the angles of 0/spl deg/, /spl plusmn/15/spl deg/, and /spl plusmn/30/spl deg/. The lens fed nine-element patch array shows the antenna gain of 10 dBi and sidelobe suppression of 10 dB. Each beam is steered over /spl plusmn/8/spl deg/ using two PET-controlled phase shifters, and the five beams cover /spl plusmn/38/spl deg/ from the broadside.     

Room-temperature self-organised In/sub 0.5/Ga/sub 0.5/As quantum dot laser on silicon

The first room-temperature operation of In/sub 0.5/Ga/sub 0.5/As quantum dot lasers grown directly on Si substrates with a thin (/spl les/2 /spl mu/m) GaAs buffer layer is reported. The devices are characterised by J/sub th//spl sim/1500 A/cm/sup 2/, output power >50 mW, and large T/sub 0/ (244 K) and constant output slope efficiency (/spl ges/0.3 W/A) in the temperature range 5-95/spl deg/C.     

Broadband 180/spl deg/ bit phase shifter using a /spl lambda//2 coupled line and parallel /spl lambda//8 stubs

In this paper, a broadband 180/spl deg/ bit phase shifter using a new switched-network was presented. The new network is composed of a /spl lambda//2 coupled line and parallel /spl lambda//8 open and short stubs, which are shunted at the edge points of a coupled line, respectively. According to a desired phase shift, it provides a controllable phase dispersive characteristic by the proper determination of Z/sub m/,Z/sub s/, and R values. The 180/spl deg/ bit phase shifter operated at 3 GHz was fabricated and experimented using design graphs which provide the required Z/sub m/,Z/sub s/ values, and I/O match and phase bandwidths. The experimental performances showed broadband characteristics.     

A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM

A 1.2-V 72-Mb double data rate 3 (DDR3) SRAM achieves a data rate of 1.5 Gb/s using dynamic self-resetting circuits. Single-ended main data lines halve the data line precharging power dissipation and the number of data lines. Clocks phase shifted by 0/spl deg/, 90/spl deg/, and 270/spl deg/ are generated through the proposed clock adjustment circuits. The latter circuits make input data sampled with an optimized setup/hold window. On-chip input termination with a linearity error of /spl plusmn/4.1% is developed to improve signal integrity at higher data rates. A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM is fabricated in a 0.10-/spl mu/m CMOS process with five metals. The cell size and the chip size are 0.845 /spl mu/m/sup 2/ and 151.1 mm/sup 2/, respectively.     

Photonic RF phase shifter and tunable photonic RF notch filter

A new photonic RF phase shifter structure for phased array antennas is presented. It is based on a single dual-output modulator and two optical switches and optical attenuators. This can realize continuous phase shifting of 0/spl deg/-360/spl deg/ without altering the signal amplitude. It has the advantages of wide bandwidth, fast response time, and fine tuning resolution. Experimental results demonstrate phase shifts over a 360/spl deg/ phase range, with RF signal power changes of less than 0.2 dB, which is in close agreement with predictions. A tunable photonic RF notch filter, which is based on the new phase shifter, is also presented. Experimental results demonstrate continuous tuning of the photonic notch filter over a wide tuning range, which covers the full free spectral range, which is in good agreement with predictions.     

Subharmonically pumped CMOS frequency conversion (up and down) circuits for 2-GHz WCDMA direct-conversion transceiver

Subharmonically pumped frequency down- and upconversion circuits are implemented in 0.18-/spl mu/m mixed-mode CMOS technology for 2-GHz direct-conversion WCDMA transceiver applications. These circuits operate in quadrature double-balanced mode and a required octet-phases (0/spl deg/, 45/spl deg/, 90/spl deg/, 135/spl deg/, 180/spl deg/, 225/spl deg/, 270/spl deg/, and 315/spl deg/) local oscillator (LO) signal comes from an active multiphases LO generator composed of a polyphase filter and active 45/spl deg/ phase shifting circuits. For linearity improvement, predistortion compensation and negative feedback schemes are used in the frequency down- and upconversion circuits, respectively. The downconverter achieves a conversion voltage gain of 20 dB (to 1-M/spl Omega/ load), 4-dBm IIP3 (18-dBm OIP3 to 50-/spl Omega/ load), 41-dBm IIP2 and 8.5-dB DSB NF at 1-MHz IF frequency, consuming 13.4 mA from 1.8-V supply, in the WCDMA Rx band (2110-2170 MHz). The upconverter, operating as two switched gain modes in the WCDMA Tx band (1920-1980 MHz), consumes 19.4 mA from 1.8-V supply and shows 14.5-dB conversion power gain, 15 -dBm OIP3 (0.5-dBm IIP3) and -11 dBm P/sub 1dB/ at maximum gain mode. At minimum gain mode, it realizes -0.3-dB conversion loss, 10.7-dBm OIP3 (11-dBm IIP3) and 0-dBm P/sub 1dB/, respectively. 3GPP WCDMA modulation tests are performed for both up- and downconversion circuits and the results are discussed in this paper.     

Arbitrary dual-band components using composite right/left-handed transmission lines

Arbitrary dual-band microstrip components using composite right/left-handed (CRLH) transmission lines (TLs) are presented. Theory, synthesis procedure, and implementation of the dual-band quarter-wave (/spl lambda//4) CRLH TL are presented. Arbitrary dual-band operation is achieved by the frequency offset and the phase slope of the CRLH TL. The frequency ratio of the two operating frequencies can be a noninteger. The dual-band /spl lambda//4 open/short-circuit stub, dual-band branch-line coupler (BLC), and dual-band rat-race coupler (RRC) are also demonstrated. The performances of these dual-band components are demonstrated by both simulated and measured results. Insertion loss is larger than 23 dB for the shunt /spl lambda//4 CRLH TL open-circuit stub and less than 0.25 dB for the shunt /spl lambda//4 CRLH TL short-circuit stub at each passband. The dual-band BLC exhibits S/sub 21/ and S/sub 31/ larger than -4.034 dB, return losses larger than 17 dB, isolations larger than 13 dB, phase differences 90/spl deg//spl plusmn/1.5/spl deg/, and gain imbalance less than 0.5 dB at each passband. The dual-band RRC exhibits S/sub 21/ and S/sub 31/ larger than -4.126 dB, return losses larger than 12 dB, isolations larger than 30 dB, phase difference 180/spl deg//spl plusmn/4/spl deg/, and gain imbalance less than 0.2 dB at each passband.     

A new active RF phase shifter using variable gain, drain Voltage controlled PHEMTs:A 2.4-GHz ISM implementation

Phase shifters operating at RF bands are an essential component of phased and adaptive arrays circuits. In this letter, an active phase shifter is proposed, using vector summing of an in-phase and a quad-phase replica of the incoming signal. The proposed scheme was designed and implemented using a Wilkinson power combiner/divider, a branch line hybrid coupler and single-stage variable gain amplifiers (VGAs), achieving continuous phase shift within the range of [0/spl deg/, 90/spl deg/]. The manufactured prototype is suitable for WLAN operations in the 2.4-GHz ISM band. Details of the phase shifter design and experimental results are presented.     

CMOS RF circuits for data communications applications

The author describes the recent development of two analog CMOS circuits operating at RF frequencies with applications to data communications. One is a four-quadrant analog multiplier which exhibits a 100-MHz bandwidth with a measured linearity error of 0.7% for X and Y inputs of 0.6 and 0.8 V, respectively. The other is a 90/spl deg/ phase shifter which maintains the grain and phase errors of less than 0.5 dB and 3/spl deg/, respectively, for a signal within 40-60-MHz frequency range.     

1 W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification

A 1 W record singlemode fibre coupled output power using 1460 nm InGaAsP/InP non-tapered buried ridge lasers has been demonstrated. The impact of the bandgap of the passive quaternary waveguide on internal loss was investigated. Optimised design allows internal losses as low as 3.3 cm/sup -1/, external efficiency of 0.46 W/A for a 3 mm-long laser and symmetrical (12/spl deg//spl times/12/spl deg/) far-field pattern.     

Photodiode-integrated microstrip antenna array for subterahertz radiation

The radiation characteristics of subterahertz (sub-THz) electromagnetic waves emitted from an antenna array integrated with photodiodes are investigated. The element of the fabricated array antenna was a 300-GHz microstrip antenna integrating a uni-traveling carrier photodiode. It was observed that the beamwidth of a 3 /spl times/ 1 antenna array is about half that of the single microstrip antenna. We also confirmed that the radiation direction changed by 20/spl deg/ when 2/spl pi//5 of phase difference was added to the input optical signal for each antenna element. These results demonstrated that sub-THz waves emitted by each element of the array were coherently superimposed and the power combining of the sub-THz radiation occurred in the microstrip antenna array. The measured output power of each radiation element is about 120 /spl mu/W, and a total output power of 1 mW can be estimated for a fabricated 3 /spl times/ 3 array in an ideal radiation condition.     

A photonic-link millimeter-wave mixer using cascaded optical modulators and harmonic carrier generation

Efficient frequency conversion into and out of the millimeter wave frequency band has been demonstrated using photonic link signal mixing with cascaded optical modulators. By adjusting the modulator bias point and RF drive power to the modulator introducing the local oscillator signal at f/sub LO/=8.8 GHz, frequency conversions from f/sub s/ to f/sub LO//spl plusmn/f/sub s/, sf/sub LO//spl plusmn/f/sub s/, and 4f/sub LO//spl plusmn/f/sub s/ with respective losses of 4.8, 6.3, and 7.5 dB have been demonstrated. The direct phase noise measurement of the optical RF signal at 2f/sub LO/=17.6 GHz with 1 kHz offset shows -89 dBc/Hz, limited by the RF drive source.     

A fully integrated 24-GHz phased-array transmitter in CMOS

This paper presents the first fully integrated 24-GHz phased-array transmitter designed using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS power amplifiers, with outputs matched to 50 /spl Omega/, that are each capable of generating up to 14.5 dBm of output power at 24 GHz. The heterodyne transmitter has a two-step quadrature up-conversion architecture with local oscillator (LO) frequencies of 4.8 and 19.2 GHz, which are generated by an on-chip frequency synthesizer. Four-bit LO path phase shifting is implemented in each element at 19.2 GHz, and the transmitter achieves a peak-to- ratio of 23 dB with raw beam-steering resolution of 7/spl deg/ for radiation normal to the array. The transmitter can support data rates of 500 Mb/s on each channel (with BPSK modulation) and occupies 6.8 mm /spl times/ 2.1 mm of die area.     

A 2500 gate bipolar macrocell array with 250 ps gate delay

An oxide-isolated walled-emitter structure has been developed to obtain high performance and high packing density. Using this process, a macrocell array having 2500 equivalent gates has been fabricated. A gate delay of 250 ps with a 1 mA current switch has been achieved. Special circuitry and macros have been incorporated on the LSI to enhance diagnostic capability at both the chip and the system levels. A pin array package with /spl theta//SUB JA//spl les/4/spl deg/C/W has been developed for the LSI chip.     

Mode Propagation in a Nonuniform Cylindrical Medium (Correspondence)

A simplified form of the coupling coefficient C(/spl beta//sub p/, /spl beta//sub q/) resulting from a coupled mode theory analysis of wave propagation in a nonuniform medium is derived. It is found for most situations of interest that C(/spl beta//sub p/, /spl beta//sub q/) is proportional to 1/(/spl beta//sub p/-/spl beta//sub q/) and the power transfer between two modes is proportional to 1/(/spl beta//sub p/ - /spl beta//sub q/)/sup 4/. /spl beta//sub p/ and /spl beta//sub q/ are the two different modal propagation constants. For a dielectric rod C(/spl beta//sub p/, /spl beta//sub q/) is a simple line integral around the rod boundary. Approximate forms are presented for optical waveguides.