作弊防控系统中独立可调双频带通滤波器设计

文章提出了一种独立可调双频带通滤波器.该滤波器主要由一对加载变容二极管的并联耦合短路线、一对加载变容二极管的λ/2开路谐振器和公共输入输出部分组成.变容二极管和并联耦合短路线并联构成一个谐振器,产生第一通带.λ/2开路谐振器加载变容二极管,产生第二通带.通过改变加载在变容二极管上的偏置电压来改变变容二极管的电容值,使谐振器的谐振频率发生偏移,从而调节滤波器工作频率.结果表明,第一通带和第二通带的中心频率变化范围分别为0.2~0.4GHz和1.2~1.42GHz,调节百分比分别为66.5%和15.4%.仿真与测试的结果吻合良好,证明该设计方法是有效的.该滤波器可应用到作弊防控系统中.     

基于GaAs变容二极管的电调滤波器芯片设计

介绍基于GaAs变容二极管工艺的电调滤波器芯片的研究与设计,包括变容材料制备、二极管模型建立以及电路设计。设计数款电调滤波器,工作频段范围覆盖1~19 GHz。测试结果显示,电调滤波器具有超过一个倍频程的调谐范围,器件击穿电压大于+30 V。本文选取中心频率为2~5 GHz可调的一款电调滤波器进行详细介绍,控制电压范围为0~15 V,插入损耗在10 dB左右,输入和输出驻波(电压驻波比)均优于1.8。设计的系列化电调滤波器具有一致性高、小型化、低成本和免调试等优势,拥有良好的应用前景。     

基于枝节加载型SIR的可调滤波器

基于枝节加载型阶梯阻抗谐振器(SIR)设计了一种加载变容二极管的微带可调带通滤波器。SIR结构利于抑制高次谐波且可实现滤波器的小型化,提出的模型通过在SIR的中心平面加载2个枝节构成多模谐振器。通过奇偶模方法分析了枝节加载型SIR的谐振特性;通过加载变容二极管实现了对滤波器奇偶模谐振频率的独立控制,利用变容二极管容值的变化实现了滤波器的中心频率可调,中心频率随变容二极管偏置电压的增加而增大。该可调滤波器实现了在0.82~1.17 GHz范围内中心频率可调且插入损耗小于5 dB,回波损耗大于10 dB。     

一种双频电调带通滤波器的设计

提出一种新型中心频率可调谐的双频带通滤波器,该滤波器利用双端短路的阶梯阻抗谐振器(stepped-impedance resonator,SIR)结构,在其中两个不同特性阻抗传输线之间同时加载变容二极管,其输入输出结构采用50Ω的缝隙耦合馈电。采用半波长SIR的折叠型结构,实现了滤波器的小型化。并通过奇偶模的分析方法,调节变容二极管上加载的电压实现中心频率分别在1.97~2.20 GHz和4.15~4.30 GHz之间可调。比较仿真与测量结果证明了该方法有效。     

基于双模谐振器的双通带可调谐滤波器设计

从理论上分析了开路支节加载双频谐振器的谐振模式,通过在谐振器末端加载变容二极管的方式,设计了一款双通带独立可调谐滤波器。通过调节谐振器末端变容二极管电容值大小来改变通带的中心频率,通过调节支节末端的变容二极管来调节通带的带宽。该滤波器的两个通带之间相互独立,调谐其中一个通带对另一个通带几乎没有影响。通过引入源与负载的耦合,使得双通带两侧各产生一个传输零点,提高了滤波器的选择性和带外抑制能力。最终设计出的滤波器第一通带的中心频率在1.08~1.19 GHz之间连续可调,绝对带宽在112~152 MHz之间连续可调;第二通带中心频率在2.07~2.22 GHz 之间连续可调,其绝对带宽在132~189 MHz 之间连续可调。在调谐过程中,通过调节中心开路支节末端变容二极管加载直流电压大小,实现调谐过程两通带带宽基本维持不变。     

变容二极管背靠背拓扑结构的性能分析

针对变容二极管在实际应用电路中,由于非线性所造成的寄生调制、频率抖动、频率失真、AM to PM噪声引入等问题,文中采用变容二极管背靠背拓扑结构(BBS),通过改善压控线性度来降低电路RF调制、频率抖动、相位噪声等影响,既能抑制非线性导致的寄生调制现象,又简化了调节电压。为目前广泛应用变容管作为电调元件的电路提供了参考。     

频率可调带通-带阻可切换滤波器的设计

该文设计了一种频率可调带通与带阻可切换微带滤波器,在距λ/2(λ为波长)谐振器开路端约1/4处加载变容二极管实现中心频率可调,利用PIN二极管实现带通与带阻两种状态的可切换。通过对耦合系数与外部品质因数(Q)值的分析,选取合适的参数可实现滤波器绝对带宽在调谐范围内保持恒定。带通状态时,由于源与负载间的耦合及谐振器间的混合电磁耦合,在滤波器的通带两侧各产生1个传输零点,提高了滤波器的选择性与阻带抑制。选用介电常数2.2的F4BM介质基板制作实物并用矢量网络分析仪进行测量。测量结果表明,当PIN管加正偏压,变容二极管加反偏压时,实现了中心频率可调的带阻滤波器;当PIN管不加偏压,变容二极管加反偏压时,实现了中心频率可调的带通滤波器。滤波器的中心频率调谐范围为3.45～3.90 GHz,调谐范围内绝对带宽保持恒定。该滤波器尺寸为44.4 mm×16.1 mm(0.59λ_g×0.21λ_g)(λ_g为调谐范围中心频率对应波长),符合小型化要求。     

225MHz-400MHz压控调谐滤波器的实现

在跳频收发系统中，在射频前端加入调谐滤波器可以提高系统的抗阻塞干扰能力。文章详细介绍了一种225MHz-400MHz压控调谐滤波器的实现方法，该方法主要是通过电压改变变容二极管的电容，从而改变带通滤波器的中心频率，从而实现压控滤波。因此通过分段线性电压来控制带通中心频点就可以对跳频信号进行跟踪滤波。     

基于枝节线加载谐振器的可调滤波器设计

传统基于变容二极管的双频电可调滤波器由于外部容值的加入,该类滤波器的插损变大,同时相对带宽锐减。基于多模谐振器结构,提出了一种新型的工作频段独立、电可调的双频带通滤波器。该滤波器由短路枝节线加载谐振器和一对1/4 波长谐振器组成。在各自的谐振器末端加载带有变容二极管的外部偏置电路,1/4 波长谐振器构成第一通带,短路枝节线加载谐振器构成第二通带,两通带之间互不干扰,单独调节。应用奇偶模分析法及调节耦合间距的方法,确保双通带均出现两个极点,保证其带宽的稳定性。该电可调滤波器第一通带可调范围为0.7 ~0.85 GHz,第二通带可调范围为0.9 ~1.05 GHz,同时双频带的相对带宽基本保持在10% 以上,较以往的双频电可调滤波器,该款滤波器的相对带宽有了较为明显的提升。     

电调谐滤波器的研究与设计

介绍了可调谐滤波器的电路结构,解释了设计中采用电感耦合并联谐振电路的具体原因。给出了变容二极管的等效电路,并对由变容二极管构成的滤波器的最大频率可调范围进行了分析。设计制作了一个VHF频段的电调谐滤波器,并使用安捷伦公司的微波电路仿真软件ADS进行仿真,测试表明,此滤波器的频率可调范围为100～260 MHz,插入损耗小于3.8 dB,驻波系数小于1.65。同时在频率的可调范围内对滤波器的插入损耗和矩形系数的变化进行了分析,实验结果和理论分析吻合较好。     

Accurate Determination of Varactor Resistance at UHF and Its Relation to Parametric Amplifier Noise Temperature

A thorough investigation is made on the frequency-dependent properties of a varactor diode loss resistance at UHF. The variation of the losses with frequency in a varactor diode mounted cavity has been theoretically investigated, and it is shown that the previously reported inverse-squared frequency dependence of the varactor loss resistance can be attributed to the distributed cavity losses transformed across the varactor diode. A new measurement technique is introduced in which the circuit losses are first matched to the input line instead of the varactor loss resistance as an application of the relative impedance method. Measurements carried out with this technique for five different varactor diodes showed that the loss resistances of these diodes are not frequency dependent. It is also shown that the choice of the varactor diode capacitance plays an important role on the parametric amplifier noise temperature at UHF. In an experimental parametric amplifier the effect of varactor diode capacitance on the noise temperature has been demonstrated. It has been theoretically and experimentally shown that, generally, varactor diodes having higher capacitances result in better noise temperature at UHF.     

Novel varactor-tuned millimetre-wave Gunn oscillator

A novel design of varactor-tuned millimetre-wave second-harmonic Gunn oscillator is reported in which a varactor is mounted in a secondary cavity resonant at the fundamental frequency of the Gunn diode. This has the advantage that the varactor does not significantly load the Gunn diode at the output second-harmonic frequency, and enables the oscillator to produce the maximum possible output power from the diode while still offering varactor tuning and high Q.     

New type of varactor diode having strongly nonlinear C/V characteristics

Experimental studies of a new type of varactor diode consisting of a semiconductor multilayer structure have been performed. It is shown that such a varactor diode has much stronger nonlinearity in capacitance variation with applied bias voltage than does the conventional varactor, which will enable efficient generation of millimetre waves by direct frequency multiplication of high order.     

基于平面肖特基二极管的太赫兹频段倍频器的研究

基于研究肖特基变容二极管的半导体层结构分析与建模,通过研究太赫兹平面肖特基势全二极管半导体材料的 物理层结构,分析二极管结构的电磁效应及其频率响应特性。研究D 频段变容二极管高效率倍频器技术,在太赫兹频段 倍频器的性能对整个接收机的性能有着至关重要的影响。要实现高频率,高功率,宽频带,高效率,低噪声太赫兹倍频 技术是太赫兹技术领域的核心研究方向之一。研究基肖特基二极管倍频器的关键技术,分析了国内外现状及发展动态。     

Millimeter wave monolithic high electron mobility (HEM) varactor diode-grid frequency tripler arrays

High Electron Mobility (HEM) varactor structures have been studied for millimeter-wave monolithic diode-grid frequency tripler array applications. The improved HEM varactor diode structures provide a highly nonlinear C-V characteristic (i.e., a steep slope of the C-V curve and a large capacitance ratio) which produces high harmonic generation efficiency and reduce the power requirement for efficiently pumping each device. The effects of the light illumination on the C-V characteristics of the Barrier-Intrinsic-N⁺ (BIN) varactor diode have also been studied and the results will be discussed in this paper. In the development of a monolithic diode-grid frequency multiplier array, the low-loss quasioptical configuration is used for the construction of the multiplier circuit. The study of the effects of the light illumination on the C-V characteristics of varactor diode is important in understanding the potential applications of the quasi-optical varactor diode-grid frequency multiplier array circuit.     

变容二极管调谐体效应振荡器的CAD

本文建立了一种新的 Gunn VCO 的电路模型,计算了 Gunn 管和变容二极管之间的径向盘耦合电容。首次利用谐波平衡法对 Gunn VCO 进行了非线性分析,设计并制作了一 Ka 波段混合集成 Gunn VCO,实验结果与 CAD 结果进行了比较,证明了该种电路模型与分析方法的有效性。此外利用该分析程序研究了Gunn 管和变容二极管之间的耦合与调谐带宽的关系。在分析的基础上,利用线性拟合误差函数作为 Gunn VCO 频率调谐线性度的优化目标函数,对 VCO 的频率调谐特性进行了优化,确定了此种电路在最佳线性调谐时 PN 结幂指数γ的值,从而在理论上对满足线性调谐的变容二极管提出了要求。     

W-band monolithic frequency doubler using vertical GaAs varactor diode with n/sup +/ buried layer

A W-band monolithic frequency doubler was designed and fabricated using a vertical GaAs varactor diode that has an n/sup +/ buried layer and uses a mesa isolation process. An output power of 30 mW was obtained from this chip at 93 GHz with a conversation efficiency of 12%. This is believed to be the first reported W-band monolithic varactor diode frequency doubler.<>     

集成化平面肖特基变容管微波C-V特性物理模型

提出一种集成化平面肖特基变容管微波频段 C- V特性物理模型 ,该模型考虑了由平面结构引起的分布有源层串联电阻、分布结电容、结反向饱和漏电流及侧壁电容对微波频段 C- V特性的影响 ,揭示了集成化平面肖特基变容管 C- V特性对频率的依赖 ,并对变容比作了讨论。模型与实验结果符合得很好     

Varactor Controlled Gunn Oscillator at W-Band

This paper describes the experimental circuit and measured performance of varactor tuned Gunn oscillator at W-band. The power output of 12.5 dBm has been achieved when packaged GaAs Gunn diode is used. Linear frequency excursion of 150 MHz with power variation of 1 dB has been observed when varactor was given reverse bias from 0 to 20 volts. GaAs hyperabrupt varactor is used in parallel to gunn diode at a distance of odd multiple of λg/2 in waveguide channel.     

Varactor-tuned integrated Gunn oscillators

Electronic tuning of Gunn diodes in hybrid integrated circuits has been studied. Microstrip transmission lines were used to form resonant circuits into which a Gunn diode and a varactor diode were mounted to provide the microwave power and frequency tuning, respectively. Basically, two types of circuits have been investigated. The first is a half-wavelength open-circuited microstrip `cavity' with this transmission line and the varactor diode attached between the end of the cavity and an RF ground. The second is a lumped LC circuit in which the inductance of a short high-impedance microstrip line is resonated with the lumped capacitance of the varactor diode. The latter circuit provides a tuning range of over 10 percent at 7.5 GHz. The power output varies within 2 dB in the tuning range.