小型化宽频带PIFA 天线的设计与仿真

针对现代通信系统终端小型化、宽频带的要求,本文提出了一种新型小型化宽频带平面倒F 天线。该天线由 金属地板、辐射贴片、短路贴片和馈电系统四部分组成。其中对地板进行十字缝隙开槽,短路贴片采用短路墙,馈电 系统采用二等分威尔金森功分器。采用HFSS13.0 软件对天线进行仿真,仿真结果表明,该天线在2.01~2.61GHz 频带 范围内驻波比小于2, 阻抗带宽达到26.3%;1.66~2.75GHz 频带范围内增益大于3dBi,增益带宽达到47.4%。同时,天 线的自由空间辐射方向图也满足无线通信终端要求。     

低RCS宽带磁电偶极子贴片天线设计

该文设计了一种低雷达散射截面(RCS)的宽带磁电偶极子贴片天线,其中印刷在介质板上的金属贴片为电偶极子,3个金属过孔连接辐射贴片与金属地板构成磁偶极子。整个天线采用T型渐变馈电结构同时激励电偶极子与磁偶极子,天线的频带范围为7.81~13.65 GHz,覆盖了整个X波段。实测和仿真结果表明,通过在磁电偶极子贴片天线底面采用开槽技术并优化开槽的形状、大小、位置等变量,在天线工作频带范围内实现了RCS的减缩,最大缩减量达到了17.9 dB,同时天线保持了增益稳定不变,E面、H面方向图一致的特性。     

无表面波损耗的孔耦合贴片天线的设计

设计了一种新结构的孔耦合贴片天线。该天线结构将贴片连用制作贴片的介质基板一起放置在一个矩形金属框里，彻底阻断了表面波的传输，该天线结构的尺寸比一般贴片天线要小很多。但却具有更高的增益，还介绍了对该天线结构的数值模拟。样品制作和实验测量，测量数据显示矩形金属框使天线的增益在9GHz到11GHz的频率范围内平均提高了0.7dB，该天线的工作频带超过了20%，带内平均增益为8.3dBi，同时天线具有良好的辐射方向图。     

小型化超宽带蝶形印刷对数周期天线

设计了一款用于微波医学成像系统的小型化超宽带蝶形印刷对数周期天线。 在馈电线开端加载电感短柱改善了天线的阻抗匹配,在传统印刷对数周期天线上加载蝶形结构和 U 型贴片结构拓展了天线带宽并实现了小型化。 天线尺寸为 0. 300 λ×0. 280 λ×0. 007 λ( f = 1. 12 GHz) ,天线 S11 <-10 dB 的实测工作频带为 1. 12 GHz ~ 4 GHz,最大实测增益达到6 dBi。 天线的实测方向图在工作频带内实现了定向辐射,辐射效果好,该天线可以应用于微波脑检测系统等医学领域。     

L波段小型化宽带盘锥天线的设计

提出了一种小型化L波段宽带全向盘锥天线,采用不对称椎体结构,使得天线方向图在较宽的工作带宽内实现俯仰面全向覆盖,并可达到波束的上倾.仿真结果表明,天线在0.9～1.8 GHz频带内反射系数小于-15 dB,在仰角0°时增益大于1 dBi,方位面不圆度优于0.5 dB.     

一种Fabry—Perot谐振器天线

设计了一种Fabry—Perot谐振器天线,相对于微带贴片天线而言具有较宽的频带和较高的增益。仿真结果表明．该天线的实用频带的相对带宽达到了7.7％,增益最大值达到了17．83dBi,能对电磁波起到较好的聚焦作用,并且在一定程度上改善了旁瓣和后瓣。     

一种结构简单且陷波特性易调节的超宽带天线

设计了一种具有陷波特性的超宽带(UWB)天线,由一个圆环形贴片和部分地板组成,通过在贴片上 刻蚀一个弧形槽可以在不改变天线尺寸的基础上实现阻带特性。利用HFSS 仿真软件对该天线进行了仿真设计,设 计结果表明天线能够在2. 8-10. 8GHz 频带内实现宽带特性,并在5. 1-6GHz 处形成阻带。在此基础上,加工和测量 了天线模型,实测结果表明天线在工作频带内具有良好的辐射方向图和稳定的增益,而且天线尺寸小、结构简单。 非常适合应用于超宽带系统。     

应用于WLAN和WiMAX的双频带印刷天线设计

提出了一种新型的用于WLAN/WiMAX通信系统的双频带印刷单极天线。通过改进的叉子形的辐射贴片,使天线在2.4 GHz频带内谐振。同时,在介质基板背面的引入寄生辐射贴片,利用与正面的辐射贴片的耦合效应,使天线谐振在5 GHz频带内。最终使得天线可以覆盖2.4/5.2/5.8 GHz WLAN 和5.5 GHz WiMAX频带。对加工后的天线模型测试表明,天线在工作频带内具有较好的全向辐射特性和可观的增益。因此,该天线在无线多频带通信系统中具有广泛的应用前景。     

一种环绕光子晶体的微带贴片天线分析

采用有限元法模拟了一种环绕光子晶体的微带贴片天线,求解出与理论结果有极好吻合的谐振频率,并进一步求解辐射方向图,并与常规微带贴片天线相比较证实了这种贴片天线能够抑制表面波,提高辐射增益。     

一种用于微波输能的宽带矩形微带贴片天线设计

文章设计了一款用于微波输能的宽带高增益矩形微带贴片天线,天线的中心频率为2.55GHZ,通过挖槽与增加空气层增加了天线的增益与带宽,介质板选用FR4作为介质材料,接地部分选用铜,介质板的上层固定有辐射贴片,介质板与接地部分之间设有空气层。本设计采用同轴馈电。仿真表明,反射系数相对带宽26.3%中心频率的增益为6.54。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.