A strategy for fabricating textured silicon nitride with enhanced thermal conductivity

C-axis textured Si₃N₄ with a high thermal conductivity of 176 W m⁻¹ K⁻¹ along the grain alignment direction was fabricated by slip casting raw α-Si₃N₄ powder seeded with near-equiaxed β-Si₃N₄ particles and Y₂O₃–MgSiN₂ as sintering additives in a rotating strong magnetic field of 12 T, followed by gas pressure sintering at 1900 °C for 12 h at a nitrogen pressure of 1 MPa. The green material reached a relative density of 57%, with slip casting and the sintered material exhibited a relative density of 99% and a Lotgering orientation factor of 0.98. The morphology of the β-Si₃N₄ seeds had little effect on the texture development and thermal anisotropy of textured Si₃N₄. The technique developed provides highly conductive Si₃N₄ with conductivity to the thickness direction, which is a major advantage in practical use. The technique is also simple, inexpensive and effective for producing textured Si₃N₄ with high thermal conductivity of over 170 W m⁻¹ K⁻¹.     

Spark plasma sintering of silicon nitride/barium aluminum silicate composite

Si₃N₄ based composites were successfully sintered by spark plasma sintering using low cost BaCO₃, SiO₂ and Al₂O₃ as additives. Powder mixtures were sintered at 1600–1800 °C for 5 and 10 min. Displacement-temperature-time (DTT) diagrams were used to evaluate the sintering behavior. Shrinkage curve revealed that densification was performed between 1100 and 1700 °C. The specimen sintered at 1700 °C showed the maximum relative density (99.8±0.1%), flexural strength (352±16 MPa), Vickers harness (11±0.1 GPa) and toughness (5.6±0.05 MPa m^1/2).     

Effects of microstructure and intergranular glassy phases on thermal conductivity of silicon nitride

In this study, the binary sintering additives Y₂O₃-Sc₂O₃, were first applied to the Si₃N₄ system to investigate their effects on microstructure and thermal conductivity. The microstructure and thermal conductivity of both sintered silicon nitride (SSN) and sintered reaction-bonded silicon nitride (SRBSN) were found to be significantly dependent on the additive composition. Among various combinations of Y₂O₃ and Sc₂O₃, 1 mol% Y₂O₃−3 mol% Sc₂O₃ prominently enhanced thermal conductivity, and the enhancement could not be attributed to any difference in microstructure or lattice defects. TEM observation revealed that this composition was more liable to devitrify the glassy phase with a lower degree of stress accumulation, and to possibly produce a grain boundary that was cleaner or with a higher order of atomic arrangement. A microstructure model for thermal conductivity was proposed which took the thermal resistance of the grain boundaries into account. The grain boundary state exerted a remarkable influence on the thermal conductivity of fine microstructures, and the experimentally measured thermal conductivity values were consistent with those given by the proposed model.     

Enhanced nitridation of silicon compacts by Yb2O3 addition

The catalytic effect of ytterbium oxide (Yb₂O₃) on the nitriding reaction of Si compacts was investigated. Si powder mixtures containing Yb₂O₃ were prepared and nitrided in the form of compacts with a multi-step heating schedule over the range of 1200 °C–1450 °C. The nitriding profiles of the powder mixture with increasing temperature indicated that Yb₂O₃ clearly promoted the nitridation of Si compacts at 1200 °C compared with the pure Si compact containing no additives. The critical role of Yb₂O₃ on the nitridation of Si, was elucidated that Yb₂O₃ promotes the loss of initial SiO₂ of the raw Si powder via the measurement of the weight changes at low temperature (1100 °C) and thermogravimetric analysis under N₂ atmosphere. It was also found that the β-ratio of fully nitrided Si was closely related to the intermediate degree of nitridation at 1200 °C and 1300 °C.     

Effects of MgO addition on the microwave dielectric properties of high thermal-conductive silicon nitride ceramics sintered with ytterbia as sintering additives

1 mol% of MgO was added together with 7 mol% of Yb₂O₃ as sintering additives to silicon nitride powder to fabricate advanced silicon nitride ceramics with both high thermal conductivity and low dielectric loss at 2 GHz. The mixed powder was CIPed at a pressure of 120 MPa and was gas-pressure sintered at 1900 °C to >98% of theoretical density. The sintered Si₃N₄ sample exhibited a high thermal conductivity of ～100 W m^?1 K^?1 and a loss tangent (tan δ) of ～4 × 10^?4, concurrently. The tan δ was further reduced by half after the heat treatment at 1300 °C for 24 h. The improvement in tan δ due to the annealing was explained from the point of crystallization of the intergranular glassy phase.     

Structural,thermal and mechanical properties of aluminum nitride ceramics with CeO2 as a sintering aid

AlN ceramics have been prepared with CeO₂ as a sintering aid at a sintering temperature of 1900 °C. The effect of CeO₂ contents on the microstructure, density, thermal conductivity and hardness was investigated. Addition of CeO₂ exerted a significant effect on the densification of AlN ceramics and hence on the microstructure. Thermal conductivity of AlN ceramics increased with CeO₂ content and was greater than that of Y₂O₃-doped AlN ceramics at a similar sintering temperature. The resulting AlN ceramics with 1.50 wt% of CeO₂ had the highest relative density of 99.94%, thermal conductivity of 156 W m⁻¹ K⁻¹ and hardness of 72.46 kg/mm².     

The role of MgSiN2 during the sintering process of silicon nitride ceramic

The reaction process between MgSiN₂ SiO₂ and Si₃N₄ was investigated by analyzing the composition change of the powder mixture of 61 wt% MgSiN₂, 34 wt% SiO₂ and 5 wt% α-Si₃N₄ after heat treatment at different temperatures. The phase and chemical compositions of the grain boundary phase in the silicon nitride ceramic was analyzed by x-ray diffraction, transmission electron microscope, and energy-dispersive x-ray spectroscopy. The results demonstrated that MgSiN₂ reacted with the surface silica and Si₃N₄ to form Mg–Si–O–N liquid phase, which promoted the consolidation densification of silicon nitride powders through liquid-phase sintering mechanism. The amount of Mg–Si–O–N glass boundary phase using MgSiN₂ as additives is much less than that using the same amount of MgO additive, owing to the lower oxygen concentration and higher nitrogen content.     

Influence of sintering aids and excess Lithium on the conductivity of perovskite-type Li3/8Sr7/16Zr1/4Nb3/4O3 solid electrolyte

Perovskite-structured Li_3/8Sr_7/16Zr_1/4Nb_3/4O₃ solid-state Lithium-conductors were prepared by conventional solid-state reaction method. Influence of sintering aids (Al₂O₃, B₂O₃) and excess Lithium on structure and electrical properties of Li_3/8Sr_7/16Zr_1/4Nb_3/4O₃ (LSNZ) has been investigated. Their crystal structure and microstructure were characterized by X-ray diffraction analysis and scanning electron microscope, respectively. The conductivity and electronic conductivity were evaluated by AC-impedance spectra and potentiostatic polarization experiment. All sintered compounds are cubic perovskite structure. Optimal amount of excess Li₂CO₃ was chosen as 20 wt% because of the total conductivity of LSNZ-20% was as high as 1.6×10⁻⁵ S cm⁻¹ at 30 °C and 1.1×10⁻⁴ S cm⁻¹ at 100 °C, respectively. Electronic conductivity of LSNZ-20% is 2.93×10⁻⁸ S cm⁻¹, nearly 3 orders of magnitude lower than ionic conductivity. The density of solid electrolytes appears to be increased by the addition of sintering aids. The addition of B₂O₃ leads to a considerable increase of the total conductivity and the enhancement of conductivity is attributed to the decrease of grain-boundary resistance. Among these compounds, LSNZ-1 wt%B₂O₃ has lower activation energy of 0.34 eV and the highest conductivity of 1.98×10⁻⁵ S cm⁻¹ at 30 °C.     

The influence of MgO,Y2O3 and ZrO2 additions on densification and grain growth of submicrometre alumina sintered by SPS and HIP

Spark plasma sintering followed by hot isostatic pressing was applied for preparation of polycrystalline alumina with submicron grain size. The effect of additives known to influence both densification and grain growth of alumina, such as MgO, ZrO₂ and Y₂O₃ on microstructure development was studied. In the reference undoped alumina the SPS resulted in some microstructure refinement in comparison to conventionally sintered materials. Relative density >99% was achieved at temperatures >1200 °C, but high temperatures led to rapid grain growth. Addition of 500 ppm of MgO, ZrO₂ and Y₂O₃ led, under the same sintering conditions, to microstructure refinement, but inhibited densification. Doped materials with mean grain size <400 nm were prepared, but the relative density did not exceed 97.9%. Subsequent hot isostatic pressing (HIP) at 1200 and 1250 °C led to quick attainment of full density followed by rapid grain growth. The temperature of 1250 °C was required for complete densification of Y₂O₃ and ZrO₂-doped polycrystalline alumina by HIP (relative density >99.8%), and resulted in fully dense opaque materials with mean grain size<500 nm.     

High-strength AlN ceramics by low-temperature sintering with CaZrO3–Y2O3 co-additives

Aluminum nitride (AlN) ceramics with the concurrent addition of CaZrO₃ and Y₂O₃ were sintered at 1450-1700 °C. The degree of densification, microstructure, flexural strength, and thermal conductivity of the resulting ceramics were evaluated with respect to their composition and sintering temperature. Specimens prepared using both additives could be sintered to almost full density at relatively low temperature (3 h at 1550 °C under nitrogen at ambient pressure); grain growth was suppressed by grain-boundary pinning, and high flexural strength over 630 MPa could be obtained. With two-step sintering process, the morphology of second phase was changed from interconnected structure to isolated structure; this two-step process limited grain growth and increased thermal conductivity. The highest thermal conductivity (156 Wm⁻¹ K⁻¹) was achieved by two-step sintering, and the ceramic showed moderate flexural strength (560 MPa).     

A comparative study on the effect of different additives on the formation and densification of magnesium aluminate spinel

Commercially available fused magnesia and sintered alumina sources were used to form reaction sintered spinel by solid oxide reaction route in a single firing. The effect of the addition of four different additives, namely MgCl₂, LiF, AlCl_3, and MnO₂, at 2 wt% level was studied. Mixed oxide compositions were compacted under a uniaxial pressure of 150 MPa and then sintered between 1200 and 1600 °C. The dilatometric study and phase analysis was done to observe the spinel formation reaction. Densification study of the sintered product was done to understand the effect of additives. Cold Crushing strength and thermal shock resistance of 1600° sintered pellets were studied. Microstructural study using field emission scattered electron microscopy (FESEM) was also done to understand the grain development on sintering in the compositions and the effect of different additives on sintering. LiF and MgCl₂ were found to strongly enhance the spinel formation reaction. Bulk density values were found to be lower for the additive containing batches at 1200 °C due to enhanced spinel formation but higher at 1600 °C due to greater sintering. Strength values were strongly enhanced by LiF and MnO₂ due to the development of dense, compact microstructure. Also, additives containing compositions showed much higher strength retainment even after 6 cycles of thermal shock.     

Spark plasma sintering of Sm2O3-doped aluminum nitride

The high sintering temperature required for aluminum nitride (AlN) at typically 1800 °C, is an impediment to its development as an engineering material. Spark plasma sintering (SPS) of AlN is carried out with samarium oxide (Sm₂O₃) as sintering additive at a sintering temperature as low as 1500–1600 °C. The effect of sintering temperature and SPS cycle on the microstructure and performance of AlN is studied. There appears to be a direct correlation between SPS temperature and number of repeated SPS sintering cycle per sample with the density of the final sintered sample. The addition of Sm₂O₃ as a sintering aid (1 and 3 wt.%) improves the properties and density of AlN noticeably. Thermal conductivity of AlN samples improves with increase in number of SPS cycle (maximum of 2) and sintering temperature (up to 1600 °C). Thermal conductivity is found to be greatly improved with the presence of Sm₂O₃ as sintering additive, with a thermal conductivity value about 118 W m⁻¹ K⁻¹) for the 3 wt.% Sm₂O₃-doped AlN sample SPS at 1500 °C for 3 min. Dielectric constant of the sintered AlN samples is dependent on the relative density of the samples. The number of repeated SPS cycle and sintering aid do not, however, cause significant elevation of the dielectric constant of the final sintered samples. Microstructures of the AlN samples show that, densification of AlN sample is effectively enhanced through increase in the operating SPS temperature and the employment of multiple SPS cycles. Addition of Sm₂O₃ greatly improves the densification of AlN sample while maintaining a fine grain structure. The Sm₂O₃ dopant modifies the microstructures to decidedly faceted AlN grains, resulting in the flattening of AlN–AlN grain contacts.     

Spark plasma sintering of ultra-porous γ-Al2O3

Nanocrystalline gamma alumina (γ-Al₂O₃) powder with a crystallite size of ~10 nm was synthesized by oxidation of high purity aluminium plate in a humid atmosphere followed by annealing in air. Spark plasma sintering (SPS) at different sintering parameters (temperature, dwell time, heating rate, pressure) were studied for this highly porous γ-Al₂O₃ in correlation with the evolution in microstructure and density of the ceramics. SPS sintering cycles using different heating rates were carried out at 1050–1550 °C with dwell times of 3 min and 20 min under uniaxial pressure of 80 MPa. Alumina sintered at 1550 °C for 20 min reached 99% of the theoretical density and average grain size of 8.5 µm. Significant grain growth was observed in ceramics sintered at temperatures above 1250 °C.     

High Li-ion conductivity of Al-doped Li7La3Zr2O12 synthesized by solid-state reaction

Li₇La₃Zr₂O₁₂ (LLZO) has cubic garnet type structure and is a promising solid electrolyte for next-generation Li-ion batteries. In this work, Al-doped LLZO was prepared via conventional solid-state reaction. The effects of sintering temperature and Al doping content on the structure and Li-ion conductivity of LLZO were investigated. The phase composition of the products was confirmed to be cubic LLZO via XRD. The morphology and chemical composition of calcined powders were investigated with SEM, EDS, and TEM. The Li-ion conductivity was measured by AC impedance. The results indicated the optimum sintering temperature range is 800–950 °C, the appropriate molar ratio of LiOH·H₂O, La(OH)₃, ZrO₂ and Al₂O₃ is 7.7:3:2:(0.2–0.4), and the Li-ion conductivity of LLZO sintered at 900 °C with 0.3 mol of Al-doped was 2.11×10⁻⁴ S cm⁻¹ at 25 °C.     

Improved thermal conductivity of sintered reaction-bonded silicon nitride using a BN/graphite powder bed

Sintered reaction-bonded silicon nitride (SRBSN) with improved thermal conductivity was achieved after the green compact of submicron Si powder containing 4.22 wt% impurity oxygen and Y₂O₃-MgO additives was nitrided at 1400 °C for 6 h and then post-sintered at 1900 °C for 12 h using a BN/graphite powder bed. During nitridation, the BN/10 wt% C powder bed altered the chemistry of secondary phase by promoting the removal of SiO₂, which led to the formation of larger, purer and more elongated Si₃N₄ grains in RBSN sample. Moreover, it also enhanced the elimination of SiO₂ and residual Y₂Si₃O₃N₄ secondary phase during post-sintering, and thus induced larger elongated grains, decreased lattice oxygen content and increased Si₃N₄-Si₃N₄ contiguity in final SRBSN product. These characteristics enabled SRBSN to obtain significant increase (∼40.7%) in thermal conductivity from 86 to 121 W ∙ m⁻¹ ∙ K⁻¹ without obvious decrease in electrical resistivity after the use of BN/graphite instead of BN as powder bed.     

The sintering behavior,microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets

The properties of sputtering targets have recently been found to affect the performances of sputtered films and the sputtering process. To develop high-quality GZO ceramic targets, the influences of Ga₂O₃ content and sintering temperature on the sintering behavior, microstructure, and electrical properties of GZO ceramic targets were studied.The results showed that the increase in Ga₂O₃ content from 3 wt% (GZO-3Ga) and 5 wt% (GZO-5Ga) not only inhibited the densification but retarded grain growth. During sintering, ZnGa₂O₄ phase formed before 800 °C, and Zn₉Ga₂O₁₂ phase was found after sintering at 1000 °C. Moreover, after sintering at 1200 °C, the number of Zn₉Ga₂O₁₂ precipitates increased at the expense of ZnGa₂O₄ and ZnGa₂O₄ disappearing completely. The relative density, grain size, and resistivity of GZO-3Ga sintered at 1400 °C in air were 99.3%, 3.3 μm, and 2.8 × 10⁻³ Ω cm, respectively. These properties of GZO ceramics are comparable to properties reported in the literature for AZO sintered in air.     

Sintering,microstructural development,and electrical properties of gadolinia-doped ceria electrolyte with bismuth oxide as a sintering aid

A considerable reduction (≥250 °C) in the sintering temperature, enhancement of the sintering density, and a slight improvement of the electrical properties, can be achieved by using bismuth oxide in the range of 0.2 to 2 wt.%, as a sintering aid for gadolinia-doped ceria (GDC) ceramic electrolytes. Dilatometric experiment (CHR) and SEM observations indicate that a liquid phase-assisting sintering mechanism contributes to the improvement in sintering density for bismuth oxide concentrations exceeding 0.5 wt.%. The addition of small amount of Bi₂O₃ ≤0.5 wt.% also results in the achievement of highly dense ceramic bodies (≥99% of theoretical density) after sintering at 1200 °C for 4 h, which indicates that the addition of Bi₂O₃ to gadolinia-doped ceria promoted the sintering process by a cooperating volume diffusion-liquid phase-assisting mechanism. Based on the lattice constant data, the solid solubility limit of Bi₂O₃ in gadolinia-ceria is, probably, lower than 1.0 wt.%. Grain size also increased with increasing Bi₂O₃ content up to 0.5 wt.% and then it decreased with further addition of Bi₂O₃. The addition of the smaller amounts of bismuth oxide, i.e., ≤1.0 wt.% Bi₂O₃ slightly enhanced the total ionic electrical conductivity of the gadolinia-doped ceria electrolyte. The sintering temperature strongly influenced the electrical conductivity of the doped-GDC ceramics. The best sample was that containing 1.0 wt.% Bi₂O₃ sintered at 1400 °C for 2 h which had an ionic electrical conductivity of 4 S m⁻¹ at 700 °C, and an activation energy of 0.58 eV for the oxide-ion conduction process in air.     

Processing of micro-components made of sintered reaction-bonded silicon nitride (SRBSN). Part 2: Sintering behaviour and micro-mechanical properties

This second part of the report deals with, how the sintering additives Y₂O₃, Al₂O₃, and MgO influence the sintering behaviour of SRBSN. Paraffin-based feedstocks with varying sintering aid compositions and silicon grain size were used for moulding macro- and micro-scale samples. It was observed that compositions with smaller Si grain size (with correspondingly high SiO₂ content) and containing Al₂O₃ as sintering additive exhibit higher shrinkage and lower residual porosity when sintered at 1700–1800 °C after nitridation. The mechanical properties determined for micro-scale samples were obtained by three-point bending tests, with the resulting characteristic strength values σ₀ ranging from 500 MPa up to 1200 MPa. Surprisingly residual porosity did not play the role of a strength limiting factor; rather it was observed that the presence of crystalline secondary phases – mainly Y₂Si₃O₃N₄ – was responsible for reducing the micro-bending strength. As micro-samples exhibit a large surface-to-volume ratio they are in particular affected by decomposition of Si₃N₄ and volatilization of SiO₂ which is considered to be responsible for the occurrence of secondary phases preferred at the sample surface. The powder bed condition was also found to play a prominent role in the development of the secondary phases during liquid phase sintering.     

Effect of MgO/La2O3 additives on sintering behavior and microwave dielectric properties of (Sr,Ca)TiO3-(Sm,Nd)AlO3 ceramics

The effect of MgO/La₂O₃ additives on phase composition, microstructures, sintering behavior, and microwave dielectric properties of 0.7(Sr_0.01Ca_0.99)TiO₃−0.3(Sm_0.75Nd_0.25)AlO₃ (7SCT-3SNA) ceramics prepared via conventional solid-state route were systematically investigated. MgO/La₂O₃ as additives showed no obvious influence on the phase composition of the 7SCT-3SNA ceramics and all the samples exhibited pure perovskite structures. The presence of MgO/La₂O₃ additives effectively reduced the sintering temperature of 7SCT-3SNA ceramics due to the formation of a liquid phase at a relatively low temperature during sintering progress. The 0.5 wt% MgO doped 7SCT-3SNA sample with 0.5 wt% of La₂O₃, sintered at 1320 °C for 4 h, was measured to show superior microwave dielectric properties, with an ε_r of 45.57, a Q×f value of 46205 GHz (at 5.5 GHz), and τ_f value of −0.32 ppm/°C, which showed dense and uniform microstructure as well as well-developed grain growth.     

Low temperature pressureless sintering of dense silicon nitride using BaO-Al2O3-SiO2 glass as sintering aid

Dense Si₃N₄ ceramic with BaO-Al₂O₃-SiO₂ low temperature glass powders as sintering aids were prepared by pressureless sintering techniques at a relatively low temperature (1550 °C). Four kinds of glass powders of compositions melting at 1120 °C, 1300 °C, 1400 °C and 1500 °C, respectively, have been introduced as sintering aids. XRD results demonstrate that the BaO-Al₂O₃-SiO₂ glass powders reacted with BaAl₂O₄ and converted into hexagonal celsian, which is a high-temperature phase with melting point of 1760 °C, so being beneficial to the high temperature properties of the materials. In addition, a portion of α-Si₃N₄ transformed to rod like β-Si₃N₄ with high aspect ratio as shown by XRD and SEM analysis. The bulk density increased with the rise of the melting temperature of the BaO-Al₂O₃-SiO₂ glass powders, the sample obtained with the BaO-Al₂O₃-SiO₂ glass powder melting at 1500 °C reaching a maximum density of 98.8%, an high flexural strength (373 MPa) and a fracture toughness (4.8 MPa m^1/2).