室温下富氧空位In2O3微管的制备及其Cl2气敏性能研究

Cl₂作为消毒剂重要的工业原料,在当前疫情肆虐的情况下其需求量日益增大,而Cl₂是一种有毒气体,常见的金属氧化物半导体气敏材料对低浓度Cl₂响应低,因此开发对微量泄露灵敏的Cl₂传感材料具有重要意义。采用一种简便的NaBH₄还原方法,对脱脂棉模板法合成的In₂O₃微管材料进行处理,在室温条件下成功制备了具有丰富氧空位浓度的In₂O₃微管材料。利用XRD、SEM、XPS和EPR表征手段,考察了该方法对其晶体结构、微观形貌和氧空位的影响,结果表明,该方法只提高In₂O₃材料中的氧空位浓度而不对晶体结构和微观形貌产生影响。由气敏性能测试结果可知,NaBH₄处理后的In₂O₃微管比未处理的In₂O₃微管对相同低浓度Cl₂的响应...     

缺陷对β-Ga2O3薄膜的结构和光学特性的影响

采用射频磁控溅射技术和后期退火在蓝宝石衬底上成功制备了β-Ga₂O₃薄膜。借助于X射线衍射(XRD)、拉曼散射光谱(Raman)、X射线光电子能谱(XPS)、以及二次离子质谱(SIMS)研究了缺陷对β-Ga₂O₃薄膜的结构和光学特性的影响。结果表明,未退火的Ga₂O₃薄膜呈现非晶态,随高温退火时间逐渐增加,非晶Ga₂O₃薄膜逐步转变为沿(-201)方向择优生长的β-Ga₂O₃薄膜。所有Ga₂O₃薄膜在近紫外到可见光区的平均透过率都高达95%,β相Ga₂O₃薄膜的光学带隙比非晶态薄膜增加~0.3 eV,且随退火时间的增加,β-Ga₂O₃薄膜的光学带隙也随之变宽。此外,发现非晶Ga₂O₃薄膜富含氧空位缺陷,高温退火处理后,β-Ga₂O₃薄膜中的氧空位浓度明显降低,但蓝宝石衬底中的Al极易扩散至Ga₂O₃薄膜层,并随退火时间的增加Al浓度明显增加,氧空位的降低和Al杂质的增加是导致β-Ga₂O₃薄膜光学带隙变宽的主要原因。     

MOFs衍生的Sn掺杂In2O3材料的制备及氯气气敏性能

采用简单的水热法制备了Sn掺杂的有机框架化合物(MOFs),再煅烧衍生出Sn掺杂In₂O₃(Sn-In₂O₃)气敏材料。表征结果表明，材料的形貌是中空微米棒且材料的比表面积较大、Sn元素成功被掺杂，材料表面的氧空位浓度也较大。气敏测试结果表明，Sn-In₂O₃中空微米棒材料对低浓度Cl₂具有较大的灵敏度，理论最低检测限低至0.37×10^-9。通过气敏机理分析，其优良的Cl₂气敏性能主要归因于材料的中空结构、大的比表面积和丰富的氧空位，这主要来源于MOFs模板法的制备和Sn元素的掺杂。     

基于低温原位法制备Ga2O3或In2O3电子收集层的高效有机太阳电池

有机太阳电池(OSCs)中,温和的界面材料制备工艺对于拓宽材料适用范围和提高器件能量转换效率(PCE)具有重要作用.本文提出了简便易行的In₂O₃和Ga₂O₃电子收集层的制备方法,即旋涂In(acac)3和Ga(acac)3异丙醇前驱体溶液并结合低温热退火.在基于PM6:Y6的OSCs中引入In₂O₃和Ga₂O₃电子收集层,得到了性能优异的器件, PCE分别达到16.17和16.01.对比研究发现, In₂O₃的功函数WF为4.58 eV,这比WF为5.06 eV的Ga₂O₃更有利于与ITO电极形成欧姆接触,因此基于前者的器件开路电压更高.此外,电化学阻抗谱EIS的研究进一步揭示了In₂O₃和Ga₂O₃对器件内部电荷转移过程的影响及其性能差异的由来:In₂O₃的串联电阻损耗虽然较低,但Ga₂O₃的复合电阻较高,所以一定程度上提高了基于Ga₂O₃的器件的填充因子,进而补偿了其串联电阻的损失.本论文的对比研究发现, In₂O₃和Ga₂O₃都是OSCs优异的电子收集层.     

Sr、Nb掺杂(Bi0.5Na0.5)0.94Ba0.06TiO3陶瓷的介电性能研究

采用固相反应法制备Sr、Nb掺杂BNBT无铅压电陶瓷,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和介电谱仪表征了样品的晶体结构,表面形貌及介电性能,研究了陶瓷的相结构,微观形貌和介电响应。结果表明,BNBT陶瓷为单一的钙钛矿结构,而BNBT-3SN、BNBT-3SN-3Sr和BNBT-3SN-1Nb陶瓷除了主相钙钛矿结构,存在少量第二相。形貌结构显示出样品相对比较致密,晶粒尺寸分布均匀。SrNb₂O₆的引入使介电峰T_s向低温方向移动,增强弛豫相变程度从而提高了陶瓷基体的介电温度稳定性,BNBT-3SN陶瓷在40～406℃内表现出良好的温度稳定性。通过阻抗图谱分析可知,所有样品主要为晶界传导机制。而且研究表明Sr、Nb掺杂可通过对BNBT-3SN陶瓷氧空位浓度的作用,实现对电导率的调控。随着Sr²⁺的增加,样品的氧空位浓度增加,电导率增大;而Nb⁵⁺的增加,填充了氧空位导致氧空位浓度减小促使电导率降低。     

稀土Sm掺杂的YbBaCo4O7+δ纳米粉体制备及其氧吸附性能的研究

采用溶胶凝胶制备了不同浓度Sm掺杂的YbBaCo₄O_7+δ氧吸附材料，并利用XRD分析、SEM和差热分析仪等仪器对其进行了结构、形貌、氧吸附/脱附性能分析，研究了不同浓度Sm掺杂对YbBaCo₄O_7+δ氧吸附/脱附性能的影响，测试结果表明：在较低掺杂浓度下，稀土元素Sm完全进入了Yb_1-xSm_xBaCo₄O_7+δ纳米粉体的晶格，Yb_1-xSm_xBaCo₄O_7+δ纳米粉体仍是单一的114相结构；稀土元素Sm掺杂对Yb_1-xSm_xBaCo₄O_7+δ纳米粉体的形貌影响较小。氧吸附/脱附性能测试结果表明：一定量的稀土元素Sm掺杂可以明显提高的YbBaCo₄O_7+δ纳米粉体的氧吸附性能，YbBaCo     

不同晶型Fe2O3催化H2O2湿法脱硝的实验研究

研究了以α-Fe₂O₃、β-Fe₂O₃和γ-Fe₂O₃为催化剂的类Fenton试剂溶液氧化吸收NO的过程,分析了3种Fe₂O₃的晶相结构和表面性质对NO脱除效率的影响机理。脱硝性能测试结果表明：γ-Fe₂O₃的活性最好,在H₂O₂浓度为1.5 mol/L、催化剂浓度为20 mmol/L、pH值为5以及反应温度为55℃等条件下,γ-Fe₂O₃的脱硝率可达87.5%。机理研究表明：3种Fe₂O₃催化H₂O₂分解湿法脱除NO的反应发生在催化剂表面,反应过程中存在氧化还原循环,H₂O₂催化分解的主要产物是·OH。活性差异分析结果表明：Fe₂O₃的晶相结构和表面性质对NO的脱除效果具有显著的影响,γ-Fe₂O₃的活性最高是由于比表面积大、分散性高和表面的Fe²⁺含量更多,而β-Fe₂O₃的活性高于α-Fe₂O₃是由于表面的氧空位含量更多。     

不同退火温度下Zn0.96Co0.04O薄膜的磁性研究

通过对磁控溅射方法制备的Zn_0.96Co_0.04O薄膜退火前后结构和磁性的研究发现,Co进入ZnO的晶格中并取代了Zn的位置,形成稀磁半导体结构,显示了室温铁磁性。后期真空退火可以产生更多的氧空位,提高BMP之间发生交叠的几率,从而使磁矩增大。因此可以认为氧空位是产生磁性的必要条件,其磁性来源机制符合J.M.D.Coey的BMP模型。     

退火对Cr3+离子掺杂Al2O3薄膜的结构及发光性能影响

用脉冲激光沉积技术在Si(100)基底上制备了纯Al2O3、掺杂浓度为0.3%、1%(质量分数)的Cr3+∶Al2O3薄膜。制备态的薄膜为立方γ-Al2O3结构,经800℃真空条件下退火1h样品的结晶度有所提高,呈现α-Al2O3相与γ-Al2O3相的衍射峰。薄膜基本保持了靶材中原有各元素成分比例,平均粒径为250nm,形貌为条形。与Al2O3粉体相比,制备态薄膜在386nm处的发光峰强度明显提高。这可归因于薄膜中氧空位的增加使双氧空位吸收电子所产生的F2+色心浓度提高。薄膜经真空退火后在332、398nm附近的发光峰强度明显增强,这是由于薄膜中氧空位的增加提高了F+、F色心浓度。与此同时,制备态薄膜在386nm附近发光峰经退火后由386nm蓝移至381nm,可归因于退火后制备态薄膜的内应力得到了释放。1%(质量分数)Cr3+掺杂薄膜在646、694nm出现Cr3+离子由4 T2能级跃迁至4 A2能级及由E-能级跃迁至4 A2能级产生的荧光发光峰。     

ZnO/In2O3纳米异质结的合成及其光催化性能的研究

通过热水解法成功制备出了形貌均一的ZnO/In₂O₃异质结光催化材料, 采用场发射扫描电子显微镜(FESEM)、X射线衍射仪(XRD)以及透射电子显微镜(TEM)对样品的形貌及结构进行表征。结果表明: ZnO/In₂O₃异质结是由直径约200~300 nm、厚度约40~60 nm的六边形纳米片镶嵌着In₂O₃纳米小颗粒组成。对比纯ZnO、纯In₂O₃和该光催化材料对罗丹明B(RhB)的可见光降解效率, 发现ZnO/In₂O₃异质结光催化材料对RhB具有较高的光催化效率, 其原因是窄带系半导体In₂O₃能够有效地吸收可见光, 当ZnO与In₂O₃ 形成异质结时, In₂O₃能带上被可见光激发的电子会迁移到ZnO的导带上, 而光激发的空穴仍保留在In₂O₃价带, 这样有助于光生电子和空穴的分离, 降低其复合几率, 从而有效地提高了ZnO的光催化效率。     

Chemical bath deposition of indium sulphide thin films: preparation and characterization

Indium sulphide (In₂S₃) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In₂S₃ thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline ( phase). The optical band gap of In₂S₃ thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis.     

Properties of thin In2O3 and SnO2 films prepared by corona spray pyrolysis, and a discussion of the spray pyrolysis process

Thin films of doped In₂O₃ and SnO₂ were prepared by the “corona spray pyrolysis” technique with a deposition efficiency of 80%. The electrical and optical properties of the films were determined. A transmission of 88% in the visible region and an IR reflection of more than 90% were the maximum values obtainable for a doped In₂O₃ film.

A detailed discussion of the physical and chemical processes that occur during spray pyrolysis is presented to aid the understanding of this coating technique.

A minimum temperature of about 350°C for the formation of In₂O₃ was empirically confirmed.

Furthermore the powdery precipitate obtained during deposition of In₂O₃ was clearly identified as polycrystalline In₂O₃ formed by a homogeneous reaction.     

Investigation on the cross sensitivity of NO2 sensors based on In2O3 thin films prepared by sol-gel and vacuum thermal evaporation

In₂O₃ thin films have been prepared from commercially available pure In₂O₃ powders by high vacuum thermal evaporation (HVTE) and from indium iso-propoxide solutions by sol-gel techniques (SG). The films have been deposited on sapphire substrates provided with platinum interdigital sputtered electrodes. The as-deposited HVTE and SG films have been annealed at 500°C for 24 and 1 h, respectively. The film morphology, crystalline phase and chemical composition have been characterised by SEM, glancing angle XRD and XPS techniques. After annealing at 500°C the films’ microstructure turns from amorphous to crystalline with the development of highly crystalline cubic In₂O_3−x (JCPDS card 6-0416). XPS characterisation has revealed the formation of stoichiometric In₂O₃ (HVTE) and nearly stoichiometric In₂O_3−x (SG) after annealing. SEM characterisation has highlighted substantial morphological differences between the SG (highly porous microstructure) and HVTE (denser) films. All the films show the highest sensitivity to NO₂ gas (0.7–7 ppm concentration range), at 250°C working temperature. At this temperature and 0.7 ppm NO₂ the calculated sensitivities (S=R_g/R_a) yield S=10 and S=7 for SG and HVTE, respectively. No cross sensitivity have been found by exposing the In₂O₃ films to CO and CH₄. Negligible H₂O cross has resulted in the 40–80% relative humidity range, as well as to 1 ppm Cl₂ and 10 ppm NO. Only 1000 ppm C₂H₅OH has resulted to have a significant cross to the NO₂ response.     

Electrical characterization of Ta2O5 films deposited by laser reactive ablation of metallic Ta

Tantalum oxide films have been deposited by 355 nm pulsed laser ablation of metallic Ta target in O₃/O₂ ambient. The structure and the composition of as-deposited and annealed films were examined by X-ray diffraction and Fourier transform infrared spectroscopy. The measurements of the current–voltage and capacitance–voltage characteristics of the Al/Ta₂O₅/Si capacitors were performed to reveal the electrical properties of the Ta₂O₅ films. The effects of annealing temperature on the characteristics of thin films have been studied. The results suggest that the films annealed above 700°C have the structure of orthorhombic β-Ta₂O₅, thc annealing treatment at high temperature decreases the bulk trap charge, the border trap, and the interface trap densities of as-deposited films, and improves significantly the dielectric and electrical properties of Ta₂O₅ film.     

New transparent conducting MgIn2O4---Zn2In2O5 thin films prepared by magnetron sputtering

New materials for a transparent conducting oxide film are demonstrated. Highly transparent Zn₂In₂O₅ films with a resistivity of 3.9 × 10⁻⁴ Ω cm were prepared on substrates at room temperature using a pseudobinary compound powder target composed of ZnO (50 mol.%) and In₂O₃ (50 mol.%) by r.f. magnetron sputtering. MgIn₂O₄---Zn₂In₂O₅ films were prepared using MgIn₂O₄ targets with a ZnO content of 0–100 wt.%. The resistivity of the deposited films gradually decreased from 2 × 10⁻³ to 3.9 × 10⁻⁴ Ω cm as the Zn/(Mg + Zn) atomic ratio introduced into the films was increased. The greatest transparency was obtained in a MgIn₂O₄ film. The optical absorption edge of the films decreased as the Zn/(Mg + Zn) atomic ratio was increased, corresponding to the bandgap energy of their materials. It was found that the resistance of the undoped Zn₂In₂O₅ films was more stable than either the undoped MgIn₂O₄, ZnO or In₂O₃ films in oxidizing environments at high temperatures.     

Ozone sensing using In2O3-modified Ga2O3 thin films

It is shown that at elevated temperatures the conductance of an In ₂O₃-modified Ga₂O₃ thin film depends significantly and reversibly on the ozone concentration in the ambient air. This ozone sensitivity is much greater than with pure Ga ₂O₃ or In₂O₃ thin films, respectively. The ozone sensitivity of the In₂O₃-modified Ga₂O₃ thin film is characterized by an impressive selectivity, and is maximal at an operation temperature of about 600°C. The cross sensitivities to other gases present in ambient conditions are small compared to the ozone sensitivity, thus opening the way to use this system for ambient ozone monitoring. The results are discussed using an electron injection model     

Sc2W3O12薄膜制备及其负热膨胀性能

采用脉冲激光沉积法制备了斜方相Sc₂W₃O₁₂薄膜。利用X射线衍射仪(XRD)和场发射扫描电镜(FESEM)对Sc₂W₃O₁₂靶材和Sc₂W₃O₁₂薄膜组分、表面形貌和靶材断面形貌进行表征, 研究衬底温度与氧分压对薄膜制备的影响。采用变温XRD和热机械分析仪(TMA)分析了Sc₂W₃O₁₂陶瓷靶材和薄膜的负热膨胀特性。实验结果表明: 经1000℃烧结6 h得到结构致密的斜方相Sc₂W₃O₁₂陶瓷靶材, 其在室温到600℃的温度范围内平均热膨胀系数为-5.28×10^-6 K^-1。在室温到500℃衬底温度范围内脉冲激光沉积制备的Sc₂W₃O₁₂薄膜均为非晶态, 随着衬底温度的升高, 薄膜表面光滑程度提高; 随着沉积氧压强增大, 表面平整性变差。非晶膜经1000℃退火处理7 min后得到斜方相Sc₂W₃O₁₂多晶薄膜, 在室温到600℃温度区间内, Sc₂W₃O₁₂薄膜的平均热膨胀系数为-7.17×10^-6 K^-1。     

Atomic layer deposition growth of zirconium doped In2O3 films

Zirconium doped indium oxide thin films were deposited by the atomic layer deposition technique at 500 °C using InCl₃, ZrCl₄ and water as precursors. The films were characterised by X-ray diffraction, energy dispersive X-ray analysis and by optical and electrical measurements. The films had polycrystalline In₂O₃ structure. High transparency and resistivity of 3.7×10⁻⁴ Ω cm were obtained.     

The influence of film structure on In2O3 gas response

This paper reports the influence of In₂O₃ film structure on gas-sensing characteristics measured in steady state and transient modes. Films were deposited by spray pyrolysis from InCl₃–water solutions. Correlation between gas-sensing parameters and structural parameters such as film thickness (20–400 nm), grain size (10–70 nm), refractive index and film texture (I(400)/I(222)) were established. It was shown that grain size and porosity are the parameters of In₂O₃ films that best control gas response to ozone. In the detection of reducing gases, the influence of film structure is less important. Decreases in film thickness, grain size and degree of texture are the best way to decrease time constants of the gas response of In₂O₃-based gas sensors.