共查询到17条相似文献,搜索用时 140 毫秒
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一种新型非致冷红外探测器 总被引:2,自引:0,他引:2
介绍一种基于标准硅工艺、采用电容读出方式微悬臂梁非制冷红外探测器的设计、制作及性能测试。用这两种热膨胀系数相差很大材料(氮化硅和铝)的薄膜做成的双材料微悬臂梁在红外辐射下,温度升高并发生弯曲。通过检测微悬臂梁和衬底形成的一个可变电容变化可以得知微悬臂梁的弯曲情况,从而可以探测红外辐射的信息。利用外部测试设备对单元探测器进行测试表明微悬臂梁对红外辐射有很高的响应。 相似文献
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介绍了一种基于标准硅工艺的电容读出式微悬臂梁非制冷红外探测器的设计、制作以及集成读出电路的设计。该探测器用于探测室温下物体的红外辐射,其响应波长为8~12 μm 。由于氮化硅和铝的热膨胀系数相差很大,用这两种材料的薄膜做成的双材料微悬臂梁在红外辐射下会发生弯曲,微悬臂梁和衬底形成一个可变电容,通过检测电容的变化来反映微悬臂梁的弯曲,从而可以探测红外辐射的情况。采用和探测器集成的CMOS读出电路对探测器信号进行读取,微悬臂梁的电容灵敏度可达2.5 fF/K,温度分辨率为0.1 K。 相似文献
3.
PVDF聚合物热释电薄膜是一种新的激光与红外辐射探测器材料,它比无机薄膜更易于与硅微加工工艺为基础的硅读出电路兼容.本文用旋涂法制备了一种聚合物热释电薄膜,对其进行了红外光谱和X射线衍射分析,并研究了其热释电响应特性,结果表明与其他方法(流延法和压膜法)相比,旋涂法制备的聚合物薄膜样品对热响应具有更高的灵敏度,更适合用作激光与红外辐射探测器材料.(PH2) 相似文献
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本发明提供一种光导型测辐射热计红外探测器。这种红外探测器是用一种电阻会随入射红外辐射的光激发和热激发而变化的探测器材料制作的。对于这种探测器材料来说,由光激发和热激发引起的电阻变化是叠加的。该探测器材料悬置在衬底上面,它与衬底之间的间隙为入射辐射的四分之一波长, 相似文献
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红外探测器是一种敏感辐射的传感器,它利用自然界某些材料在受到辐射照射之后电学性质发生变化的特性,把辐射信号转换成电信号.通过红外探测器这种功能器件,以电信号形式感知辐射信号,结果形成了敏感或探测红外辐射的一系列仪器.30年来,在军 相似文献
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非制冷色散式成像光谱仪辐射传递模型 总被引:1,自引:0,他引:1
根据接收信号信噪比,研究了基于非制冷微测辐射热计阵列构造色散式成像光谱仪的可行性.综合考虑目标红外辐射特性、大气传输透过率、仪器接收孔径、色散式光谱仪辐射传递特性、红外阵列探测器参数、数据链传输等环节,建立了完善的色散式长波红外成像光谱仪辐射能量传递模型.选用典型地物红外发射率数据,非制冷微测辐射热计红外焦平面阵列参数,利用低分辨率大气辐射传输计算软件LOWTRAN生成大气红外透过率曲线,依据传递模型,计算了以非制冷微测辐射热计阵列为探测器的色散式长波红外成像光谱仪可达到的光谱分辨率,验证了依据非制冷红外探测器构建小型红外成像光谱遥感器的潜力. 相似文献
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给出了一种用于非制冷光学读出红外探测器的核心器件--双材料微悬臂梁阵列的设计和制作.微梁阵列是无硅基底的SiNx/Au双材料单层膜结构,其制作工艺简单、可以直接放在空气中成像.实验使用了设计制作的140×98微梁阵列和高信噪比的12-bit CCD,得到120℃以上的物体热像,噪声等效温度差(NETD)为7K左右,实验结果与热机械模型预测结果一致. 相似文献
10.
微测辐射热计的红外热响应模拟 总被引:4,自引:0,他引:4
利用有限元法对微桥结构的测辐射热计进行了二维热模拟.定量地分析了探测单元的大小尺寸、支撑层的厚度,支撑臂的长度和宽度、引线材料的选取等对微测辐射热计探测单元在红外辐射下温度的变化和热响应的快慢情况.评估了真空封装对微测辐射热计红外响应的影响.同时作为比较对平板空腔结构的红外探测器也进行了分析. 相似文献
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An optical readout uncooled infrared (IR) imaging detector of bimaterial cantilever array using knife-edge filter operation (KEFO) is demonstrated. The angle change of each cantilever in a focal plane array (FPA) can be simultaneously detected with a resolution of 10-5 degree. A deformation magnifying substrate-free micro-cantilever unit with multi-fold interval metallized legs is specially designed and modeled. A FPA with 160×160 pixels is fabricated and thermal images with noise equivalent temperature difference (NETD) of 400 mK are obtained by this imaging detector. 相似文献
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Binbin Jiao Chaobo Li Dapeng Chen Tianchun Ye Yi Ou Lijun Dong Qingchuan Zhang Zheying Guo Fengliang Dong 《Journal of Infrared, Millimeter and Terahertz Waves》2008,29(3):261-271
This paper presents an optical readout method based uncooled infrared imaging system that contains an optical read-out section and a bi-material micro-cantilever arrays (BMCA) detector. The optical read-out section is based on incoherent light spatial filter technique. The read-out section converts the deflection angles of BMCA caused by absorption of infrared (IR) radiation to a visible image through optical filtering operation of the BMCA with a knife-edge filter. A spatial mathematical model is presented to describe the read-out method and its validity is proved. The IR image of a person’s hand obtained through the using of the 100?×?100 BMCA and the 12-bit A/D quantizer demonstrates the ability of the system to create image. The performance test shows that the average Noise-equivalent temperature difference (NETD) of the imaging system can arrive at about 183mK with some areas having a NETD as low as 78mK. 相似文献
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Kaiqun Wang Chenyang Xue Ting Liang Binbin Jiao Wendong Zhang Dapeng Chen Jijun Xiong 《Journal of Infrared, Millimeter and Terahertz Waves》2010,31(7):810-820
In this paper, the design, fabrication and experimental results of the thermopile infrared detector, with a single layer of
low-stress SiNx membrane, instead of thin sandwich layer membrane of SiO2–Si3N4 are presented. Thermal isolation is achieved by using back etching of bulk silicon. Thermopiles are consisted of serially
interconnected p-poly-Si/Al thermocouples supported by the single layer of SiNx membrane with low stress. Au/Ti reflective coating was evaporated on the surface of cold junctions of the thermopile to block
incident radiation. In the measurement, we find that infrared absorbance of SiNx membrane to different wavelength is diverse and less than 100%, which has great influence on calculating the actual absorbing
power of the detector, so the infrared (IR) transmission spectrum is measured to calibrate the actual infrared absorbing amount
of the detector. The analysis result shows that only 43.72% infrared radiation is absorbed by the detector. Based on the measurement
of IR transmission spectrum and output voltage of the detector, the response sensitivity of the detector is calculated as
31.65 V/W, detectivity of the detector is 1.16 × 108 cmHz(1/2)W−1, and response time of the detector is 126 ms. 相似文献
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J. Antoszewski K. J. Winchester A. J. Keating T. Nguyen K. K. M. B. D. Silva C. A. Musca J. M. Dell L. Faraone P. Mitra J. D. Beck M. R. Skokan J. E. Robinson 《Journal of Electronic Materials》2005,34(6):716-721
A monolithically integrated low-temperature micro-electro-mechanical systems (MEMS) and HgCdTe infrared (IR) detector technology
is introduced, implemented, and characterized. The ultimate aim of this project is to develop a MEMS-based optical filter,
integrated with an IR detector, that selects narrow wavelength bands within the short-wavelength IR (SWIR) region of the spectrum.
The entire fabrication process is compatible with two-dimensional IR focal plane array technology, and needs to be compatible
with a proposed electrically tunable MEMS filter based on a Fabry-Perot optical cavity. The fabricated device consists of
an HgCdTe SWIR photoconductor, distributed Bragg mirrors formed of Ge-SiO-Ge, a sacrificial spacer layer within the cavity,
and a silicon nitride membrane for structural support. Mirror stacks fabricated on silicon, identical to the structures that
will form the optical cavity, have been characterized to determine the optimum filter characteristics. The measured full-width
at half-maximum (FWHM) was 34 nm at the center wavelength of 1,780 nm with an extinction ratio of 36.6. Fully integrated filters
on HgCdTe photoconductors with a center wavelength of approximately 1,950 nm give a FWHM of approximately 100 nm, and a peak
responsivity of approximately 8×104 V/W. The experimental results are in good agreement with the optical model, which takes into account mirror reflectivity,
absorption within the cavity by the spacer material, and absorption by the silicon nitride support structure. 相似文献
17.
Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance 总被引:1,自引:0,他引:1
M. Carmody J. G. Pasko D. Edwall R. Bailey J. Arias S. Cabelli J. Bajaj L. A. Almeida J. H. Dinan M. Groenert A. J. Stoltz Y. Chen G. Brill N. K. Dhar 《Journal of Electronic Materials》2005,34(6):832-838
The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications
is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon
substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical
challenges of growing low defect density HgCdTe on silicon where the lattice mismatch is ∼19%. This is especially true for
LWIR HgCdTe detectors where the performance can be limited by the high (∼5×106 cm−2) dislocation density typically found in HgCdTe grown on silicon. We have fabricated a series of long wavelength infrared
(LWIR) HgCdTe diodes and several LWIR focal plane arrays (FPAs) with HgCdTe grown on silicon substrates using MBE grown CdTe
and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific’s planar diode architecture. The diode
and FPA and results at 78 K will be discussed in terms of the high dislocation density (∼5×106 cm2) typically measured when HgCdTe is grown on silicon substrates. 相似文献