A 7-Gc/s Narrow-Band Waveguide Switch Using p-i-n Junction Diodes

A narrow-band waveguide switch with power capability in excess of 8 watts has been designed in WR137 waveguide. j-i-n diodes are used in band elimination filter sections. the attenuation in the reject band is greater than 80 dB over a 10 Mc/s range, and the passband loss is less than 0.5 dB.     

210-320 GHz Multi-Hole Directional Coupler Design and Measurement

The design of a 210-320 GHz multi-hole directional coupler is described. The coupler performance is measured with a millimeter vector analyser across the band 205-350 GHz and compared with simulations. The coupler consists of two waveguides whose broad walls are separated by a thin metal sheet with an array of circular holes according to a Chebyshev distribution of couplings. The coupling is 11 dB with a typical variation of ± 2dB across the WR3 band and the isolation is more than 25 dB.     

Symmetric Reverse-Coupling Waveguide Orthomode Transducer for the 3-mm Band

We describe the design, construction, and performance of a waveguide orthomode transducer (OMT) for the 3-mm band (84-116 GHz). The OMT is based on a symmetric backward coupling structure and has a square waveguide input port (2.54 mm times 2.54 mm) and two single-mode waveguide outputs: a standard WR10 rectangular waveguide (2.54 mm times 1.27 mm), and an oval waveguide with full-radius corners. The reverse coupling structure is located in the common square waveguide arm and splits one polarization signal in two opposite rectangular waveguide sidearms using broadband -3-dB .E-plane branch-line hybrid couplers. The device was optimized using a commercial 3-D electromagnetic simulator. The OMT consists of two mechanical blocks fabricated in split- block configuration using conventional CNC milling machine. From 84 to 116 GHz, the measured input reflection coefficient was less than -17 dB, the cross polarization was less than -30 dB, the isolation between the outputs was greater than 50 dB, and the insertion loss was less than 0.35 dB at room temperature for both polarization channels. The device is suitable for scaling to higher frequency.     

0.1 THz鳍线单平衡式基波混频电路研究

研究了一种基于石英基片的0.1 THz频段的鳍线单平衡混频电路,混频电路的射频和本振信号分别从WR10标准波导端口通过波导单面鳍线微带过渡和波导微带探针过渡输入,中频信号通过本振中频双工器输出。这是一种新型的混频电路形式,与传统的W波段混频器相比,混频电路可以省略一个复杂的W波段滤波器,具有电路设计简单、安装方便的特点。该电路使用两只肖特基二极管通过倒装焊工艺粘结在厚度为75 m的石英基片上,石英基片相对传统基板,可以极大提高电路加工精度。在固定50 MHz中频信号时,射频90~110 GHz范围内,0.1 THz混频器单边带变频损耗小于9 dB。     

On Surface Losses in Direct Metal Laser Sintering Printed Millimeter and Submillimeter Waveguides

Different lengths of WR3 (220–330 GHz) and WR10 (75–110 GHz) waveguides are fabricated through direct metal laser sintering (DMLS). The losses in these waveguides are measured and modelled using the Huray surface roughness model. The losses in WR3 are around 0.3 dB/mm and in WR10 0.05 dB/mm. The Huray equation model is accounting relatively good for the attenuation in the WR10 waveguide but deviates more in the WR3 waveguide. The model is compared to finite element simulations of the losses assuming an approximate surface structure similar to the resulting one from the DMLS process.     

Submillimeter-Wave InP MMIC Amplifiers From 300–345 GHz

In this letter, we describe the design, fabrication, simulation, and measured performance of a single-stage and three-stage 320 GHz amplifier using Northrop Grumman Corporation's (NGC) 35-nm InP high electron mobility transistor submillimeter-wave monolithic integrated circuit (S-MMIC) process. On-wafer S-parameter measurements using an extended waveguide band WR3 vector network analyzer system were performed from 210-345 GHz. We measured 5 dB of gain for the single-stage amplifier at 340 GHz and 13-15 of gain from 300-345 GHz for the three-stage S-MMIC amplifier.     

High performance dual directional couplers for near-mm wavelengths

A low loss, high directivity dual directional coupler has been developed suitable for fabrication in waveguide bands up to WR3 (220-325 GHz). The design uses waveguide split on the E plane centerline with three waveguides running side by side and coupling holes made by drilling through all three guides. Construction is relatively simple and the resulting structure is very robust mechanically. Typical coupling is 15 dB, directivity is 25-30 dB, and the insertion loss of the WR3 coupler is 0.5 dB     

170 GHz和340 GHz CSMRs滤波器选频网络研究

为了实现倍频器多谐波输出,满足系统多频率需求,同时减少成本,增加系统集成度,引入了改进紧凑型悬置微带谐振单元（Compact Suspended Microstrip Resonators（CSMRs））滤波器,主要研究并实现了170 GHz和340 GHz双频段分别输出。仿真中分别设计170 GHz和340 GHz探针,引入CSMRs低通滤波器增加170 GHz对高频段的隔离,减小波导高度,提高WR.2.8波导截止频率,增加对300 GHz以下频段抑制,为了测试其输出特性和网络损耗,设计170~340 GHz背靠背模块。仿真结果为低通CSMRs滤波器满足在20~180 GHz通带内反射系数小于-18 dB,在266~520 GHz阻带内抑制度大于20 dB,背靠背结构仿真170 GHz与340 GHz频段反射系数均小于-15 dB,端口隔离大于30 dB,表现出良好的选频特性。测试结果表明:在170 GHz端口通带为150~185 GHz,反射系数小于-10 dB,损耗大于1.2 dB;在340 GHz端口,通带为306~355 GHz,反射系数小于-10 dB,损耗2 dB,两端口隔离度大于10 dB,最好60 dB。     

Design and Development of Thermistor based Power Meter at 140 GHz Frequency Band

Design and development of thermistor based power meter at 140 gigahertz (GHz) frequency band have been presented. Power meter comprises power sensor, amplifier circuit and dialog based graphical user interface in visual C++ for the average power measurement. The output power level of a component or system is very critical design factor. Thus there was a need of a power meter for the development of millimeter wave components at 140 GHz frequency band. Power sensor has been designed and developed using NTC (Negative Temperature Coefficient) thermistors. The design aims at developing a direct, simple and inexpensive power meter that can be used to measure absolute power at 140 GHz frequency band. Due to absorption of 140 GHz frequencies, resistance of thermistor changes to a new value. This change in resistance of thermistor can be converted to a dc voltage change and amplified voltage change can be fed to computer through data acquisition card. Dialog based graphical user interface (GUI) has been developed in visual C++ language for average power measurement in dBm. WR6 standard rectangular waveguide is the input port for the sensor of power meter. Temperature compensation has been achieved. Moderate sensor return loss greater than 20 dB has been found over the frequency range 110 to 170 GHz. The response time of the power sensor is 10 second. Average power accuracy is better than ±0.25 dB within the power range from −10 to 10 dBm at 140 GHz frequency band.     

Superconductor-Insulator-Superconductor Mixers for the 2 mm Band (129-174 GHz)

We present the design, construction and performance of backshort-tuned Single Side Band (SSB) and of fixed-tuned Double Side Band (DSB) Superconductor-Insulator-Superconductor (SIS) mixers covering the frequency range of 129-174 GHz (2 mm band). Receivers employing these SSB mixers have been continuously operated for astronomical observations on the six antennas of the IRAM Plateau de Bure Intereferometer (PdBI) since 2007 and on the IRAM 30 m Pico Veleta (PV) radio telescope since 2009. The DSB version of the mixer was employed in a prototype of a four-element focal plane array that was tested on the IRAM 30 m radio telescope. Both SSB and DSB mixers employ the same chip and are based on a wideband single ended probe transition from WR6 full-height waveguide to thin-film microstrip line and on a series array of two Nb/Al-AlO_x/Nb junctions. The measured receiver noise for the four-element DSB mixer array pumped by a Gunn oscillator cascaded with a frequency doubler was in the range 25-35 K across the 135-168 GHz LO band. The PdBI and PV receivers equipped with the SSB mixers have measured noise temperatures in the range of 30 K to 60 K and an image sideband rejection below -10 dB over the 129-174 GHz RF band. The measurement results agree well with the predictions obtained through detailed simulations of the SIS receivers based on the standard theory of quantum mixing.     

Investigation of the characteristics of low-cost and lightweight horn array antennas with novel monolithic waveguide feeding networks

3D printed X-Ku band single horn antenna and 2 × 1 and 2 × 2 pyramidal horn array antennas with novel lightweight and monolithic waveguide feeding networks (WFNs) are proposed at 10–15 GHz for satellite communications and radar systems to increase the gain. Proposed novel fabrication method consists of two main steps that are to make the skeleton of horn array antenna from acrylonitrile butadiene styrene (ABS) thermoplastic via 3D printer and to perform copper plating over all surface of antenna by using the electroless plating and electroplating processes. The WFN structures with 3λ element spacing designed and realized by using WR75 waveguide T-junction, E-type bend, and UDR 120 flange. Qualitative agreement between measurement and simulation via CST Microwave Studio is obtained with max 1 dB due to high precision and surface roughness. The gains of array antennas are increased by about 1.5 dB and 3 dB, respectively compared to the single antenna. VSWRs of array antennas are 0.3 dB and 0.6 dB, respectively higher than the single one. In the study, proposed 3D printed components not only with 90% lighter weight than, but also with 80% cheaper than commercial products, and horn arrays with -40 dB cross-polarization values.     

A 385–500 GHz SIDEBAND-SEPARATING (2SB) SIS MIXER BASED ON A WAVEGUIDE SPLIT-BLOCK COUPLER

We have developed a 385–500 GHz sideband-separating (2SB) mixer, which is based on a waveguide split-block coupler at the edge of the H-plane of the 508 μm × 254 μm (WR 2.0) waveguide, for the Atacama Large Millimeter/submillimeter Array (ALMA). An RF/LO coupler, which contains an RF quadrature hybrid, two LO couplers, and an in-phase power divider, was designed with the issue of mechanical tolerance taken into account. The RF/LO coupler was measured optically with a microscope and electrically with a submillimeter vector network analyzer. The image rejection ratio (IRR) and the single-sideband (SSB) noise temperature of the receiver using the RF/LO coupler have also been measured. The IRR was found to be larger than 8 dB and typically ～ 12 dB in the 385–500 GHz band. The SSB noise temperature of this receiver is 80 K at the band center, which corresponds to 4 times the quantum noise limit (hf/k) in SSB, and 250 K at the band edges.     

具有正斜率增益的GaAs MMIC宽带放大器芯片设计

介绍了一种宽带放大器芯片,该放大器的工作频率覆盖了2～12 GHz,采用砷化镓(GaAs)赝配高电子迁移率晶体管(PHEMT)单片电路工艺实现。在一个宽带负反馈放大器的前面集成了一个幅度均衡器,使放大器的增益在整个带内具有7 dB的正斜率,频率低端(2 GHz)增益为3 dB,高端(12 GHz)为10 dB,输入输出电压驻波比为1.6∶1,饱和输出功率为20 dBm,芯片尺寸为2.0 mm×1.5 mm×0.1 mm。详细描述了电路的设计流程,并对最终的测试结果进行了分析。该芯片具有频带宽、体积小、使用方便的特点,可作为增益块补偿微波系统中随着频率升高而产生的增益损失。     

Design of an asymmetrical dual-band WLAN filter in liquid crystal polymer (LCP) system-on-package technology

A single-input-single-output (SISO) dual-band filter operating at ISM 2.4-2.5GHz and UNII 5.15-5.85GHz frequency bands, using the novel "dual behavior resonators" technique has been developed. Exploiting the strong second resonant frequency of resonators to realize the filtering response, allows for achieving the asymmetric shape and the good rejection between the two bands. The insertion loss and return loss at the central frequency are -2.4 dB and -15 dB for the 2.4-GHz band, respectively, and -1.8 dB and -10 dB for the 5-GHz band, respectively. The filter has been fabricated using the novel liquid crystal polymer (LCP) based multilayer packaging technology, enabling a low cost SOP implementation.     

Design and performance of wideband GaAs MMIC's for high-speedoptical communication systems

Advanced design techniques for GaAs wideband direct-coupled amplifiers are described. The amplifier achieved a 20 dB gain with a 3 dB bandwidth of 13 GHz and a 5-7 dB noise figure. An equalizing amplifier module consisting of amplifier and variable attenuator monolithic microwave integrated circuits (MMICs) exhibited a high gain of 43 dB over a 10 GHz band with a controllable gain of 20-43 dB     

A 4-9 GHz 10 W wideband power amplifier

A 4-9 GHz wideband high power amplifier is designed and fabricated, which has demonstrated saturated output power of 10 W covering 6-8 GHz band, and above 6 W over the other band. This PA module uses a bal-ance configuration, and presents power gain of 7.3 ± 0.9 dB over the whole 4-9 GHz band and 39% power-added efficiency (PAE) at 8 GHz. Both the input and output VSWR are also excellent, which are bellow -10 dB.     

Dual polarised microstrip patch antenna with high port isolation

A probe fed stacked microstrip patch antenna for operation in dual polarisation mode is proposed. A slot loaded lower patch is presented to improve isolation between the two polarisation ports. Simulations and measurements show two linear polarisations with an isolation of more than 30 dB within the band 2.5-2.7 GHz. A return loss of -10 dB is achieved within the above-mentioned bandwidth for the proposed antenna. The radiation pattern for the antenna is similar to that of a conventional microstrip antenna and the measured cross-polar level is 16.5 dB below the peak co-polar level within the band 2.5-2.7 GHz     

0.18 /spl mu/m CMOS dual-band UWB LNA with interference rejection

A CMOS dual-band ultra-wideband low noise amplifier (LNA) with interference rejection is presented. The proposed LNA employs a current reuse structure to reduce power consumption and an active notch filter to produce in-band rejection in the 5 GHz WLAN frequency band. The load tank of the current reuse stage is optimised to provide an additional out-band attenuation in the 2.4 GHz WLAN band. Measurement shows a peak gain of 19.7 dB in the low band (3-5 GHz) and 20.3 dB in the high band (6-10 GHz), while the in-band and out-band maximum rejections are 19.6 and 12.8 dB, respectively.     

40 GHz Vertical Transition with a Dual‐Mode Cavity for a Low‐Temperature Co‐fired Ceramic Transceiver Module

A new vertical transition between a substrate integrated waveguide in a low‐temperature co‐fired ceramic substrate and an air‐filled standard waveguide is proposed in this paper. A rectangular cavity resonator with closely spaced metallic vias is designed to connect the substrate integrated waveguide to the standard air‐filled waveguide. Physical characteristics of an air‐filled WR‐22 to WR‐22 transition are compared with those of the proposed transition. Simulation and experiment demonstrate that the proposed transition shows a ?1.3 dB insertion loss and 6.2 GHz bandwidth with a 10 dB return loss for the back‐to‐back module. A 40 GHz low‐temperature co‐fired ceramic module with the proposed vertical transition is also implemented. The implemented module is very compact, measuring 57 mm × 28 mm × 3.3 mm.     

A new wide-band planar balun on a single-layer PCB

A new wide-band microstrip balun implemented on a single-layer printed circuit board (PCB) is presented in this letter. The proposed planar balun consists of a wide-band Wilkinson power divider and a noncoupled-line broad-band 180/spl deg/ phase shifter. To demonstrate the design methodology, one prototype is realized. The new design was simulated and validated by the measurement. Measured results show that 10-dB return loss of the unbalanced port has been achieved across the bandwidth from 1.7 GHz to 3.3 GHz, or 64%. Within the operation band, the measured return losses for both the two balanced ports are better than -10 dB, and the balanced ports isolation is below -1.5 dB. The measured amplitude and phase imbalance between the two balanced ports are within 0.3 dB and /spl plusmn/5/spl deg/, respectively, over the operating frequency band.