Basic study of single crystal fibers of Pr:Lu3Al5O12 scintillator for gamma-ray imaging applications

Single-crystalline fibers were grown from 0.25, 0.70, and 1.50 mol% Pr-doped Lu₃Al₅O₁₂ (LuAG) melts by the micro-pulling down (μ-PD) method with a diameter of 0.3-0.5 mm and a length of about 200 mm. They were cut to 10 mm long specimens, and their scintillation properties, including light yield and decay time profile, were examined. These results were compared with corresponding properties of the specimens (0.8×0.8×10 mm³) cut from the bulk crystals produced by conventional Czochralski (CZ) growth. The μ-PD-grown fibers demonstrated relatively low light yield and had the same decay time constant when compared with those of the samples cut from the CZ-grown crystals. The fiber crystals were used to assemble scintillating arrays with dimensions of Ø 0.5×10 mm²×20 pixels and Ø 0.3×10 mm²×30 pixels coated by a BaSO₄ reflector. After optical coupling with a position sensitive photomultiplier tube, the fiber-based arrays demonstrated acceptable imaging capability with a spatial resolution of about 0.5 mm.     

Flame aerosol deposition and annealing of Y3Al5O12:Tb phosphor coatings

Sub-micrometer-sized powders of Y₃Al₅O₁₂:Tb phosphor (d_SEM = 320 nm) were prepared by flame-assisted spray pyrolysis of aqueous precursors in a premixed propane/air flame and in situ deposited onto quartz substrates. Phosphor screens with densities of up to 0.7 mg cm⁻² could be produced within 20 min. As-deposited coatings were amorphous and required a thermal post-treatment. After annealing in an oven for 2 h (T ≥ 900 °C), the yttrium aluminum garnet phase (YAG:Tb) was obtained. Alternatively, the phosphor coatings were treated by an impinging flame in the same setup used for the deposition. Quasi-amorphous Y₃Al₅O₁₂:Tb coatings demonstrated bright green photoluminescence upon flame annealing at T ≈ 1100 °C for just several minutes and could outperform YAG:Tb when excited in the wavelength ranges 205–220 nm and 230–260 nm. For example, brightness of emission from the quasi-amorphous coatings was up to five times higher than that of the fully crystalline YAG:Tb phosphor at a technically important wavelength of 254 nm.     

Time-resolved spectroscopy of intrinsic luminescence of Y3Ga5O12 and (LaLu)3Lu2Ga3O12 single crystals

The nature of intrinsic luminescence of Y₃Ga₅O₁₂ (YGG) and (LaLu)₃Lu₂Ga₃O₁₂ (LLGG) single crystals grown from a melt was determined. In the case of a YGG single crystal containing Y_Ga antisite defects with a concentration of 0.25–0.275 at.% the intrinsic luminescence was considered as a superposition of luminescence of self-trapped excitons (STE), luminescence of excitons localized near antisite defects (LE(AD) centers) and luminescence caused by a recombination of an electron with a hole captured at Y_Ga antisite defects. Due to a large (2–3%) concentration of Lu_La antisite defects in LLGG single crystals the intrinsic luminescence was a superposition mainly of the LE(AD) center emission and the recombination luminescence of Lu_La antisite defects. The energy structure of the mentioned centers in YGG and LGGG hosts was determined from the excitation spectra of their luminescence under excitation by synchrotron radiation in the range of the fundamental absorption edge of these garnets.     

纳米Fe3O4及Fe3O4-SrFe12O19吸波复合材料的制备及性能

采用共沉淀法成功制备出具有超顺磁性的纳米Fe₃O₄, 并将Fe₃O₄与SrFe₁₂O₁₉复合制成复合吸波材料Fe₃O₄-SrFe₁₂O₁₉, 利用X射线衍射仪(XRD)、透射电镜(TEM)、振动样品磁强计(VSM)和矢量网络分析仪(PNA)对产物的物相、显微结构、磁性能和吸波性能进行了表征与分析。结果表明, 当Fe₃O₄与SrFe₁₂O₁₉质量比为1∶0.3时, Fe₃O₄-SrFe₁₂O₁₉饱和磁化强度为11.1 emu·g^-1, 矫顽力0.86 Oe, 剩余磁化强度0.08 emu·g^-1, 其吸波性能最佳, 最大吸收峰值为-17.7 dB,-5 dB频宽为1.3 GHz, 较Fe₃O₄和 SrFe₁₂O₁₉的最大吸收峰值分别提高247%和185%, 频带分别拓宽1.12 GHz和0.40 GHz。     

Elastic modulus and hardness of CaTiO3, CaCu3Ti4O12 and CaTiO3/CaCu3Ti4O12 mixture

Three ceramic systems, CaTiO₃ (CTO), CaCu₃Ti₄O₁₂ (CCTO) and intermediate nonstoichiometric CaTiO₃/CaCu₃Ti₄O₁₂ mixtures (CTO.CCTO), were investigated and characterized. The ceramics were sintered at 1100 °C for 180 min. The surface morphology and structures were investigated by XRD and SEM. Elastic modulus and hardness of the surfaces were studied by instrumented indentation. It was observed that CCTO presented the higher mechanical properties (E = 256 GPa, hardness = 10.6 GPa), while CTO/CCTO mixture showed intermediate properties between CTO and CCTO.     

Preparation and dielectric properties of BaCu(B2O5)-doped SrTiO3-based ceramics for energy storage

BaCu(B₂O₅) (BCB) was used as sintering aids to lower the sintering temperature of multi-ions doped SrTiO₃ ceramics effectively from 1300 °C to 1075 °C by conventional solid state method. The effect of BCB content on crystalline structures, microstructures and properties of the ceramics was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and dielectric measurements, respectively. The addition of BCB enhanced the breakdown strength (BDS) while did not sacrifice the dielectric constant. The enhancement of BDS should be due to the modification of microstructures, i.e., smaller and more homogeneous grain sizes after BCB addition. The dielectric constant of BCB-doped ceramics maintained a stable value with 1.0 mol% BCB, which was dominated by the combination of two opposite effects caused by the presence of second phases and the incorporation of Cu²⁺ and Ba²⁺, while further increase was owing to the increase of dissolved Ba²⁺ ions when the content of BCB is more than 2.0 mol%. The multi-ions doped SrTiO₃ ceramics with 1.0 mol% BCB addition showed optimal dielectric properties as follows: dielectric constant of 311.37, average breakdown strength of 28.78 kV/mm, discharged energy density of 1.05 J/cm³ and energy efficiency of 98.83%.     

Influence of Ga2O3 addition on transparent conductive oxide films of In2O3-ZnO

Influence of incorporation of Ga in amorphous In-Zn-O transparent conductive oxide films was investigated as a function of Zn/(Zn + In). For In-Zn-O films with no Ga₂O₃, the range of Zn/(Zn + In) ratio where the amorphous phase appears became narrow at a substrate temperature of 250 °C. With increasing Ga₂O₃ quantity, amorphous films were obtained even at a high substrate temperature of 250 °C in a wider range of Zn/(Zn + In) than that of In-Zn-O films with no Ga₂O₃. This means that the trend of crystallization at higher substrate temperature was disturbed with additional Ga incorporation. For the film deposited from ZnO:Ga (Ga₂O₃: 4.5-7.5 wt%) and In₂O₃ targets, we obtained a resistivity of 2.8 × 10⁻⁴ Ω cm, nearly the same value as that for an In-Zn-O film with no Ga₂O₃. The addition of more than 7.5 wt% Ga₂O₃ induced a widening of the optical band gap.     

The effect of Sb2O5 additions on the dielectric properties of Ag(Nb0.8Ta0.2)O3 ceramics

The sintering behavior and dielectric properties for perovskite Ag(Nb_0.8Ta_0.2)O₃ ceramic with Sb₂O₅ doping was explored. A small amount of Sb₂O₅ (2.5 wt.%) led to high densification at temperatures < 1060 °C. The dielectric constant increased and the temperature coefficient decreased with increasing concentration of Sb₂O₅, and the dielectric constant reached 673, combined with a low temperature coefficient of 147 ppm/°C, and dielectric loss of 0.0044 (at 1 MHz) for the sample with 3.5 wt.% Sb₂O₅ sintered at 1080 °C.     

Thermo-optic properties of TiO2, Ta2O5 and Al2O3 thin films for integrated optics on silicon

The direct measurement of the thermo-optic coefficients of aluminium oxide, tantalum pentoxide and titanium dioxide thin films is presented. Using ellipsometry on monolithically integrated permutations of the layers of silicon, silicon dioxide and the material under test, allows the direct measurement of the overall thermo-optic coefficient accounting for thermally induced changes in the dielectric permittivity and density of the materials as well as the elasto-optic effect due to the non-matching thermal expansion coefficients of the different materials.     

Structural and spectroscopic characterization of Yb doped Lu2O3 transparent ceramics

Yb³⁺ doped Lu₂O₃ transparent ceramics were fabricated by the solid-state reaction method and sintered in H₂ atmosphere. Structural and spectroscopic properties of Yb:Lu₂O₃ ceramics were studied. The Yb:Lu₂O₃ ceramic structure, and the lattice parameter are refined with the Rietveld method. Yb:Lu₂O₃ has broad absorption and emission bands with a long fluorescence lifetime (1.31 ms). The energy level diagram is calculated based on the absorption and emission spectra, Yb³⁺ in Lu₂O₃ ceramics exhibits a big splitting energy of the ²F_7/2 ground state (1023 cm⁻¹). Furthermore, the gain cross-section (σ_g) is estimated with different β values.     

Effects of ZnNb2O6 addition on BaTiO3 ceramics for energy storage

BaTiO₃ ceramics were prepared using solid state reaction with addition of ZnNb₂O₆, to investigate the effects of ZnNb₂O₆ addition on structure and properties. The results show that the ZnNb₂O₆ addition lowers sintering temperature, decreases grain size, while introduces second phase (Ba₂Ti₅O₁₂) for x ≥ 7.26 wt%. The dielectric breakdown strength is enhanced with the increasing doping level of ZnNb₂O₆ and reaches a maximum value at x = 7.26 wt%, exhibiting a maximum energy storage capability.     

Abnormal dielectric behaviors in Mn-doped CaCu3Ti4O12 ceramics and their response mechanism

Mn-doped CaCu₃Ti₄O₁₂ (CCTO) polycrystalline ceramics have been prepared by the conventional solid state sintering. Our results indicate that 10% Mn doping can decrease the dielectric permittivity in CaCu₃Ti₄O₁₂ by about 2 orders of magnitude (from 10⁴ to 10²). The grain and grain boundary activation energies show an obvious increase from 0.054 eV to 0.256 eV, and decrease from 0.724 eV to 0.258 eV with increasing the Mn doping concentration, respectively, which may be caused by the variation of Cu and Ti valence states in the CCTO samples evidenced by the X-ray absorption spectra. The similar grain and grain boundary activation energies result in invalidation of the internal boundary layer capacitance effect for the 10% Mn-doped CCTO sample, and thus result in the dramatic decrease of dielectric permittivity.     

Synthesis of a novel langanite-type compound La3Al5.5Nb0.5O14 by the sol-gel process

Langanite (La₃Ga_5.5Nb_0.5O₁₄, LGN) and its isomorphs are a few piezoelectric materials which have the unique temperature compensation and piezoelectric properties. But the high Ga₂O₃ content makes them very expensive and limits their applications. We reported a new langanite-type compound La₃Al_5.5Nb_0.5O₁₄ (LAN) which has the advantage of no Ga₂O₃ content. Chemically homogeneous La₃Al_5.5Nb_0.5O₁₄ sol was synthesized using La (NO₃)₃·6H₂O, Al (NO₃)₃·9H₂O and niobium citrate as starting materials. Single-phased LAN powder was prepared by decomposition of a citrate polymer precursor and subsequent reactions at high temperatures. TG-DTA, XRD and FTIR were employed to investigate the transformation process of gel to LAN powder. The results showed that, after calcination at 900 °C, pure La₃Al_5.5Nb_0.5O₁₄ polycrystalline powder with a narrow particle size distribution was obtained, which has the same structure with La₃Ga_5.5Nb_0.5O₁₄.     

Synthesis of Nb2O5 nanosheets and its electrochemical measurements

In this study, Nb₂O₅ nanosheets were first synthesized using NbO₂ particles as the precursor via a simple hydrothermal route. The synthesized Nb₂O₅ nanosheets are highly crystalline and their thicknesses are found to be ca. 3–5 nm. Based on the experimental results of XRD, SEM and TEM measurements, a possible mechanism for the formation of nanosheets was discussed. An electrode materials made of the product containing Nb₂O₅ nanosheets shows a larger capacity of 355 mAh g⁻¹ at a current density of 0.1 A g⁻¹. Cyclic measurements indicate that such an electrode exhibits a high reversible charge/discharge capacity and cycling stability. This might be attributed to the intrinsic characteristics of Nb₂O₅ nanosheets.     

Synthesis of CaCu3Ti4O12 ceramic via a sol-gel method

The novel nano-ultrafine powders for the preparation of CaCu₃Ti₄O₁₂ ceramic were prepared by the sol-gel method and citrate auto-ignition method. The obtained precursor powders were pressed, sintered at 1000 °C to fabricate microcrystal CaCu₃Ti₄O₁₂ ceramic. The microcrystalline phase of CaCu₃Ti₄O₁₂ was confirmed by X-ray powder diffraction (XRD). The morphology and size of the grains of the powders and ceramics under different heat treatments were observed using scanning electron microscopy (SEM). The relative dielectric constant of the ceramic sintered at 1000 °C was measured with a magnitude of more than 10⁴ at room temperature, which was approaching to those of Pb-containing complex perovskite ceramics, and the loss tangent was less than 0.20 in a broad frequency region. The relative dielectric constant and loss tangent were also compared with that of CaCu₃Ti₄O₁₂ ceramic prepared by other reported methods.     

Preparation and characterization of Sr4Al2O7:Eu, Eu phosphors

A new composition of red strontium aluminate phosphor (Sr₄Al₂O₇:Eu³⁺, Eu²⁺) is synthesized using a solid state reaction method in air and in a reducing atmosphere. The investigation of firing temperature indicates that a single phase of Sr₄Al₂O₇ is formed when the firing temperature is higher than 1300 °C and that a Sr₃Al₂O₆ phase is formed as the main peak below 1300 °C. The effects of firing temperature and doping concentration on luminescent properties are investigated. Sr₄Al₂O₇ phosphors exhibit the typical red luminescent properties of Eu³⁺ and Eu²⁺. A comparison photoluminescence study with Sr₃Al₂O₆ phosphor shows that Sr₄Al₂O₇ has higher emission intensity than Sr₃Al₂O₆ as a result of the higher optimum doping concentration of Sr₄Al₂O₇ phosphor.     

Variations of microstructures and electrical properties of Bi4Ti3O12/SrTiO3/(La0.5, Sr0.5)CoO3/MgO epitaxial thin films by annealing

Epitaxial thin films of a heterostructure with Bi₄Ti₃O₁₂(BIT)/SrTiO₃(ST) were successfully grown with a bottom electrode consisting of La_0.5Sr_0.5CoO₃(LSCO) on MgO(001) substrates using pulsed laser deposition. The grown BIT and ST (001) planes were parallel to the growth surface with the orientation relationship of BIT <110>//ST <010>. In the as-deposited film, the BIT (001) plane appeared to expand to relieve a lattice mismatch with the ST (001) plane. However, annealing for 20-40 min induced the BIT (001) plane to contract horizontally with its c-axis expanding, which was associated with a local perturbation in the layer stacking of the BIT structure. This structural distortion was reduced in the film annealed for 1 h, with restoration of the periodicity of the layer stacking. Correspondingly, the dielectric constant of the as-deposited film was increased from 292 to 411 by annealing for 1 h. In parallel, the film was paraelectric but became more ferroelectric, with the remanent polarization and the coercive field changing from 0.1 μC/cm² and 14 kV/cm to 1.7 μC/cm² and 69 kV/cm, respectively.     

Pechinin synthesis and luminescence properties of Y3Ga5O12(YGG):Tb thin film

YGG:Tb thin films were successfully prepared by Pechni sol-gel process. The structure, surface morphology, evolution of film crystallization and their luminescent properties were investigated. We find the annealing process is very important to the YGG:Tb film crystallization. Uniform crack-free films can be obtained by conventional annealing for 1 h after rapid thermal treating for 10 min at 800 °C. The excitation and emission spectra of photoluminescence (PL) were used to characterize the luminescent properties. The excitation spectrum of YGG:Tb is dominated by the 4f-4f5d transition of Tb³⁺at 260 nm. The emission peaks of phosphor thin film lie at 488 and 543 nm. It can be used as a promising phosphor material for FED or ELD application.     

Synthesis, structure and exchange bias in Cr2O3/CrO2/Cr2O5 particles

We report on the synthesis, structure and magnetic properties of a novel exchange bias system with Cr₂O₃/CrO₂/Cr₂O₅ interfaces. Chromium oxide particles with mixed chromium valences were prepared by sintering CrO₃ in air. X-ray diffraction patterns show that CrO₃ lost its oxygen gradually with increasing temperature and time through Cr₃O₈, Cr₂O₅, CrO₂, and finally Cr₂O₃ at temperatures above 760 K. X-ray photoelectron spectra indicate a low CrO₂ content and a binding energy of 579.3 eV for Cr 2p_3/2 photoelectrons in Cr₂O₅. Chromium dioxide was found to stably coexist with Cr₂O₃ and Cr₂O₅ in the particles. Magnetic measurements show hysteresis loop shifts in the sample, indicating an exchange bias induced by antiferromagnetic Cr₂O₃/Cr₂O₅ in ferromagnetic CrO₂. An exchange bias of 9 mT at 5 K and a coercivity of 26.3 mT were observed in the chromium oxide particles containing CrO₂.     

Fabrication of porous Al2O3-MgAl2O4 ceramics using combustion-synthesized powders containing in situ produced pore-forming agents

Novel pore-forming agents as well as other starting materials were produced in situ via a solution combustion process and were used to fabricate porous Al₂O₃-MgAl₂O₄ ceramics. The relative fuel-to-oxidant ratios (φ_e) of 1.06, 1.28, 1.49 and 1.70 were achieved by varying the amount of starch in the precursors. Effects of φ_e on the weight percent of the pore-forming agents in the powders, open porosity and Vickers hardness of the as-prepared porous ceramics were investigated. Experimental results revealed that the weight percent of the pore-forming agents in the powders increased significantly_, while porosity of the as-prepared ceramics first increased and then decreased as φ_e rose from 1.06 to 1.70. Meanwhile, pore size distribution became far narrower and the Vickers hardness of the porous ceramics increased as φ_e increased.