Charge State of Indium and Point Defects in Indium-Doped Lead Telluride Crystals

Experimental data on the lattice parameter, thermoelectric power, and microhardness of PbTeIn crystals and the conversion fromp- to n-type with increasing indium content can be interpreted under the assumption that the indium in PbTeIn has variable valence: 2In²⁺ In⁺ + In³⁺. A crystal-quasi-chemical model is proposed for defect formation in PbTeIn: the incorporation of In⁺ into octahedral interstices and In³⁺ into tetrahedral interstices of the close packing of Te atoms, accompanied by In₂Te₃ precipitation.     

废弃氧化铟锡中铟的回收技术综述

废弃氧化铟锡(ITO)的回收利用对我国铟资源的可持续发展与环境保护具有重要意义。本文首先对废弃ITO的回收潜能进行了初步评估;进而系统概述了废弃ITO回收技术的研究进展,回收工艺主要包括湿法与火法,分析比较了现有回收技术的优缺点;在此基础上,指出了当前废弃ITO资源化处理过程中存在的主要问题及相应的解决对策;最后展望了废弃ITO资源化利用未来的研究趋势,开发高效、环境友好型回收工艺是今后重要的研究课题。     

Condensed Cesium Indium Phosphates

In the range 250–400°C, the Cs₂O–In₂O₃–P₂O₅(H₂O) system contains the triphosphate CsInHP₃O₁₀and cyclododecaphosphate Cs₃In₃P₁₂O₃₆. The phase relations in this system are similar to those in the analogous Fe and Ga systems, but the transformation of CsInHP₃O₁₀into Cs₃In₃P₁₂O₃₆is much slower. The monoclinic cell parameters in CsInHP₃O₁₀are a= 12.054 Å, b= 8.936 Å, c= 9.432 Å, = 111.77° (sp. gr. C2/c). The structure of Cs₃In₃P₁₂O₃₆, determined by single-crystal techniques, is cubic (sp. gr. Pa3¯), with a= 14.885 Å.     

Effect of Oxidizers on the Growth of Indium Oxide Films from Indium Acetylacetonate Vapor

The introduction of oxidizers (O₂, N₂O, N₂O + O₂ mixture) into the gas phase (argon) affects the growth rate, composition, and properties of the films prepared via thermal decomposition of indium acetylacetonate, In(acac)₃. N₂O increases the average growth rate of the films by a factor of 3. It was proved by the radical fixation method that N₂O oxidizes In(acac)₃ molecules chemisorbed on the substrate, thus changing the composition and improving the electrical properties of the films.     

ICP-0ES法测定水中铟

ICP—OES法测定水中铟元素,分析过程简单,可以同时分析多个样品、多种元素,在目前的环境监测领域具有很强的适用性[1]。实验采用检出限评定、加标回收率和重复性测试来对分析方法进行确认,实验结果得方法检出限为0．008mggL,加标回收率为94％-103％,测量结果相对标准偏差为2．30％～3．87％,使用标准加入法能够有效消除或补偿样品中的共存元素及基体干扰影响。     

Indium segregation kinetics in InGaAs ternary compounds

A rate equation model is applied to analyze surface segregation in InGaAs and related compounds during the growth of these materials by molecular beam epitaxy (MBE). General trends in segregation are examined as a function of temperature, the V/III ratio and the type of substrate. It is suggested that the principal segregation mechanism is related to a near-equilibrium established between the volatile group III species on the growth surface and in the crystal bulk. In particular, this mechanism results in different manifestations of surface segregation for InGaAs and GaAlAs.     

Indium adsorption and incorporation mechanisms in AlN

Density functional theory calculations are implemented in order to scrutinize indium adsorption and incorporation mechanisms in polar AlN. Indium adsorption is promoted on both polarity surfaces and adatom kinetics calculations indicate lower diffusion barriers of indium along the prismatic 〈11[`2]0 11\bar{2}0 〉 directions on (0001) as well as (000[`1] 000\bar{1} ) AlN. The latter is correlated to experimental observations of In_0.24Al_0.76N grown by metal organic vapour phase epitaxy, demonstrating indium concentration along the facet junctions of V-defects. This can be attributed to In surface diffusion along the 〈11[`2]0 11\bar{2}0 〉 directions of the pyramidal facets. Surface thermodynamics reveal a manifold behaviour of indium in polar AlN surfaces, significantly affected by polarity, growth stoichiometry as well as surface termination. In particular, N-rich growth conditions enhance indium incorporation on Al-terminated surfaces of both polarities, leading up to full monolayer coverage. Incorporation on N-terminated (0001) and (000[`1] 000\bar{1} ) surfaces is hindered independent of growth stoichiometry.     

云南省铟资源的合理开发

介绍了我国金属铟的资源、生产现状、应用及市场情况,论述了云南铟的资源及铟产业现状,对今后铟产业可持续发展提出建议。     

共沉淀法净化铟电解液的研究

对铟电解液的净化方法进行了研究,提出硫酸钡共沉淀的净化方法。研究表明,最佳的净化条件为:以BaCl2为沉淀剂,在适中的搅拌状态下,将BaCl2溶液逐滴滴入经硫酸酸化过的铟电解液中,BaCl2用量控制在每升铟电解液中加入15～30g氯化钡,反应温度控制在30～50℃之间。     

衬底温度对ITO和ITO:Zr薄膜性能的影响

利用双靶共溅法在玻璃衬底上沉积了Zr掺杂ITO薄膜,对比研究了在不同衬底温度下ITO和ITOZr薄膜性能的变化.XRD和AFM分析表明,ITOZr比ITO薄膜具有更好的晶化程度和较低的表面粗糙度,Zr的掺入促进薄膜晶化的同时导致了(222)晶面向(400)晶面取向的转变.室温下Zr的掺杂显著改善了薄膜的光电性能,方阻由260.12 Ω降为91.65Ω,光学透过率也有所上升.随着温度的上升,方阻可达到10 Ω,薄膜也表现出明显的"B-M"效应,通过直接跃迁的模型得出ITOZr比ITO薄膜具有更宽的光学禁带.共溅法制备的ITOZr薄膜比传统的ITO薄膜展现了更好的综合性能.     

铟锡氧化物陶瓷靶的制备

研究了铟锡氧化物(ITO)粉末退火后的组织和结构,比较了不同状态的粉末和制备工艺对ITO靶材的影响.结果表明,纳米ITO粉末在800℃以下具有体心立方In2O3结构,1100℃退火后由In2O3和SnO2两相组成;ITO粉末经过喷雾造粒后,形成了实心球形颗粒并具有合理的颗粒级配,通过气氛烧结可以制备出高密度优良的ITO...     

Oxidation von Indium und eutektischen Indiumlegierungen

Oxidation of Indium and Eutectic Indium Alloys The examination of the oxidation of indium and eutectic InSn- and InBi-alloys is described. The thicknesses of the oxid layers depend on the manufacturing methods of the material investigated: A specimen of an In-bullion and the eutectic foils have a thickness of oxid layers of 10 nm, an In-layer evaporated in a vacuum chamber - only 3 nm. At the surface InO is detected which turns in deeper layers into In₂O₃. By tempering at 250°C for 65 h at air the thickness of the oxide remains constant but its composition is changed. Below the InO there ist probably a mixture of In₂O₃ and In(OH)₃. This mixture turns into In₂O₃ in the depth. The part of the adsorbed oxygen is higher in the tempered specimen. At the surface of InSn48 we determined a mixture of In- and Sn-oxides. During the melting process at air the oxide layer grows up to nearly 25 nm, but remains constant between 10 s and 3 min. InBi34 reacts like In, Bi does not seem to take part in the oxidation.     

Possibilities of Isomorphous Substitutions in Lead Titanate and Lead Zirconate

The extents of iso- and heterovalent substitutions in the ferroelectric compound PbTiO₃and antiferroelectric compound PbZrO₃are analyzed using solubility diagrams. The possibility of predicting the solubility limits in perovskite systems is discussed.     

Lead in glasses

A literature review is given on the structure, crystallization and properties of lead glasses.     

Thermal Conductivity of Liquid Tin and Indium

The present paper reports new measurements of the thermal conductivity of liquid tin and indium. The measurements have been performed at atmospheric pressure in a range of temperatures from 450 to 750 K using a new experimental method based on the principle of the transient hot wire technique. The particular version of the technique employed for molten metals has been shown to have an accuracy in the measurement of the thermal conductivity of molten metals of ±2%. Ultimately, it is intended that the technique operate in a wide range of temperatures, from ambient up to 1200 K, and work is in progress to increase the working temperature and to extend the range of measurements. The results are compared with experimental data reported in the literature by other authors and with predictions of the Wiedemann and Franz law.     

Solidification of Lead Tin and Lead Telluride Eutectic Alloys in Microgravity

The Brazilian Microgravity Program is mainly based on experiments carried out on sounding rockets. A solidification furnace, capable of producing temperatures up to 900 °C, was developed to process metal and semiconductor alloys in microgravity environment. This paper describes a solidification experiment made in this furnace during a parabolic flight, with two eutectic alloys. The behavior of the eutectic alloys PbSn with 26.1 Pb at. % composition, and PbTe with 10.9 Pb at. % composition were presented and compared with laboratory solidifications carried out in the same furnace and thermal cycle. It was concluded that the formation of dendritic structures in PbSn alloy is related to the presence of sedimentation and convective flow during solidification, and the size of these structures is connected to the solidification time. Thus, in the microgravity alloy, there was no formation of dendritic structures and the profile of solute distribution remained constant throughout the sample. For the PbTe eutectic alloy the microgravity conditions have not caused significant changes compared to the earth solidified sample.