Changes in the temperature coefficients of the characteristics of amorphous silicon solar cells subjected to light degradation and recovery

Measuring changes in temperature coefficients is an effective way to estimate the performance of a solar cell. We investigated changes in the temperature coefficients of the I–V characteristics of amorphous silicon (a-Si) solar cells subjected to light degradation and recovery. There is a good correlation between change in the temperature coefficient (Ψ) and the degradation/recovery state of a cell’s conversion efficiency (η). This relationship can be expressed by Ψ_η=−0.0052Δη−0.45. Therefore, the temperature coefficient corresponding to the degradation/recovery state can be estimated.     

Effect of illumination intensity and temperature on the I–V characteristics of n-C/p-Si heterojunction

Krishna et al. (Sol. Energy Mater. Sol. Cells 65 (2001) 163) have recently developed an heterojunction n-C/p-Si in order to achieve low cost and high-efficiency carbon solar cell. It has been shown that for this structure, the maximum quantum efficiency (25%) appears at wavelength λ (600 nm). In this paper, the dependence of I–V characteristics of this heterojunction solar cell on illumination intensity and temperature has been systematically investigated. An estimation of the stability of the solar cell with temperature has been made in terms of the temperature coefficient of I_sc and V_oc. The intensity variation study has been used to estimate the series resistance R_s of the solar cell.The effect of illumination intensity on I–V of n-C/p-Si heterojunction is more complex because the carrier lifetime and the carrier mobility of amorphous carbon are small and also because drift of carriers by built-in electric field plays an important role in these cells. Therefore, the conventional analytical expression for I–V characteristic is not applicable to such solar cells. These structures will not obey the principle of superposition of illuminated and dark current. The experimental results have been analysed by developing empirical relation for I–V.The temperature sensitivity parameters α, the change in I_sc and β, the change in V_oc per degree centigrade have been computed and are found to be 0.087 mA/°C and 1 mV/°C, respectively. This suggests that the heterojunction n-C/p-Si has good temperature tolerance. The value of series resistance has been estimated from the family of I–V curves at various intensities. The R_s is found to be ≈12 Ω, which is on the higher side from the point of view of photovoltaic application.     

Properties of an n-C:P/p-Si carbon-based photovoltaic cell grown by radio frequency plasma-enhanced chemical vapor deposition at room temperature

The phosphorus-doped amorphous carbon (n-C:P) films were grown by radiofrequency (RF) power-assisted plasma-enhanced chemical vapor deposition (PECVD) at room temperature using a solid phosphorus target. The influence of phosphorus doping on the material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, solar cell properties such as series resistance, short-circuit current density, open-circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cells by standard measurement technique. The cells’ performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum open-circuit voltage (V_oc) and short-circuit current density (J_sc) for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively, for the n-C:P/p-Si cell grown at a lower RF power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

GaAs/Ge solar cell AC parameters at different temperatures

The AC parameters of Gallium Arsenide (GaAs/Ge) solar cell were measured at different cell temperatures (198–348 K) by varying the cell bias voltage (forward and reverse) under dark condition using impedance spectroscopy technique. It was found that the cell capacitance increases with the cell temperature where as the cell resistance decreases, at any bias voltage. The measured cell parameters were used to calculate the intrinsic concentration of electron–hole pair, cell material relative permittivity and its band gap energy. The diode factor and the cell dynamic resistance at the corresponding maximum power point decrease with the cell temperature.     

Efficient organic tandem cell combining a solid state dye-sensitized and a vacuum deposited bulk heterojunction solar cell

In this letter, we report on an efficient organic tandem solar cell combining a solid state dye-sensitized with a ZnPc/C₆₀-based, vacuum deposited bulk heterojunction solar cell. Due to an effective serial connection of both subcells and to the complementary absorption of the dyes used, a power conversion efficiency of η_p=(6.0±0.1)% was achieved under simulated AM 1.5 illumination. The device parameters are , and FF=(54±1)%.     

Measurement of silicon and GaAs/Ge solar cell device parameters

The device parameters (carrier lifetime, ideality factor), and physical parameters (built-in voltage, doping concentration) of silicon (Si) and gallium arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. Carrier lifetime is calculated from open circuit voltage decay (OCVD). Built-in voltage and doping concentration are derived from the cell capacitance measured at different bias voltages. Ideality factor is derived from the I–V characteristics of solar cell. Carrier lifetime increases while built-in voltage decreases with increase in temperature. Ideality factor of the solar cell decreases with temperature.     

Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

Temperature characteristics of the open-circuit voltage (V_oc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of V_oc of the InGaP/InGaAs/Ge triple-junction solar cell (dV_oc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.     

Temperature dependence of I-V characteristics and performance parameters of silicon solar cell

The temperature dependence of open-circuit voltage (V_oc) and curve factor (CF) of a silicon solar cell has been investigated in temperature range 295-320 K. The rate of decrease of V_oc with temperature (T) is controlled by the values of the band gap energy (E_g), shunt resistance (R_sh) and their rates of change with T. We have found that R_sh decreases nearly linearly with T and its affect on dV_oc/dT is significant for cells having smaller R_sh values. Series resistance also changes nearly linearly with voltage. CF depends not only on the value of R_s and other parameters but also on the rate of change of R_s with voltage. The rate of decrease of R_s with voltage and T are important to estimate the value of CF and its decrease with temperature accurately.     

Effect of organic salt doping on the performance of single layer bulk heterojunction organic solar cell

The effect of organic salt, tetrabutylammonium hexafluorophosphate (TBAPF₆) doping on the performance of single layer bulk heterojunction organic solar cell with ITO/MEHPPV:PCBM/Al structure was investigated where indium tin oxide (ITO) was used as anode, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEHPPV) as donor, (6,6)-phenyl-C61 butyric acid methyl ester (PCBM) as acceptor and aluminium (Al) as cathode. In contrast to the undoped device, the electric field-treated device doped with TBAPF₆ exhibited better solar cell performance under illumination with a halogen projector lamp at 100 mW/cm². The short circuit current density and the open circuit voltage of the doped device increased from 0.54 μA/cm² to 6.41 μA/cm² and from 0.24 V to 0.50 V, respectively as compared to those of the undoped device. The significant improvement was attributed to the increase of built-in electric field caused by accumulation of ionic species at the active layer/electrode interfaces.     

GaAs/Ge solar cell AC parameters under illumination

The ac parameters of GaAs/Ge solar cell were measured under illumination at different cell temperatures using impedance spectroscopy technique. They are compared with the dark measurements. It is found that the cell capacitance is higher and cell resistance is lower under illumination than in dark for all cell terminal voltages. The cell capacitances at the corresponding maximum power point voltage (terminal) do not vary with temperature where as the cell resistance decreases. The cell capacitance under illumination is estimated from the dark cell capacitance and it is in good agreement with the measured illumination data.     

The evaluation of accelerated test for degradation a stacked a-Si solar cell and EVA films

We studied the photothermal stability of ethylene-vinyl acetate (EVA) laminates using accelerated testing in order to identify the reasons for its performance degradation on stacked amorphous silicon (a-Si) solar cells and EVA films. Stacked a-Si solar cells and EVA films were aged in accelerated tests under conditions of 1-SUN and 4-SUN. The results evaluated the deterioration of each separate level for solar cells made of three-layer stacked structure and EVA films. Spectral sensitivity and conversion efficiency were used as evaluation parameters. Spectral sensitivity could be used as an evaluation parameter after the accelerated test caused degradation on the EVA films. EVA films under 4-SUN accelerated testing revealed a phenomenon in which light transmission increased on the short-wavelength side of the spectrum.     

Fabrication of highly ordered and vertically oriented TiO2 nanotube arrays for ordered heterojunction polymer/inorganic hybrid solar cell

Highly ordered and vertically oriented TiO₂ nanotube arrays with a length of 250 nm and a diameter of 70 nm were prepared by atomic layer deposition (ALD) coupled with anodic aluminum oxide (AAO) template. An ordered heterojunction (OHJ) polymer/inorganic hybrid solar cell was fabricated by successful infiltration of P3HT into the nanotube arrays. Structural features of the nanotube arrays enabling the interdigitated structure of the OHJ were discussed and the performance of the solar cell was characterized to be the power conversion efficiency of 0.50%.     

Measurement of silicon and GaAs/Ge solar cells ac parameters

The ac parameters (cell capacitance and cell resistance) of Silicon (Si) and Gallium Arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. The cell capacitance is calculated from the Open circuit voltage decay (OCVD) and the cell resistance from solar cell I–V characteristics measured under dark condition. It is observed that the solar cell capacitance increases whereas the cell resistance decreases with increase in temperature.     

Annual output estimation of concentrator photovoltaic systems using high-efficiency InGaP/InGaAs/Ge triple-junction solar cells based on experimental solar cell's characteristics and field-test meteorological data

The temperature dependences of the electrical characteristics of InGaP/InGaAs/Ge triple-junction solar cells under concentration were evaluated. For these solar cells, conversion efficiency (η) decreased with increasing temperature, and increased with increasing concentration ratio owing to an increase in open-circuit voltage. The decrease in η with increasing temperature decreases with increasing concentration ratio. Moreover, the annual output of a concentrator system with a high-efficiency triple-junction cell was estimated utilizing the experimental solar cell's characteristics obtained in this study and field-test meteorological data collected for 1 year at the Nara Institute of Science and Technology, and compared with that of a nonconcentration flat-plate system.     

On the sensitivity of open-circuit voltage and fill factor on dangling bond density and Fermi level position in amorphous silicon p–i–n solar cell

A simple method for calculation of current–voltage characteristics of an amorphous silicon solar cell is described in terms of excitation current, J_G, and excitation voltage, V_G, the latter being defined in terms of separation of quasi-Fermi levels. Contrary to the usual method of calculating the short-circuit current and dark current separately and assuming a linear superposition, in the present method the calculations are done first in the open circuit where the neutrality of space charge can be assumed and then the current has been calculated in terms of a gradient in the quasi-Fermi levels. We find that depending on other parameters, the open-circuit voltage is a weak function of dangling bond density except in cases of very large degradation. The sensitivity of open-circuit voltage, V_oc, to light-induced degradation can further be reduced by moving the thermal equilibrium Fermi level above the upper dangling bond level. Fill factor deterioration is found to be mainly due to conductivity modulation and is higher for the lower values of thermal equilibrium Fermi level.     

Development of thin film amorphous silicon oxide/microcrystalline silicon double-junction solar cells and their temperature dependence

We have developed thin film silicon double-junction solar cells by using micromorph structure. Wide bandgap hydrogenated amorphous silicon oxide (a-SiO:H) film was used as an absorber layer of top cell in order to obtain solar cells with high open circuit voltage (V_oc), which are attractive for the use in high temperature environment. All p, i and n layers were deposited on transparent conductive oxide (TCO) coated glass substrate by a 60 MHz-very-high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. The p-i-n-p-i-n double-junction solar cells were fabricated by varying the CO₂ and H₂ flow rate of i top layer in order to obtain the wide bandgap with good quality material, which deposited near the phase boundary between a-SiO:H and hydrogenated microcrystalline silicon oxide (μc-SiO:H), where the high V_oc can be expected. The typical a-SiO:H/μc-Si:H solar cell showed the highest initial cell efficiency of 10.5%. The temperature coefficient (TC) of solar cells indicated that the values of TC for conversion efficiency (η) of the double-junction solar cells were inversely proportional to the initial V_oc, which corresponds to the bandgap of the top cells. The TC for η of typical a-SiO:H/μc-Si:H was −0.32%/ °C, lower than the value of conventional a-Si:H/μc-Si:H solar cell. Both the a-SiO:H/μc-Si:H solar cell and the conventional solar cell showed the same light induced degradation ratio of about 20%. We concluded that the solar cells using wide bandgap a-SiO:H film in the top cells are promising for the use in high temperature regions.     

High-voltage (1.8 V) tandem solar cell system using a GaAs/AlXGa(1−X)As graded solar cell and dye-sensitised solar cells with organic dyes having different absorption spectra

Stacked multijunction (tandem) solar cells have been prepared by mechanically stacking dye-sensitised solar cells (DSCs) and a GaAs/Al_XGa_(1−X)As graded solar cell (GGC) as the top and bottom cells, respectively. Three organic dyes with different absorption spectra (D131, D102 and D205) were used in the DSCs, in order to match the photocurrent density between the DSC and the GGC. Tuning the absorption range of the DSC by choosing an appropriate dye, increased the overall photovoltaic conversion efficiency due to the optimal utilisation of the solar spectrum in the individual cells. The open circuit photovoltages (V_OC) of the GGC and the DSC with D131 were 1.11 V and 0.76 V, respectively, resulting in a V_OC of 1.85 V and a photovoltaic conversion efficiency of 7.63% for the tandem cell. Although the overall conversion efficiency has not exceeded that of the GGC (7.66%), these tandem cells provide adequate V_OC values for water splitting applications.     

Hybrid solar cells based on tetrapod nanocrystals: The effects of compositions and type II heterojunction on hybrid solar cell performance

We synthesized oleic acid capped tetrapod nanocrystals of CdSe, CdTe and type II heterostructured CdTe/CdSe to investigate the effects of nanocrystal compositions and type II heterojunction on the photovoltaic properties of hybrid solar cells. The hybrid solar cell based on the blend of CdSe tetrapod nanocrystals and P3HT with a weight ratio of 6:1 showed the maximum power conversion efficiency of 1.03% under AM 1.5 G condition, and the maximum incident photon to current conversion efficiency of the solar cell was 43% at 415 nm. Although CdTe and CdTe/CdSe tetrapod nanocrystals showed relatively poor performance, the power conversion efficiency and the short circuit current density of the hybrid solar cell based on type II heterostructured CdTe/CdSe tetrapod nanocrystals was 4.4 and 3.9 times higher than that of the solar cell based on CdTe tetrapod nanocrystals, respectively. These results can be explained by the effects of nanocrystal compositions and type II heterojunction on the photovoltaic properties of hybrid solar cells.     

The effect of spectral variations on the performance parameters of single and double junction amorphous silicon solar cells

We present the results of an experimental investigation into the effects of spectral variations in a maritime climate on the performance parameters of single and double junction amorphous silicon solar cells. Such considerations are important for accurate modelling of system performance. It is shown that one can distinguish between two effects: a primary effect that results from variations in the total irradiance in the spectrally useful range of the device, and a secondary (mismatch) effect observed in double junction devices that is related to details of device structure. Results showing the impact on the short-circuit current, the current at the maximum-power-point, the fill factor and the overall efficiency are discussed.     

Deposition and characterization of earth abundant CuZnS ternary thin films by vacuum spray pyrolysis and fabrication of p-CZS/n-AZO heterojunction solar cells

We report fabrication of solar cell device <ITO/AZO/i-ZnO/CZS/Al> with Copper Zinc Sulfide (CZS) thin films as absorber layer. CZS thin films prepared using chemical spray pyrolysis technique at a pressure of 10⁻³ mbar at different substrate temperatures. Structural, morphological, optical, compositional and electrical properties of as prepared films are investigated. Structural analysis shows crystalline nature with mixed phase containing CuS-ZnS binary composite. Atomic Force Microscopy analysis shows the average particle size of 88 nm. Value of work function obtained from ultraviolet photoelectron spectroscopy is 4.58 eV. The band gap of the as-prepared films varies from 1.62 to 2.06 eV. Hall effect measurement proves the p-type nature for all the deposited films. Samples deposited at 350°C shows carrier concentration of 10²¹ cm⁻³ and electrical conductivity of 526 S cm⁻¹. Solar cell device structure of <ITO/AZO/i-ZnO/CZS/Al> has been fabricated using the CZS sample deposited at 350°C. The cell parameters obtained are V_oc = 0.505 V, I_sc = 4.97 mA/cm², FF = 64.28% and η = 1.6 ± 0.05%.