关于分光技术的新设想

本文在对经典迈克尔逊傅里叶干涉光谱仪和静态无动镜双光源傅里叶干涉光谱仪分析讨论的基础上,提出了一种包含上述两种分光技术优点的我技术;静止时间调制傅里叶分光技术。     

采用Wollaston棱镜的空间调制干涉成像光谱仪

空间调制干涉成像光谱仪相对时间调制型干涉成像光谱仪具有稳定性强、实时性好、小型化、费用低等特点,Wollaston棱镜分光系统的参数设计直接关系到光谱仪性能的优劣,针对Wollaston棱镜分光原理展开分析和计算,给出不同材料Wollaston棱镜在不同结构角条件下分束角与波长的关系以及不同波长条件下入射角与棱镜厚度的关系,给出了选择和设计Wollaston分光棱镜的一些原则,为可应用于航天遥感的空间调制干涉成像光谱仪的设计及研制提供理论依据。     

紫外临边成像光谱仪时间同步系统的优化

为了提高紫外临边成像光谱仪的系统在轨时间同步精度,提出了采用参考时钟源计算时钟漂移率的方法。对光谱仪的时间系统工作原理进行了分析,利用光谱仪系统中的1553 B 接口芯片的时标单元作为参考时钟源,获得连续的样本数据,确定了线性拟合计算时钟漂移率,实现对时钟漂移进行动态补偿和光谱仪时间系统优化。给出了基于GPS 时钟源的实时检测方法,采用高速FPGA 芯片设计了时间同步系统;应用仿真测试设备,记录光谱仪时间同步误差的动态变化,实现了动态测量优化后的光谱仪时间同步误差的目的。实验结果表明:优化后的系统实际测量开始时间误差13 ms,不同测量持续时间下的测量结束误差466.8 ms,不同积分时间下的测量结束误差362.5 ms,满足光谱仪数据反演精度时间系统误差512 ms 的要求。     

基于单光子探测器阵列的光谱测量系统

针对目前商用光谱仪无法在极微弱光测量环境下实现光谱探测的问题,提出一种基于单光子探测器阵列的光谱测量系统,利用单光子探测器在极微弱光环境下的探测能力,将虚像相位阵列(VIPA)和反射式衍射光栅构成的二维色散结构与单光子探测器阵列相结合,并通过实验测试得出系统的二维分光效果、相对光谱透射比曲线以及单光子探测性能。实验结果表明:该系统不仅灵敏度高,还实现了0.006 nm的波长分辨率;与目前普遍采用的基于时间相关单光子计数的光谱测量系统相比,该系统具有更优的波长分辨率和更大的测量带宽。     

成像光谱仪“混光”特性分析

成像光谱仪是新型多光谱遥感器，它具有获得地面的更丰富光谱信息的特点。无论采用滤光片分光还是色散元件分光，都不同程度地存在光空间的混杂。文中分析成像光谱仪“混光”特性，提出保障系统光谱特征和空间特性的判据。     

脉冲激光测距中时间间隔测量的新方法

提出脉冲激光测距中时间间隔测量的新方法。传统数字法的测时误差主要是开始和结束2个脉冲周期的计数误差，为此利用FPGA芯片中集成锁相环（PLL）单元产生N路同频且相位均匀分布的时钟脉冲，用N个计数器在这2个周期进行计数，用计数结果均值作为最终结果。这相当于将脉冲周期T细分为N等份，每份相当于1个脉冲，其周期为T／N。实现了在不增加测量时间和盲区的前提下，测量精度提高了N倍，解决了传统脉冲激光测距系统中提高精度、缩短测量时间和盲区的矛盾。     

脉冲激光测距时间间隔测量及误差分析

在脉冲激光测距时间间隔测量系统中，传统的数字时钟计数法受限于计数时钟的频率，测量精度不高。由于模拟插入法具有测量范围大、线性好、测量精度高的优点，广泛应用于脉冲激光测距时间间隔测量系统中。介绍了模拟插入法时间间隔测量的原理，设计了其测量系统及相应的测试电路。利用该系统进行了实验研究，达到了100ps的时间间隔测量精度，对应于1．5cm的测距精度。最后，进行了测量误差分析。     

光子计数成像激光雷达时间间隔测量系统研究

光子计数成像激光雷达需要测量一个激光主波和与之对应的多个回波之间的时间间隔,并具有高精度.采用延迟线插入法时间间隔测量技术,研制了具有27ps分辨率的多脉冲时间间隔测量系统,介绍了系统的软硬件结构及工作流程,测试了精度和线性度等指标,实验结果表明系统精度达到80ps,线性度良好.     

一种Gm-APD阵列型读出电路的设计与实现

提出了一种雪崩光电二极管(APD)阵列读出电路的系统架构。针对2×8盖革模式InGaAs-APD传感器阵列,进行读出电路系统设计,其中的时间数字转换器(TDC)采用游标卡尺二段式结构,将计数分为粗计数与细计数,计数器放置在像素外,整个芯片共用一个计数器,以实现资源共享,减小了芯片面积,降低了系统功耗。全局采用高、低频时钟分别控制计数、传输数据,进一步降低系统功耗。系统采用CSMC 0.5μm CMOS工艺进行流片验证。测试结果表明,该系统的功能与时序正确。     

一种Gm-APD阵列型读出电路的设计与实现

提出了一种雪崩光电二极管(APD)阵列读出电路的系统架构。针对2×8盖革模式InGaAs-APD传感器阵列,进行读出电路系统设计,其中的时间数字转换器(TDC)采用游标卡尺二段式结构,将计数分为粗计数与细计数,计数器放置在像素外,整个芯片共用一个计数器,以实现资源共享,减小了芯片面积,降低了系统功耗。全局采用高、低频时钟分别控制计数、传输数据,进一步降低系统功耗。系统采用CSMC 0.5 μm CMOS工艺进行流片验证。测试结果表明,该系统的功能与时序正确。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.