Synthesis and properties of in situ Si3N4-reinforced BaO·Al2O3·2SiO2 ceramic matrix composites

Silicon nitride (94.5% α, 5.5% β), BaCO₃, Al₂O₃, and SiO₂ powders were mixed and pressureless sintered to produce a ceramic matrix composite consisting of 30 vol% barium aluminosilicate (BaO·Al₂O₃·2SiO₂ or BAS) matrix reinforced with in situ grown whiskers of β-Si3N4. In situ X-ray studies of the reactions indicated that BaCO₃ decomposes first to yield BaO which reacts with SiO₂ to yield a series of barium silicates which then react with Al₂O₃ between 950 and 1300°C to yield hexacelsian BAS. The sintering times were varied in order to develop a material system that combines the favourable properties of BAS with the high strength of Si₃N₄. In situ high-temperature X-ray studies after composite processing did not reveal any changes in the BAS or Si3N4 up to temperatures of 1300°C. Dilatometry studies of the sintered composite indicated a low-temperature transformation between 230 and 260°C with the temperature of transformation and volume change associated with the hexagonal to orthorhombic transformation decreasing with an increase of sintering time. Room- and high-temperature (1400°C) strengths were evaluated using four-point bend flexural tests. Composites exhibited near theoretical densities and an increase in flexural strength that was primarily dependent on the higher α- to β-Si₃N₄ transformation. This revised version was published online in November 2006 with corrections to the Cover Date.     

Si3N4-ZrO2 composites with small Al2O3 and Y2O3 additions prepared by HIP

Si₃N₄-ZrO₂ composites have been prepared by hot isostatic pressing at 1550 and 1750 °C, using both unstabilized ZrO₂ and ZrO₂ stabilized with 3 mol% Y₂O₃. The composites were formed with a zirconia addition of 0, 5, 10, 15 and 20 wt%, with respect to the silicon nitride, together with 0–4 wt% Al₂O₃ and 0–6 wt% Y₂O₃. Composites prepared at 1550 °C contained substantial amounts of unreacted -Si₃N₄, and full density was achieved only when 1 wt% Al₂O₃ or 4 wt % Y₂O₃ had been added. These materials were generally harder and more brittle than those densified at the higher temperature. When the ZrO₂ starting powder was stabilized by Y₂O₃, fully dense Si₃N₄-ZrO₂ composites could be prepared at 1750 °C even without other oxide additives. Densification at 1750 °C resulted in the highest fracture toughness values. Several groups of materials densified at 1750 °C showed a good combination of Vickers hardness (HV10) and indentation fracture toughness; around 1450 kg mm^–2 and 4.5 MPam^1/2, respectively. Examples of such materials were either Si₃N₄ formed with an addition of 2–6 wt% Y₂O₃ or Si₃N₄-ZrO₂ composites with a simultaneous addition of 2–6 wt%Y₂O₃ and 2–4 wt% Al₂O₃.     

Effect of TiO2 addition on oxidation behavior of sintered bodies composed of Si3N4-Y2O3-Al2O3-AlN

The effect of TiO₂ content on the oxidation of sintered bodies from the conventional Si₃N₄-Y₂O₃-Al₂O₃-AlN system was investigated. Sintered specimens composed of Si₃N₄, Y₂O₃, Al₂O₃, and AlN, with a ratio of 100 : 5 : 3 : 3 wt% and containing TiO₂ in the range of 0 to 5 wt% to Si₃N₄, were fabricated at 1775 °C for 4 h at 0.5 MPa of N₂. Oxidation at 1200 to 1400 °C for a maximum of 100 h was performed in atmospheres of dry and wet air flows. The relation between weight gain and oxidation time was confirmed to obey the parabolic law. The activation energies decreased with TiO₂ content. In the phases present in the specimens oxidized at 1300 °C for 100 h in dry air, Y₃Al₅O₁₂ and TiN, which had existed before oxidation, disappeared. Alpha-cristobalite and Y₂O₃·2TiO₂ (Y2T) appeared in their place and increased with increasing TiO₂ content. In those oxidized at 1400 °C, -cristobalite was dominant and very small amounts of Y₂O₃·2SiO₂ and Y2T were contained. There was a tendency for more -cristobalite to form in oxidation in wet air than in dry air. Therefore, moisture was confirmed to affect the crystallization of SiO₂ formed during oxidation. Judging from the lower activation energy, the crystallization, and the pores formation, we concluded that the addition of TiO₂ decreases oxidation resistance.     

Direct bonding of Cu to oxidized silicon nitride by wetting of molten Cu and Cu(O)

When pressureless sintered silicon nitride with the main additives Y₂O₃ and Al₂O₃, having a thermal conductivity K = 20 W/m K, was oxidized at 1240–1360 °C in still air, the resulting surface oxide layer easily bonded to a copper plate in the temperature region between 1065 and 1083 °C, and in the oxygen concentration range of 0.008–0.39 wt%, as shown in a Cu–O phase diagram. The oxide on the silicon nitride was characterized as Y₂O₃·2SiO₂ and mixed silicate glass with additives and impurities that diffused through the grain boundary. The bonding strength of Cu/Si₃N₄ depends on the amount or layer thickness of silicate glass and reaches as high as 100 MPa by shear at room temperature. Detailed analysis of the oxidation layer and the peeled-off surfaces of directly bonded Si₃N₄/Cu reveal that the main mechanism of bonding is wetting to glassy silicate phase by mixtures of molten Cu and α-solid solution Cu(O), which solidify to α + Cu₂O below 1065 °C by a eutectic reaction. The direct reactive wetting of molten Cu, supplied from the grain boundary of a Cu plate, on the glassy phase enables very tight chemical bonding via oxygen atoms.     

Effect of oxide addition on the sintering and high-temperature strength of Si3N4 containing Y2O3

The effect of oxide addition on the sintering behaviour and high-temperature strength of Si₃N₄ containing Y₂O₃ was studied at 0.1 to 30 MPa N₂ at 1600 to 2000° C. The addition of oxide, i.e. MgO, Al₂O₃, La₂O₃, or Nd₂O₃, was found to lower the densification temperature and increase the densification rate. The addition of Al₂O₃ or MgO reduced the strength of sintered materials at >1350° C. The addition of La₂O₃ or Nd₂O₃, on the other hand, did not affect high-temperature strength which remained equivalent to that of the material containing only Y₂O₃. These results indicate that the glassy phases in these systems are as refractory as that in the Si₃N₄-Y₂O₃.     

Dielectric properties in GHz range of porous Si3N4–BN–SiO2 ceramics with considerable flexural strength prepared by low temperature sintering in air

Abstract

Porous Si₃N₄–BN–SiO₂ ceramics with ultimate apparent porosities between 0·140 and 0·799 were fabricated in air at 1100°C by partial sintering using core starch as both consolidator and pore former in the green bodies. The pores were derived from burning off the starch, the partial oxidation of silicon nitride and the stack of particles of the start materials. Effect of retaining time on the microstructure of sintering bodies was analysed by SEM analysis. Reference intensity ratio (RIR) technique based on the X-ray diffractometry results demonstrated the phase components content of sintered bodies. Influence of porosity on the flexural strength of porous Si₃N₄–BN–SiO₂ ceramics was investigated. The ceramic with a porosity of 0·140 attained a maximal flexural strength of 60±4·11 MPa. In addition, the dielectric constants and loss tangents were presented for porous Si₃N₄–BN–SiO₂ triphase ceramics in the frequency range of 18–40 GHz, and the real part of dielectric constant of the materials reached as low as 2·67 at the porosity of 0·732 at a frequency of 20 GHz.     

Preparation and mechanical properties of self-reinforced in situ Si3N4 composite with La2O3 and Y2O3 additives

Self-reinforced in situ Si₃N₄ composite material was prepared with high amount of La₂O₃ and Y₂O₃ additives by two-step hot pressing, and the optimum amount of additives was determined. The volume fraction of boundary glass phase was calculated based on the equilibrium of equivalent number in chemical reaction. For material with 15 mol% additives, flexural strength and fracture toughness at room temperature were 960 MPa and 12.3 MPa m^1/2, respectively. At temperature of 1350°C, flexural strength was maintained to 720 MPa and fracture toughness was significantly increased to 23.9 MPa m^1/2 because of the high refractory of oxynitride glass containing compositions of La and Y. Self-reinforced mechanism was mainly responsible for crack deflection along the elongated β-Si₃N₄ grains.     

Evaluation of Si3N4 joints: bond strength and microstructure

Joining of pressurelessly sintered silicon nitride ceramics was carried out using adhesive slurries in the system Y-Si-Al-O-N in a nitriding atmosphere. The effects of bonding parameters, such as joining temperature (1450–1650°C), applied pressure (0– MPa) and holding time (10–60 min), on the bond strength of joint were evaluated. A typical microstructure of the joint bonded with the optimum adhesive was investigated. The three point bend testing of joined samples with 3 × 4 × 36 mm³ in dimension was employed to study the bond strength of joints. The results show that an optimum joining process was achieved by holding at 1600°C for 30 min under an external pressure of 5 MPa and the maximum bond strength was 550 MPa, compared to 700 MPa of unbonded Si₃N₄ ceramic, using the adhesive having the Si₃N₄/(Y₂O₃ + SiO₂ + Al₂O₃) ratio of 0.39. The good bond strength is attributed to the similarity in microstructure and chemical composition between joint zone and ceramic substrate. The fracture modes were classified into two types according to the values of bond strength. This revised version was published online in September 2006 with corrections to the Cover Date.     

Oxidation of sintered silicon nitride

The influence of oxidation at 1200 °C in air for up to 1000 h on the mechanical properties of two Si₃N₄-Y₂O₃-Al₂O₃ materials with different Y₂O₃/Al₂O₃ ratios, Material A (Si₃N₄-13.9 wt% Y₂O₃-4.5 wt% Al₂O₃) and Material B (Si₃N₄-6.0 wt% Y₂O₃-12.4 wt% Al₂O₃), was investigated. The oxidation significantly improves the high-temperature strength and fracture toughness of both materials, but more for Material A. After oxidation, Material A at 1300 °C retains 93% of its room-temperature strength and 87% higher than that before the oxidation. The oxidation has a different effect on the room-temperature K _IC for the two materials. The room-temperature Weibull modulus of Material A decreased by more than half while the 1200 °C Weibull modulus decreased slightly after oxidation. The annealing treatment prior to oxidation had no effect on the high-temperature strengths of the materials after oxidation. The effect of oxidation on mechanical properties is discussed in terms of the microstructure change of the materials.     

Fracture mechanisms in a stoichiometric 3Al2O32SiO2 mullite

The mechanical behaviour from room temperature up to 1400°C (strength, toughness, Young’s modulus) of a 3Al₂O₃·2SiO₂ dense mullite material containing 0.2 wt% alkali has been studied. Microstructure has been characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Toughness, bend strength and static Young’s modulus have been determined from room temperature up to 1400°C. The influence of strain rate on fracture behaviour has been investigated and a correlation of the mechanical parameters to fractographic observations by SEM has been stated. A strong influence of loading rate on microstructural modifications during fracture at 1300°C has been found. This revised version was published online in November 2006 with corrections to the Cover Date.     

Preparation and properties evaluation of zirconia-based/Al2O3 composites as electrolytes for solid oxide fuel cell systems

Yttria-doped zirconia powders containing 3 to 8 mol% Y₂O₃ and 0 to 20 wt% Al₂O₃ were prepared by both mixing commercial oxides and a coprecipitation method, and the mechanical and electrical properties have been examined as a function of the Al₂O₃ content. The bending strength of the composite at room temperature increased with increasing Al₂O₃ content. In the temperature range 500–1000 °C the bending strength increased with Al₂O₃ content up to 10 wt% and then decreased, the measured value at 1000 °C (200 MPa) being higher than those at lower temperatures for cubic zirconia materials. Fracture toughness (K_IC) decreased with increasing Y₂O₃ content in the Al₂O₃-free zirconia materials. Al₂O₃ additions enhanced the fracture toughness and this was maximum (7 MPa m^1/2) for the composite ZrO₂-3 mol% Y₂O₃/10 wt% Al₂O₃. The electrical conductivity of cubic ZrO₂/Al₂O₃ composites decreased monotonically with Al₂O₃ content, but in tetragonal ZrO₂/Al₂O₃ composites hardly varied or apparently increased up to 10 wt% Al₂O₃. At 1000 °C the highest electrical conductivity was 0.30 S cm^–1 for ZrO₂-8 mol% Y₂O₃, and this decreased up to 0.10 S cm^–1 for the composite ZrO₂-8mol% Y₂O₃/20 wt% Al₂O₃.     

Phase relationships in the system Si3N4-Y2O3-SiO2

Examination of compositions in the system Si₃N₄-Y₂O₃-SiO₂ using sintered samples revealed the existence of two regions of melting and three silicon yttrium oxynitride phases. The regions of melting occur at 1600° C at high SiO₂ concentrations (13 mol% Si₃N₄ + 19 mol% Y₂O₃ + 68 mol% SiO₂) and at 1650° C at high Y₂O₃ concentrations (25 mol % Si₃N₄ + 75 mol % Y₂O₃). Two ternary phases 4Y₂O₃ ·SiO₂ ·Si₃N₄ and 10Y₂O₃ ·9SiO₂ ·Si₃N₄ and one binary phase Si₃N₄ ·Y₂O₃ were observed. The 4Y₂O₃ ·SiO₂ ·Si₃N₄ phase has a monoclinic structure (a= 11.038 Å, b=10.076 Å, c=7.552 Å, =108° 40) and appears to be isostructural with silicates of the wohlerite cuspidine series. The 10Y₂O₃ ·9SiO₂ ·Si₃N₄ phase has a hexagonal unit cell (a=7.598 Å c=4.908 Å). Features of the Si₃N₄-Y₂O₃-SiO₂ systems are discussed in terms of the role of Y₂O₃ in the hot-pressing of Si₃N₄, and it is suggested that Y₂O₃ promotes a liquid-phase sintering process which incorporates dissolution and precipitation of Si₃N₄ at the solid-liquid interface.Visiting Research Associate at Aerospace Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433, under Contract No. F33615-73-C-4155 when this work was carried out.     

Mechanical properties of bovine hydroxyapatite (BHA) composites doped with SiO<Subscript>2</Subscript>, MgO,Al<Subscript>2</Subscript>O<Subscript>3</Subscript>, and ZrO<Subscript>2</Subscript>

Biologically derived hydroxyapatite from calcinated (at 850 °C) bovine bones (BHA) was doped with 5 wt% and 10 wt% of SiO₂, MgO, Al₂O₃ and ZrO₂ (stabilized with 8% Y₂O₃). The aim was to improve the sintering ability and the mechanical properties (compression strength and hardness) of the resultant BHA-composites. Cylindrical samples were sintered at several temperatures between 1,000 and 1,300 °C for 4 h in air. The experimental results showed that sintering generally occurs at 1,200 °C. The BHA–MgO composites showed the best sintering performance. In the BHA–SiO₂ composites, extended formation of glassy phase occurred at 1,300 °C, resulting in structural degradation of the resultant samples. No sound reinforcement was achieved in the case of doping with Al₂O₃ and zirconia probably due to the big gap between the optimum sintering temperatures of BHA and these two oxides.     

Microstructure of sol–gel synthesized Al2O3–ZrO2(Y2O3) nano-composites studied by transmission electron microscopy

The Al₂O₃–ZrO₂(Y₂O₃) composite powder was synthesized through a sol–gel process using aluminum sec-butoxide and zirconium butoxide as precursors. The as-received powders in an amorphous phase were crystallized with c-ZrO₂ at around 980 °C. As the calcination temperature increased, the c-ZrO₂ crystalline phase was transformed to t-ZrO₂ at about 1200 °C. However, the Al₂O₃ phase in the Al₂O₃–ZrO₂(Y₂O₃) composite powders still existed in an amorphous phase up to 1050 °C. In the sintered body using the calcined powders at 400 °C, the Al₂O₃ phase was crystallized in an α-phase at 1200 °C during the sintering for 2 h. Using the sol–gel Al₂O₃–ZrO₂(Y₂O₃) powder, a typical nano-composite having a nano-crystalline phase (less than 20 nm) can be successfully obtained by a pressureless-sintering process even at 1200 °C for 2 h.Using the sol–gel Al₂O₃–ZrO₂(Y₂O₃) powder, a typical nano-composite having a nano-crystalline phase (less than 20 nm) can be successfully obtained by a pressureless-sintering process even at 1200 °C for 2 h. The values of relative density and Vickers hardness were comparatively high value with about 96.2% and 1100 Hv, respectively, even though it was made at low temperature. In the composite sintered at 1400 °C, the hardness value was saturated with 1570 Hv and the values of fracture toughness were almost same with about 6 MPa m^1/2.     

Effect of grain-boundary crystallization on the high-temperature strength of silicon nitride

Si₃N₄ specimens having the composition 88.7 wt% Si₃N₄-4.9wt% SiO₂-6.4wt% Y₂O₃ (85.1 mol% Si₃N₄-11.1 mol% SiO₂-3.8mol% Y₂O₃) were sintered at 2140° C under 25 atm N₂ for 1 h and then subjected to a 5 h anneal at 1500° C. Crystallization of an amorphous grainboundary phase resulted in the formation of Y₂Si₂O₇. The short-time 1370° C strength of this material was compared with that of material of the same composition having no annealing treatment. No change in strength was noted. This is attributed to the refractory nature of the yttrium-rich grain-boundary phase (apparently identical in both glassy and crystalline phases) and the subsequent domination of the failure process by common processing flaws.Chemical analysis of the medium indicated 5.25 wt% O₂, 0.46 wt% C, 0.8 wt% Al, and expressed in p.p.m. 670 Ca, 30 Cu, 2000 Fe, <2 Ti, 370 Cr, 130 Mg, 90 Mn, <10 V, <20 Zr, 2000 Mo, 240 Ni, 130 Zn, <30 Pb, <60 Sn.     

Synthesis of hexagonal plate-like Al4Si2C5 and the effect of Al4Si2C5 addition to Al2O3–C refractory

Hexagonal plate-like Al₄Si₂C₅ particles were synthesized for the first time via a carbothermal reduction process with controlled heating temperature and raw materials ratio, and their oxidation behavior was investigated. Al₄O₄C, Al₂OC, SiC and Al₄SiC₄ formed as intermediate products when the batch mixture was heated in argon atmosphere, and Al₄Si₂C₅ then formed at above 1800 °C. Possible reaction mechanisms responsible for the formation of this ternary carbide were discussed based on the reactions at the initial and later stages of the carbothermal reduction process. Al₄Si₂C₅ added to the Al₂O₃–C refractory initially reacts with CO to form Al₂O₃, SiO₂ and C. After the reaction, Al₂O₃ react with SiO₂ to form mullite on the surfaces of the refractories, which inhibit the oxidation of the refractories.     

High Temperature Construction Materials on the Basis of Nanodisperse Silicon Nitride

Si₃N₄‐Al₂O₃‐Y₂O₃, Si₃N₄‐TiN and Si₃N₄‐AIN‐Al₂O₃‐Y₂O₃ (β‐sialon) nanopowders with the specific surface area of 60–70 m²/g and average particle size of 30–50 nm have been prepared by plasmachemical synthesis. By means of the hot pressing method at 1850°C compact materials with fine‐grained structure were prepared from this powders as well as from mixture of Si₃N₄‐Al₂O₃‐Y₂O₃ with the second phase (10 wt.% SiC‐Si₃N₄, ZrO₂, TiN nanopowder). Addition of the second phase to silicon nitride improves material strength.     

Properties of porous Si3N4 ceramic electromagnetic wave transparent materials prepared by technique combining freeze drying and oxidation sintering

A simple and low-cost technique combining freeze drying and oxidation sintering is explored to prepare Si₃N₄ ceramics with high porosity and complex shape. The effects of sintering temperature and time on the phase composition, microstructure, porosity, pore size and dielectric constant of the porous Si₃N₄ ceramics are studied. Due to the variations of phase composition and microstructure, the porous Si₃N₄ ceramics sintered at different temperature possess characteristic in flexural strength. The porous Si₃N₄ ceramics sintered at 1,300 °C for 2–3 h have the highest flexural strength of 71–74 MPa. The changes of porosity and composition have much effect on the dielectric constant of porous Si₃N₄ ceramics. Because of the high porosity and SiO₂ volume fraction, the porous Si₃N₄ ceramics sintered at 1,300 °C for 2–3 h possess low dielectric constant of 3.4–3.6 and small pore size of 0.9 μm. The porous Si₃N₄ ceramics are good structural/functional and promising electromagnetic wave transparent material.     

Mechanical properties and microstructures of co-precipitation derived tetragonal Y2O3-ZrO2-Al2O3 composites

Y-TZP Al₂O₃ specimens (2.5 mol% Y₂O₃-ZrO₂ and 5 to 30 wt% Al₂ 03) were prepared from coprecipitated powders and their mechanical properties were studied. The addition of alumina to Y-TZP improves the attainable density of the materials after sintering at 1500° C and reduces the degradation of their densities due to porosity formation when the materials are sintered above 1500° C. Near theoretical density could be achieved for most of the samples after HIPing at 1500° C for 1/2 h at 200 M Pa pressure. The fracture strength of the HIPed specimens was in the range 2.0 to 2.4 GPa and the stress intensity factor was in the range 3.5 to 6.0 MPa m^1/2. The mechanical strength of the materials was not degraded seriously after autoclaving in water at 175° C for 24 h. The surface layer of transformed monoclinic zirconia was less than 70 m thick even after autoclaving at 175° C for 5 days.     

Structural and microstructural transitions during phase separation and crystallization of Al2O3-SiO2-P2O5-Y2O3 glass

A highly refractory glass in the system Al₂O₃-SiO₂-P₂O₅-Y₂O₃ has been designed and produced such that, upon heating, an essentially fully crystalline glass—ceramic evolves containing mullite (nominally 3Al₂O₃·2SiO₂) and xenotime (YPO₄) as the final principal phases. Phase separation in this glass occurred during cooling from the melt and continued during annealing. XPS of the Al 2p, P 2p and the Y 3d electrons revealed that the average chemical environment of each of these elements is measurably different in the annealed glass and in the completely crystallized material. This indicates that the compositions of the separated glass phases are very different from those of the crystal phases which form from them. Additional rearrangement of the glass structure was observed at 1173 K. Extensive formation of mullite was initially detected at 1223 K and was followed by the crystallization of xenotime and the transient compounds of Y₄Al₂O₉, Y₂Si₂O₇, AlPO₄ and YP₅O₁₄. The optimum crystal nucleation and crystallization temperatures of 1173 and 1473 K, respectively, were determined from DTA, XRD, SEM and TEM studies.