基于EPC Class0协议超高频温度传感器无源电子标签

提出了实现具有温度传感功能的RFID无源标签芯片电路的设计思路,结合900MHz超高频EPC Class0协议,提出电子标签结构及参考电路,包括射频前端接收电路、数字逻辑控制部分、温度传感及量化和存储器四部分组成。采用Chartered0.35μm CMOS工艺流片、测试。温度量化采用一个低功耗8位逐次逼近模数转化器实现,输出温度量化误差在0～90℃范围内为±2℃。芯片测试工作电流20.7μA(不包含存储器)。     

高精度简易数字温度计的设计

为了满足工业生产或科研实验室等对温度智能高精度的测量要求,设计了一种基于STC10F04单片机的温度测量及显示电路.给出了系统硬件电路,对温度的实时探测采用DS18B20传感芯片作为监测元件,对集成温度传感器DS18B20的原理、主控芯片STC10F04单片机功能和应用做了介绍,最后对软件部分的设计流程及实现方法进行了详细的说明.该电路设计新颖、功能强大、结构简单.使用4位LED模块显示,测量范围-55℃～+125℃,测量精度为±0.5%℃.     

恒流LDO型串联大功率白光LED驱动器的设计

介绍了一种LDO型串联大功率白光LED恒流驱动控制器的设计.该电路包括LDO、带隙基准电压源、反馈电路、电流传感取样电路、大功率驱动电路五个部分.芯片采用9 V供电,利用片内集成的LDO电路输出5 V电压,作为控制部分的电源电压.采用台积电0.35μm 2P4M N阱CMOS标准工艺完成设计.Spectre仿真结果表明,当电源电压在±10%之间跳变或环境温度在0℃～100℃之间变化时,芯片可为3 W白光LED提供350 mA恒定驱动电流,误差小于±0.5%,电源利用效率可达76.17%以上.     

一种新颖的过热保护电路的设计

提出了一种新颖的过热保护电路--热调节电路,该电路将芯片耗散功率产生的温度变化置于一个闭环控制系统中,形成温度负反馈,实现芯片在需要过热保护时的恒温控制,保证芯片在无过热危险前提下的输出功率最大化.芯片采用SMIC 0.13μm CMOS Logic工艺模型,测试结果表明,热调节电路在出现过热情况时可使芯片内部温度恒定在105℃.     

基于0.18μm 标准CMOS工艺的嵌入双精度温度传感器的无源超高频RFID标签芯片

文章提出了一种符合EPC Gen-2协议嵌入双精度温度传感器的无源超高频RFID电子标签芯片。设计了一种采用双精度工作模式的新型温度传感器,它能够在满足传感器精度要求的条件下缩短传感时间和降低标签芯片的功耗。标签芯片集成了一个全MOS管构成的射频整流器和一个单多晶硅栅标准CMOS的非易失性存储器。采用0.18μm标准CMOS工艺集成实现了无源超高频RFID电子标签芯片。芯片面积为1mm2,片上非易失性存储器容量为192bit。芯片被压焊到PCB天线上实现了一个完整的标签。当温度传感器关闭/启动时,电子标签的灵敏度为-10.7dBm/-8.4dBm。电子标签达到的最大读/传感距离为4m/3.1m @2W EIRP。在5℃至15℃（-30℃至50℃）的温度范围内,传感器的误差为-0.6℃/0.5℃(-1.0℃/1.2℃)。在高（低）精度模式下,温度传感器的精度为0.01℃(0.18℃)。     

一种片上集成的温度传感器设计

本设计在FinFET器件结构的标准CMOS工艺下进行,实现一种集成在片上系统内部的温度传感器。为解决寄生PNP管电流增益过小对基射电压的影响,温度传感电路基于寄生垂直NPN三极管进行设计,以动态元件匹配、斩波等技术减少电路失调,模数转换采用相关双采样技术的单环二阶单比特量化的电容型Σ△调制器结构,以提高对系统噪声的抑制能力。该温度传感器集成在片上系统内部,实现对片上系统温度的监控。电路仿真及芯片测试结果表明,该温度传感器在-55℃至+125℃的温度范围内,电路仿真精度为±0.15℃,芯片测试精度为±1.5℃。     

2.45GHz电子射频标签模拟前端芯片的研制

分析了RFID系统的组成和基本原理,针对超高频EPC C1G2协议,提出半无源及有源电子标签前端结构及参考电路,包括整流器、偏置单元、上电复位、解调、反向散射调制、振荡器等部分.采用多种方法,极大程度上实现了电路整体的低功耗,并且采取了限幅、ESD电路,保障了电路的稳定性.采用标准CMOS工艺,设计出了低功耗、低电压工作的2.45 GHz射频模拟前端芯片电路,芯片在0.8～1.8 V电压内均可正常工作.芯片的静态工作电流为2μA,芯片工作时,平均工作电流约为65μA.     

一种用于TCOCXO的数据修调电路

采用VIS 0.15 pm BCD工艺设计了一款应用于温度补偿恒温晶体振荡器(TCOCXO)专用集成电路(ASIC)的数据修调电路.该数据修调电路由逻辑控制电路和一种电可擦可编程只读存储器(EEPROM)构成,主要功能是完成TCOCXO ASIC中温度补偿的控制及实现芯片的多模式工作.与通过模拟函数发生器实现的补偿方式相比,使用该数据修调电路实现的温度补偿方法可以实现更高的补偿精度和更小的芯片面积.通过该电路对TCOCXO ASIC进行调试与配置,搭载该ASIC的晶体振荡器在温度为-40～85℃时频率-温度稳定度可达±5×10-9.TCOCXO ASIC的测试结果表明,这种修调方法在减小芯片面积的同时可以实现更高精度的频率-温度补偿.     

一种实用化的数字体温测量算法及其ASIC实现

传统电子体温计芯片采用大量复杂模拟模块,功耗和成本都较高.文章提出了一种适合电子体温计芯片采用的温度测量算法,基于上华(CSMC)1.0μm MGLVCMOS标准工艺,设计出实用化的数字体温测量电路,并绘制了整个电路的版图.利用Spectre、Verilog_XL及Matlab对系统电路进行仿真测试,结果显示所设计的数字体温测量电路在+32.0℃～+42.0℃(+90.0°F ～+108.0°F)的温度范围内可以实现摄氏和华氏两种模式的测量,具有0.1℃(0.2°F)的精度,1.5V电源电压下系统平均电流仅为100μA,整个电路呈现低功耗和高集成度的特点.     

相变存储器驱动电路的设计与实现

介绍了一种新型的相变存储器驱动电路的基本原理,设计了一种依靠电流驱动的驱动电路,整体电路由带隙基准电压源电路、偏置电流产生电路、电流镜电路及控制电路组成.该结构用于16Kb以及1 Mb容量的相变存储器芯片的设计,并采用中芯国际集成电路制造(上海)有限公司的0.18μm标准CMOS工艺实现.该驱动电路通过Hspice仿真,表明带隙基准电压、偏置电流均具有较高的精度,取得了良好的仿真结果,在16 Kb相变存储器芯片测试中,进一步验证了以上仿真结果.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks