梯度掺杂AZO薄膜的制备及其性能表征

采用Sol-Gel法,以不同铝离子浓度的溶胶梯度掺杂的方法制备了Al掺杂ZnO（AZO）薄膜,用XRD衍射仪和SEM扫描电镜对该薄膜进行了结构和形貌分析,并对其电学性能和光学性能进行了研究。结果表明,梯度掺杂的AZO薄膜比单一浓度掺杂5.0 at%（原子数百分比）的薄膜具有更明显的c轴择优取向,更强的本征紫外发光峰和近紫外发光峰。当薄膜的退火温度在500~650℃区间时,薄膜电阻率稳定在10-2Ω.cm,高于700℃时,薄膜电阻率明显升高。     

晶种诱导电化学沉积法制备AZO薄膜

通过晶种诱导辅助电化学沉积法制备Al掺杂ZnO薄膜(AZO),利用XRD和SEM对薄膜的物相和形貌进行了表征,紫外-可见分光光度计和四探针式方阻仪分析了薄膜的光电性能,研究了不同Al掺杂浓度下AZO薄膜的晶体结构和光电性能。研究表明,一定含量的Al元素掺杂并不影响晶体的结构类型;制备的AZO薄膜均为六方纤锌矿结构,且掺杂后薄膜的电阻呈数量级下降;当Al ~(3+)掺杂浓度为0.005mol/L时,AZO薄膜的结晶性最好,薄膜均匀致密,方块电阻为0.85kΩ,光透过率达85%,禁带宽度为3.37eV。     

ZnO:Al(AZO)薄膜制备工艺参数的正交优化设计

采用正交设计法,对溶胶-凝胶方法制备AZO薄膜的工艺参数进行了优化研究;确定了最佳工艺参数,为制备AZO薄膜的工业化控制提供了一种可行的方法。     

低温热处理制备掺铝氧化锌薄膜技术的研究

使用溶胶-凝胶法在玻璃基底上制备掺铝氧化锌薄膜,研究热处理温度对薄膜结构、形貌、电学性能的影响。结果表明:使用低温热处理制备的薄膜具有更好的C轴取向生长,表面平整质密,面阻最小达到1800Ω/□。     

H2／（Ar＋H2）流量比对AZO薄膜结构及光电性能的影响

在Ar＋H2气氛下,用RF磁控溅射法在室温下制备Al掺杂的ZnO（AZO）薄膜,研究H2／（Ar＋H2）流量比对薄膜结构和光电性能的影响。结果表明,在沉积气氛中引入H2可以提高AZO薄膜的结晶质量,降低AZO薄膜的电阻率,提高其霍尔迁移率和载流子浓度;H2／（Ar＋H2）流量比为5％时,AZO薄膜的最小电阻率为1．58×10^-3Ω·cm,最大霍尔迁移率和载流子浓度分剐为13．17cm^2·（V·s）^-1和3．01×10^20cm^-3;AZO薄膜在可见光范围内平均透光率大于85．7％。     

氧氩比和退火温度对AZO薄膜结构与性能的影响

在通氩气和不同比率氧氩混合气体的条件下,利用射频磁控溅射法在玻璃衬底上制备铝(Al)掺杂氧化锌(AZO)薄膜(溅射功率为180W,衬底温度为300℃),并对部分薄膜样品进行400℃或500℃退火处理.采用X射线衍射仪(XRD)、原子力显微镜(AFM)和分光光度计对薄膜的结构、表面形貌和光学性能进行测试研究.结果表明,制备的所有薄膜均呈现(002)晶面择优生长;与氩气溅射相比,当采用氧氩混合气体溅射时,生长的AZO薄膜晶粒尺寸显著增大;退火处理使2类薄膜的表面粗糙度都明显减小,晶粒也有所增大(7%~13%).其中,在氧氩比为1∶2的混合气体中制备的薄膜,经过500℃退火后,晶粒尺寸最大(39.4nm),薄膜表面更平整致密,在可见光区平均透过率接近最大(89.3%).     

直流磁控溅射制备铝薄膜工艺参数

采用直流磁控溅射法,在硅基片上制备铝薄膜.用扫描电子显微镜(SEM)、X-射线衍射仪(XRD)等对薄膜的表面形貌和结构进行了分析,研究了不同工艺参数对薄膜表面形貌的影响,分析了制备铝薄膜的影响因素.分析结果表明该薄膜为纯铝薄膜,并且晶粒很小.实验得到制备铝薄膜的工艺参数为:本底真空度4.0×10-4Pa、工作真空度1.7 Pa、氩气流量20 cm3/s、工作电压300 V、工作电流1 A.     

金刚石薄膜的制备及透射率研究

用磁控溅射法制备金刚石薄膜,研究了工作气压、溅射电流、镀膜时间三个参数对金刚石薄膜透射率的影响。得到最佳工艺参数:工作气压1.3Pa,溅射电流0.4A,镀膜时间2min。镀制的金刚石薄膜可以作为红外元件的保护膜与增透膜。     

微波铁氧体器件薄膜的制备及性能研究

该文采用RF磁控溅射工艺制备了射频薄膜电感用的铁氧体薄膜。为了降低铁氧体薄膜在高频下的涡流损耗、剩余损耗等,通过对铁氧体材料的磁特性分析,研究了不同的温度、成分掺杂对铁氧体磁性能的影响,获得了矫顽力为5.619 6Guss的铁氧体薄膜,并采用SEM、XRD对铁氧体薄膜表面结构进行了表征,采用VSM对薄膜磁性能进行了测试。     

掺Al对TaN薄膜微结构及电性能的影响

采用反应直流磁控溅射法在Al2O3陶瓷基片上制备TaAlN薄膜,通过调节复合靶Al/Ta面积比调节Al掺杂量,研究了Al/Ta面积比对TaAlN薄膜微结构及电性能的影响。XRD结果表明,TaN薄膜中掺杂Al可在2θ为38.5°和65.18°处分别有立方结构的AlN(101)和AlN(202)相出现。随Al/Ta面积比的增大,TaAlN薄膜的沉积速率、电阻率、方阻以及TCR绝对值逐渐增大。当Al/Ta面积比为零时,TaN薄膜的电阻率和TCR绝对值分别为247.8μΩ⋅cm和12ppm/℃,当Al/Ta面积比增大到29%时,TaAlN薄膜的电阻率和TCR绝对值分别增大到2560μΩ⋅cm和270ppm/℃。     

Er／Yb／Al掺杂ZnO薄膜的结构与形貌研究

采用射频磁控溅射技术在室温下Si衬底上制备了ZnO薄膜和Er／Yb／Al掺杂的ZnO薄膜。通过对XRD的结构分析表明：未掺杂ZnO薄膜沿c取向性生长,掺杂ZnO薄膜偏离了正常生长,变为（102）取向性生长的纳米多晶结构;Er／Yb／Al掺杂的ZnO薄膜的晶粒尺寸随着Er元素含量的增多而减小。经AFM对其形貌分析表明：Er^3＋、Yb^3＋、Al^3＋的掺入引起了ZnO薄膜晶格场变化,使薄膜表面粗糙度变大。     

沉积压力对磁控溅射Mg薄膜结构的影响

采用直流磁控溅射方法在氧化锆固体电解质表面制备了Mg金属薄膜,利用XRD和SEM研究了沉积压力（0.9～2.1 Pa）对薄膜形貌和结构的影响.结果表明：随着沉积压力的提高,薄膜结晶程度逐渐变差,晶粒尺寸减小,表面粗糙度增大;薄膜呈（002）择优生长的柱状晶结构,且随着沉积压力的提高薄膜厚度先增加后减小.     

Properties of Al-doped Copper Nitride Films Prepared by Reactive Magnetron Sputtering

Cu3N and Al Cu3N films were prepared with reactive magnetron sputtering method. The two films were deposited on glass substrates at 0.8 Pa N2 partial pressure and 100 ℃ substrate temperature by using a pure Cu and AI target, respectively. X-ray diffraction （XRD） measurements show that the un-doped film was composed of Cu3N crystallites with anti-ReO3 structure and adopted [111] preferred orientation. XRD shows that the growth of Al-doped copper nitride films （AlxCu3N） was affected strongly by doping AI, the intensity of [111] peak decreases with increasing the concentration of Al and the high concentration of Al could prevent the Cu3N from crystallization. AFM shows that the surface of AlCu3N film is smoother than that of Cu3N film. Compared with the Cu3N films, the resistivities of the Al-doped copper nitride films （AlxCu3N） have been reduced, and the microhardness has been enhanced.     

Sputtering preparation and magneto-optical properties of GdTbFeCo thin films

Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target.The influences of sputtering parameters on the magneto-optical properties GdTbFeCo thin film were investigated by the variable control method.And the influence mechanism was analyzed in detail.After the sputtering parameters were optimized,it was found that when the distance between target and substrate was 72 mm,the thin film thickness was 120 nm,and the sputtering power,sputtering pressure and sputtering time was 75 W,0.5 Pa and 613 s,respectively,the coercivity with perpendicular anisotropy could be as high as 6735 Oe,and the squareness ratio of the hysteresis loop was almost equal to 1.     

Preparation and characterization of transparent conductive zinc doped tin oxide thin films prepared by radio-frequency magnetron sputtering

High transparent and conductive thin films of zinc doped tin oxide (ZTO) were deposited on quartz substrates by the radio-frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction (XRD) results show that ZTO films possess tetragonal rutile structure with the preferred orientation of (101).The surface morphology and roughness of the films was investigated by the atomic force microscope (AFM).The electrical characteristic (including carrier concentration,Hall mobility and resistivity) and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2(V ·sec)-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.     

生长温度对掺钛氧化锌薄膜光学性质的影响

以氧化锌钛陶瓷靶作为溅射源,采用磁控溅射技术在玻璃衬底上制备了掺钛氧化锌(TZO)透明导电薄膜,通过X射线衍射仪和分光光度计测试表征以及全光谱拟合法分析,研究了生长温度对TZO薄膜晶体结构和光学性质的影响.结果表明:所有TZO样品均为六角纤锌矿结构,并具有(002)择优取向,生长温度对薄膜晶粒尺寸和光学透射率的影响较明显,而对折射率、消光系数和光学能隙的影响较小.当生长温度为200℃时,TZO薄膜的晶粒尺寸最大,可见光范围平均透射率(含衬底)为76.1%,对应的直接光学能隙为3.45 eV.     

磁控溅射技术制备织构化表面Al掺杂ZnO薄膜

以Zn-Al(Al:2wt.%)合金为溅射靶材,采用直流反应磁控溅射的方法,在普通玻璃衬底上制备Al掺杂ZnO(AZO)薄膜。通过对衬底温度的调制,在较高衬底温度下(～280℃),无需经过常规溅射后腐蚀工艺过程,即可获得表面形貌具有特征陷光结构的AZO薄膜,其表面呈现类金字塔状,粗糙度RMS=65.831nm。通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了衬底温度对AZO薄膜性能的影响。X射线衍射(XRD)和扫描电子显微镜(SEM)测试表明,所有样品均为多晶六角纤锌矿结构,薄膜呈(002)晶面择优生长,其表面形貌随衬底温度的不同而改变。衬底温度为200℃及其以上工艺条件下获得的AZO薄膜,在可见光及近红外范围的平均透过率大于90%,电阻率优于1.5×10-3Ωcm。     

Influence of O/Ar ratio on the properties of NiO thin film grown with the method of radio-frequency magnetron sputtering

In order to obtain high quality NiO thin film grown with the radio-frequency magnetron sputtering method, the influence of O/Ar ratio on the structure, band-gap, resistivity and optical transmittance of NiO thin films were studied. It was found that the obtained NiO thin film showed (111) preferred orientation and higher transparency in the visible region. With the increasing of O/Ar ratio from 1∶7 to 8∶2, the optical transmittance of NiO thin films decreased and the optical band-gap was between 3.4 eV and 3.7 eV, and the sheet resistivity decreased from 5.4×107 Ω/□ to 1.0 ×105 Ω/□. Our study shows that the properties of NiO thin films can be adjusted in a wide range by adjusting the O/Ar ratio in the sputtering process.