考虑互耦影响的阵列综合

阵列天线综合一般是基于理想的单元天线方向图，而不考虑阵元间的互耦。本文提出了一种考虑互耦的基于遗传算法的阵列天线综合方法。该方法首先利用商用仿真软件分别计算阵列中各个阵元在阵列中的方向图，再通过遗传算法优化出目标方向图。通过实例比较可以看出，这种方法能够比较精确的仿真计算阵列的方向图，易于在工程上实现高性能的天线阵列系统。     

基于差分进化算法和遗传算法的混合优化 算法及其在阵列天线方向图综合中的应用

阵列天线方向图综合作为智能天线的一项重要技术对于复杂系统的优化问题提出了更高的要求.本文结合差分进化的基本思想和遗传算法的基因交叉和变异方法构建了一种新的混合优化方法.该算法使用差分进化算子作为主要优化手段,结合遗传算法优胜劣汰的基本思想以及其中的交叉和变异方法,通过融合两种优化方法各自的优点,可以显著改善多参数、高度非线性问题的优化结果、提高计算效率.计算机仿真结果表明,与现有算法相比,该算法用于天线方向图综合具有收敛速度快、优化能力强、算法可靠等优势.     

基于遗传算法的稀疏直线阵列方向图特性研究

针对直线阵列天线稀疏优化中的遗传算法进行研究,给出了一种稀疏直线阵列的优化模型,介绍了遗传算法的理论,通过算法仿真,对稀疏直线阵列的方向图特性进行研究.以方向图最大副瓣电平为适应度函数,得出结论:在稀疏阵列中阵元分布呈中心聚集态势,稀疏率、种群大小和约束条件等,均会对稀疏后阵列方向图特性产生影响;遗传算法适用于稀疏优化...     

一种超宽带相控阵天线阵方向图栅瓣抑制方法

针对超宽带相控阵天线方向图栅瓣抑制难题,基于遗传算法,构建了一种高效的适应度函数计算方法,通过优化设计相控阵天线各阵元间距,最终实现了8-18GHz超宽带阵列天线方向栅瓣的有效抑制,基于遗传算法,构建了一种高效的适应度函数计算方法,通过优化设计相控阵天线各阵元间距,最终实现了8-18GHz超宽带阵列天线方向栅瓣的有效抑制。通过与相同阵列长度下等间距时阵列天线方向的频率响应曲线比较,说明了本文算法的有效性。     

稀疏共形阵列天线方向图综合

提出一种基于多任务学习的共形阵列天线稀疏优化方法.该方法在考虑单元方向图的全局旋转变换和单元极化状态差异的情况下,建立了共形阵列天线导向矢量模型,结合多任务学习框架,以均匀分布共形阵列天线同一平面上阵元的方向图作为目标任务进行学习,通过稀疏向量支撑区的识别,将欠定的阵列流形矩阵方程转换为超定的特征矩阵方程进行求解,在实现阵列方向图逼近的前提下,建立了共形阵列天线阵元激励与位置联合稀疏优化的多任务学习模型.通过分块坐标下降法对稀布共形阵列天线多任务学习模型进行求解,实现了共形阵列天线的稀疏优化布阵.理论分析与实验仿真证明,该方法能有效减少共形阵的单元数量,简化共形阵列天线结构,获得与均匀分布的共形阵列天线性能一致的天线方向图,解决了稀疏共形阵列天线方向图综合优化设计难题.     

遗传算法在宽窄波束切换天线阵设计中的应用

采用对天线单元开关通断的方法,使天线阵形成不同的远场辐射方向图,实现阵列天线方向图宽波束和窄波束的切换。对一个24元线阵天线阵进行了设计。提出了一种改进的遗传算法及其目标函数模型。采用该算法对天线阵各个天线单元的电流幅度进行了优化计算,计算结果显示能够产生满足设计要求的宽波束和窄波束方向图。最后采用HFSS软件进行了仿真,计算结果与仿真结果吻合,证明了所提方法的有效性。     

基于一种新的遗传算法的天线方向图综合技术

给出了一种基于实数编码遗传算法的天线方向图综合方法.在遗传算法模型中采用了向下、向上外推和非一致杂交算子等交叉技术,并结合内插、交换等多种技术形成综合交叉方式.该算法克服了已有算法早熟、对初始群体依赖性等缺陷的同时,较大幅度地提高了算法的收敛速度和可靠性;通过在目标函数中加入零陷方差项克服了现有算法零陷不均衡的缺陷.计算机仿真结果表明,与现有算法相比,该方法用于天线方向图综合具有收敛速度快、零陷均衡、可靠等优势.     

基于遗传算法的天线阵方向图零点生成

遗传算法是一种高效的搜索算法.在对遗传算法的发展,基本思想,特点等方面作简要概述的基础上,将该算法应用于唯幅度控制的天线阵方向图零点生成.展示了其广泛的适用性及处理天线阵列综合问题的卓越能力,获得了比已有文献更好的效果.     

基于模糊相关机会规划的机会阵雷达方向图综合

研究了机会阵雷达的方向图综合问题,提出了一种基于模糊相关机会规划的方向图综合算法.该算法基于可信性理论,综合考虑天线单元分布的随机性以及工作状态的不确定性,以模糊变量来刻画天线单元参与方向图综合时的复杂不确定环境,建立方向图综合的规划模型.并结合模糊模拟算法和遗传算法设计了一种混合智能优化算法,用于求解该模型,仿真实验验证了所设计算法的有效性和稳定性.     

基于遗传算法的任意栅格星载多波束平面阵列方向图综合

讨论了一种基于遗传算法的综合任意平面阵列方向图的方法。算法直接将复数作为遗传算法的编码,省去了一般遗传算法的编码、解码步骤,简化了计算过程,节约了计算时间。采用两种交叉算子,能够较好地克服早熟收敛和收敛对初始群体的依赖。仿真结果表明,该方法能够对任意栅格阵列实现复杂形状方向图的赋形,并且在实现主瓣赋形的同时能够实现良好的旁瓣抑制。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.