共查询到18条相似文献,搜索用时 109 毫秒
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室温下采用射频磁控溅射粉末靶,在玻璃基底上制备了掺铝氧化锌/银/掺铝氧化锌(AZO/Ag/AZO)三层透明导电薄膜.通过优化中间银层厚度,优化了三层透明导电薄膜的光电性能.采用原子力显微镜和X射线衍射仪分别对薄膜的形貌和结构进行检测分析;采用紫外可见分光光度计和霍尔效应仪分别对薄膜的光电性能进行检测分析.结果表明,所制备的三层膜表面平整,颗粒大小错落均称;三层膜呈现多晶结构,AZO层薄膜具有(002)择优取向的六方纤锌矿结构,Ag层薄膜具有(111)择优取向的立方结构;当三层薄膜为AZO (20 nm) /Ag(12 nm) /AZO (20 nm)时,在550 nm处的透光率为88%,方块电阻为4.3Ω/□,电阻率为2.2×10-5 Ω·cm,载流子浓度为2.8×1022/cm3,迁移率为10 cm2/ (V·s),品质因子为3.5×10-2 Ω-1. 相似文献
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掺铝氧化锌(AZO)导电薄膜的研究进展 总被引:1,自引:0,他引:1
综述透明导电薄膜的性能、种类、制备工艺、研究及应用状况,重点讨论掺铝氧化锌(AZO)薄膜的结构、导电机理、光电性能和当前的研究焦点。并指出,为了进一步提高透明导电薄膜的性能,应从以材料选择、制备工艺、多层膜光学设计等方面深入研发,以满足尖端技术的需要。 相似文献
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AZO透明导电薄膜的特性、制备与应用 总被引:16,自引:2,他引:14
综述了AZO透明导电薄膜的结构特点、冶金学,电学和光学的特性,薄膜研究,应用和开发现状,认为AXO薄膜具有较好的开发前景。 相似文献
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室温下采用RF磁控溅射技术在石英衬底E制备了多晶ZnO:Al(AZO)透明导电薄膜,通过XRD,AFM,AES,Hall效应及透射光谱等测试研究了RF溅射功率、氩气压强对薄膜的结构、电学和光学性能的影响.分析表明:在最优条件下(溅射功率为250W,氩气压强为1.2Pa时),180nm AZO薄膜的电阻率为2.68×10-3 Ω·cm,可见光区平均透射率为90%,适合作为发光二极管和太阳能电池的透明电极.所制备的AZO薄膜具有c轴择优取向,晶粒问界中的O原子吸附是限制薄膜电学性能的主要因素. 相似文献
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Fushan Li Zhixiao Lin Beibei Zhang Yongzhi Zhang Chaoxing Wu Tailiang Guo 《Organic Electronics》2013,14(9):2139-2143
Graphene/Ag/Al-doped zinc oxide (AZO) multilayer films were fabricated by using chemical vapor deposition and magnetron sputtering methods. The electrical and optical properties of the transparent conductive graphene/Ag/AZO films were investigated. The graphene/Ag/AZO film can maintain high conductivity and transmittance without obvious degradation during bending test. A green flexible organic light emitting diode with a structure of graphene/Ag/AZO/N,N-diphenyl-N,N-bis(1-napthyl)-1,1-biphenyl-4,4-diamine/tris(8-hydroxyquinoline) aluminum(III)/lithium fluoride/Al exhibited a stable green emission and light-emitting efficiency during the cycle bending test. The multilayer films hold promise for application in flexible optoelectronic devices. 相似文献
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Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD)technique are investigated with various temperatures from 100 to 250 ℃ and different Zn ∶ Al cycle ratios from 20 ∶ 0 to 20 ∶ 3.Surface morphology,structure,optical and electrical properties of obtained AZO films are studied in detail.The Al composition of the AZO films is varied by controlling the ratio of Zn ∶ Al.We achieve an excellent AZO thin film with a resistivity of 2.14 × 10-3 Ω·cm and high optical transmittance deposited at 150 ℃ with 20 ∶ 2 Zn ∶ Al cycle ratio.This kind of AZO thin films exhibit great potential for optoelectronics device application. 相似文献
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Transparent Flexible Substrates Based on Polyimides with Aluminum Doped Zinc Oxide (AZO) Thin Films 总被引:2,自引:0,他引:2
Park H. J. Park J.-W. Jeong S.-Y. Ha C.-S. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2005,93(8):1447-1450
In this paper, transparent flexible substrates based on polyimides (PIs) with aluminum doped zinc oxide (AZO) thin films for organic electroluminescent devices have been prepared. PI film based on 2,2'-bis-(3,4-dicarboxyphenyl) hexafluoropropanedianhydride (6FDA) and 2,2'-bis-(trifluoromethyl)-4,4'-diaminobiphenyl (TFDB) were used for transparent flexible substrates. AZO thin films were prepared at two substrate deposition temperatures of 100/spl deg/C and 200/spl deg/C with a typical radio-frequency (r.f.) planar magnetron sputtering system. The sheet resistance and the optical transmission properties for AZO films on the fluorinated PI substrate were comparable with those for the AZO films on a glass substrate. The substrate properties were better when the deposition temperature was higher. 相似文献
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Maintaining electrical conductivity, optical transparency, and mechanical integrity against bending and stretching are key requirements for flexible transparent electrodes. Transparent conducting oxides (TCOs) are widely used thin film electrodes in optoelectronic devices. However, these materials are brittle and reducing film thickness to improve their mechanical integrity compromises their electrical performance. Here we combine TCO thin films with metal grids embedded in a polymer substrate to create hybrid electrodes with low sheet resistance and high resilience to bending. Amorphous zinc tin oxide (ZTO) and aluminum-doped zinc oxide (AZO) films sputtered onto polyethylene-terephthalate (PET) substrates with and without embedded metal grids are studied. The hybrid electrodes have an optical absorptance below 5% in the visible range and their electrical sheet resistance is less than 1 Ω/sq. The critical strain for tensile failure is analyzed through a combination of electrical measurements and in-situ observations of crack initiation and propagation during tensile loading. The mean critical strain for failure of the AZO/metal grid is 8.5% and that of the ZTO/metal grid is as high as 10%. The AZO and ZTO films alone present critical strain values around 0.6% and 1% respectively, demonstrating that the addition of the metal grid considerably improves the resistance onset strain of the electrodes far beyond these critical strain limits. 相似文献
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In this work, designed growth of aluminum (Al)/aluminum-doped zinc oxide (AZO), AZO/Al/AZO, and AZO/Al multilayer electrodes
by radiofrequency (RF) magnetron sputtering on glass substrates was studied. The microstructures, optical properties, and
electrical characteristics of the multilayer electrode thin films were analyzed, their structural denseness and thickness
were observed by field-emission scanning electron microscopy (FE-SEM), and their crystal orientation was identified by x-ray
diffraction (XRD). The resistivity and transmittance of the films were measured by four-point probe and UV–Vis–NIR spectrophotometer,
respectively. The resistivity of the AZO/Al/AZO multilayer electrode thin film was 1.55 Ω cm. The average transmittance of
the AZO/Al/AZO thin film over wavelengths from 400 nm to 800 nm was much better than that of other thin films, since Al nanoparticles
distribute in the AZO thin film during the sputtering process, as observed by high-resolution transmission electron microscopy
(HRTEM). In addition, the figure of merit of the AZO/Al/AZO trilayer film was much larger than those of the other structures. 相似文献