Processing Effects on Microstructure and Superconducting Properties of Sintered YBa2Cu3O6+x

The relationships between the microstructure of sintered YBa₂Cu₃O_{6+ x} superconductors and processing variables (sintering time, sintering temperature, and oxygen partial pressure) were examined. Large-grained microstructures were obtained in 100 kPa oxygen sintering atmospheres, while fine-grained microstructures were obtained in 2 kPa oxygen. The formation of liquid phases below the peritectic decomposition temperature of YBa₂Cu₃O_{6+ x} was found to have an effect on both the microstructure (as observed by optical and transmission electron microscopy) and the transport critical current density ( J_c ). The critical current density was found to be highest for sintering below the lowest invariant point, which is a function of the oxygen partial pressure. However, over the range of conditions examined here, there does not appear to be any correlation between microstructural features, such as average grain size and aspect ratio, and the transport J_c .     

Oxygen Partial Pressure and Grain Growth in Donor-Doped BaTiO3

The grain growth of donor-doped BaTiO₃ at different oxygen partial pressures was studied. Results showed that the oxygen pressure had a pronounced influence on the grain growth and related effects. A model for the grain size anomaly during sintering of donor-doped BaTiO₃ in the presence of a TiO₂-rich liquid phase is proposed.     

High-Temperature Stability of Lanthanum Orthophosphate (Monazite) on Silicon Carbide at Low Oxygen Partial Pressures

The stability of lanthanum orthophosphate (LaPO₄) on SiC was investigated using a LaPO₄-coated SiC fiber at 1200°–1400°C at low oxygen partial pressures. A critical oxygen partial pressure exists below which LaPO₄ is reduced in the presence of SiC and reacts to form La₂O₃ or La₂Si₂O₇ and SiO₂ as the solid reaction products. The critical oxygen partial pressure increases from ∼0.5 Pa at 1200°C to ∼50 Pa at 1400°C. Above the critical oxygen partial pressure, a thin SiO₂ film, which acts as a reaction barrier, exists between the SiC fiber and the LaPO₄ coating. Continuous LaPO₄ coatings and high strengths were obtained for coated fibers that were heated at or below 1300°C and just above the critical oxygen partial pressure for each temperature. At temperatures above 1300°C, the thin LaPO₄ coating becomes morphologically unstable due to free-energy minimization as the grain size reaches the coating thickness, which allows the SiO₂ oxidation product to penetrate the coating.     

Origin and Growth Kinetics of Platelike Abnormal Grains in Liquid-Phase-Sintered Alumina

The grain-growth behavior of Al₂O₃ compacts with small contents (≤10 wt%) of various liquid-forming dopants was studied. Equiaxed and/or elongated grains were observed for the following dopants: MgO, CaO, SiO₂, or CaO + TiO₂. The platelike grains, defined as the abnormal grains larger than 100 μm with an aspect ratio ≥5 and with flat boundaries along the long axis, were observed when the boundaries were wet with the liquid phase and the codoping satisfied two conditions of size and valence. These dopings were Na₂O + SiO₂, CaO + SiO₂, SrO + SiO₂, or BaO + SiO₂. However, an addition of MgO to the Al₂O₃ doped with CaO + SiO₂ resulted in the change of grain shape from platelike to equiaxial. Equiaxed grains were also observed for the MgO + SiO₂ doping, indicating that two conditions were necessary but not sufficient to develop the platelike grains. The fast growth rate of the platelike grains was explained by an increased interfacial reaction rate due to the codopants. AT the same time the codopants made the basal plane, which appeared as the flat boundaries, the lowest energy plane. The appearance of the platelike grains was favored in compacts with a small grain size and with a narrow size distribution at the onset of abnormal grain growth. Accordingly, the use of starting powders with a small particle size and narrow size distribution, smaller amounts of dopings, and high sintering temperature resulted in an increased number of the platelike grains.     

Effect of SiC on Interfacial Reaction and Sintering Mechanism of TiB2

Compacts of TiB₂ with densities approaching 100% are difficult to obtain using pressureless sintering. The addition of SiC was very effective in improving the sinterability of TiB₂. The oxygen content of the raw TiB₂ powder used in this research was 1.5 wt%. X-ray photoelectron spectroscopy showed that the powder surface consisted mainly of TiO₂ and B₂O₃. Using vacuum sintering at 1700°C under 13–0.013 Pa, TiB₂ samples containing 2.5 wt% SiC achieved 96% of their theoretical density, and a density of 99% was achieved by HIPing. TEM observations revealed that SiC reacts to form an amorphous phase. TEM-EELS analysis indicated that the amorphous phase includes Si, O, and Ti, and X-ray diffraction showed the reaction to be TiO₂+ SiC → SiO₂+ TiC. Therefore, the improved sinterability of TiB₂ resulted from the SiO₂ liquid phase that was formed during sintering when the raw TiB₂ powder had 1.5 wt% oxygen.     

Hot Isostatic Pressing of Transparent Nd:YAG Ceramics

This paper demonstrates that fine-grained (2–3 μm), transparent Nd:YAG can be achieved at SiO₂ doping levels as low as 0.02 wt% by the sinter plus hot isostatic pressing (HIP) approach. Fine grain size is assured by sintering to 98% density, in order to limit grain growth, followed by HIP. Unlike dry-pressed samples, tape-cast samples were free of large, agglomerate-related pores after sintering, and thus high transparency (i.e., >80% transmission at 1064 nm) could be achieved by HIP at <1750°C along with lower silica levels, thereby avoiding conditions shown to cause exaggerated grain growth. Grain growth was substantially limited at lower SiO₂ levels because silica is soluble in the YAG lattice up to ∼0.02–0.1 wt% at 1750°C, thus allowing sintering and grain growth to occur by solid-state diffusional processes. In contrast, liquid phase enhanced densification and grain growth occur at ∼0.08–0.14 wt% SiO₂, especially at higher temperatures, because the SiO₂ solubility limit is exceeded.     

Microstructural Characterization of Porous Silicon Carbide Membrane Support With and Without Alumina Additive

Porous silicon carbide (SiC) membrane supports sintered at 1500°–1800°C were prepared by cold isostatic pressing (CIP) under different pressures and using different amounts of alumina additive (0%–4%). The relationship between processing factors and pore size and microstructure was examined. Varying the sintering temperature, the CIP pressure and the amount of additive used were found to be effective for controlling pore size and microstructure. The pore size and particle size of the membrane support prepared without alumina were found to increase with increasing sintering temperature. This was attributed to surface diffusion. Densification of the undoped support did not occur, however, because of concurrent pore development. In the SiC membrane support containing 4% alumina, small particles and a pore size of around 100 nm were retained. This was because of the formation of a limited amount of SiO₂–Al₂O₃ liquid phase during sintering.     

Microstructures of SrTiO3 Internal Boundary Layer Capacitors During and After Processing and Resultant Electrical Properties

The microstructure of strontium titanate internal boundary layer capacitors at various stages in their processing was studied by transmission electron microscopy of rapidly quenched and normally cooled samples. Compositions containing excess TiO₂, Al₂O₃, and SiO₂ have a completely wetting liquid phase at the sintering temperature; during cooling Ti_nO_{2 n −1}, Magneli phases precipitate at multiple grain junctions. Diffused metal oxides and flux (Bi₂O₃, PbO, CuO, and B₂O₃) rapidly penetrate as a liquid phase along boundaries in postsintering heat treatment. This liquid phase disappears during slow cooling.     

Grain-Growth Behavior during Stepwise Sintering of Barium Titanate in Hydrogen Gas and Air

To study the effect of oxygen partial pressure on grain growth in BaTiO₃, TiO₂-excess samples have been sintered in air with and without a prior H₂ heat treatment. Without prior H₂ treatment, abnormal grain growth occurs below and above the eutectic temperature ( T _e). An introduction of H₂ treatment before air sintering, however, increases the average grain size and suppresses the formation of abnormal grains during subsequent air sintering below and above T _e. This H₂ treatment effect has been explained in terms of a decrease of the driving force for the growth of faceted grains below a critical value for formation of abnormal grains. The observed grain-growth behavior under various atmospheres demonstrates the possibility of having various microstructures via control of oxygen partial pressure and initial grain size.     

Stability of Si3N4 and Liquid Phase(s) During Sintering

Advanced sintering techniques for consolidation of Si₃N₄ powders in the presence of an oxygen-rich liquid phase(s) require high temperatures and usually high nitrogen pressures. A stability diagram is constructed for Si₃N₄ as a function of the partial pressures of nitrogen (P_N2) and silicon (P_Si). High P_N2 (20 to 100 atm) increases the stability of Si₃N₄ and the oxygen-rich liquid phase by reducing the P_Si and P_Si0, respectively. The region of high sinterability is outlined for submicrometer Si₃N₄ powders containing 7 wt% BeSiN₂ and 7 wt% SiO₂ as densification aids .     

Stability of Phases in the Si-C-N-O System

The stability of the phases in equilibrium is calculated for the Si-C-N-O system in order to analyze and predict the reactions in ceramic whisker formation and sintering of silicon nitride composites. Equilibria among SiC, Si₃N₄, Si₂N₂O, SiO₂, Si, and the gas phase are evaluated at different carbon activities, nitrogen pressures, and temperatures. Phase stability diagrams are constructed as a function of nitrogen and oxygen pressures for two levels of carbon activity. Silicon nitride becomes a stable phase with increasing nitrogen pressure or decreasing carbon activity and temperature, whereas silicon carbide becomes a dominant phase at lower nitrogen pressures or at higher temperatures when carbon activity is unity. The maximum sintering temperature of the SiC/Si₃N₄ composite is higher with an elevated nitrogen pressure or a reduced carbon activity.     

Effect of Sintering Aids on Microstructures and PTCR Characteristics of (Sr0.2Ba0.8)TiO3 Ceramics

The effects of liquid-phase sintering aids on the microstructures and PTCR characteristics of (Sr_0.2Ba_0.8)TiO₃ materials have been studied. The grain size of sintered materials monotonically decreases with increasing content of Al₂O₃–SiO₂–TiO₂ (AST). The ultimate PTCR properties with ρ_ht/ρ_rt as great as 10^5.61 are obtained for fine-grain (10-μm) samples, which contain 12.5 mol% AST and were sintered at 1350°C for 1.5 h. The quantity of liquid phase formed due to eutectic reaction between AST and (Sr,Ba)TiO₃ is presumably the prime factor in determining the grain size of samples. The grains grow rapidly at the sintering temperature in the first stage until the liquid phase residing at the grain boundaries reaches certain critical thickness such that the liquid–solid interfacial energy dominates the mechanism of grain growth.     

Influence of SiO2 Addition on the Dielectric Properties and Microstructure of (Ba0.96Ca0.04)(Ti0.85Zr0.15)O3 Ceramics

In this study, the effect of SiO₂ doping on the sintering behavior, microstructure, and dielectric properties of BaTiO₃-based ceramics was investigated. Silica was added to (Ba_0.96Ca_0.04)(Ti_0.85Zr_0.15)O₃ (BCTZ) powder prepared using the solid-state method. SiO₂-doped BCTZ ceramics with a high density and a uniform grain size were obtained and sintered at 1220°C in a reducing atmosphere. A second phase (BaTiSiO₅) existed in samples when SiO₂ was added in excess of 1%. The amount of the second phases was observed to increase as the number of SiO₂ additives increased. It was found that BCTZ ceramics sintered with SiO₂ are helpful in reducing the sintering temperature for a typical thick film and MLCC applications. However, there were disadvantageous effects on the dielectric properties with mere addition of SiO₂ addition (3% and 5%) due to higher formation of BaTiSiO₅. Doping with a small amount of silica can improve the sintering and dielectric properties of BCTZ ceramics. In addition, to understand the effect of the BaTiSiO₅ phase on the dielectric properties of BCTZ ceramics, the BaTiSiO₅ composition was synthesized from individual BaCO₃, TiO₂, and SiO₂ powders using conventional solid-state methods. X-ray diffraction results show the presence of mainly the crystalline phase, BaTiSiO₅, in the sintered ceramics.     

Mechanical Activation of the Decomposition and Sintering of Kyanite

The influence of attrition milling on the thermal decomposition of kyanite (Al₂O₃·SiO₂) to mullite (3Al₂O₃·2SiO₂) and SiO₂, and its subsequent sintering, was studied. A commercial kyanite was attrition-milled for times up to 12 h. Dilatometry confirmed that as-received unmilled kyanite decomposes between 1300° and 1435°C. The decomposition reaction is slow initially and accelerates during the later stages until about one-half of the decomposition occurs in the last 35°C. For the attrition-milled kyanite, the onset decomposition temperature decreases, the transformation temperature interval is reduced, and both the decomposition reaction and subsequent sintering are accelerated. A dense microstructure of fine equiaxed mullite grains in the 1 μm size range, evenly dispersed in a glassy matrix, is obtained by sintering the attrition-milled kyanites. These results are explained in terms of the energy accumulated during attrition milling, a reduction of the milled kyanite particle size, and the presence of a liquid phase during sintering.     

Effect of SrO Additions on the Grain-Boundary Microstructure and Mechanical Properties of Magnesia-Partially-Stabilized Zirconia

Improvements in the mechanical properties of magnesia-partially-stabilized zirconia are obtained by the addition of SrO. Evidence is presented which indicates that the added SrO effectively neutralizes the detrimental effects of SiO₂ contaminant by forming a glass phase which is ejected from the bulk of the ceramic during sintering. This combined effect results in the retardation of the subeutectoid decomposition reaction while minimizing retention of glass phases at the grain boundaries.     

Grain Growth Phenomena in the Interface Region of α-Alumina Bilayer Composites

Microstructural development in the interface region of α-Al₂O₃ bilayer composites has been systematically investigated in terms of the sintering additive CaO–SiO₂, residual impurity level in the starting powders (particularly MgO), and sintering conditions. The interfacial microstructure is strongly related to relative CaO–SiO₂ doping levels in the two constituting layers and to residual impurities in the starting powders. The presence of high levels of impurities in the starting powder can substantially modify the features of CaO–SiO₂-Al₂O₃ liquid at the interface region, thereby strongly influencing α-Al₂O₃ grain growth across the interface. Three grain growth modes in the interface region thus have been identified for different combinations of impurity level and CaO–SiO₂ dopant in the α-Al₂O₃ bilayer. This provides an important mechanism for controlling two-dimensional structures in coatings, films, and layered ceramic materials for various engineering applications.     

Texture Development by Templated Grain Growth in Liquid-Phase-Sintered α-Alumina

The distribution and orientation of platelet-shaped particles of α-alumina in a fine-grained alumina matrix is shown to template texture development via anisotropic grain growth. The textured microstructure ranges from 4 wt% oriented platelet particles in calcined samples to nearly 100% oriented α-Al₂O₃ grains after sintering at 1400°C. A CaO + SiO₂ liquid phase creates favorable thermodynamic and kinetic conditions for anisotropic grain growth and grain reorientation during sintering. Important criteria for templated grain growth include (1) anisotropic crystal structure and growth, (2) high thermodynamic driving force for template grain growth, and (3) modification of diffusion in the system to continuously provide material to the anisotropically growing template grains.     

Final Sintering of Cr2O3

The effect of oxygen activity on the sintering of high-purity Cr₂O₃ is shown. Theoretical density was approached at the equilibrium O₂ partial pressure needed to maintain the Cr₂O₃ phase ( P _o2=2×10⁻¹² atm). The presence of N₂ in the atmosphere during sintering did not prevent final sintering. The addition of 0.1 wt% MgO at this equilibrium pressure effectively controlled the grain growth and further increased the sintered density to very near the theoretical value. The solute segregation of MgO at the grain boundaries, followed by nucleation of spherulites of magnesium chromite spinel on the boundaries, accounted for the grain-growth control. It is speculated that these isolated spherulites locked the grain boundaries together, changing the fracture mode of the sintered oxide from inter-to intragranular and also that larger MgO additions produced a more continuous spinel formation at the boundaries, resulting in decreased sintered density. Weight loss, which was also monitored as a function of O₂ activity, correlated with the changing predominant volatile species in the Cr-O system.     

Low-Thermal-Expansion Polycrystalline Zirconyl Phosphate Ceramic: Solid-Solution and Microcracking-Related Properties

The effects of the addition of Ta205 or Nb205 on the sintering and refractory properties of 2ZrO₂·P₂O₅-based ceramics have been investigated. The solid solution with Nb₂O₅ has a lower average thermal expansion coefficient than the pure phase. The strength of the polycrystalline ceramic is reduced when the grain size exceeds the transition grain size for microcracking. The thermal expansion of the ceramic is abruptly lowered when the grain size exceeds a value which should be termed the "second transition grain size" for additional wider microcracking. SiO₂ was found most effective for inhibiting grain growth to prevent microcracking and for obtaining a strong ceramic.     

Sintering of LaFeO3 Ceramics

The sintering of LaFeO₃ has been studied in the temperature interval 1100–1600°C in air. The effect of cation nonstoichiometry on densification, microstructure, and phase composition is emphasized. La₂O₃ was observed to inhibit both sintering and grain growth. In Fe-excess materials, exaggerated grain growth occurred, particularly above 1430°C, where a liquid phase was formed. Postsintering swelling was observed in Fe-excess materials above 1430°C. The swelling mechanism is related to phase equilibria, which are reductive in nature and lead to the evolution of oxygen gas. The density in La-excess materials remains high up to 1600°C, but the ceramics might disintegrate in air.