一种10 Gbit/s光接收机前置放大器

基于0.18 μm BiCMOS工艺,设计了一种适用于光纤通信的10 Gbit/s光接收机前置放大器。电路由跨阻放大器、两级可变增益放大器、缓冲器、直流偏移消除电路、峰值探测器和自动增益控制环路组成。跨阻放大器采用并联-并联负反馈结构,在满足增益、带宽要求前提下实现低噪声特性。后级放大器引入了增益可变控制,获得宽输入动态范围,同时采用电容简并技术提升带宽。版图后仿真结果表明,在小信号光电流输入下,放大器的差分跨阻增益为10.7 kΩ,-3 dB带宽为7.4 GHz,平均等效输入噪声电流密度为16.9 pA/Hz。可调增益范围在25.2~80.6 dBΩ内,输入动态范围超过40 dB。在3.3 V电压下,静态功耗为166 mW,版图尺寸为764 μm540 μm。     

应用于GPS接收机的宽动态范围连续VGA

针对全球定位系统(GPS)接收机中宽动态范围的要求,提出了一种伪指数近似可变增益放大器(VGA)。该VGA在改进的吉尔伯特单元基础上,采用电压-电流转换电路构成伪指数函数,通过两级级联方式来实现宽线性增益范围,且电路结构对温度不敏感。测试结果表明,当控制电压在0.4~1.45 V变化时,该VGA的线性增益范围为20~80 dB。在50 dB线性增益范围内,增益随温度变化的最大偏差不大于±1.5 dB。     

应用于车载激光雷达的宽带AGC跨阻放大器

针对车载激光雷达接收端脉冲信号脉宽窄、动态范围大等特点,提出了一种新型宽带、宽动态范围和高增益的自动增益控制(AGC)跨阻放大器。采用改进型调节型共源共栅结构作为输入级,拓展了带宽。使用改进型吉尔伯特单元作为可变增益放大器,进一步提高了带宽和增益。增加了AGC环路,提高了输入动态范围。基于标准 0.18 μm CMOS工艺进行设计与仿真,整体版图尺寸为760 μm×650 μm。仿真结果表明,该电路的-3 dB带宽为1.06 GHz,跨阻增益为80.79 dBΩ,输入动态范围为60 dB(1 μA~1 mA),功耗为47.6 mW,满足车载激光雷达接收机的要求。     

基于FPGA的大动态范围数字AGC的实现

数字中频接收机中,采用可变增益放大器AD603、数字可控增益放大器AD8320和FPGA实现大动态范围的数字自动增益控制（AGC）。该设计充分利用AD9220的两个指示输入信号范围的输出端口和FPGA编程同时控制可变增益放大器和数字可控增益放大器,即使用同一控制字同时控制两个增益,从而实现增大AGC动态范围,简化电子设备调试,提高接收机工作性能的目的。     

基于FPGA的大动态范围数字AGC的实现

数字中频接收机中,采用可变增益放大器AD603、数字可控增益放大器AD8320和FPGA实现大动态范围的教字自动增益控制(AGC).该设计充分利用AD9220的两个指示输入信号范围的输出端口和FPGA编程同时控制可变增益放大器和数字可控增益放大器,即使用同一控制字同时控制两个增益,从而实现增大AGC动态范围,简化电子设备调试,提高接收机工作性能的目的.     

用于超宽带接收机的高速低复杂度模拟自动增益控制环路

在射频接收机中,自动增益控制环路(AGC)根据接收信号幅度控制放大器增益,向后级模数转换器(ADC)提供恒定幅度的信号,以实现不同强度信号的正确接收。在超宽带(UWB)接收机中,极大的信号带宽给AGC的设计提出了挑战。本文提出了一个用于超宽带(UWB)接收机的模拟自动增益控制环路(AGC)。该AGC环路采用多级可变增益放大器(VGA)串联的放大器结构,通过峰值检测电路和模值运算电路检测输出复信号模值的峰值,和参考电位比较后反馈控制VGA的增益,从而得到恒定幅值的ADC的输入。整个电路结构简单,复杂度低。基于HJ0.18μmCMOS工艺的仿真结果表明,本文提出的AGC工作在500MHz带宽下,增益调节范围达40dB,三阶交调点为20dBm,能够满足UWB接收机的要求。     

使用AD603和AD8318实现大动态范围IF接收机

通过对雷达接收设备中中频接收设备电路的基本原理的学习和研究,着重介绍了低噪声可变增益放大器AD603以及高精确度和温度稳定性的对数放大检波器AD8318的使用。最后以AD603,AD8318为核心放大器、检波器,详细阐述了中频接收机放大电路和检波电路以及滤波器电路的设计与实现,实现了超过100dB动态范围的IF接收机。最后通过测试提出了一些相关注意事项。     

一款适用于WCDMA标准的大动态范围SiGe HBT可变增益放大器设计

第三代移动通信标准WCDMA要求放大器增益可调,并且增益动态范围较大.根据这一要求给出了一种基于SiGe HBT具有高动态范围的可变增益放大器(VGA)设计.放大器为三级级联结构,第一级为输入缓冲级,第二级为增益控制级,最后为放大级.VGA的增益控制通过调整第二级的偏置实现.VGA在1.95 GHz频率下,在0～2.7 V增益控制电压变化下,具有44 dB增益变化范围,最大增益49 dB.在最大增益处最小噪声系数为2.584 dB,输入输出电压驻波比低于2,性能良好.     

基于LMH6505的中频信号调理电路设计

信号调理电路是一种在中频接收机中得到广泛应用的电路。针对中频数字接收机中对输入模拟信号的要求,设计一种适应性良好的信号调理电路介绍自动增益控制（AGC）的原理,并给出基于可变增益放大器LMH6505的具体电路设计.该电路具有低功耗、增益可调范围宽和频率范围宽的特点,适用于一般的中频接收机。     

具有温度补偿及dB线性增益控制的单级宽范围CMOS可变增益放大器

提出了一种新颖的宽范围CMOS可变增益放大器结构.利用可变跨导和新颖的可变输出电阻,基于单独可变增益级的放大器可提供80dB的宽范围调节.同时控制电路的设计完成了温度补偿及dB线性增益特性,实现在整个温度及增益调节范围内绝对增益误差小于±1.5dB.基于0.25μm CMOS工艺验证表明,放大器可提供64.5dB的增益变化范围,其中dB线性范围为55.6dB.输入1dB压缩点为-17.5到11.5dBm,3dB带宽为65MHz到860MHz,2.5V电源供电下功耗为16.5mW.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.