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1.
雷宇  陈后鹏  金荣  胡佳俊  宋志棠 《微电子学》2015,45(3):335-339, 344
提出一种应用于相变存储器芯片的新型开关电容电荷泵。对于16 位的相变存储器芯片,系统擦写时间大于100 ns,电荷泵的驱动能力至少为60 mA。相比于传统开关电容电荷泵,该电荷泵根据负载电流大小自动生成一个使能信号,该信号通过控制升压模块功率管的开启与关断来调节输出电压,最终将输出电压控制在一个允许的范围内波动。采用40 nm CMOS工艺对电荷泵进行设计和仿真,结果表明在5 mA负载时,电源效率为87%,输出纹波为2.84 mV;负载电流从0 mA变化到60 mA时,电源效率皆高于82%;负载电流变化在300 mA/μs时,输出瞬态响应时间为1.63 μs,满足相变存储器芯片的使用要求。  相似文献   

2.
针对相变存储器中编程驱动电路的电源效率问题,设计了一种1.5X/2X/3X自适应高效电荷泵,电路采用跳周期模式稳定输出电压.在中芯国际0.18 μm标准CMOS工艺模型下,对电路进行了仿真.结果表明,在输入电压为2.2~4.8 V时,输出5V电压,最大负载电流为10mA,电源效率最高可达94%.  相似文献   

3.
针对交叉耦合型电荷泵电荷回流的问题,本文提出了一种新型六相位电荷泵结构,电荷泵的主体由3个NMOS管和3个泵电容组成。考虑到时钟驱动能力对电荷泵性能的影响,设计通过增加额外的时钟驱动模块实现四相位到六相位的时钟转换,从而减小电荷泵的上升时间并改善输出电压。此外,电路采用并联双支路结构减小输出电容的充放电时间间隔,以减小输出纹波。基于0.13μm工艺的仿真结果表明,在时钟频率为20MHz,负载电容为50pF,负载电流为300μA的条件下,该电路可以实现3.3V到15V的电压转换,效率可达到67.7%,输出纹波仅为38.5mV。  相似文献   

4.
In order to improve efficiency and reduce the output ripple, a novel multi-mode charge pump is presented. The proposed charge pump includes dual-loop regulation topology-skip and linear modes. It consumes low quiescent current in skip mode for light loads, and produces low ripple in linear mode for heavy loads, which closes the gap between linear mode and skip mode with active regulation; a multi-mode charge pump employing the technique has been implemented in the UMC 0.6-μm-BCD process. The results indicate that the charge pump works well and effectively; it has low ripple with special regulation, and minimizes the size of the capacitance, then decreases the area of the PCB board. The adjustable output of the positive charge pump is 10-30 V, and the maximum output ripple is 100 mV when the load current is 200 mA. The line regulation is 0.2%/V, and load regulation is 0.075%.  相似文献   

5.
提出了一种经稳压后的电荷泵架构,通过改进传统四相位电荷泵的输出级使效率提高了5%,通过改进传统的控制时钟方案使输出电压纹波降低了38%,已在和舰0.18μm三阱CMOS工艺中得到实现.  相似文献   

6.
基于开关电容系统理论,设计了一种多通路输出的电荷泵,为AMOLED显示驱动芯片中的源驱动和栅驱动电路提供电源电压.使用混合调制模式,根据源驱动和栅驱动的等效负载情况,分别设计相应的环路调制电路,在实现恒压输出的同时,降低VDH纹波电压与电源噪声,提高功率效率.基于0.18μm HVCMOS工艺的仿真结果表明,电路能够获...  相似文献   

7.
为了解决目前基于电荷泵的开关电容电压转换芯片功能较为单一的问题,基于Dickson经典电荷泵结构,匹配四路双极型晶体管开关同时实现对输入电压的倍增输出以及倍增后的电压反向。四路二极管充作开关来使用,在降低开关器件导通电压的同时简化了开关电路,缩小了电路的尺寸,并降低了电路的功耗。基于国内某工艺线的40 V互补双极型工艺,设计并制作了带正/负两路输出的开关电容电荷泵电压转换器芯片电路。流片测试结果表明:当电源电压为4 V(负载电流为0 mA、+10 mA)、5 V(负载电流为±10 mA)、9 V(负载电流为+10 mA)、10 V(负载电流为-10 mA)以及11 V(空载)时,输出电压均满足设计指标。  相似文献   

8.
为了满足TFT-LCD液晶显示的驱动要求,设计了一种通过控制饱和区MOS管的导通电阻来调节输出电压的可调电荷泵。与传统的电荷泵相比,该电荷泵通过负反馈系统进行控制,具有输出可调、最少外围器件、低纹波、易于集成等优点。采用此可调电荷泵电路的芯片已在UMC0.6μm-BCD工艺线投片,测试结果表明,该可调电荷泵电路工作良好,独特的稳压方式使得电荷泵输出纹波降至最低,并且电荷泵的电容尺寸小,从而减小了整个系统的PCB面积,可调电荷泵正电压输出范围为10~30V,负电压输出范围为-5~-30V,负载电流为50mA时,输出纹波为27mV,可调电荷泵的整体效率可达80%。  相似文献   

9.
《电子与封装》2017,(7):21-24
针对现有电荷泵存在的体效应、电荷回流等问题,提出一种高增益低纹波的电荷泵电路。该电荷泵采用两路互补的结构,减小了输出电压纹波;使用电位选择电路消除体效应,并使用两相低电平不交叠时钟避免电荷回流,提高了电压增益和转换效率。Hspice仿真结果表明,在级数同为5级和电流负载相同的情况下,文中提出的电荷泵相比现有电荷泵具有更高的输出电压和更小的电压纹波。  相似文献   

10.
本文设计了一种给G类音频功率放大器提供自适应电源的双模电荷泵电路。根据输入信号的幅度,该电荷泵可以提供两档电压轨来节省功耗。它在重载下工作于电流控制模式,轻载下工作于脉冲频率调制(PFM)模式来降低功耗。在PFM工作模式下,引入功率管尺寸动态调整的技术来减小PFM模式下的输出电压纹波并防止开关频率进入音频范围。该电荷泵电路采用0.18μm,3.3V的CMOS工艺制备。试验结果表明该电荷泵在1/2x模式下可以实现79.5%的最高效率,在1x模式下可以实现83.6%的最高效率。在PFM控制模式下,电荷泵在负载电流小于120mA的范围内,其输出纹波小于15mV;在电流控制模式下,在负载电流小于300mA的范围内,其纹波小于18mV。测试结果与文中提出的功率分段的PFM控制模式的纹波、效率的解析模型得到的计算及仿真结果基本一致,验证了模型与分析方法的正确性。  相似文献   

11.
In order to improve efficiency and reduce the output ripple, a novel multi-mode charge pump is presented.The proposed charge pump includes dual-loop regulation topology-skip and linear modes. It consumes low quiescent current in skip mode for light loads, and produces low ripple in linear mode for heavy loads, which closes the gap between linear mode and skip mode with active regulation; a multi-mode charge pump employing the technique has been implemented in the UMC 0.6-μm-BCD process. The results indicate that the charge pump works well and effectively; it has low ripple with special regulation, and minimizes the size of the capacitance, then decreases the area of the PCB board. The adjustable output of the positive charge pump is 10-30 V, and the maximum output ripple is 100 mV when the load current is 200 mA. The line regulation is 0.2%/V, and load regulation is 0.075%.  相似文献   

12.
冯鹏  李昀龙  吴南健 《半导体学报》2010,31(1):015009-5
设计实现了一种高效率的电荷泵电路。利用电容和晶体管对电荷传输开关进行偏置来消除开关管阈值电压的影响。同时,通过对开关管的的衬底进行动态的偏置使得在电荷传输期间当开关管打开时其阈值电压较低,在开关管关断时其阈值电压较高。该电荷泵电路的效率得到了提高。基于0.18μm,3.3V标准CMOS工艺实现了该电路。在每级电容为0.5pF,时钟频率为780KHz,电源电压为2V的情况下,测得的8级电荷泵的输出电压为9.8V。电荷泵电路和时钟驱动电路从电源处总共消耗了2.9μA的电流。该电荷泵电路适合于低功耗的应用。  相似文献   

13.
Feng Peng  Li Yunlong  Wu Nanjian 《半导体学报》2010,31(1):015009-015009-5
A high efficiency charge pump circuit is designed and realized. The charge transfer switch is biased by the additional capacitor and transistor to eliminate the influence of the threshold voltage. Moreover, the bulk of the switch transistor is dynamically biased so that the threshold voltage gets lower when it is turned on during charge transfer and gets higher when it is turned off. As a result, the efficiency of the charge pump circuit can be improved. A test chip has been implemented in a 0.18 μm 3.3 V standard CMOS process. The measured output voltage of the eight-pumping-stage charge pump is 9.8 V with each pumping capacitor of 0.5 pF at an output current of 0.18 μA, when the clock frequency is 780 kHz and the supply voltage is 2 V. The charge pump and the clock driver consume a total current of 2.9 μA from the power supply. This circuit is suitable for low power applications.  相似文献   

14.
Li Xianrui  Lai Xinquan  Li Yushan  Ye Qiang 《半导体学报》2009,30(10):105012-105012-5
To meet the demands for a number of LEDs, a novel charge pump circuit with current mode control is proposed. Regulation is achieved by operating the current mirrors and the output current of the operational transcon ductance amplifier. In the steady state, the input current from power voltage retains constant, so reducing the noise induced on the input voltage source and improving the output voltage ripple. The charge pump small-signal model is used to describe the device's dynamic behavior and stability. Analytical predictions were verified by Hspice sim ulation and testing. Load driving is up to 800 mA with a power voltage of 3.6 V, and the output voltage ripple is less than 45 mV. The output response time is less than 8 μs, and the load current jumps from 400 to 800 mA.  相似文献   

15.
To meet the demands for a number of LEDs,a novel charge pump circuit with current mode control is proposed.Regulation is achieved by operating the current mirrors and the output current of the operational transconductance amplifier.In the steady state,the input current from power voltage retains constant,so reducing the noise induced on the input voltage source and improving the output voltage ripple.The charge pump small-signal model is used to describe the device’s dynamic behavior and stability.Analytical predictions were verified by Hspice simulation and testing.Load driving is up to 800 mA with a power voltage of 3.6 V,and the output voltage ripple is less than 45 mV.The output response time is less than 8μs,and the load current jumps from 400 to 800 mA.  相似文献   

16.
王松林  周波  叶强  王辉  郭王瑞 《半导体学报》2010,31(4):045009-5
提出了一款新型功率管驱动电路。P沟道功率管驱动电路加入了防死锁模块防止了死锁的出现,提高了瞬态响应;N沟道功率管驱动电路加入了附加的充电支路,提高了驱动能力和瞬态响应。整个电路基于0.6μm BCD工艺,在Cadence Spectre下仿真。和传统的功率管驱动电路相比,新的P沟道功率管驱动电路的上升时间由60ns减少到14ns,下降时间由240ns减少到30ns,并且功耗从2mW减少到1mW;新的N沟道功率管驱动电路的上升时间由360ns减少到27ns,功耗从1.1mW减少到0.8mW。  相似文献   

17.
Wang Songlin  Zhou Bo  Ye Qiang  Wang Hui  Guo Wangrui 《半导体学报》2010,31(4):045009-045009-5
Novel improved power metal oxide semiconductor field effect transistor (MOSFET) drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improve the transient response. An additional charging path is added to the N-channel power MOSFET drive circuit to enhance its drive capability and improve the transient response. The entire circuit is designed in a 0.6 μm BCD process and simulated with Cadence Spectre. Compared with traditional power MOSFET drive circuits, the simulation results show that improved P-channel power MOSFET drive circuit makes the rise time reduced from 60 to 14 ns, the fall time reduced from 240 to 30 ns, and its power dissipation reduced from 2 to 1 mW, while the improved N-channel power MOSFET drive circuit makes the rise time reduced from 360 to 27 ns and its power dissipation reduced from 1.1 to 0.8 mW.  相似文献   

18.
张强  倪卫宁  石寅  俞育德 《半导体学报》2012,33(10):105003-5
实现了一种应用于无线网络传感器的基于MOS管的AC/DC电荷泵,提出的AC/DC电荷泵在0.13μm公益平台实现能够提供稳定的工作电压,同时具有低功耗及高充电效率。电荷泵采用了具有低阈值(Vth)的MOSFET二极管,提高了转换效率。给出了电压倍增器的模型,仿真结果和芯片测试结果。  相似文献   

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