Reaction-Bonded and Superplastically Sinter-Forged Silicon Nitride–Silicon Carbide Nanocomposites

Silicon nitride–silicon carbide (Si₃N₄–SiC) nanocomposites were fabricated by a process involving reaction bonding followed by superplastic sinter-forging. The nanocomposites exhibited an anisotropic microstructure, in which rod-shaped, micrometer-sized Si₃N₄ grains tended to align with their long axes along the material-flow direction. SiC particles, typically measuring several hundred nanometers, were located at the Si₃N₄ grain boundaries, and nanosized particles were dispersed inside the Si₃N₄ grains. A high bending strength of 1246 ± 119 MPa, as well as a high fracture toughness of 8.2 ± 0.9 MPa·m^1/2, was achieved when a stress was applied along the grain-alignment direction.     

Fabrication of a Nano-Si3N4/Nano-C Composite by High-Energy Ball Milling and Spark Plasma Sintering

A nano-Si₃N₄/5 wt% nano-C composite was successfully fabricated for the first time via high-energy ball milling, followed by spark plasma sintering. The milling promoted the amorphization of the starting powders; most of the carbon particles were transformed into nano-size and embedded in the amorphous phase. This, combined with a low sintering temperature and a rapid densification rate, prevented the reactions between carbon and the other starting powders, leading to a uniform nano/nano-composite microstructure. Nano-sized carbon grains with an average diameter of about 10 nm were homogeneously dispersed in nano-sized (about 70 nm) Si₃N₄ grain boundaries. The hardness of the obtained nano-ceramics is comparable with that of conventional Si₃N₄, whereas Young's modulus is significantly decreased.     

Fabrication and Mechanical Properties of Silicon Carbide-Silicon Nitride Composites with Oxynitride Glass

A microstructure that consisted of uniformly distributed, elongated β-Si₃N₄ grains, equiaxed β-SiC grains, and an amorphous grain-boundary phase was developed by using β-SiC and alpha-Si₃N₄ powders. By hot pressing, elongated β-Si₃N₄ grains were grown via alpha right arrow β phase transformation and equiaxed β-SiC grains were formed because of inhibited grain growth. The strength and fracture toughness of SiC have been improved by adding Si₃N₄ particles, because of the reduced defect size and the enhanced bridging and crack deflection by the elongated β-Si₃N₄ grains. Typical flexural-strength and fracture-toughness values of SiC-35-wt%-Si₃N₄ composites were 1020 MPa and 5.1 MPam^1/2, respectively.     

Hydrothermal Corrosion of Pure, Hot Isostatically Pressed Silicon Nitride

The aqueous corrosion behavior of hot isostatically pressed Si₃N₄ (HIPed-Si₃N₄) without additives was studied under hydrothermal conditions at 300°C and 8.6 MPa (86 atm). The accelerated weight loss in the HIPed-Si₃N₄ was attributed to uniform thinning of the specimen accompanied by dislodgement of Si₃N₄ grains from the substrate due to preferential attack at grain boundaries. Enhanced attack at grain boundaries was due to the presence of amorphous SiO₂ from impurities in the starting powder.     

Impurity Phases in Hot-Pressed Si3N4

Impurity phases in commercial hot-pressed Si₃N₄ were investigated using transmission electron microscopy. In addition to the dominant, β-Si₃N₄ phase, small amounts of Si₂N₂O, SiC, and WC were found. Significantly, a continuous grain-boundary phase was observed in the ∼ 25 high-angle boundaries examined. This film is ∼ 10 Å thick between, β-Si₃N₄ grains and ∼ 30 Å thick between Si₂N₂O and β-Si₃N₄ grains.     

Comparison between SEM and TEM Imaging Techniques to Determine Grain-Boundary Wetting in Ceramic Polycrystals

Two different non-oxide ceramics, Si₃N₄ and SiC, were characterized with respect to their grain-boundary structure employing both scanning and transmission electron microscopy. The latter method, which enables one to gain direct insight of the atomistic interface structure, was utilized to verify whether grain-boundary wetting occurred. SEM imaging of plasma-etched surfaces revealed a characteristic bright contrast along interfaces for both ceramics, Si₃N₄ as well as SiC, suggesting the presence of an intergranular glass film. High-resolution TEM studies of the Si₃N₄ sample confirmed that these fine bright lines along grain boundaries represent intergranular glass films separating Si₃N₄ matrix grains. However, when high-resolution TEM was employed on SiC samples, which showed a similar contrast variation across SiC grain boundaries in the SEM, the presence of residual glass films was not detected. The SiC materials showed clean grain boundaries with no indication of residual glass even at triple pockets. Chemical analysis monitored yttrium and aluminum segregation at interfaces, which creates a potential barrier (space charges) and therefore affects both the inner mean potential at the interface (Fresnel fringes) and the plasma-etching response. Although SEM imaging showed a similar interface contrast for both Si₃N₄ and SiC ceramics, HRTEM studies clearly revealed grain-boundary wetting in the former and clean interfaces in the latter material, respectively. Hence, SEM imaging and Fresnel fringe TEM imaging alone are not conclusive when characterizing interface wetting in ceramic polycrystals.     

Change of Crystal Phases and Microstructure of Amorphous Si-C-N Powder by Hot Pressing

An amorphous Si-C-N powder with Y₂O₃ and Al₂O₃ powder as sintering additives was hot-pressed at 1900°C for 120 min in a nitrogen atmosphere. Changes in the crystalline phases and microstructure of the amorphous Si-C-N powder during sintering were investigated by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The defects at the fracture origins of the sintered bodies after bending tests also were investigated by scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). XRD showed that alpha-Si₃N₄ was formed initially from the amorphous Si-C-N by 1530°C, which then transformed to ß-Si₃N₄ at 1600°C. Also, a slight formation of crystalline SiC occurred during the transformation from alpha- to ß-Si₃N₄, and it increased after the transformation was completed at 1900°C. TEM revealed that many SiC nanoparticles were incorporated into ß-Si₃N₄ grains after the transformation from alpha- to ß-Si₃N₄ at 1600°C. They were located at the triple points of the grain boundaries of ß-Si₃N₄ after continued Si₃N₄ grain growth at 1900°C. Besides the SiC nanoparticles, large agglomerations of carbon or SiC particles of 20-60 µm size were observed by SEM and EPMA at the fracture origins of the sintered bodies after the bending tests.     

Mechanical Properties of Si3N4-SiC Three-Layer Composite Materials

The effects of microstructure and residual stress on the mechanical properties of Si₃N₄-based three-layer composite materials were investigated. The microstructure of each layer was controlled by the addition of two differently sized silicon carbides: fine SiC nanoparticles (∼200 nm) or relatively large SiC platelets (∼20 µm). When the SiC nanoparticles were added, the average grain size of Si₃N₄ was reduced because of the inhibition of grain growth by the particles. On the other hand, when the SiC platelets were added, the microstructure of Si₃N₄ was not much changed because of the large size of the platelets. Three-layer composites were fabricated by placing the Si₃N₄/SiC-nanoparticle layers on the surface of the Si₃N₄/SiC-platelet layer. The residual stress was controlled by varying the amount of SiC added. The mechanical properties of three-layer composites with various combinations of microstructure and residual stress level were investigated.     

Fabrication and Microstructure of Silicon Nitride/Boron Nitride Nanocomposites

A chemical process for fabrication of Si₃N₄/BN nanocomposite was devised to improve the mechanical properties. Si₃N₄/BN nanocomposites containing 0 to 30 vol% hexagonal BN ( h -BN) were successfully fabricated by hot-pressing α-Si₃N₄ powders, on which turbostratic BN ( t -BN) with a disordered layer structure was partly coated. The t -BN coating on α-Si₃N₄ particles was prepared by reducing and heating α-Si₃N₄ particles covered with a mixture of boric acid and urea. TEM observations of this nanocomposite revealed that the nanosized hexagonal BN ( h -BN) particles were homogeneously dispersed within Si₃N₄ grains as well as at grain boundaries. As expected from the rules of composites, Young's modulus of both micro- and nanocomposites decreased with an increase in h -BN content, while the fracture strength of the nanocomposites prepared in this work was significantly improved, compared with the conventional microcomposites.     

Amorphous Intergranular Films in Silicon Nitride Ceramics Quenched from High Temperatures

High-temperature microstructures of an MgO-hot-pressed Si₃N₄ and a Yb₂O₃+ Al₂O₃-sintered/annealed Si₃N₄ were obtained by quenching thin specimens from temperatures between 1350° and 1550°C. Quenching materials from 1350°C produced no observable changes in the secondary phases at triple-grain junctions or along grain boundaries. Although quenching from temperatures of ∼ 1450°C also showed no significant changes in the general microstructure or morphology of the Si₃N₄ grains, the amorphous intergranular film thickness increased substantially from an initial ∼ 1 nm in the slowly cooled material to 1.5–9 nm in the quenched materials. The variability of film thickness in a given material suggests a nonequilibrium state. Specimens quenched from 1550°C revealed once again thin (1-nm) intergranular films at all high-angle grain boundaries, indicating an equilibrium condition. The changes observed in intergranular-film thickness by high-resolution electron microscopy can be related to the eutectic temperature of the system and to diffusional and viscous processes occurring in the amorphous intergranular film during the high-temperature anneal prior to quenching.     

Local Viscosity of Si-O-C-N Nanoscale Amorphous Phases at Ceramic Grain Boundaries

Internal friction characterization has been used to quantitatively assess the viscosity characteristics of Si-O-C-N glasses segregated to nanometer-sized grain boundaries of polycrystalline Si₃N₄ and SiC ceramics. A relaxation peak of internal friction, which arises with rising temperature from the viscous sliding of glassy grain boundaries, was systematically collected and analyzed with respect to its shift upon changing the oscillation frequency. As a result of such an analysis, both activation energy for viscous grain-boundary flow and inherent viscosity of the intergranular glass film could be quantitatively evaluated. Two main features are shown: (i) the presence of N and/or C greatly affects the viscosity characteristics of SiO₂ phases at Si₃N₄ and SiC grain boundaries; and (ii) the internal friction method has potential as a unique experimental tool for understanding the local properties of nanoscale amorphous phases in new ceramic materials.     

Carbothermic Synthesis of Monodispersed Spherical Si3N4/SiC Nanocomposite Powder

The synthesis and structure of a monodispersed spherical Si₃N₄/SiC nanocomposite powder have been studied. The Si₃N₄/SiC nanocomposite powder was synthesized by heating under argon a spherical Si₃N₄/C powder. The spherical Si₃N₄/C powder was prepared by heating a spherical organosilica powder in a nitrogen atmosphere and was composed of a mixture of nanosized Si₃N₄ and free carbon particles. During the heat treatment at 1450°C, the Si₃N₄/C powder became a Si₃N₄/SiC composite powder and finally a SiC powder after 8 h, while retaining its spherical shape. The composition of the Si₃N₄/SiC composite powder changed with the duration of the heat treatment. The results of TEM, SEM, and selected area electron diffraction showed that the Si₃N₄/SiC composite powder was composed of homogeneously distributed nanosized Si₃N₄ and SiC particles.     

Characterization of Silicon Carbide–Silicon Nitride Composite Ultrafine Particles Synthesized Using a CO2 Laser by Silicon-29 Magic Angle Spinning NMR and ESR

The structure of silicon carbide–silicon nitride (SiC–Si₃N₄) composite particles synthesized using a CO₂ laser was studied by magic angle spinning nuclear magnetic resonance (MAS-NMR) and electron spin resonance (ESR). The structure around Si atoms changed by introducing N. C atoms around Si were substituted by N atoms, and N-rich configurations around Si atoms increased stepwise as the N content increased. The low N content composite particles consisted of mainly SiC phase containing dissolved N. N atoms were partly present in β-SiC microcrystal and partly in the grain boundary layer in the particle. N atoms were tetrahedrally surrounded by four Si atoms in β-SiC microcrystal and were trivalent state bonded to three Si atoms in the grain boundary layer. The high N content particles consisted of SiC, Si₃N₄, and amorphous phases, whose amount depended on N content.     

Highly Creep-Resistant Silicon Nitride/Silicon Carbide Nano–Nano Composites

A high creep resistance at specified temperature and compressive stress was obtained in this investigation in the silicon nitride/silicon carbide composite with a nano–nano structure (nanosized SiC and Si₃N₄ in dual-phase mixture) by a novel synthesis method. Starting from an amorphous Si–C–N powder derived from pyrolysis of a liquid polymer precursor, nanocomposites with varied grain size were achieved. With yttria additive amount decreasing from 8 to 1 wt% and eventually to zero, the structure underwent a transition from micro-nano (nano-sized SiC included in sub-micron Si₃N₄) to nano–nano type. Nanocrystalline silicon nitride/silicon carbide ceramic composite with 30–50 nm grain size was synthesized without using sintering additive.     

Fabrication and Microstructures of MoSi2 Reinforced–Si3N4 Matrix Composites

Details of the fabrication and microstructures of hot-pressed MoSi₂ reinforced–Si₃N₄ matrix composites were investigated as a function of MoSi₂ phase size and volume fraction, and amount of MgO densification aid. No reactions were observed between MoSi₂ and Si₃N₄ at the fabrication temperature of 1750°C. Composite microstructures varied from particle–matrix to cermet morphologies with increasing MoSi₂ phase content. The MgO densification aid was present only in the Si₃N₄ phase. An amorphous glassy phase was observed at the MoSi₂–Si₃N₄ phase boundaries, the extent of which decreased with decreased MgO level. No general microcracking was observed in the MoSi₂–Si₃N₄ composites, despite the presence of a substantial thermal expansion mismatch between the MoSi₂ and Si₃N₄ phases. The critical MoSi₂ particle diameter for microcracking was calculated to be 3 μm. MoSi₂ particles as large as 20 μm resulted in no composite microcracking; this indicated that significant stress relief occurred in these composites, probably because of plastic deformation of the MoSi₂ phase.     

Electron Microscopy Study of the Effect of Iron in Reaction-Sintered Silicoa Nitride

The microstructure, crystal structure, and chemical composition of reaction-sintered Si₃N₄ containing iron were studied using conventional and scanning transmission electron microscopy. It was found that the grains of β -Si₃N₄ were large and blocklike with well-developed facets, a series of voids along some grain boundaries, a subgrain of iron silicide near the periphery, and penetration of iron silicide into the three-grain junctions and grain boundaries. At some distance from each β -Si₃N₄ grain was a region of small α-Si₃N₄ grains, with no evidence of iron silicide. Between this region and the β -Si₃N₄ grain was a zone containing both α- and β -Si₃N₄ and iron silicide. These observations suggest that the large β -Si₃N₄ grains grow in liquid iron silicide, that the smaller α-Si₃N₄ grains grow from the vapor, and that the latter are converted to the β form by solution in, and reprecipitation from, liquid iron silicide.     

Microstructure and Mechanical Properties of Sinter–Post-HIPed Si3N4–SiC Composites

The microstructural evolution and mechanical properties of Si₃N₄–SiC composites obtained by the sinter–post-HIP process were investigated. SiC addition prohibited β-Si₃N₄ grain growth; however, the grain growth followed the empirical growth law, with exponents of 3 and 5 for the c - and the a -axis directions, respectively. Mechanical properties were strongly influenced by SiC addition and sintering conditions. Short-crack propagation behavior was measured and analyzed by the indentation-strength in-bending (ISB) method. The present composites had high short-crack toughness, compared with the values for monolithic Si₃N₄. The enhanced short-crack toughness was attributed to crack-tip bridging by the SiC particles.     

Effect of Grain Size on the Thermal Conductivity of Si3N4

Polycrystalline Si₃N₄ samples with different grain-size distributions and a nearly constant volume content of grain-boundary phase (6.3 vol%) were fabricated by hot-pressing at 1800°C and subsequent HIP sintering at 2400°C. The HIP treatment of hot-pressed Si₃N₄ resulted in the formation of a large amount of ß-Si₃N₄ grains ∼10 µm in diameter and ∼50 µm long, and the elimination of smaller matrix grains. The room-temperature thermal conductivities of the HIPed Si₃N₄ materials were 80 and 102 Wm⁻¹K⁻¹, respectively, in the directions parallel and perpendicular to the hot-pressing axis. These values are slightly higher than those obtained for hot-pressed samples (78 and 93 Wm⁻¹K⁻¹). The calculated phonon mean free path of sintered Si₃N₄ was ∼20 nm at room temperature, which is very small as compared to the grain size. Experimental observations and theoretical calculations showed that the thermal conductivity of Si₃N₄ at room temperature is independent of grain size, but is controlled by the internal defect structure of the grains such as point defects and dislocations.     

Texture Development in Silicon Nitride–Silicon Oxynitride In Situ Composites via Superplastic Deformation

Silicon nitride–silicon oxynitride (Si₃N₄–Si₂N₂O) in situ composites have been fabricated via either the annealing or the superplastic deformation of sintered Si₃N₄ that has been doped with a silica-containing additive. In this study, quantitative texture measurements, including pole figures and X-ray diffraction patterns, are used in conjunction with scanning electron microscopy and transmission electron microscopy techniques to examine the degree of preferred orientation and texture-development mechanisms in these materials. The results indicate that (i) only superplastic deformation can produce strong textures in the β-Si₃N₄ matrix, as well as Si₂N₂O grains that are formed in situ ; (ii) texture development in the β-Si₃N₄ matrix mainly results from grain rotation via grain-boundary sliding; and (iii) for Si₂N₂O, a very strong strain-dependent texture occurs in two stages, namely, preferred nucleation and anisotropic grain growth.     

Fabrication of Low-Shrinkage, Porous Silicon Nitride Ceramics by Addition of a Small Amount of Carbon

Successful net-shape sintering offers a significant advantage for producing large or complicated products. Porous Si₃N₄ ceramics with very low shrinkage were developed, in the present investigation, by the addition of a small amount of carbon. Carbon powders (1–5 vol%) of two types, with different mean particle sizes (13 nm and 5 μm), were added to α-Si₃N₄−5 wt% Y₂O₃ powders. SiC nanoparticles formed through reaction of the added carbon with SiO₂ on the Si₃N₄ surface or with the Si₃N₄ particles themselves. Such reaction-formed SiC nanoparticles apparently had an effective reinforcing effect, as in nanocomposites. Sintered Si₃N₄ porous ceramics with a high porosity of 50%–60%, a very small linear shrinkage of ∼2%–3%, and a strength of ∼100 MPa were obtained.