SU—8的紫外深度光刻模拟

在微电子机械系统（MEMS）中，大高宽比微结构被广泛应用，由于紫外光衍射效应比较大，通过紫外光刻获得高精度的大高度微结构并不容量，本主要研究了衍射效应对深紫外光刻精度的影响，并与实验结果进行了比较，理论模拟结果和实验比较吻合，因此，通过模拟结果得到不同厚度光刻胶的最佳曝光剂量，以便得到更好的微结构图形。     

接近式光刻图形失真的部分相干光理论分析

光刻过程中由于光的衍射效应产生的非线性畸变对光刻面形质量具有严重影响,是造成光刻微结构图形失真的主要原因之一,为此,研究了接近式紫外光刻中部分相干光的传播过程,建立了相应的光刻理论模型,对光刻成像中的误差产生机理进行分析．该模型综合考虑光源和照明系统对掩模微结构附近光场相干性的影响,将光刻模拟分为3部分．首先根据VanCittert-Zernike定理确定了光源经扩束准直系统传播到蝇眼透镜入射面时光场上任2点的互强度．然后应用部分相干光的传播理论,由Hopkins公式得到部分相干光经蝇眼透镜传播到掩模平面后其上任一点对的复相干度的分布规律．最后根据互强度传播定律,分析从掩模面到光刻胶表面的衍射效应,得到光刻胶表面的光强分布及变化规律,并且通过误差的仿真分析模拟得到光刻胶图形轮廓．结果表明,理论模拟结果与实验较为吻合．该方法能准确地得到衍射光场的分布,进行光刻误差分析,从而能较好地发现曝光图形缺陷．     

砂浆材料SHPB实验及惯性效应的数值模拟研究

进行了砂浆材料在不同应变率下的SHPB实验,拟合实验数据得到了动态强度放大因子DIF随应变率变化的关系曲线。基于实验测得应变率时程曲线,采用简化有限元模型,对实验进行了数值模拟。该文探讨了动态压缩实验中惯性效应产生的原因,并基于数值模拟对本实验中惯性效应对材料动态强度的影响进行了剥离,得到了砂浆材料动态强度放大因子随应变率变化的固有特性曲线,并将该固有特性曲线作为数值模拟中应变率效应的输入,计算结果与实验得到的应力-应变曲线吻合较好。进一步通过比较输入CEB推荐曲线和已有半经验公式的模拟结果,验证了所提出砂浆材料动态强度放大因子固有特性曲线的优越性。     

纳焦飞秒激光在有机材料表面刻划微结构光栅的研究

使用振荡器产生的飞秒激光在透明有机材料PMMA表面进行了刻划微结构光栅的研究．通过理论分析得到了飞秒激光参数和平台移动速度对线宽的影响，进行了系统的加工实验，加工结果与理论分析基本吻合．在透明有机材料PMMA表面进行了多种光栅的刻划，并对刻划的光栅进行了衍射和色散测试，调整光栅的尺寸和排列方式，得到了形状各异的衍射图案。     

等温准热压印中聚合物微结构成型的分析

在传统平板微热压印中,模具需要反复的加热和冷却,工艺循环时间长,存在微结构成型效率低的缺点。文中创新性地提出一种等温准热压印工艺,可有效解决这一问题。首先在研究此工艺原理的基础上,采用有限元模拟的手段探究聚合物微结构的成型过程。模拟分析可知,聚合物微结构的成型是边冷却边压印的过程,模具温度显著影响微结构的复制精度;而聚合物基片预热温度过高不会提高微结构的复制精度,却增加了脱模缺陷的可能性。模拟得到的规律可为等温准热压印实验工艺参数的选取提供依据。最后通过实验验证了模拟规律的正确性及工艺的可行性。     

沉积温度为室温和560 ℃的Nb/Si多层膜微结构研究

对多靶离子溅射制备的Nb/Si周期多层膜的微结构进行了实验研究。利用X射线衍射和截面透射电子显微镜观测到室温和 56 0℃沉积的Nb/Si多层膜为非晶多层膜 ,但它们的微结构有很大的不同。采用沉积原子表面活动性和界面反应程度解释了所得到的结果。     

远紫外光刻的实验研究

本文介绍了与远紫外光刻有关的光源、抗蚀剂、透射材料和光掩模,详细地阐述了远紫外光刻工艺及其特性。并给出远紫外光刻亚微米级图形的电镜扫描照片结果。     

远紫外抗蚀剂发展动向

远紫外光刻技术的开发背景集成电路在国际范围内的发展非常迅速,目前已向超大规模和超高速集成电路发展,这就要求光刻的线条越来越细.大家知道,常规紫外(350～450nm)光刻技术,虽然在理论上的极限分辨率可达0.7μm,但由于光的衍射、反射效应,实际上只能光刻     

离子束刻蚀工艺误差对DOE器件的影响

针对衍射光学元件(DOE)的离子束刻蚀工艺,结合掩模套刻过程实例,本文提出了刻蚀误差面形分布的概念.在标量衍射的夫琅和费原理上,进行了误差数值模拟分析及讨论.模拟分析和实验数据结果表明,误差的面形分布在DOE器件的衍射焦斑中心会产生一个明显的光强畸变毛刺亮点,严重破坏了靶场照明的均匀性.     

沉积温度为室温和560℃的Nb／Si多层膜微结构研究

对多靶离子溅射制备的Ｎｂ／Ｓｉ周期多层膜的微结构进行了实验研究。利用Ｘ射线衍射和截面透射电子显微镜观测到室温和５６０℃沉积的Ｎｂ／Ｓｉ多层膜为非晶多层膜，但它们的微结构有很大的不同。采用沉积原子表面活动性和界面反应程度解释了所得到的结果。     

Nanolithography using spin-coatable ZrO(2) resist and its application to sub-10 nm direct pattern transfer on compound semiconductors

A typical method for sub-micrometer compound semiconductor dry etching utilizes polymethylmethacrylate?(PMMA) to transfer patterns to SiO(2) as intermediate masks, which limits its ability to obtain etching resolutions approaching sub-10?nm. We report a new approach for direct sub-10?nm pattern transfer using sol-gel derived spin-coatable ZrO(2) resist as the mask. The optimal dose of ZrO(2) resist is ～160?mC?cm(-2). The sample InP compound semiconductor etching selectivity to ZrO(2) is over 13:1, with high aspect ratio of 35:1. The smallest etching feature is 9?nm. These results will be very useful for realizing various challenging nanoscale photonic and electronic devices and circuits.     

Auxiliary drying to prevent pattern collapse in high aspect ratio nanostructures

Many defects are generated in densely packed high aspect ratio structures during nanofabrication. Pattern collapse is one of the serious problems that may arise, mainly due to the capillary force during drying after the rinsing process. In this paper, a method of auxiliary drying is presented to prevent pattern collapse in high aspect ratio nanostructures by adding an auxiliary substrate as a reinforcing rib to restrict deformation and to balance the capillary force. The principle of the method is presented based on the analysis of pattern collapse. A finite element method is then applied to analyze the deformation of the resist beams caused by the surface tension using the ANSYS software, and the effect of the nanostructure's length to width ratio simulated and analyzed. Finally, the possible range of applications based on the proposed method is discussed. Our results show that the aspect ratio may be increased 2.6 times without pattern collapse; furthermore, this method can be widely used in the removal of solvents in micro- and nanofabrication.     

High aspect ratio via etch development for Cu nails in 3-D-stacked ICs

In this study the etch development of high aspect ratio vias in Si for the fabrication of Cu nails is described. To enable subsequent metallisation, these vias need to meet strict requirements with respect to uniformity, slope, sidewall roughness and undercut. For aspect ratios up to 5 a SiO₂ hard mask based SF6/O₂ etch approach is used. For aspect ratios up to 10, a resist based passivation polymer type etch approach with C4F8/SF6 was used to successfully pattern vias in Si. Typical problems of this process and optimization to overcome the issues are described.     

Introduction of zirconium oxide in a hardmask concept for highly selective patterning of scaled high aspect ratio trenches in silicon

The fabrication of high aspect ratio silicon trenches (critical dimension < 100 nm, aspect ratio > 10:1) by dry etch processing has proven to be a challenge mainly due to limited etch selectivity of conventional hardmask materials to Si. Moreover, for future technology nodes the hardmask thickness will be limited by the thickness of the photoresist. This work focuses on a concept to enable the usage of very thin resist layers (< 100 nm) for patterning of silicon trenches by the integration of an unconventional hardmask stack consisting of SiO₂ and ZrO₂. Deposition of such material films has been investigated, as well as e-beam lithography exposure and finally pattern transfer by dry etching. Using this hardmask stack and 100 nm thin resist, the fabrication of 35 nm wide trenches with an aspect ratio of ~ 20:1 is demonstrated revealing a very high selectivity (> 100:1) of the ZrO₂ layer to Si during the deep silicon etch. A silicon etch rate > 1.5 μm/min was achieved. The ZrO₂ layer itself provides the main selectivity improvements of the final hardmask stack.     

基于节段模型测振试验的大跨度桥梁抖振响应预测

传统大跨度桥梁抖振响应计算是基于颤抖振理论,并借助节段模型测压或测力试验进行,目前鲜有通过节段模型测振试验实现桥梁抖振响应预测的报道。基于抖振分析理论推导了考虑三维效应的两波数抖振力,并根据综合传递函数的概念提出了基于节段模型测振试验的大跨度桥梁抖振响应预测方法。以某流线型箱梁悬索桥为例,通过节段模型及全桥气弹模型试验研究了该预测方法的精度及可行性。结果表明:结构展宽比对综合传递函数识别精度存在影响,展宽比越大,识别精度越高。即使在湍流积分尺度并未远大于结构宽度的前提下,增大模型展宽比可有效减弱三维效应的影响。基于节段模型测振试验识别综合传递函数的方法可用于大跨度桥梁抖振响应的预测,该方法预测结果偏于保守。     

Condensation heat transfer and pressure drop in flattened microfin tubes having different aspect ratios

In this study, condensation heat transfer coefficients and pressure drops of R-410A are obtained in flattened microfin tubes made from 7.0 mm O.D. round microfin tubes. The test range covers saturation temperature 45 °C, mass flux 100–400 kg m⁻² s⁻¹ and quality 0.2–0.8. Results show that the effect of aspect ratio on condensation heat transfer coefficient is dependent on the flow pattern. For annular flow, the heat transfer coefficient increases as aspect ratio increases. For stratified flow, however, the heat transfer coefficient decreases as aspect ratio increases. The pressure drop always increases as aspect ratio increases. Possible reasoning is provided based on the estimated flow pattern in flat microfin tubes. Comparison with existing round microfin tube correlations is made.     

Study of a chemically amplified resist for X-ray lithography by Fourier transform infrared spectroscopy

Future applications of microelectromechanical systems (MEMS) require lithographic performance of very high aspect ratio. Chemically amplified resists (CARs) such as the negative tone commercial SU-8 provide critical advantages in sensitivity, resolution, and process efficiency in deep ultraviolet, electron-beam, and X-ray lithographies (XRLs), which result in a very high aspect ratio. In this investigation, an SU-8 resist was characterized and optimized for X-ray lithographic applications by studying the cross-linking process of the resist under different conditions of resist thickness and X-ray exposure dose. The exposure dose of soft X-ray (SXR) irradiation at the average weighted wavelength of 1.20 nm from a plasma focus device ranges from 100 to 1600 mJ/cm(2) on the resist surface. Resist thickness varies from 3.5 to 15 mum. The cross-linking process of the resist during post-exposure bake (PEB) was accurately monitored using Fourier transform infrared (FT-IR) spectroscopy. The infrared absorption peaks at 862, 914, 972, and 1128 cm(-1) in the spectrum of the SU-8 resist were found to be useful indicators for the completion of cross-linking in the resist. Results of the experiments showed that the cross-linking of SU-8 was optimized at the exposure dose of 800 mJ/cm(2) for resist thicknesses of 3.5, 9.5, and 15 microm. PEB temperature was set at 95 degrees C and time at 3 min. The resist thickness was measured using interference patterns in the FT-IR spectra of the resist. Test structures with an aspect ratio 3:1 on 10 microm thick SU-8 resist film were obtained using scanning electron microscopy (SEM).     

Step and repeat UV nanoimprint lithography on pre-spin coated resist film: a promising route for fabricating nanodevices

A step and repeat UV nanoimprint lithography process on pre-spin coated resist film is demonstrated for patterning a large area with features sizes down to sub-15 nm. The high fidelity between the template and imprinted structures is verified with a difference in their line edge roughness of less than 0.5 nm (3σ deviation value). The imprinted pattern's residual layer is well controlled to allow direct pattern transfer from the resist into functional materials with very high resolution. The process is suitable for fabricating numerous nanodevices.     

Scanning Nanowelding Lithography for Rewritable One‐Step Patterning of Sub‐50 nm High‐Aspect‐Ratio Metal Nanostructures

The development of a new nanolithographic strategy, named scanning nanowelding lithography (SNWL), for the one‐step fabrication of arbitrary high‐aspect‐ratio nanostructures of metal is reported in this study. Different from conventional pattern transfer and additive printing strategies which require subtraction or addition of materials, SNWL makes use of a sharp scanning tip to reshape metal thin films or existing nanostructures into desirable high‐aspect‐ratio patterns, through a cold‐welding effect of metal at the nanoscale. As a consequence, SNWL can easily fabricate, in one step and at ambient conditions, sub‐50 nm metal nanowalls with remarkable aspect ratio >5, which are found to be strong waveguide of light. More importantly, SNWL outweighs the existing strategies in terms of the unique ability to erase the as‐made nanostructures and rewrite them into other shapes and orientations on‐demand. Taking advantages of the serial and rewriting capabilities of SNWL, the smart information storage–erasure of Morse codes is demonstrated. SNWL is a promising method to construct arbitrary high‐aspect‐ratio nanostructure arrays that are highly desirable for biological, medical, optical, electronic, and information applications.     

Proton beam writing of three-dimensional nanostructures in hydrogen silsesquioxane

Proton beam writing (p-beam writing) is a promising new direct-write lithographic technique for three-dimensional nanofabrication. In p-beam writing a megaelectronvolt proton beam is focused to a sub-100-nm spot size and scanned over a suitable resist material. Unlike electrons, when a proton beam interacts with resist it follows an almost straight path resulting in high aspect ratio structures with vertical, smooth sidewalls. The secondary electrons induced by the primary proton beam have low energy and therefore limited range, resulting in minimal proximity effects. Hydrogen silsesquioxane has been identified as a superior resist for p-beam writing, allowing the production of high-aspect-ratio structures down to 22 nm.