Evaluation of the bonded silicon on insulator (SOI) wafer and thecharacteristics of PIN photodiodes on the bonded SOI wafer

Electrical properties of the bonded silicon on insulator (SOI) wafer and characteristics of PIN photodiodes fabricated on the SOI layer were evaluated. A trap with deep energy level (about Ec-Et=0.55 eV) was observed in the SOI layer with 100 μm- and 30 μm-thickness using the deep level transient spectroscopy (DLTS) method. No trap was detected in the SOI layer with 10 μm-thickness. This deep trap was not observed before the wafer bonding process and thus the trap is generated during the wafer bonding process. From primary mode lifetime (τ₁) measurements, it is considered that the trap will works as the generation center or the recombination center. For PIN photodiodes on the SOI layer in which the trap was detected, the increases of dark current were observed. Spectral responses of photodiodes on the SOI layer were almost the same as that on the normal FZ-Si wafer. We fabricated PIN photodiodes with good spectral response     

基于HV-CMOS工艺集成PIN光敏元的CMOS传感器设计

PIN光电二极管相对于pn结型光电二极管具有结电容小、量子效率高等优点,但采用标准低压CMOS(LV-CMOS)工艺研制的CMOS传感器只能实现基于n阱/p衬底的pn结光敏元与片上电路的集成,高压CMOS(HV-CMOS)工艺的发展为CMOS电路与PIN光敏元列阵的单片集成提供了可能。基于HV-CMOS工艺设计了一种集成PIN光敏元列阵的CMOS传感器,并对器件的光电响应进行了测试评估。结果表明,集成PIN光敏元的CMOS传感器具有更高的像素增益和量子效率,而暗电流、输出摆幅、线性度等特性保持良好。在500~900nm宽波段范围内,器件的量子效率均达到80%以上,在950nm附近的量子效率达到25%,优于采用其他工艺制作的CMOS传感器。     

实用型5GHz带宽InGaAs／InP PIN光电探测器

设计并研制成功了实用型５ＧＨｚ带宽ＩｎＧａＡｓ／ＩｎＰ ＰＩＮ光电探测器，介绍了限制探测器响应速度的主要因素，微波封装的理论依据，以及所研制器件频率响应的测试结果。     

Monolithic InGaAs photodiode array illuminated through an integrated waveguide

A linear array of InGaAs PIN photodiodes has been fabricated which can be illuminated through a slab waveguide from the opposite side of the InP substrate via total reflection at a V-groove mirror. Absorption losses in the double-heterostructure waveguide are 2.5 dB/cm. The internal quantum efficiency of the photodiodes, including the mirror loss, is 87%, and an optical crosstalk between the diodes better than ?40 dB was measured.     

Electron transit time of PIN photodiodes fabricated in two-valley semiconductors

Electron transit time was calculated for a PIN photodiode with the absorption layer realized in two-valley semiconductor (GaAs, InGaAs...). Non-stationary effects and changes of the electric field along the layer result in a dependence of the electron transit time on both the applied voltage and the thickness of the layer. This dependence shows marked maximum and minimum, which could be important when modelling the response times of PIN photodiodes fabricated in these materials.     

MBE生长的PIN结构碲镉汞红外雪崩光电二极管

对中波红外碲镉汞雪崩光电二极管(APD)特性进行理论计算,获得材料的能量散射因子及电离阈值能级与材料特性的相互关系,从而计算器件的理论雪崩增益与击穿电压.通过对材料特性(组分,外延厚度,掺杂浓度等)的优化,设计并生长了适合制备PIN结构红外雪崩光电二极管的碲镉汞材料,并进行了器件验证.结果显示,在10V反偏电压下,该器件电流增益可达335.     

High-speed, self-passivated InGaAs PIN photodiode for microwave fibre links

High-speed, low-dark-current, front-side-illuminated InGaAs PIN photodiodes with a self-passivated-mesa structure have been fabricated on semi-insulating InP substrates. These detectors have a nearly flat frequency response beyond 22GHz. Their quantum efficiency is 65% without AR coating and the dark current is about 5nA at ?10V.     

High-temperature aging tests on planar structure InGaAs/InP PIN photodiodes with Ti/Pt and Ti/Au contact

Planar structure InGaAs/InP PIN photodiodes having low dark current and low junction capacitance characteristics were reproducibly fabricated by using VPE wafers. Bias/temperature life testings for the diodes showed that there were no significant degradations after 5500 h aging at 250°C and 10 V reverse bias by adopting the Ti/Pt and Ti/Au metals for the p-side contact.     

Balanced dual-detector receiver for optical heterodyne communication at Gbit/s rates

A balanced dual-detector receiver which requires low local-oscillator power has been designed and fabricated for optical heterodyne detection at 1·5 ?m wavelength and Gbit/s rates. The receiver consists of two InGaAs PIN photodiodes connected with opposite polarities to a high-impedance GaAs FET amplifier. Frequency response, noise suppression and noise spectrum measurements are reported.     

GaInAs PIN photodiodes grown by atmospheric-pressure MOVPE

GaInAs/InP PIN photodiodes with low dark currents and capacitances have been successfully fabricated from material grown by atmospheric-pressure MOVPE. Both Zn-diffused and grown-in p+-n homojunction material have provided yields of over 70% for devices with leakage currents less than 20 nA. This growth technique, therefore, looks particularly appropriate for a reproducible, high-yield and inexpensive method of photodetector production.     

Molecular beam epitaxy of AlGaInAs on patterned InP substrates for optoelectronic applications

In this paper, we present the potentiality of the AlGaInAs quaternary alloy system grown by molecular beam epitaxy on non-planar InP substrates. Cross-sectional scanning electron microscopy pictures were used to study the growth behaviour of such a system on various etched profiles achieved by either wet chemical etching or reactive ion etching: V-groove, mesa or rectangular well. A recess surface preparation procedure prior to regrowth was optimized. Embedded PIN photodiodes were fabricated with similar characteristics as those obtained on planar commercial substrates. Planar monolithic integrated PIN-pair and PIN-HFET have also been fabricated.     

Power penalty due to decision-time jitter in receivers using avalanche photodiodes

Power penalties on receiver sensitivity due to the presence of timing jitter are derived for receivers incorporated with PIN detectors and with avalanche photodiodes. It is shown that the presence of timing jitter will lower the optical gain of the avalanche photodiodes and will reduce the improvement in receiver sensitivity of using avalanche photodiodes over PIN detectors. Using computer simulation on results of transmission experiments it is shown that the receiver sensitivity can be degraded by several decibels owing to the presence of timing jitter in the Anritsu pulse pattern generator and/or error detector.     

Temperature,Current, and Voltage Dependences of Junction Failure in PIN Photodiodes

A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of 190°C, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.     

Blue-Enhanced PIN Finger Photodiodes in a 0.35-$mu{hbox {m}}$ SiGe BiCMOS Technology

Finger photodiodes in PIN technology are introduced to enhance the responsivity for blue and ultraviolet light. A thick low doped epitaxial layer results in high responsivity and high bandwidth also for red and near-infrared light. Results of PIN finger photodiodes are compared to that of PIN photodiodes for 10- and 15-mum epitaxial intrinsic layer thickness. The cathode finger structure results in a high responsivity of 0.20 A/W (quantum efficiency 61%) for 410-nm light and a bandwidth of 1.25 GHz for 10- mum epi thickness at a reverse bias voltage of 3 V. The rise and fall times with an epitaxial layer thickness of 15 mum are below 1 ns for the wavelength range from 410 to 785 nm.     

长波长InGaAs扩散结PIN光电二极管正面入光结构的理论分析

本文指出,对扩散pn结的正面入光结构,突变结理论有一定局限性。由于p~+区内杂质浓度的分布,在扩散区中存在十分强的自建漂移场,因而光生载流子将在自建场的作用下漂移进pn结内。由于载流子的漂移速度V_d远大于扩散速度V_f,因此可制得性能优异的PIN光电二极管,制作工艺比背面入光结构简单。已制得光电响应时间低达80ps的正面入光PIN二极管。     

近红外InGaAs探测器台面结构对器件性能的影响

采用湿法腐蚀方式在PIN型InP/In0.53Ga0.47As/InP材料上制备了不同台面结构的正照射In0.53Ga0.47As探测器,通过比较不同结构器件的性能,如暗电流、信号、噪声,研究了器件性能跟器件结构之间的关系,并分析影响器件性能的因素。研究结果表明,探测器的暗电流、噪声与台面面积是成线性关系的,而信号与台面面积则不是线性关系。探测器的台面可分为光敏区和光敏区外部分,光敏区外部分对暗电流、噪声的贡献与光敏区是一致的,但对信号的贡献这两部分则是不一致的,这主要是由于衬底反射和器件之间的沟道光生载流子的侧向扩散所造成的。     

A 2 km Optical Fiber Communication Trial

This paper describes a recent field trial of an optical fiber communication link. The fixed point-to-point full duplex link used low loss multi-mode fibers fabricated by the CVD process in a simple cable structure. Fiber loss was approximately 4 dB/km before cabling and up to 7 dB/km after cabling. Digital 5 Mbit/s throughput TDM terminals were used to multiplex a variety of signal sources, including voice and data onto the fibers. Cabled fiber losses over 2.3 km were low enough to permit the use of incoherent infrared LED's as sources and silicon PIN photodiodes as receivers. 'Vee' groove splices were employed to connect fibers in the field. Installation was by standard cable laying techniques and no special problems were encountered.     

Improved resolution method to study at 3D the conduction phenomena inside GaAs PIN photodiode

GaAs PIN photodiodes are presently receiving much attention for low-noise photoreceivers. In this paper, specific feature of GaAs-based PIN photodiodes are given, in particular on the investigation of the GaAs properties. In order to show the potentialities of the GaAs PIN photodiode, a three-dimensional resolution and simulation are realized. The simulation adopted the drift-diffusion model applied to transport equations for semiconductor P⁺-ν-N⁺ structure under illumination. The generation term is the function of the incidental flow, reflection, and absorption coefficients. We developed subroutines in the simulation program (SIM 3D) attended for the simulation of the transport phenomena inside the PIN structure using the combined Newton-Gummel method, which uses the electrostatics potentials and the normal variables. These programs are implemented in the simulator to simulate the conduction inside the GaAs PIN photodiode. The model is applied on the carriers’ minority at high injection. The electric field and the photocurrent are then calculated. At the end we have characterized electrically the PIN photodiode from the results of the simulation, to show its band-width and then its domain of use.     

PIN avalanche photodiodes model for circuit simulation

A circuit model of PIN avalanche photodiodes (APD's) based on the carrier rate equations for circuit simulation is presented. This model is for dc, ac, and transient analysis. As an example, an In_0.53 Ga_0.47As-InP PIN APD is simulated     

LED linearisation for video bandwidth transmission employing a monolithically integrated PIN-PD

Nonlinear distortion and frequency response for light-emitting diodes in analogue video transmission are greatly improved by using a wideband optoelectronic feedback loop employing monolithically integrated PIN photodiodes. Large monitoring efficiency of more than 2% makes it easy to realise this wideband and high-gain feedback loop.