Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy

High quality InAs_1−xSb_x semiconductor films were successfully grown on (100) GaSb single crystal substrates using liquid phase epitaxy technique (LPE). The crystalline structure and lattice mismatch between film and substrate were investigated by high-resolution X-ray diffraction (HRXRD). The surface roughness and the interface morphology of the epitaxial film-on-substrate were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy. These results show the high-purity InAs_1−xSb_x epitaxial layers with mirror-like surface and rms ranges from 0.5 to 2 nm, and a sharp interface between substrate and ternary film. The optical properties of the layers were studied by low temperature photoluminescence (PL) spectroscopy. PL spectrum of the ternary film shows one radiative emission peak with narrow full width at half-maximum, which is an evidence of the good crystalline quality of the epilayer. It is worth to mention that the InAsSb films were grown on GaSb substrates for compositions of Sb with x=0.16 without introducing any intermediate composition buffer layer between the GaSb substrate and the film as reported in previous works.     

Structural, electrical and magnetic characterizations of Ni/Cu/p-Si Schottky diodes prepared by liquid phase epitaxy

In this paper, we have investigated the structural, electrical and magnetic characterizations of Ni/Cu/p-Si Schottky diode prepared by liquid phase epitaxy (LPE). Current density-voltage (J-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements were performed to determine the conduction mechanisms as well as extracting the important diode parameters. Rectifying properties were obtained, which definitely of the Schottky diode type. At low voltages, (0 < V ? 0.4 V), current density in the forward direction was found to obey the diode equation, while for higher voltages, (0.5 < V ? 1.5 V), conduction was dominated by a space-charge-limited conduction (SCLC) mechanism. Analysis of the experimental data under reverse bias suggests a transition from electrode-limited to a bulk-limited conduction process for lower and higher applied voltages, respectively. Diode parameters such as, the built-in potential, V_b, the carrier concentration, N, the width of the depletion layer, W, of the Ni/Cu/p-Si Schottky diode were obtained from the C-V measurements at high frequency (1 MHz). The capacitance-frequency measurements showed that the values of capacitance were highly frequency dependent at low frequency region but independent at high frequencies. The Ni/Cu/p-Si Schottky diode showed magnetic properties due to the effect of Ni in the heterostructure.     

Quantum-well Inp-Inl−xGaxPl−zAsz heterostructure lasers grown by liquid phase epitaxy (LPE)

By means of computer-controlled liquid-phase epitaxy (LPE), undoped single-and multiple-quantum-well InP-In_l-xGa_xP_l-zAs_z (x∼0.13, z∼0.29) heterostructures of uniform well (Lz∼150 ?) and coupling barrier size (200–300? ) have been grown and examined in photolumi-nescence. Undoped samples are used to eliminate problems with impurities and to make possible study of the fundamental properties of quaternary quantum-well heterostructures. For a single quaternary quantum-well heterostructure of small enough well size (Lz∼150?), which still collects holes but not electrons (electron scattering length >L_Z), hot-electron (p²/2m_n∼ΔE_c) recombination from E_c(InP) to bound holes in the valence-band well (i.e., to E_v(InGaPAs)), leads to stimulated emission in a band ∼ 80 meV below E_g(InP) and thus to an estimate of Δ E_v∼ 80 meV (ΔE_c∼2×ΔE_v) for the InP-InGaPAs valence-band discontinuity. On rectangular samples of multiple quantum-well LPE InP-In_1-xGa_xP_1-zAs_z heterostructures laser operation has been identified on LO phonon sidebands located below the lowest confined-particle transitions. A 5-barrier, 6-well quaternary quantum-well heterostructure exhibits phonon-assisted laser operation shifted in energy below confined-particle transitions by an InGaAs-like phonon (ˉhω_L0∼31 meV) and for an 11-barrier, 12-well heterostructure shifted by an InP-like phonon (ˉhω_L0∼43 meV). The 11+12 quaternary quantum-well heterostructure is shown to be capable of operating as a room temperature continuous (CW, 300K) laser (ˉhω<E_g ) .     

Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

We investigated silicon carbide (SiC) epitaxial layers grown by liquid phase epitaxy (LPE). The layers were grown on 6H-SiC and 4H-SiC well-oriented (0001) 35 mm diameter commercial wafers as well as on 6H-SiC Lely crystals. A few experiments were also done on off-axis 6H-SiC and 4H-SiC substrates. Layer thickness and growth rate ranged from 0.5 to 50 microns and 0.5 to 10 μm/h, respectively. Layers were investigated by x-ray diffraction, x-ray topography, and selective chemical etching in molten KOH. It was found that dislocation and micropipe density in LPE grown epitaxial layers were significantly reduced compared with the defect densities in the substrates.     

Al-Ga-As-dopant phase-equilibria for liquid phase epitaxy

Calculated phase data for the Al-Ga-As-dopant liquid phase epitaxial system are presented. Modifications to interaction parameters are made. Firstly, the activity coefficient of the ternary solid phase has been taken as unity, i.e., solid solution AlGa-AlAs is assumed ideal, which permits the elimination of discontinuities when aluminum atomic fraction in the liquid goes to zero. Accordingly, the Al-As interaction parameter must be recalculated and a value of 2122-14T cal/mole (from 973 to 1273°K) has been obtained. With these changes in the interaction parameters, the model allows a fairly accurate fit to the solidus and liquidus data, and former problems associated with high temperatures and high and low aluminum atomic concentrations in the liquid have been resolved. Finally, the theory is extended to the case of a fourth component which acts as a dopant. Tin is taken as an example. Interaction parameters for this dopant have been calculated permitting a close adjustment to the experimental values. In order to achieve a more precise fitting an aluminum dependence in the Al-Sn interaction parameter is suggested.     

The preparation of CdSnP2/InP heterojunctions by liquid phase epitaxy from Sn-solution

Heterojunctions of n-type CdSnP₂ on p-type InP substrates are prepared by LPE from Sn-solutions. The significance of the tipping arrangement, of the initial solution composition and of the temperature program for preparing LPE layers of high quality is discussed. Heterodiodes cleaved from such LPE wafers electroluminesce under forward bias between 1 μm and 1.8 %m with internal quantum efficiencies approaching 1.8% at room temperature. When used as photovoltaic detectors, the quantum efficiency of these diodes surpasses that of Si for λ > 1.09 μ, and exceeds 1% for all wave-lengths between 0.96 and 1.3 μ.     

Energy-Band offsets and electroluminescence in n-InAs1-xSb1-x/N-GaSb heterojunctions grown by liquid phase epitaxy

Isotype heterojunctions of n-InAsSb/N-GaSb were grown by liquid phase epitaxy from Sb-solution. The current-voltage and capacitance-voltage characteristics of these structures were investigated. Valence band and conduction band offsets were measured to be AEv = 0.40 eV and AEc = 0.84 eV, respectively, in good agreement with theory. Electroluminescence emission at 4 am from these isotype heterojunction diodes is reported for the first time. The injection mechanisms determining luminescence efficiency are also briefly discussed.     

CdZnTe substrate impurities and their effects on liquid phase epitaxy HgCdTe

Impurity levels were tracked through the stages of substrate and liquid phase epitaxy (LPE) layer processing to identify sources of elements which degrade infrared photodetector performance. Chemical analysis by glow discharge mass spectrometry and Zeeman corrected graphite furnace atomic absorption effectively showed the levels of impurities introduced into CdZnTe substrate material from the raw materials and the crystal growth processes. A new purification process(in situ distillation zone refining) for raw materials was developed, resulting in improved CdZnTe substrate purity. Substrate copper contamination was found to degrade the LPE layer and device electrical properties, in the case of lightly doped HgCdTe. Anomalous HgCdTe carrier type conversion was correlated to certain CdZnTe and CdTe substrate ingots.     

GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial growth of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epitaxial layers grown on 6H-SiC wafers were used as substrates for GaN HVPE growth. The GaN layers exhibit high crystal quality which was determined by x-ray diffraction. The full width at a half maximum (FWHM) for the ω-scan rocking curve for (0002) GaN reflection was ∼120 arcsec. The photoluminescence spectra for these films were dominated by band-edge emission. The FWHM of the edge PL peak at 361 nm was about 5 nm (80K).     

Phase equilibria in InAsSbP quaternary alloys grown by liquid phase epitaxy

The quaternary alloy InAs_1−x−ySb_xP_y, lattice-matched to InAs, is a promising material for the production of infrared light sources for the detection of gases in the 2–4 μm region of the spectrum. In this work, thermodynamic phase equilibrium calculations have been carried out to determine the compositions required for liquid phase epitaxial growth and the extent of the miscibility gap in the solid material. For high band gap materials, the desired growth temperature is found to be intermediate between a low temperature required to grow P-rich solids and higher temperatures required to avoidspinodal decomposition. Conventional LPE growth at an intermediate temperature of 583°C is found to produce good material with high luminescence efficiency and excellent optical characteristics. Problems with phosphorus loss from the melt are also discussed and lower growth temperatures are found to considerably reduce this problem. Growth in the metastable region between the binodal and spinodal lines has been achieved with the production of phosphorus-rich solids with concentrations up to y = 0.445.     

Electric current controlled liquid phase epitaxy of GaAs on N+ and semi-insulating substrates

Electric current controlled liquid phase epitaxy (LPE) of GaAs has been performed on both n⁺ and semi-insulating substrates. Growth is induced by current flow across the substrate-melt interface. The furnace temperature is held constant during growth so that direct electrical control of the growth process is achieved. The dependence of the growth rate on both the electric current density across the substrate-melt interface and the ambient furnace temperature was determined. Current densities from 5 to 20 A/cm² were employed and furnace temperatures ranging from 680 to 800°C were used. Sustained steady state growth rates as small as 0.022μm/min and as large as 1.4μm/min were obtained. For a given furnace temperature and current density, the measured growth rates on semi-insulating substrates range from 48% to 77% of the rates obtained on n⁺ n substrates. The surface morphology of the epitaxial layers is observed to depend on the electric current density employed during growth. Electric current controlled doping modulation was studied in epitaxial layers grown from unintentionally doped melts. The degree of doping modulation achieved is approximately proportional to the change in applied current density. Approximately a 40% increase in the net electron concentration is obtained by changing the current density from 10 to 30 A/cm² during growth. Preliminary experiments with tin doped epitaxial layers indicate that similar changes in the amount of tin incorporation can be achieved.     

Investigation of high quality GaAs:In layers grown by liquid phase epitaxy

Indium-doped GaAs layers are investigated by low-field Hall effect, photoluminescence, and double crystal x-ray diffraction in order to study the influence of the In concentration on the electrical, optical, and crystallographic properties. The layers were grown by liquid phase epitaxy from solution with In concentrations in the range 0–10 at.%. It was found that epitaxial growth from the melt with 7 at.% In content produces the highest quality epitaxial layers.     

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

The tunnel injection transit time (TUNNETT) diodes with p⁺p⁺n⁺n⁻n⁺ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p⁺n⁺) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth.     

Influence of annealing ambient on GaAs oxide prepared by the liquid phase method

The characteristics of GaAs native oxides prepared by the liquid phase chemical-enhanced oxidation technique annealed at various ambiences including N₂, O₂, and mixture of N₂ (85%) and H₂ (15%) are investigated. The annealing temperatures range from 300 to 700 °C. The shrinkage of oxide film thickness, the increase of refractive index, the decrease of surface roughness, the enhancement of breakdown field strength and the reduction of leakage current have been obtained for all annealing conditions, except for annealing in the ambient atmosphere of N₂ or O₂ at temperature of 700 °C. It is found that annealed oxide films exhibited better thermal stability in an atmosphere of N₂/H₂ up to an annealing temperature of 700 °C. This is due to the existence of H atoms in the oxide films as demonstrated by SIMS depth profiles.     

Properties of Bi-doped PbTe layers grown by liquid phase epitaxy under controlled Te vapor pressure

Effects of Bi doping in PbTe liquid-phase epitaxial layers grown by the temperature difference method under controlled vapor pressure (TDM-CVP) are investigated. For Bi concentrations in the solution, x_Bi, lower than 0.2 at.%, an excess deep-donor level (activation energy E_d≈0.03–0.04 eV) appears, and Hall mobility is low. In contrast, for x_Bi>0.2 at.%, Hall mobility becomes very high, while carrier concentration is in the range of 10¹⁷ cm⁻³. Inductive coupled plasma (ICP) emission analysis shows that, for x_Bi=1 at.%, Bi concentration in the epitaxial layer is as high as N_Bi=2.3–2.7 × 10¹⁹ cm⁻³. These results indicate that Bi behaves not only as a donor but also as an acceptor, and the nearest neighbor or very near donor-acceptor (D-A) pairs are formed, so that strong self-compensation of Bi takes place. Carrier concentration for highly Bi-doped layers shows a minimum at a Te vapor pressure of 2.2 × 10⁻⁵ torr for growth temperature 470°C, which is coincident with that of the undoped PbTe.     

Electrical and structural characterization of GaAs vertical-sidewall epilayers grown by atomic layer epitaxy

Electrical and structural measurements have been performed on novel test structures incorporatingp-type GaAs epilayers grown by organometallic vapor phase atomic layer epitaxy on the vertical sidewalls of semi-insulating GaAs rods formed by ion-beam-assisted etching. Preliminary results indicate that the vertical-sidewall epilayers have excellent crystal quality and sufficient electrical quality to support a sidewall-epitaxy device technology. Some examples of candidate electronic, electrooptic, and photonic devices for vertical-sidewall fabrication are FETs, resistors, waveguides, modulators, and quantum-wire and quantum-dot lasers.     

Porous silicon as an intermediate buffer layer for GaN growth on (100) Si

We report preliminary results on the growth of GaN on (100) Si substrate using porous silicon (PS) as an intermediate buffer layer. The growth was in situ monitored by laser beam reflectivity. Analysis of the evolution of the reflectivity signal indicates a change from relatively flat surface to rough one as the growth temperature (T_g) is increased. At a temperature of about 1050°C, the growth rate is very low and the reflected signal intensity is constant. When the growth temperature is varied, no drastic change of the porosity of the intermediate layer was detected. Scanning electron microscope (SEM) observations of the GaN/SP/Si structure revealed a good surface coverage at 500°C. When T_g increases, the structure morphology changes to columnar like structure at 600°C, and well-developed little crystallites with no preferential orientation appear at 800°C. These observations agree well with the X-ray diffraction (XRD) analysis. A preferential hexagonal growth is obtained at low growth temperature, while cubic phase begin to appear at elevated temperatures.     

Te vapor pressure dependence of the pn junction properties of PbTe liquid phase epitaxial layers

The pn junction characteristics of the PbTe epitaxial layers grown on PbTe substrates are investigated. Both the substrate crystals and the epitaxial layers are grown under controll Te vapor pressures. The ideality factors n of pn junctions decrease close to 1 in the temperature region from 40K to about 120K, but then increase with increasing temperature. The increase of n is more pronounced for higher Te vapor pressure. As a possible origin of the recombination current, deep levels with E_d=0.09 eV are found from Hall measurements for pn junctions grown under higher Te vapor pressure.     

HgCdTe液相外延薄膜生长及缺陷表征

液相外延是制备HgCdTe薄膜材料的一项成熟技术,大尺寸的外延薄膜是研制HgCdTe红外焦平面列阵的基础。探讨了尺寸为30mm×40mm的HgCdTe液相外延薄膜生长技术,用红外透射光谱和X光貌相技术对材料进行了评价。并对HgCdTe薄膜表面的黑点缺陷、波纹起伏等特征形貌进行了讨论,指出黑点缺陷是杂质粒子在薄膜表面形成的包裹体,而表面波纹是由生长母液中的对流引起的。     

Growth of high quality CdTe and ZnTe on Si substrates using organometallic vapor phase epitaxy

Epitaxial (100) CdTe and ZnTe layers with high crystalline quality have been grown on Si substrates by atmospheric pressure organometallic vapor phase epitaxy (OMVPE). A thin Ge interfacial layer grown at low temperature was used as a buffer layer prior to ZnTe and CdTe growth. The layers were characterized by Nomarski optical microscopy and double crystal x-ray diffraction. Double crystal rocking curves with full width at half maximum of about 110 and 250 arc-sec have been obtained for a 7 μm thick ZnTe layer and a 4 μm thick CdTe layer, respectively. The results presented demonstrate a novel method ofin-situ Si cleaning step without a high temperature deoxidation process to grow high quality CdTe and ZnTe on Si in a single OMVPE reactor.