Exciton enhancement effect on the third harmonic generation in ZnS/CdSe quantum dot quantum well

Exciton enhancement effect on the third-order optical nonlinearities of a ZnS/CdSe quantum dot quantum well (QDQW) has been theoretically studied. The wave functions and eigenenergies of excitons in QDQW have been calculated under the effective-mass approximation. By solving a three-dimensional nonlinear Schrödinger equation and by means of compact density matrix method, the third-order nonlinear susceptibilities for third-harmonic generation (THG) have been calculated in a two energy levels model of QDQW. Firstly, we studied the size effect on THG in QDQW. Then we compared the value of THG with the case that only considering electron states. The results show that the THG is greatly enhanced when compared with the condition just considering electron states.     

Quantum size dependent optical nutation in a core-shell CdSe/ZnS quantum dot

The energy eigenvalues and eigenfunctions have been obtained for a core-shell CdSe/ZnS quantum dot structure under effective-mass approximation. The electric transition dipole moment is calculated for the 1s-2s electronic transition. The optical nutation signal of the transition of electrons has been calculated numerically based on optical Bloch equations. Particularly, we have investigated the quantum size, the core's radius and the shell's thickness, dependent optical nutation. It is shown from calculation results that the optical nutation signal is sensitive to the size and structure change. And the reasons for the variation of the Rabi frequency have been discussed based on the theory of the quantum size confined effect (QSCE).     

Spin-orbit splitting dependent resonant third-order nonlinear optical susceptibility in InGaN/GaN multiple quantum wells

For the transition between valence band and conduction band, the third-order nonlinear optical susceptibility χ⁽³⁾ for degenerated four-wave mixing in In_xGa_1−xN/GaN multiple quantum wells (MQWs) has been calculated. The contributions of spin-orbit split-off energy to the resonant third-order nonlinear optical susceptibility of the modes, whose polarization is vertical to the [0 0 1] direction of the MQWs, are discussed in detail. The correlations between the peaks of χ⁽³⁾, which are due to the transitions from the spin-orbit split-off energy level to first conduction subband, and the width of the quantum well and the constituents of the semiconductor material are obtained.     

CdSe/ZnS量子点掺杂聚合物光纤放大器增益特性分析

提出了一种半导体量子点CdSe/ZnS掺杂聚合物光纤放大器。测量了CdSe/ZnS量子点吸收和发射光谱,采用二能级结构和速率方程的方法,全面描述了CdSe/ZnS量子点掺杂聚合物光纤放大器的增益性能。计算了放大器增益随量子点掺杂光纤长度、量子点掺杂浓度和信号光强度的变化,给出了不同泵浦光强条件下的增益谱线及半高全宽。结果表明,在mW量级的泵浦条件下,CdSe/ZnS量子点掺杂聚合物光纤放大器可获得35dB以上的增益,获得相同增益所需泵浦光强度只有同类型染料掺杂聚合物光纤放大器的万分之一。泵浦光强与量子点掺杂浓度之间存在最佳对应关系,单位泵浦功率激发的最佳量子点数为6.33×107/mW。在室温下,CdSe/ZnS量子点掺杂聚合物光纤放大器具有550nm～610nm的带宽,含盖了聚合物光纤的低损窗口。     

Lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots

The spectral dependences of the lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots are studied. The photoresponse of the Ge/Si structures with Ge nanoclusters is detected in the range 1.0–1.1 eV at T = 290 K, whereas the photocurrent in the single-crystal Si substrate is found to be markedly suppressed. This result can be attributed to the effect of elastic strains induced in the structure on the optical absorption of Si. At temperatures below 120 K, the heterostructures exhibit photosensitivity in the spectral range 0.4–1.1 eV, in which the Si single crystal is transparent. The photocurrent in this range is most likely due to the transitions of holes from the ground states localized in the quantum dots to the extended states of the valence band.     

Non-Markovian effects on quantum superpositions in a nanostructure

We consider a laser driven nanostructure such a single (SQD) or double quantum dot (DQD) of any shape, which is coupled to photon and phonon baths. These baths provide the basic sources of pure dephasing and relaxation of QD states. We present results which demonstrate that the second order correlation function (g⁽²⁾) of emitted photons shows enhanced antibunching features on a time scale, where non-Markov signatures are indeed important for a SQD. This latter feature is only observable when the initial QD state is of a superposition kind thus providing a remarkable sensitivity to state preparation. For a DQD we show that the dipole-dipole interaction is the responsible for superfluorescence at very short times when the driven laser is turned off.     

Optical properties of (001) GaN/AlN quantum wells

The absorption coefficient and the photoluminescence of (001) GaN/AlN quantum wells are calculated for several values of the well width, with and without the excitonic effect corrections, in the usual monoelectronic approach and as a many-body problem. The calculation was performed considering separate isolated bands for electrons, heavy and light holes. The monoelectronic approach to the optical properties was performed by assuming infinite well walls and finite well walls, respectively. The calculation including the excitonic effect as a many-body problem was performed within a recent approach designed for low-dimensional systems. The different wells studied here present many localized states and a complicated absorption spectrum. The monoelectronic approach in the infinite quantum well approximation reproduces quite well the spectrum of the wide wells due to the fact that the ground states of electrons and holes are well fixed by this model of quantum well.     

Parameter-dependent third-order nonlinear susceptibility of parabolic InGaN/GaN quantum dots

The electron states confined in wurtzite In_xGa_1−xN/GaN-strained quantum dots (QDs) have been investigated in the effective-mass approximation by solving the Schrödinger equation, in which parabolic confined potential and strong built-in electric field effect due to the piezoelectricity and spontaneous polarization have been taken into account. The third-order nonlinear susceptibility of the QDs in various directions (both parallel to z direction and vertical to z direction) have been calculated, and the magnitude reaches 10⁻¹⁴ m²/V². It has been shown from the results that the order of the built-in electric field in the strained QD is of MV/cm. Furthermore, the results of how the third-order nonlinear susceptibility depend on the radius R of QDs, the height L of QDs, the In content x of QDs and the relaxation rate Γ₁₀ have been given.     

球形量子点量子阱中的电子拉曼散射研究

本文对HgS/CdS球形量子点量子阱中的电子拉曼散射进行了研究;推导了拉曼散射截面的表达式,给出了有关的选择定则,获得了丰富的拉曼散射谱线,给出了相邻能级差对于不同阱宽的色散图谱并对谱线特点进行了分析和讨论,讨论结果直接给出了电子的重要微观信息。     

Grain size effect of nanocrystalline ZnO on characteristics of dye-sensitized solar cells

In this study, we demonstrate a dye-sensitized solar cells (DSSCs) was made by using two different grain sizes of nanocrystalline ZnO (nc-ZnO) as the photoelectrodes of the cells. It can be seen that the efficiency of this new type of solar cells obviously varied as the size and morphology of ZnO nanostructures. The short-circuit photocurrent, fill factor, and power conversion efficiency are enhanced while the smaller nc-ZnO was utilized in such a device.     

Wigner function and decoherence in a microcavity-Qdot system

The relation between the master equation and the Wigner function to characterize the dissipative system dynamics (evolution, mixedness and decoherence) between a three-level quantum-dot system coupled with two light modes in a semiconductor microcavity is analyzed. In particular, it is shown that the dephasing processes increase the decoherence driving the system from the strong coupling to the weak coupling regime.     

Electron Raman scattering in a HgS/CdS spherical quantum dot quantum well

Electron Raman scattering （ERS） is investigated in a spherical HgS/CdS quantum dot quantum well （QDQW）. The differential cross section （DCS） is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. The selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems.     

Differential optical gain in a GaInN/AlGaN quantum dot

Electronic and optical properties are obtained with the increase in indium alloy content (x) in a Ga_1-xIn_xN/Al_0.2Ga_0.8N quantum dot. The barrier height with the different In alloy contents is applied to acquire the confinement potentials. The results are obtained taking into consideration geometrical confinement effect. The optical absorption coefficient with the photon energy is observed in a Ga_1-xIn_xN/Al_0.2Ga_0.8N quantum dot. The optical output with the injection current density and the threshold optical pump intensity for various In alloy contents are studied. The differential gain as functions of indium alloy content, charge density and the dot radii in the Ga_1-xIn_xN/Al_0.2Ga_0.8N quantum dot are investigated. The exciton binding energy is calculated in order to obtain the exciton density, the optical gain and the threshold current density in the Ga_1-xIn_xN/Al_0.2In_0.8N quantum dot. The results show that the red shift energy with an increase in In alloy content is found and the differential gain increases with the charge carrier density.     

Impurities in elliptical quantum corrals

Elliptical quantum corrals present interesting properties due to the combination of confinement and focalizing properties. We show here that two magnetic impurities located at the foci of the systems experience an enhanced interaction, as compared to the one they would have in an open surface. These impurities interact via a superexchange AF interaction J with the surface electrons in the ellipse. For small J they are locked in a singlet state, which weakens for larger values of this parameter. When J is much larger than the hopping parameter of the electrons in the ellipse, both spins decorrelate and form a singlet with the nearest electron, thus presenting a confined RKKY-Kondo transition. We can also interpret this behavior via the entanglement or von Neumann entropy between the localized impurities and the itinerant electrons of the ellipse: for small J the entropy is nearly zero while for large J it is maximum.     

Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy

In this work, we have studied the dependence of the size and luminescence of self-assembled InAs quantum dots (SAQDs) on the growth conditions. The SAQDs were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). Their structural and optical properties were studied by atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). The growth of the InAs SAQDs was in situ monitored by reflection high-energy electron diffraction (RHEED). The shape and size of the InAs SAQDs were significantly affected by the growth temperature and the arsenic over-pressure. We observe a decrease of the SAQDS density and an increase in their height by increasing the growth temperature, and/or decreasing the arsenic over-pressure. This is accompanied by a remarkable red-shift of the PL emission energy from 1.3 to .     

Characterization of ideal and disordered InAS/GaSb heterostructures for infrared technologies

A series of microscopic calculations have been performed for a family of type II InAs/GaSb multiple quantum well (MQW) heterostructures. The resulting stationary state solutions were used to investigate the infrared spectra and scattering cross-sections due to clusters of isovalent anion defects. The absorption coefficient exhibited a polarization dependence which has not previously been observed for heterostructures made from these materials, in that the spectral features and magnitudes matched closely for radiation polarized parallel and perpendicular to the interfacial planes. The magnitude of the scattering cross-section was generally consistent with the defect density and the localization of the carrier wave functions. However, exceptions from this trend were identified in the proximity of the interfaces for electron scattering. Lattice relaxation around defects was observed to reduce scattering for both holes and electrons although the changes in the cross-section due to this phenomenon were not as pronounced as for equivalent superlattice systems. The collective results highlight significant differences between the optical and dynamical properties of MQW and superlattice systems.     

The effect of the periodic bias on the electron transport in a magnetic quantum structure

With the help of the transfer matrix method, the transmission probability, the electron conductance and the spin-polarization of the ballistic electron are in detail studied in a nanostructure with the periodic bias. It is shown that these observable quantities strongly depend on the number of the periodic bias. With the number of the periods increasing, the resonance splitting increases, so the number of the resonance peaks is increasing and the peaks become sharper as well as the spin-polarization being enhanced, although the average magnetic field of the structure is zero.     

Investigation of carrier relaxation dynamics in single CdSe/ZnSe self-organized quantum dot by time-resolved micro-photoluminescence

We have investigated carrier relaxation dynamics in single CdSe/ZnSe quantum dot (QD) by time-resolved micro-photoluminescence (PL). The discrete sharp lines, originated from individual QD states, exhibit various rise and decay time constants. The decay times of the sharp lines from ground states and excited states are estimated to be 700≈800 psec and 400≈500 psec, respectively, and the rise times of the ground states become longer compared with those of the excited states. There results are in contrast to successive change of the rise and decay times observed in time-resolved macro-PL with varying the detection wave-length. The quasi-continuum higher states with much shorter decay times are clearly observed over the discrete states of the QDs.     

Ferroelectric and leakage current characteristics of (Pb0.72La0.28)Ti0.93O3 thin films prepared by a sol-gel process

(Pb_1 − xLa_x)Ti_1 − x/4O₃(x = 28 mol%, denoted as PLT) thin films were grown on Pt/Ti/SiO₂/Si substrates by using a sol-gel process. The Pt/PLT/Pt film capacitor showed well-saturated hysteresis loops at an applied electric field of 500 kV/cm with spontaneous polarization (P_s), remanent polarization (P_r) and coercive electric field (E_c) values of 9.23 μC/cm², 0.53 μC/cm² and 19.7 kV/cm, respectively. At 100 kHz, the dielectric constant and dissipation factor of the film were 748 and 0.026, respectively. The leakage current density is lower than 1.0 × 10⁻⁷ A/cm²over the electric field range of 0 to 200 kV/cm. And the Pt/PLT interface exist a Schottky emission characteristics.