A new true-single-phase-clocking BiCMOS dynamic pipelined logicfamily for high-speed, low-voltage pipelined system applications

New true-single-phase-clocking (TSPC) BiCMOS/BiNMOS/BiPMOS dynamic logic circuits and BiCMOS/BiNMOS dynamic latch logic circuits for high-speed dynamic pipelined system applications are proposed and analyzed. In the proposed circuits, the bootstrapping technique is utilized to achieve fast near-full-swing operation. The circuit performance of the proposed new dynamic logic circuits and dynamic latch logic circuits in both domino and pipelined applications are simulated by using HSPICE with 1 μm BiCMOS technology. Simulation results have shown that the new dynamic logic circuits and dynamic latch logic circuits in both domino and pipelined applications have better speed performance than that of CMOS and other BiCMOS dynamic logic circuits as the supply voltage is scaled down to 2 V. The operating frequency and power dissipation/MHz of the pipelined system, which is constructed by the new clock-high-evaluate-BiCMOS dynamic latch logic circuit and clock-low-evaluate-BiCMOS (BiNMOS) dynamic latch logic circuit, and the logic units with two stacked MOS transistors, are about 2.36 (2.2) times and 1.15 (1.1) times those of the CMOS TSPC dynamic logic under 1.5-pF output loading at 2 V, respectively. Moreover, the chip area of these two BiCMOS pipelined systems is about 1.9 times and 1.7 times as compared with that of the CMOS TSPC pipelined system. A two-input dynamic AND gate fabricated with 1 μm BiCMOS technology verifies the speed advantage of the new BiNMOS dynamic logic circuit. Due to the excellent circuit performance in high-speed, low-voltage operation, the proposed new dynamic logic circuits and dynamic latch logic circuits are feasible for high-speed, low-voltage dynamic pipelined system applications     

Statistical timing and leakage power analysis of PD-SOI digital circuits

This paper presents a fast statistical static timing and leakage power analysis in Partially-Depleted Silicon-On-Insulator (PD-SOI) CMOS circuits in BSIMSOI3.2 100 nm technology. The proposed timing analysis considers floating body effect on the propagation delay for more accurate timing analysis in PD-SOI CMOS circuits. The accuracy of modeling the leakage power in PD-SOI CMOS circuits is improved by considering the interactions between the subthreshold leakage and the gate tunneling leakage, the stacking effect, the history effect, and the fanout effect. The proposed timing and leakage power analysis algorithms are implemented in Matlab, Hspice, and C language. The proposed methodology is applied to ISCAS85 benchmarks, and the results show that the error is within 5% compared with random simulation results.     

On circuit techniques to improve noise immunity of CMOS dynamic logic

Dynamic CMOS logic circuits are widely employed in high-performance VLSI chips in pursuing very high system performance. However, dynamic CMOS gates are inherently less resistant to noises than static CMOS gates. With the increasing stringent noise requirement due to aggressive technology scaling, the noise tolerance of dynamic circuits has to be first improved for the overall reliable operation of VLSI chips designed using deep submicron process technology. In the literature, a number of design techniques have been proposed to enhance the noise tolerance of dynamic logic gates. An overview and classification of these techniques are first presented in this paper. Then, we introduce a novel noise-tolerant design technique using circuitry exhibiting a negative differential resistance effect. We have demonstrated through analysis and simulation that using the proposed method the noise tolerance of dynamic logic gates can be improved beyond the level of static CMOS logic gates while the performance advantage of dynamic circuits is still retained. Simulation results on large fan-in dynamic CMOS logic gates have shown that, at a supply voltage of 1.6 V, the input noise immunity level can be increased to 0.8 V for about 10% delay overhead and to 1.0 V for only about 20% delay overhead.     

Low-Power Leading-Zero Counting and Anticipation Logic for High-Speed Floating Point Units

In this paper, a new leading-zero counter (or detector) is presented. New boolean relations for the bits of the leading-zero count are derived that allow their computation to be performed using standard carry-lookahead techniques. Using the proposed approach various design choices can be explored and different circuit topologies can be derived for the design of the leading-zero counting unit. The new circuits can be efficiently implemented either in static or in dynamic logic and require significantly less energy per operation compared to the already known architectures. The integration of the proposed leading-zero counter with the leading-zero anticipation logic is analyzed and the most efficient combination is identified. Finally, a simple yet efficient technique for handling the error of the leading-zero anticipation logic is also presented. The energy-delay behavior of the proposed circuits has been investigated using static and dynamic CMOS implementations in a 130-nm CMOS technology.     

High performance low power CMOS dynamic logic for arithmetic circuits

This paper presents the design of high performance and low power arithmetic circuits using a new CMOS dynamic logic family, and analyzes its sensitivity against technology parameters for practical applications. The proposed dynamic logic family allows for a partial evaluation in a computational block before its input signals are valid, and quickly performs a final evaluation as soon as the inputs arrive. The proposed dynamic logic family is well suited to arithmetic circuits where the critical path is made of a large cascade of inverting gates. Furthermore, circuits based on the proposed concept perform better in high fanout and high switching frequencies due to both lower delay and dynamic power consumption. Experimental results, for practical circuits, demonstrate that low power feature of the propose dynamic logic provides for smaller propagation time delay (3.5 times), lower energy consumption (55%), and similar combined delay, power consumption and active area product (only 8% higher), while exhibiting lower sensitivity to power supply, temperature, capacitive load and process variations than the dynamic domino CMOS technologies.     

Introduction of a new technique for simultaneous reduction of the delay and leakage current in digital circuits

By the reduction in the size of transistors and the development of submicron technology, as well as the construction of more integrated circuits on chips, leakage power has become one of the main concerns of electronic circuit designers. In this article, we first review techniques presented in recent years to reduce leakage power and then present a new technique based on the gate-level body biasing technique and the multi-threshold CMOS technique to minimize leakage power in digital circuits. Afterward, we develop another new method by improving the first proposed technique to achieve higher efficiency and simultaneously reduce leakage power and propagation delay in digital circuits. In the proposed technique, we use two dynamic threshold MOSFET transistors to reduce leakage current. In this paper, the body biasing generator structure is applied to reduce propagation delay. The proposed technique has been successfully validated and verified by post-layout simulation with Cadence Virtuoso based on the 32 nm process technology.We evaluate the efficiency of the proposed techniques by examining factors including power, delay, area, and the power delay product. The simulation results using HSPICE software and performance analysis to process corner variations based on the 32 nm process technology show that the proposed technique, in addition to having proper performance in different corners of the technology, significantly reduces leakage power and propagation delay in logic CMOS circuits. In general, the proposed technique has a very successful performance compared to previous techniques.     

Design and application of pipelined dynamic CMOS ternary logic andsimple ternary differential logic

Dynamic CMOS ternary logic circuits that can be used to form a pipelined system with nonoverlapped two-phase clocks are proposed and investigated. The proposed dynamic ternary gates do not dissipate DC power and have full voltage swings. A circuit structure called the simple ternary differential logic (STDL) is also proposed and analyzed, and an optimal procedure is developed. An experimental chip has been fabricated in a 1.2-μm CMOS process and tested. A binary pipelined multiplier has been designed, using the proposed dynamic ternary logic circuits in the interior of the multiplier for coding of radix-2 redundant positive-digit number. The structure has the advantages of higher operating frequency, less latency, and lower device count as compared with the conventional binary parallel pipelined multiplier. The advantages of the circuits over other dynamic ternary logic circuits are shown     

Low-swing current mode logic (LSCML): A new logic style for secure and robust smart cards against power analysis attacks

A new logic style called low-swing current mode logic (LSCML) is presented. It features a dynamic and differential structure and a low-swing current mode operation. The LSCML logic style may be used for hardware implementation of secure smart cards against differential power analysis (DPA) attacks but also for implementation of self-timed circuits thanks to its self-timed operation. Electrical simulations of the Khazad S-box have been carried out in 0.13 μm PD (partially depleted) SOI CMOS technology. For comparison purpose, the Khazad S-box was implemented with the LSCML logic and two other dynamic differential logic styles previously reported. Simulation results have shown an improved reduction of the data-dependent power signature when using LSCML circuits. Indeed the LSCML based Khazad S-box has shown a power consumption standard deviation more than two times smaller than the one in DyCML and almost two times smaller than the one in DDCVSL.     

QSERL: quasi-static energy recovery logic

A new quasi-static energy recovery logic family (QSERL) using the principle of adiabatic switching is proposed in this paper. Most of the previously proposed adiabatic logic styles are dynamic and require complex clocking schemes. The proposed QSERL uses two complementary sinusoidal supply clocks and resembles the behavior of static CMOS. Thus, switching activity is significantly lower than dynamic logic. In addition, QSERL circuits can be directly derived from static CMOS circuits. A high-efficiency clock generation circuitry, which generates two complementary sinusoidal clocks compatible to QSERL, is also presented in this paper. The adiabatic clock circuitry locks the frequency of clock signals, which makes it possible to integrate adiabatic modules into a VLSI system. We have designed an 8×8 carry-save multiplier using QSERL logic and two phase sinusoidal clocks. SPICE simulation shows that the QSERL multiplier can save 34% of energy over static CMOS multiplier at 100 MHz     

A 1.5-V differential cross-coupled bootstrapped BiCMOS logic forlow-voltage applications

Two new bipolar complementary metal-oxide-semiconductor (BiCMOS) differential logic circuits called differential cross-coupled bootstrapped BiCMOS (DC²B-BiCMOS) and differential cross-coupled BiCMOS (DC²-BiCMOS) logic are proposed and analyzed. In the proposed two new logic circuits, the novel cross-coupled BiCMOS buffer circuit structure is used to achieve high-speed operation under low supply voltage. Moreover, a new bootstrapping technique that uses only one bootstrapping capacitor is adopted in the proposed DC²B-BiCMOS logic to achieve fast near-full-swing operation at 1.5 V supply voltage for two differential outputs. HSPICE simulation results have shown that the new DC²B-BiCMOS at 1.5 V and the new DC²-BiCMOS logic at 2 V have better speed performance than that of CMOS and other BiCMOS differential logic gates. It has been verified by the measurement results on an experimental chip of three-input DC²B-BiCMOS XOR/XNOR gate chain fabricated by 0.8 μm BiCMOS technology that the speed of DC²-BiCMOS at 1.5 V is about 1.8 times of that of the CMOS logic at 1.5 V. Due to the excellent circuit performance in high-speed, low-voltage operation, the proposed DC²B-BiCMOS and DC²-BiCMOS logic circuits are feasible for low-voltage, high-speed applications     

Ultrafast compact 32-bit CMOS adders in multiple-output dominologic

A dynamic CMOS logic style, called multioutput domino logic (MODL), has been developed. In this logic style, single logic gates produce multiple functions, and a circuit's device count can be reduced by a factor of more than 2, depending on the degree of recurrence in the circuit. In addition, MODL circuits are, by construction, considerably more stable than other dynamic circuits including conventional domino. A 32-bit carry lookahead (CLA) structure which reduces the adder's worst-case path by two logic stages has also been devised. This CLA structure has been developed to effectively utilize the advantages of MODL. Taken together, these developments have resulted in two 32-bit CMOS adders, providing area and speed improvements of 1.5× and 1.7× over the combination of the domino and conventional CLA techniques. Both adders have been fabricated in a standard 0.9-μm two-level metal CMOS technology, and measured results show that the straight adder has achieved 32-bit addition times of less than 3.1 ns at 25°C with V_DD+5.0 V     

A self-timed divider using a new fast and robust pipeline scheme

This paper investigates the potential of self-timed property of differential cascode voltage switch logic (DCVSL) circuits, and examines architectural techniques for achieving self-timing in DCVSL circuits. As a result, a fast and robust handshake scheme for dynamic asynchronous circuit design is proposed. It is novel and more general than other similar schemes. The proposed self-timed datapath scheme is verified by an 8-bit divider which is implemented using AMS 0.6-μm CMOS technology, and the chip size is about 1.66 mm×1.70 mm. The chip testing results show that the divider functions correctly and the latency for 8-bit quotient-digit generation is 17 ns (about 58.8 MHz)     

基于动态逻辑的MPRM电路低功耗优化设计

n个输入变量的逻辑函数有3n种不同的MPRM(Mixed-Polarity Reed-Muller)表达式,其对应电路的功耗和面积不尽相同。本文通过对CMOS电路功耗和动态逻辑MPRM电路低功耗分解方法的分析,建立MPRM电路功耗和面积估计模型,而后提出一种基于动态逻辑的MPRM电路快速低功耗分解算法。在此基础上,针对中小规模和大规模MPRM电路,结合列表转换技术,分别将穷尽搜索算法和遗传算法应用于基于动态逻辑的MPRM电路低功耗优化设计中。通过对MCNC和ISCAS基准电路测试表明:与Boolean电路和FPRM(Fixed-Polarity Reed-Muller)电路相比,中小规模MPRM电路的功耗平均节省80.65%和50.98%,大规模MRPM电路的功耗平均节省69.17%和46.61%。     

All-N-logic high-speed true-single-phase dynamic CMOS logic

In this paper, a novel all-N-logic single-phase high speed dynamic CMOS logic is introduced and analyzed. The circuits achieve high speed by eliminating the need for the low-speed P-logic blocks. The use of all-N-logic allows the speed of the proposed circuits to be two to three times the speed of conventional CMOS dynamic circuits. An 2:1 frequency divider, using proposed ANL2 circuits, is simulated using 0.8 μm CMOS technology with the operating clock frequency reaching as high as 1.5 GHz. A pipelined 8-b carry generator of five-stacked NMOS transistors, which operates at a clock rate of over 710 MHz, has also been simulated. Experimental results show that the proposed circuits operate over 910 MHz implemented in a 1.2 μm CMOS technology     

Efficient metrics and high-level synthesis for dynamically reconfigurable logic

The increase in complexity of programmable hardware platforms results in the need to develop efficient high-level synthesis (HLS) tools since it allows more efficient exploration of the design space while predicting the effects of technology specific tools on the design space. Much of the previous works however neglect the delay of interconnects (e.g. multiplexer) which can indeed contribute heavily on the overall performance of the design. In addition, in the case of dynamic reconfigurable logic (DRL) circuits, unless an appropriate design methodology is followed, large number of configurable logic blocks (CLBs) could be used for communication between contexts, rather than for implementing functional units (FUs). The aim of this paper is to present a new technique to perform interconnect-sensitive synthesis, targeting dynamic reconfigurable circuits. Further, the proposed technique exploits multiple hardware contexts to achieve efficient designs. Experimental results on several benchmarks, which have been done on our DRL LSI circuit (Meribout, 2000 and Motomura, 1997), demonstrate that by jointly optimizing the interconnect, communication, and function-unit cost, higher quality designs than other previous techniques (e.g. force-directed scheduling) can be achieved.     

A graph based approach for reliability analysis of nano-scale VLSI logic circuits

Advances in nano-electronics VLSI manufacturing technology and the rapid downscaling of the size of logic circuits have made them more prone to errors. This has led to the need for fast circuit reliability evaluation of large logic circuits. In this paper a new method for reliability analysis of VLSI logic circuits based on a modified form of Mason’s rule is proposed. Utilizing matrix sparsity significantly increases the speed and reduces the required memory of the proposed approach. In addition, an approach is introduced to mitigate the effect of reconvergent paths. Simulation results indicate that the proposed method is scalable and runs 4× faster than previously proposed schemes.     

Hybridization of CMOS With CNT-Based Nano-Electromechanical Switch for Low Leakage and Robust Circuit Design

Exponential increase in leakage power has emerged as a major barrier to technology scaling. Existing circuit techniques for leakage reduction either suffer from reduced effectiveness at nanometer technologies or affect performance and gate-oxide reliability. In this paper, we propose application of a specific carbon nanotube (CNT)-based nano-electromechanical switch as a leakage-control structure in logic and memory circuits. In case of memory circuits, we demonstrate that the proposed hybridization can be employed to reduce both cell leakage and bitline leakage, thereby improving the read noise margin as well. Due to the unique electromechanical properties of CNTs, these switches have high current-carrying capacity, extremely low leakage current, and low operating voltages. Moreover, they can act as nonvolatile memory elements, which can be exploited for data retention of important registers and latches during power down. Simulation results for a set of benchmark circuits show that we can obtain several orders of magnitude improvement in leakage saving in logic circuits at iso-performance compared to existing multi-threshold CMOS technique. In memory circuits, simulations show reduction in standby leakage and reduction in bitline leakage compared with the best existing techniques.     

Advancements in bipolar VLSI circuits and technologies

Due to their inherent speed advantage over FETs, bipolar circuits are widely used for high-performance masterslice and custom logic and for high-speed static memory arrays. For logic, traditional circuits such as transistor-transistor logic and emitter-coupled logic are still mostly used, but new circuit technologies such as integrated injection logic or merged transistor logic and Schottky transistor logic or integrated Schottky logic have been devised to manage the VLSI technology constraints. For high-speed memory applications such as caches, local stores, or registers, conventional memory cells are increasingly being replaced by more advanced memory devices allowing higher bit densities and lower power dissipation. Significant progress can be expected through technology extensions such as dielectric isolation, multilayer metallization, and polysilicon techniques, in addition to shrinking the devices to 1 /spl mu/m dimensions or below.     

The twin-transistor noise-tolerant dynamic circuit technique

This paper describes a new circuit technique for designing noise-tolerant dynamic logic. It is shown that voltage scaling aggravates the crosstalk noise problem and reduces circuit noise immunity, motivating the need for noise-tolerant circuit design. In a 0.35-μm CMOS technology and at a given supply voltage, the proposed technique provides an improvement in noise immunity of 1.8×(for an AND gate) and 2.5×(for an adder carry chain) over domino at the same speed. A multiply-accumulate circuit has been designed and fabricated using a 0.35-μm process to verify this technique. Experimental results indicate that the proposed technique provides a significant improvement in the noise immunity of dynamic circuits (>2.4x) with only a modest increase in power dissipation (15%) and no loss in throughput     

Single Event crosstalk shielding for CMOS logic

With advances in technology scaling, CMOS circuits are increasingly more sensitive to transient pulses caused by Single Event particles. Hardening techniques for CMOS combinational logic have been developed to address the problems associated with Single Event transients, but in these designs, Single Event crosstalk effects have been ignored. In order to complement the Single Event upset (SEU) hardening process, coupling effects among interconnects need to be considered in the Single Event hardening and analysis of CMOS logic gates due to technology scaling effects that increase both SE vulnerability and crosstalk effects. As technologies advance, the coupling effects increasingly cause SE transients to contaminate electronically unrelated circuit paths which can in turn increase the “Single Event susceptibility” of CMOS circuits. Serious effects may occur if the affected line is a clock line or an input line of voters in triple-modular redundancy (TMR) circuit. Hence, this work first analyzes Single Event crosstalk on recent technologies and then proposes hardening techniques to reduce Single Event crosstalk. Hardening results are demonstrated using HSpice Simulations with interconnect and device parameters derived in 90 nm technology.