Structure and Properties of TiO2-CeO2 Films Deposited on Soda-Lime Silicate Glass Substrates by R.F.Magnetron Sputtering

TiO2-CeO2 films were deposited on soda-lime glass substrates at different ratio of O2 to Ar (0.10, 0.15,0.20) by R. F. magnetron sputtering. The structure, surface composition, UV-visible spectrum of the films were measured by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and spectrometer. The results show that the films are amorphous, and the relative molar ratio of Ce to Ti is higher than that of the target at lower ratio of O2 to Ar. Only tetravalent Ti 4 and Ce 4 ions are present in the films, and the obtained TiO2 -CeO2 films appear good uniformity and high density. The films deposited on the glass can shield ultraviolet light without significant absorption of visible light.     

Phase control of magnetron sputtering deposited Gd2O3 thin films as high-κ gate dielectrics

Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si(001) substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570℃ were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density (JL) of 10-5 A/cm2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6-13 nm. Through the comparison between films grown at 450 and 570℃, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.     

Growth of CeO2, Y2O3 Buffer Layers for YBCO Coated Conductor

The liquid citrate method was used to synthesize perovskite-type SrCe0.9 Y0.1O3-α powder. SrCe09Y01O3-α membranes were prepared from the powder by sintering at 1450℃ for 10 h. The reactions in the process of the heat treatment were studied by XRD and DSC/TG. The microstructure of the powder and the membrane was observed by SEM. The results indicate that the perovskite-type SrCe0.9Y0.1 O3-α can be synthesized at 1100℃. The particle size of the synthesized SrCe0.9Y0.1O3-α powder is less than 1μm. The powder can be densified at 1450℃.     

采用磁控溅射法在细菌纤维素膜上制备高性能的铟锡氧化物薄膜

Microbial cellulose (MC) membranes produced by Acetobacter xylinum NUST4.1, were used as flexible substrates for the fabrication of transparent indium tin oxide (ITO) electrodes. Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency (RF) magnetron sputtering. The optimum ITO deposition conditions were achieved by examining crystalline structure, surface morphology and optoelectrical characteristics with X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV spectroscopy. The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated. The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content (O2/Ar, volume ratio) in the sputtering chamber. And the ITO crystalline structure directly determines the conductivity of ITO-deposited films. High conductive [sheet resistance～120Ω.square-1(Ω.sq-1)] and transparent (above 76%)ITO rilms(240 nm thick) were Obtained with a moderate sputtering power (about 60 W) and with an oxygen flow rate of 0.25ml·min-1(sccm) during the deposition. These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.     

氧分压对直流磁控溅射铟锡氧化物(ITO)导电薄膜结构和性能的影响

通过直流磁控溅射热等静压铟锡氧化物(ITO)靶材制备ITO导电薄膜,并且针对O2-Ar混合气氛中氧的分压对ITO膜的结构、表面形貌、透光率以及导电率的影响进行了研究.结果表明,在低氧分压的条件下溅射,膜的(400)面非常显著地择优取向平行于玻璃表面,而随着氧分压的升高却表现为膜的(222)面择优取向平行于玻璃表面.同时,随着氧分压的升高,膜的表面粗糙度变小,膜的结构变得更细腻.膜的可见光透过率在氧分压增大的情形下有少许增大,但是膜的导电率却略有下降.     

Analysis of europium doped luminescent barium thioaluminate

Europium-doped barium thioaluminate sputtering target was synthesized by powder sintering method and thin film was deposited by radio frequency(RF) sputtering.X-ray diffractometer(XRD) pattern indicated that the main compound of the target was BaAl4S7.Oxygen was the main impurity which led to the formation of BaAl2O4.It was shown that both BaAl4S7 and BaAl2S4 were contained in the as-grown thin films and a 471.7 nm emission peak in the PL spectra appeared due to a combination of BaAl4S7:Eu2+ and BaAl2S4:Eu2+.In addition,the product of oxidation in the film was BaSO4 instead of BaAl2O4 and led to an emission peak at 415.2 nm in the PL spectra assigned to the f→f transition of Eu2+ in the BaSO4 host.     

Preparation of Large Area Double Sided YBCO Thin Films by DC Magneton Sputtering

Tc, Jc and Rs properties of large area double sided YBCO thin films deposited on LaAlO3 substrates by direct current sputtering were reported.Film thickness of the obtained thin films is over 300 nm, Tc ＞ 90 K; Rs can be as low as less than 1.0 mΩ(77 K, 10 GHz).Homogenousity of the properties around the plane was studied.Under the measnous distributions.Influences of substrate temperature and Ar and O2 pressures on properties of the double-sided thin films were discussed.     

An extended Derjaguin-Landau-Verwey-Overbeek theory approach to determining the surface energy of copper oxide thin films prepared by reactive magnetron sputtering

Copper oxide films were sputter deposited on glass substrates by reactive rf magnetron sputtering, using a solid copper target and an argon-oxygen gas atmosphere. The films were characterized by scanning electron microscopy, atomic force microscopy, and spectrophotometry. The effect of input power and oxygen flow rate on the dispersive, polar, and acid-base (AB) components of the surface energy of the films was evaluated. The extended Derjaguin-Landau-Verwey-Overbeek (DLVO) theory was used to analyze the factors controlling the interaction of copper oxide films with their environment. The components of the surface energy were determined by the Owens-Wendt and the Van Oss-Chaudhury-Good approaches, using water, ethylene glycol, and diiodomethane as the probe liquids. The Lifshitz-Van der Waals (LW) dispersive interaction force was found to be the major contributor to the surface energy of the films. In addition, we observed that other phases of copper oxide such Cu₂O and mixed Cu₂O/CuO are also hydrophobic. Black optically absorbing CuO has been previously identified as a hydrophobic phase. Transparent Cu₂O films hold substantial promise as antistiction coatings in micromirror arrays for micro-electromechanical systems applications. Copper oxide films also have potential aerospace applications as low friction coatings.     

Influence of bias voltage on structure,mechanical and corrosion properties of reactively sputtered nanocrystalline TiN films

Nanocrystalline TiN films were prepared by DC reactive magnetron sputtering. The influence of substrate biases on structure, mechanical and corrosion properties of the deposited films was studied using X-ray diffraction, field emission scanning electron microscopy, nanoindentation and electrochemical techniques. The deposited films have a columnar structure, and their preferential orientation strongly depends on bias voltage. The preferential orientations change from (200) plane at low bias to (111) plane at moderate bias and then to (220) plane at relatively high bias. Nanohardness H, elastic modulus E, H/E? and H3/E?2 ratios, and corrosion resistance of the deposited films increase first and then decrease with the increase in bias voltage. All the best values appear at bias of －120 V, attributing to the film with a fine, compact and less defective structure. This demonstrates that there is a close relation among microstructure, mechanical and corrosion properties of the TiN films, and the film with the best mechanical property can also provide the most effective corrosion protection．     

沉积压力对磁控溅射Mg薄膜结构的影响

采用直流磁控溅射方法在氧化锆固体电解质表面制备了Mg金属薄膜,利用XRD和SEM研究了沉积压力(0.9～2.1Pa)对薄膜形貌和结构的影响.结果表明:随着沉积压力的提高,薄膜结晶程度逐渐变差,晶粒尺寸减小,表面粗糙度增大;薄膜呈(002)择优生长的柱状晶结构,且随着沉积压力的提高薄膜厚度先增加后减小.     

工艺参数对Sm-Fe超磁致伸缩薄膜沉积速率的影响

采用磁控溅射在聚酰亚胺薄膜以及黄铜等基片上成功制备出Sm-Fe超磁致伸缩功能薄膜,并且较深入地研究了溅射功率、工作气压、靶基距以及沉积不同阶段等主要工艺参数对沉积速率的影响规律。结果表明:随溅射功率的减小和靶基距的增大,会不同程度地引起沉积速率的下降;随着工作气压的增大,最初沉积速率不断增大,当溅射气压增大到一定程度(1.5Pa)时,沉积速率达到最大值,之后随溅射气压的增大,又不断减小;对于黄铜和聚酰亚胺基片,溅射初始阶段的沉积速率低于后面阶段的沉积速率。     

Structure and Waveguide Properties of Sol-Gel Derived Gd2O3 Films

Pure and rare earth doped gadolinium oxide (Gd2O3) waveguide films were prepared by a simple sol-gel process and dip-coating method. Structure of Gd2O3 films annealed at different temperature was investigated by X-ray diffraction and transmission electron microscopy. Oriented growth of (400) face of Gd2O3 has been observed when the films were deposited on amorphous substrate. The refractive index and thickness of films were determined by m-lines spectroscopy. The laser beam (λ= 632.8 nm) was coupled into the film by a prism coupler and the propagation length is about 3.5 cm. Luminescence properties of europium ions doped films were measured by waveguide fluorescence spectroscopy, which shows disordered environment for Eu^3 at 400℃.     

靶材热处理温度对磁控溅射Mo薄膜组织和性能的影响

采用磁控溅射设备和经过不同温度热处理的Mo靶材,以相同的溅射工艺参数,在Si基片上制备了Mo金属薄膜,研究了靶材的热处理温度对Mo薄膜组织和性能的影响。研究结果发现,所制备Mo薄膜均呈现（110）晶面择优取向,而靶材热处理温度的升高能够提高（110）晶面的择优取向程度。所有薄膜均为T型低温抑制生长。比较结果表明：经1 200℃热处理的Mo靶材溅射率最高（18.5 nm/min）,且其溅射膜具有较小的方阻值和较好的厚度均匀性,综合性能最优。     

制备工艺对掺铕的钨酸钙薄膜发光性能的影响

采用射频溅射法在硅片上沉积了Ca0.98WO4∶Eu0.02薄膜,利用正交试验研究了溅射时间、气压和功率对Ca0.98WO4∶Eu0.02薄膜的红光(615 nm)发光强度的影响。荧光分析表明,溅射法沉积的Ca0.98WO4∶Eu0.02薄膜需在700⁸00℃热处理后才能强烈地表现出Eu3+离子的特征发光行为;正交试验说明,溅射气压、时间和功率对薄膜的发光强度都有重要影响,溅射气压的影响尤为重要。研究还表明,为提高发光强度,溅射气压宜控制在1.0 Pa左右,溅射时间在160 min。     

Influence of Magnetic Annealing on Properties of SmFe Thin Films

SmFe thin films were prepared by DC magietron sputtering at room temperature and 300 %. The influence of magnetic annealing temperature on the phase structure and magnetic properties was investigated. Results showed that thermal sputtering followed by a heat treatment process helped to obtain a structure with a relatively large fraction of SmFe2. Residual phases observed were α-Fe, Sm2O3, and unknown phases. During the annealing treatment, the intrinsic compressive stress in SmFe films was relieved and could become tensile at higher annealing temperatures. The degree of in-plane anisotropy weakened, and furthermore, the anisotropy transformed into out-of-plane anisotropy.     

Ultraviolet-shielding and conductive double functional films coated on glass substrates by sol-gel process

Ultraviolet-shielding and conductive double functional films were composed of CeO2-TiO2 film and SnO2:Sb film deposited on glass substrates using sol-gel process.Ce(NO3)3·6H2O and Ti(C4H9O4),SnCl4 and SbCl3 were used as precursors of the two different functional films respectively.The CeO2-TiO2 films were deposited on glass substrates by sol-gel dip coating method,and then the SnO2:Sb films with different thickness were deposited on the pre-coated CeO2-TiO2 thin film glass substrates,finally,the substrates coated with double functional films were annealed at different temperatures.The optical and electrical properties of the CeO2-TiO2 films and the double films were measured by UV-Vis spectrometer and four probe resistance measuring instrument.The crystal structures and surface morphology of the films were characterized using XRD and optical microscope,respectively.The obtained results show that the ultraviolet-shielding rate of the glass substrates with CeO2-TiO2 films is not less than 90%,and transmittance in visible lights can reach 65%.With the thickness of the SnO2:Sb film increasing,its conductivity became better,and the surface resistance is about 260 Ω/ when the SnO2:Sb films were deposited 11 cycles of the dip on the pre-coated CeO2-TiO2 glass.The ultraviolet-shielding rate of the glass substrates with double functional films is higher than 97%,and the peak transmittance in the visible lights is 72%.Additionally,with increasing the heat treatment time,the Na+ of the glass substrates diffuses into the films,resulting in the particle size of SnO2 crystal smaller.     

Study on vacuum ultraviolet spectra of amorphous Er_2O_3 films on Si（001） substrates

Amorphous Er2O3 films have been fabricated on p-type Si(001) substrates using radio frequency magnetron sputtering technique. Vacuum ultraviolet spectra were employed to investigate the samples. An optical gap of 6.17 eV for Er2O3 films was obtained from the ab-sorption coefficient spectra. A possible reason was put forward to explain the inconsistent results about the band gap of Er2O3 in literatures. Emission spectra exhibited a strong emission band at 494 nm with the incident ultraviolet light of 249 nm. The observed high density of emission bands of Er2O3 films in the visible wavelength indicated that Er2O3 films could be used in Si solar cells for increasing conversion efficiency.     

Formation of Nanocrystalline Structure of TaSi2 Films on Silicon

The nanocrystalline structure and mechanical properties of TaSi₂ films deposited by sputtering of TaSi₂ target have been investigated by x-ray diffraction, cross-sectional transmission electron microscopy (TEM), four-point electrical resistance measurement, and cyclic depth-sensitive nanoindentation. The purpose of this work is to study the formation of nanocrystalline structure in TaSi₂ films on a silicon substrate. As revealed, a decrease in the deposition rate leads to an increase in the O and C impurity content in the films. Contamination of the film by O and C atoms during a low-rate deposition causes the formation of an amorphous phase in the deposited films. Upon annealing, the amorphous structures crystallize into mixtures of disilicide and a small amount of polysilicide, i.e. TaSi₂ and Ta₅Si₃, respectively. After annealing at 970 K, the formation of a nanocrystalline structure with a grain size about 10 nm takes place in the film produced at a deposition rate of 0.2 nm/sec. The formation of a nanocrystalline structure changes drastically the mechanical properties of the film. The nanohardness and elastic modulus increase significantly, and the film becomes brittle and overstressed. After deposition in the film produced at the 1 nm/sec deposition rate mainly Ta disilicide and the amorphous phase are observed. After annealing, the amorphous phase near the Si substrate coexists with column-shape grains of Ta disilicide of size 150 × 500 nm. The annealed thin film becomes nonuniform in thickness. The nanohardness and elastic modulus increase.     

Mechanical Properties of TiTaHfNbZr High-Entropy Alloy Coatings Deposited on NiTi Shape Memory Alloy Substrates

TiTaHfNbZr high-entropy alloy (HEA) thin films with thicknesses of about 750 and 1500 nm were deposited on NiTi substrates by RF magnetron sputtering using TiTaHfNbZr equimolar targets. The thorough experimental analysis on microstructure and mechanical properties of deposited films revealed that the TiTaHfNbZr films exhibited amorphous and cauliflower-like structure, where grain size and surface roughness increased concomitant with film thickness. More importantly, the current findings demonstrate that the TiTaHfNbZr HEA films with mechanical properties of the same order as those of the NiTi substrate constitute promising biomedical coatings effective in preventing Ni release.     

基底温度对反应磁控溅射氮化铝薄膜的影响

采用反应磁控溅射法结合加热控温电源,在光学玻璃基底上制备氮化铝(AlN)薄膜,通过X射线衍射(XRD)技术对薄膜样品物相结构进行分析,利用纳米压痕仪测试薄膜样品的硬度及弹性模量,用椭圆偏振仪及光栅光谱仪测试了薄膜样品的光学性能,分析和研究了基底温度对AlN薄膜的结构及性能的影响.结果表明,用此方法获得的AlN薄膜呈晶态,属于六方晶系,温度对AlN(100)面衍射峰强度影响不大,但对(110)面衍射峰的影响较大,因而温度对AlN的择优取向有一定影响.AlN(100)峰半高宽随温度升高而减小,表明晶粒尺寸随温度升高有变大趋势.随沉积温度升高,薄膜硬度从150℃的8 GPa增加到350℃的10 GPa左右,随基底温度升高,薄膜的硬度增加.弹性模量随温度的变化趋势与硬度的基本一致.在可见光区域AlN薄膜透过率超过90％,基本属于透明膜.基底温度对薄膜折射率也有较明显影响,折射率大致随温度升高而增大,但由椭偏测试及透射谱线分析得到的厚度结果表明,随温度升高,AlN薄膜的沉积速率下降.