一个简单的量子阱激光器等效电路模型

给出一个新的量子阱激光器等效电路模型,由量子阱激光器单模速率方程推导得到并在电路模拟程序ＳＰＩＣＥ中完成。该模型考虑了热辐射效应和分离限制区域（ＳＣＨ）内的载流子工作情况,给出了新的光增益表达式。并利用该模型对单量子阱激光器的小信号特性和瞬态大信号特性进行了预测,模拟结果表明和速率方程的直接求解结果吻合很好。     

Simulation of carrier transport and nonlinearities in quantum-welllaser diodes

The two-dimensional (2-D) quantum-well (QW) laser diode simulator Minilase-II is presented in detail. This simulator contains a complete treatment of carrier dynamics including bulk transport, quantum carrier capture, spectral hole burning, and quantum carrier heating. The models used in the simulator and their connectivity are first presented. Then the simulator is used to demonstrate the effects of various nonlinear processes occurring in QW lasers. Finally, modulation responses produced by Minilase-II are compared directly with experimental data, showing good quantitative agreement     

Carrier dynamics and microwave characteristics of GaAs-basedquantum-well lasers

We investigate the effects of carrier capture and re-emission on the electrical impedance, equivalent circuit, and modulation response of quantum-well (QW) laser diodes. The electrical impedance is shown to be a sensitive function of the time constants associated with carrier capture/transport and carrier re-emission. We compare the theoretical results with measured values of the electrical impedance of high-speed InGaAs-GaAs multiple-quantum-well lasers fabricated using different epilayer structures with a common lateral structure. The experimental results agree well with the theoretical model, allowing us to extract the effective carrier escape time and the effective carrier lifetime in the QWs, and to estimate the effective carrier capture/transport time     

Modeling of GaN optoelectronic devices and strain-inducedpiezoelectric effects

Modeling of nitride-based LEDs and laser diodes requires a fast modular tool for numerical simulation and analysis. It is required that the modeling tool reflects the primary physical processes of current injection, quantum well (QW) bound-state dynamics, QW capture, radiative, and nonradiative transitions. The model must also have the flexibility to incorporate secondary physical effects, such as induced piezoelectric strain fields due to lattice mismatch and spontaneous polarization fields. A 1-D model with a phenomenological well-capture process, similar to that developed by Tessler and Eisenstein, has been implemented. The radiative processes are calculated from first principles, and the material band structures are computed using k·p theory. The model also features the incorporation of such effects as thermionic emission at heterojunctions. Shockley-Read-Hall recombination, piezoelectric strain fields, and self-consistent calculation of the QW bound states with dynamic device operation. The set of equations underlying the model is presented, with particular emphasis on the approximations used to achieve the previously stated goals. A sample structure is analyzed, and representative physical parameters are plotted. The model is then used to analyze the effects of incorporation of the strain-induced piezoelectric fields generated by lattice mismatch and the spontaneous polarization fields. It is shown that these built-in fields can accurately account for the blue-shift phenomena observed in a number of different GaN LEDs     

Modeling of quantum-well lasers for computer-aided analysis ofoptoelectronic integrated circuits

A two-port circuit model for quantum-well (QW) lasers has been developed from rate equations. With emphasis on the physical principles, the phenomena of the recombination process of electron-hole pairs and the light wave resonance in the active region have been incorporated into this new model. The model has been implemented in a circuit simulator and validated with measured DC and transient laser characteristics. The frequency effects on the modulation properties of QW lasers have been studied and analyzed using a small-signal model. Simulation results show excellent agreement with experimental data     

量子阱激光器计算机模拟系统

文章介绍了了一个量子阱激光器计算机辅助分析系统ＱＷＣＡＤ,该系统集成了增益计算,异质结激光器二维模拟,量子阱激光器二维模拟等几个适用工具,给出了激光器二维结构的描述方法,引入了量子效应及热效应模型,并附有中间及最后结果的一维及二维曲线输出。     

Small-signal performance of a quantum well diode

We study a small-signal performance of a quantum well (QW) diode with triangular emitter and collector barriers providing thermionic electron transport. Analytical expression for the QW diode admittance is obtained from the rigorous self-consistent small-signal analysis. Frequency dependence of the admittance is determined by a characteristic time of recharging of the QW, which is a strong function of temperature and parameters of the QW diode. Conductance as a function of temperature shows a local maximum corresponding to a resonance between a probe signal and recharging processes. Capacitance of the QW diode depends critically on the efficiency of the electron transport through the QW, and can significantly exceed all geometric capacitances associated with the device structure. Experimental data on conductance and capacitance of the QW diode as functions of temperature and frequency can be used to extract the parameters of the QW, such as QW recombination velocity, ionization energy, etc. Analytical analysis of transient currents in the QW diode allows a transparent explanation why an incremental charge-partitioning technique fails to calculate the capacitance even in the low-frequency limit     

High-frequency performance of single quantum well infraredphotodetectors at high power densities

The high-frequency properties of quantum well infrared photodetectors (QWIP's) based on a double-barrier single QW structure are studied theoretically. An analytical model of the QWIP is developed. The model takes into account the main processes responsible for the QWIP operation, namely, the electron tunneling from the emitter, capture of the electrons into the QW, their photoexcitation from the QW, and electron drift or ballistic transport across the QWIP structure. Analytical expressions for the QWIP responsivity as functions of the modulation frequency of infrared radiation, its power density, and the QWIP structural parameters are obtained from the rigorous self-consistent small-signal analysis. It is shown that there are two distinct ranges where the frequency dispersion of the responsivity is strong. At low frequencies, the responsivity dispersion is associated with the inertia of the process of recharging of the QW while at very high frequencies the dispersion is due to the electron transit-time effect. The influence of the electron transit-time effect on the QWIP admittance is also evaluated. The derivation of the QWIP high-frequency performance and, in particular, the estimates of 3-dB bandwidth show that the QWIP's have a great potential for devices utilizing both infrared radiation and millimeter or submillimeter wavelength microwave signals     

Modulation resonance enhancement in SCH quantum-well lasers with anexternal Bragg reflector

The modulation response of a semiconductor laser can be enhanced by coupling it to an external cavity with frequency-selective feedback. This creates a comb of transmission bands where the modulation response is high, at the cavity round-trip frequency and its harmonics. In a previous publication, we related the bandwidths of these bands to the material and structural parameters of a bulk laser. We showed that a nonzero linewidth enhancement factor together with a nonzero intermediate facet reflectivity lead to deep nulls close to the peaks of these transmission bands. This suggests that quantum-well (QW) lasers, which have a low linewidth enhancement factor, may give a better performance than bulk lasers. To test this hypothesis, we have extended our analysis to model QW lasers coupled to a fiber grating. Carrier transport, carrier heating, intraband carrier fluctuations, and nonparabolic band structures are considered. We show that electron carrier transport and amplitude-phase coupling in the separate-confinment-heterostructure (SCH) layer contribute to the nulls in the modulation response. Therefore, the apparent advantage of having a reduced linewidth enhancement factor that we found in our previous analysis cannot be fully realized by using QW lasers     

Threshold current density reduction of strained AlInGaAs quantum-well laser

In the last decades, researchers have tried to implement novel optoelectronic devices with new semiconductor material compounds. There are few competitors in the race for more reliable, more efficient, pump sources for solid-state lasers. These diodes should operate at high power, intense brightness, and with low threshold current. The strained AlInGaAs-GaAs quantum-well (QW) laser is a promising candidate. In this study we optimized the growth parameters of strained AlInGaAs quantum wells using a model for linewidth broadening of photoluminescence, which was extended for the first time to handle quaternary alloys. This model enables us to identify the dominant contributions to the broadening. As a result of our growth parameters optimization technique, low threshold current density of simple broad-area lasers has been obtained, indicating a superior material quality. Moreover, we have studied for the first time the effect of indium and aluminum content and QW width on the threshold current density of quaternary AlInGaAs QW lasers. As a result of these studies the lowest known threshold current density for AlInGaAs on GaAs single QW broad-area laser has been achieved.     

Optimal quantum well width and the effect of quantum well position on the performance of transistor lasers

Transistor laser (TL) model based on InGaP/GaAs/InGaAs/GaAs is analyzed and presented. It is realized that quantum well (QW) with width of 10 nm may be formed for low base threshold current density J th . The emission wavelength is found to be 1.05 μm, and the indium (In) composition is 0.25 for optimal QW width. It is identified that J th decreases with the movement of QW towards the base-emitter (B-E) interface. Small signal optical response is calculated, and the effect of QW position is studied. The bandwidth is enhanced due to the movement of the QW towards the emitter base junction.     

Auger recombination effect on threshold current of InGaAsP quantum well lasers

The Auger recombination effect on the threshold current of the InGaAsP quantum well (QW) laser is studied theoretically. All possible transitions between the quantized subbands of two-dimensional carriers are taken into account in evaluating the radiative process with thek-selection rule and the Auger process. The calculated threshold current agrees well with the reported experimental results for 1.07 μm InGaAsP QW lasers. The Auger component of the threshold current and its temperature dependence strongly depend on the QW structure, resulting in the necessity for an elaborate QW structure design, although both cannot be optimized at the same time. A design procedure is elucidated for a structure which gives the lowest threshold current density for the 1.07, 1.3, and 1.55 μm InGaAsP QW lasers.     

Carrier Transport and Optical Properties of InGaN SQW With Embedded AlGaN$delta$-Layer

We investigate the carrier transport and optical properties of a thick InGaN single quantum well (SQW) where an AlGaN delta-layer is embedded. By way of simulation, it is found that the carrier density distribution in the active region is more uniform in such a QW structure, compared to a double QW (DQW) configuration showing a discontinuity in the hole quasi-Fermi level due to the large effective mass of the holes along with the strong piezoelectric field. Through the photoluminescence (PL) measurements, we have shown that the PL peak energy varies depending sensitively on the delta-layer thickness, providing an extra degree of freedom in the wavelength-tuning control. In particular, such a QW structure is highly desired for long-wavelength emission as the wavelength tuning can be achieved with lower indium composition. The embedded delta-layer also increases the wave function overlap between holes and electrons, thereby shortening the PL lifetime. The results of PL measurements are shown to be consistent with the self-consistent numerical results. A possible application of the proposed QW structure is to the design of long-wavelength light-emitting diodes and laser diodes     

Effects of carrier heating on laser dynamics-a Monte Carlo study

The static and dynamic properties of semiconductor quantum-well (QW) lasers have traditionally been analyzed by using rate equations that couple cold carriers to photons in the lasing cavity. This assumption of cold carriers, however, has often been disputed because it does not account for heating due to carrier relaxation, hot phonon effects, and spectral hole burning. All these processes affect laser performance significantly by modifying the gain because gain depends on carrier temperature as well as spectral broadening. In this paper, we study the carrier dynamics of QW lasers using a Monte Carlo method and conclude that hot carrier effects in semiconductor lasers are important and need to be considered for the analysis and design of semiconductor lasers     

Effects of carrier transport on the L-I characteristics of QWlasers in the presence of spatial hole burning

In this paper, we study the effects of carrier transport and carrier capture on the linearity of the light-current characteristics of a semiconductor laser using an analytically solvable model. We include various physical processes within the model and study how they affect laser linearity. The technique used shows how to integrate the photon and electron transport within a single model, and the conclusions reveal some interesting aspects of semiconductor laser characteristics     

Detailed balance efficiency limits with quasi-Fermi levelvariations [QW solar cell]

A central assumption in detailed balance efficiency limit calculations has been that the light generated carriers are collected by drift transport processes and have an infinite mobility, giving rise to constant quasi-Fermi levels (RFLs) across the solar cell. However, recent experimental and theoretical results for quantum well (QW) devices indicate that the QFLs need not be constant across the device. It is shown in this paper that transport mechanisms which cause a variation in the difference between the electron and hole QFLs give an increase in the limiting efficiency compared to previous detailed balance calculations. Further, QW solar cells which employ hot carrier transport across a well will have an efficiency limit in excess of a tandem solar cell while using the same number of semiconductor materials     

生长材料中掺杂杂质纵向分布的扩散生长理论

从ＭＯＣＶＤ和卤化物ＶＰＥ的生长装置出发，分析了量子阱激光材料和微波电子材料中引入杂质的纵向分布和谐过程。采用了掺入杂质分子经载体气体漂移扩散输运和生长过程中再扩散的数学物理理论，导出了掺杂杂质最终纵向浓度分布的数学定量解析式。根据本理论，提出了陡峭掺杂和均匀纵向浓度分布的工艺解决方案。     

The influence of Coulomb enhancement on the modulation propertiesof quantum-well lasers

The phenomenon of Coulomb enhancement, resulting from the consideration of many-body effects, is included in a detailed calculation of the gain of a quantum-well (QW) laser, which is then used to predict the laser's modulation response. Carrier transport in the separate-confinement heterostructure is taken into account. The modulation response is compared to experimental data and to predictions from calculations using only the free-carrier gain. The comparison shows that the inclusion of Coulomb enhancement in the theoretical calculations leads to better agreement between simulated and experimental data     

Diffusion Growth Model of Doping—impurity Longitudinal Profile in Grown Material by MOCVD and Chloride VPE

The program process of the longitudinal impurity profile introduced in the quantum well(QW)laser and microwave electronic materials in analysed,based on the growth system by metalorganic chemical vapor deposition(MOCVD)and microwave electronic materials and chloride vapor phase epitaxy(VPE).The quantitative solution of the final longitudinal direction impurity distribution using the mathematical physics model of impurity carrier-gas transport drift and rediffusion in growth process was carried out.A technology for giving a reference to grown imputity profile of abrupt doping and uniform longitudinal direction based on the theory is presented.     

Theory of Optical Gain of Ge-SixGeySn1−x−y Quantum-Well Lasers

We develop a theoretical model for optical gain of a strained Ge--Si_xGe_ySn_1-x-y quantum-well (QW) structure. By using a ternary Si_xGe_ySn_1-x-y material system as the barriers, a tensile strained germanium QW with a direct band gap for the electron and hole confinements can be realized. We show our theoretical model for the strained band structure and the polarization dependent optical gain spectrum of the tensile strained germanium QW laser taking into account the carrier occupations in both the Gamma- and L-valleys of the conduction band. Reasonable material parameters are used to estimate the transition energy, optical gain spectrum, and effects of the carrier leakage in presence of the quantized subbands