Threshold current density in solution-grown GaAs laser diodes

Threshold current density of solution-grown GaAs laser diodes with a Fabry-Perot cavity were measured at 77 and 300°K by varying the acceptor concentration in thepregion Na. Threshold current density was lower in the series of diodes with larger values of Nathan in the series of diodes with smaller values of Nafor the diode length between 0.1 and 1 mm. Through these experiments diodes with the threshold current density as low as3 times10^{2}A/cm²at 77°K and2.8 times 10^{4}A/cm²at 300°K for the diode length of 1 mm, and as low as 10³A/cm²at 77°K and4.5 times 10^{4}A/cm²at 300°K for the diode length of 0.1 mm were obtained.     

Excitation mechanism and plasma parameters in pulsed argon-ion lasers

Pulsed argon-ion lasers show several interesting properties at high currents. To understand the inversion mechanism, the plasma parameters, electrical conductivity, electron temperature, and electron density were measured with the double-probe method for the pressure range from 15 to 50 mtorr in a 6-mm-bore tube. When the discharge current increases from 100 to 700 amperes at the optimum pressure for laser oscillation, these parameters increase from 250 to450Omega^{-1}cdotcm^-1, from8 times 10^{4}to10^{5}degK, and2 times 10^{14}to 10¹⁵cm^-3, respectively. At the maximum electron density, the percent of ionization appears to be in excess of 100 percent, as a result of the pinch effect and double ionization. It is certain that this ring discharge is at least ionized very strongly. In a 10-mm-bore tube, only the electron temperature and density were measured. The current dependence of the laser output power at high currents is interpreted with those results. Excitation mechanisms of high-current argon-ion lasers are discussed with experiments and theories for strongly ionized plasmas.     

Thermally accelerated life testing of single mode, double-heterostructure, AlGaAs laser diodes operated pulsed at 50mW peak power

Single spatial mode, double-heterostructure, channel-substrate-planar AlGaAs laser diodes have been life tested under thermally accelerated conditions to characterize the reliability of the diodes in a digital, optical communication system intended for space application. The diodes were operated pulsed under constant drive current conditions at 50 mW peak power, 25 ns pulse width, and 1 percent duty cycle in a dry, inert environment at ambient test temperatures at 40,55, and 70°C. Diode performance parameters as related to the space application, such as pulsewidth, peak power, wavelength spectrum, spatial mode, and threshold current, were periodically monitored. Tests have continued for over 14 000 h. The test results for all diodes with failure defined by power degradation alone is compared to the test results for single mode diodes with failure defined by power degradation, wavelength shift and spatial mode changes. It is found that the life test results are substantially equivalent but differ from earlier published reports for laser diodes operated CW. An activation energy of about 0.39 eV is deduced with a predicted median life of about5 times 10^{4}h at 20 °C. These values are somewhat lower than those found for diodes operated CW and are attributed to the use of single mode laser diodes here. It is concluded that thermally accelerated life testing for single spatial mode laser diodes must incorporate a means to separate bulk material, current, and optical density induced degradation effects. A test scheme is proposed.     

Comments on the reliability of GaAs Stripe-Geometry juntion lasers

Experiments with stripe-geometry lasers show that Byer's results for degradation of pulsed diodes can not be generalized to CW conditions. Diodes subjected to CW injection-current density of8 times 10^{3}A/cm²show very little degradation after close to 1000 hours of operation at room temperature.     

Correlation between location of light emission and spatial Nitrogen distribution in GaP LED's

Green-light-emitting diodes containing nitrogen only on the n side, the p side, and on both sides have been prepared by a single-step dissolution-regrowth liquid-phase epitaxial process with precisely controlled doping via the vapor phase. Because the ratios of total light emissions of the three diode types were 4:1:5, it is concluded that 80 percent of the light emission from diodes containing nitrogen on both sides is generated on the n side. This observation agrees with measurements of the lateral light output with high spatial resolution. A simple model for light generation in LED's is proposed which can be quantitatively analyzed using the measurements on our diodes and doping dependent material parameters from the literature. According to this model, the optimum doping levels aren = 10^{17}cm^-3andp = 10^{18}cm^-3, in agreement with empirical optimizations by other authors.     

Optical losses and efficiency in GaAs laser diodes

Optical gain and losses of GaAs laser diodes were deduced from the length dependence of the threshold current density and the differential external quantum efficiency at 77 and 300°K. It has been confirmed that the optical gain is proportional to the threshold current density Jt; and the optical losses are given by the sum of current independent termalpha_{0}', and current dependent termbeta"J_{t}, which is proportional to the threshold current density. The termbeta"J_{t}depends on the laser wavelength because the threshold current density depends on the laser wavelength. It is believed thatbeta"J_{t}is caused by the penetration of the laser oscillations into the noninverted regions surrounding the inverted population region of thep-njunction.     

CW laser operation of Nd:YLF

CW laser operation of Nd:YLF is reported for the first time and, in a comparison to Nd:YAG, exhibits a lower threshold and higher single-mode average power. The TEM00mode volume of Nd: YLF was observed to be a factor of four larger than Nd:YAG, resulting in twice the TEM00mode average power. This result is attributed to the substantially lower thermal lensing of YLF with respect to YAG. In comparative measurements the stimulated emission cross section of Nd:YLF was found to be1.8 times 10^{-19}cm²for the π oscillation and1.2 times 10^{-19}cm²for the σ oscillation, as compared to2.4 times 10^{-19}cm²for Nd:YAG. The spectroscopic and lasing parameters of Nd:YLF indicate a potential for this material in high peak and average powerQ-switched applications.     

Analyses of mode-hopping phenomena in an AlGaAs laser

Intensity fluctuations of the longitudinal modes of a 0.8 μm AlGaAs laser were precisely measured during the occurrence of hopping between two modes. It was found from this result that mode hopping follows the stochastics of a Poisson process. The frequency of mode hopping was measured asf_{c} = [exp [-95(I/I_{th} - 1)]] times 10^{7}(Hz). whereI/I_{th}is the injection current normalized to its threshold value. Results of analog computer simulations showed that spontaneous emission worked as a triggering force for mode hopping. Results of the analysis based on the Fokker-Planck equation were compared to the experimental results, from which the root-mean-square value of the fluctuating electric field of spontaneous emission was estimated as2.3 times 10^{2)(V/m)leqlanglesim{E}_{N} leq 3.2 times 10^{2}(V/m). It is concluded that an effective reduction of mode hopping is achieved if the laser is operated at a higher bias or if the coupling constant between the two modes is increased.     

Gain spectra in GaInAsP/InP proton-bombarded stripe-geometry DH lasers

We have measured gain spectra for TE polarization in a GaInAsP/InP laser as a function of dc bias current below laser threshold. The measurements were made on a low-threshold device with a stripe geometry defined by proton bombardment. A number of other characteristics of this and similar devices from the same wafer are also reported. These data permit the maximum gain coefficient of the active layer gmaxto be evaluated as a function of nominal current density Jnom. We obtain the linear relationshipg_{max} = (3.1 times 10^{-2}/eta_{r})(J_{nom} - eta_{r} 5.4 times 10^{3}), where ηris the radiative quantum efficiency. Our data apply only for large gain (g gsim 150cm^-1) and large Jnombecause the active layer of the test device is thin (0.1 μm).     

Reliable 2.3-$mu$ m Wavelength Highly Strained InAs–InP MQW-DFB Lasers With p-/n-InP Buried Heterostructure

We have realized reliable 2.3-$mu$ m wavelength InAs–InP multiquantum-well distributed-feedback (DFB) lasers for trace gas monitoring applications. The estimated median lifetime exceeds $1times 10^{5}$ hours during aging at an ambient temperature of 45 $^{circ}$C and with a constant output power of 3 mW. Furthermore, the relative increase in operating current is proportional to the square root of time, and it is clarified that the main degradation mechanism in DFB lasers with highly strained InAs quantum wells is dominated by a diffusion process as found with conventional telecommunication lasers.      

Deep red laser emission in Ho:YLF

Laser operation of the⁵S2→⁵I7transition in 2 percent Ho:YLF at room temperature is reported. Oscillations atlambda = 750nm were obtained in flashlamp and dye laser pumped experiments. Thresholds of 4 J/cm and3 times 10^{-4}J/cm were observed in flashlamp and laser pumped operation, respectively. The 750-nm transition in the Ho:YLF is a four-level laser with a stimulated emission cross section ofsigma = 9.7 times 10^{-19}cm².     

Lateral analysis of quasi-index-guided injection lasers: Transition from gain to index guiding

In double-heterostructure stripe-geometry semiconductor lasers an effective lateral index stepDelta n_{L}over the stripe region can be induced through evanescent-field coupling. Such a quasi-index-guided device exhibits a transition from the gain-guided to the index-guided regime whenDelta n_{L}is progressively increased. Using parameters appropriate to a 1.3-μm InGaAsP laser, the transition is shown to occur aroundDelta n_{L} sim 5 times 10^{-3}. The exact value ofDelta n_{L}depends on the extent of carrier-induced antiguiding. In the transition region the threshold current decreases rapidly, the lateral mode contracts, and the far field changes from a twin-lobe to a single-lobe pattern. Our analysis suggests that a quasi-index-guided device operates most efficiently for values ofDelta n_{L}at which the index-guided regime is just approached. With a further increase ofDelta n_{L}, the mismatch between the gain and mode profiles leads to lower differential quantum efficiencies. Among other structures, the analysis is applicable to a ridge waveguide laser. For a 1.3-μm laser the optimumDelta n_{L}can be obtained using 0.2-μm-thick cladding layers for a 0.2-μm thick active layer.     

FM eliminated CH4locked frequency stabilization of 3.39 µm He-Ne laser in dual feedback control

The frequency of the 3.39 μm He-Ne laser was locked to the CH4saturated absorption line by means of integral-proportional feedback control, i.e., dual feedback control. The frequency modulation was applied by a vibrating mirror placed outside a laser cavity, obtaining a modulation-free laser beam with a stabilized frequency. The long-term stability achieved under integral feedback control was aboutpm1.1 times 10^{-11}, which was further improved topm 1.35 times 10^{-12}under dual feedback control. The Allan variance measured by the photomixing technique was1.77 times 10^{-12}at an average time 100 s.     

Performance of InxGa1-xAsyP1-yphotodiodes with dark current limited by diffusion, generation recombination, and tunneling

We present a theoretical study of the effects of diffusion, generation-recombination (GR), and the recently observed tunneling currents on the performance of photodiodes made from In0.73Ga0.27As0.63P0.37and In0.53Ga0.47As. Calculations are made for both p+ν and p-i-n punch-through diode configurations, and are compared with recent measurements made by several independent investigators. For doping densities typical of present material (N_{D} gsim 10^{15}cm^-3), tunneling currents become dominant prior to avalanche breakdown. Thus, for detection of weak (-55 dBm at 45 Mbits/s) optical signals, the diodes must be operated at low voltages where GR is the dominant source of reverse-biased leakage. To meet the requirements of low capacitance (C leq 0.5pF for a diode area of 10^-4cm²) and low GR dominated dark current (I_{D} leq 10nA atT = 70degC), the doping density and effective carrier lifetime (τeff) must beN_{D} < 7 times 10^{15}cm^-3andtau_{eff} gsim 150ns for In0.73Ga0.27As0.63P0.37and5 times 10^{14} lsim N_{D} lsim 7 times 10^{15}cm^-3andtau_{eff} gsim 3.5 mus for In0.53Ga0.47As.     

The Electrical and Interfacial Properties of Metal-High-$kappa$ Oxide-Semiconductor Field-Effect Transistors With $hbox{LaAlO}_{3}$ Gate Dielectric

$hbox{LaAlO}_{3}$ is a promising candidate for gate dielectric of future VLSI devices. In this letter, n-channel metal–oxide–semiconductor field-effect transistors with $hbox{LaAlO}_{3}$ gate dielectric were fabricated, and the electron mobility degradation mechanisms were studied. The leakage current density is $hbox{7.6} times hbox{10}^{-5} hbox{A/cm}^{2}$ at $-!$ 1 V. The dielectric constant is 17.5. The surface-recombination velocity, the minority-carrier lifetime, and the effective capture cross section of surface states were extracted from gated-diode measurement. The rate of threshold voltage change with temperature $(Delta V_{T} / Delta T)$ from 11 K to 400 K is $-!$ 1.51 mV/K, and the electron mobility limited by surface roughness is proportional to $E_{rm eff}^{-0.66}$.      

Small-signal gain and saturation parameter of a transverse-flow CW oxygen-iodine laser

The small-signal gain and saturation parameter of a transverse-flow CW oxygen-iodine laser have been experimentally obtained for the first time from output power measurements made as a function of the cavity losses without using a CW probe laser. These measurements typically yieldalpha_{0} simeq 0.045m^-1andI_{s} simeq 0.44kW/cm²for a Cl2flow rate of1.4 times 10^{-3}mol/s with an I2flow rate of4 times 10^{-6}mol/s. The dependences of the small-signal gain and saturation parameter have been also found on the Cl2flow rate. These behaviors are qualitatively explained by a simple two-level model.     

The reliability of a practical Ga1-xAlxAs laser device

A GaAlAs DH-laser hybrid device is described that compensates for temperature variations and laser degradation. Lifetesting in a 55°C ambient for over a year yields a projected room-temperature median lifetime of6 times 10^{5}h. Lasers having no aluminum in the active layer have a median lifetime 70 times smaller.     

Optical absorption and fluorescence studies in high pressure cesium-xenon mixtures

The pressure and temperature dependent absorption and fluorescence spectra of the cesium-xenon (CsXe) molecule have been examined. In contrast to previous investigations of the alkali-rare gas molecules, cesium atomic states that have weakly allowed optical transitions have been studied and have been shown to form excimer levels that are attractive for application as potential dissociation lasers. In particular, the (Cs[7^{2}S]Xe)* excimer appears promising as a source of high-energy laser radiation due to 1) its large dissociation energy (0.132 eV), 2) its stimulated emission cross section ofsimeq10^{-17}cm², and 3) its small population threshold inversion densities (simeq10^{13}cm^-3).     

FM eliminated CH4locked frequency stabilization of 3.39 µm He-Ne laser in dual feedback control

The frequency of the 3.39 μm He-Ne laser was locked to the CH4saturated absorption line by means of integral-proportional feedback control, i.e., dual feedback control. The frequency modulation was applied by a vibrating mirror placed outside a laser cavity, obtaining a modulation-free laser beam with a stabilized frequency. The long-term stability achieved under integral feedback control was aboutpm1.1 times 10^{-11}, which was further improved topm1.35 times 10^{-12}under dual feedback control. The Allan variance measured by the photomixing technique was1.77 times 10^{-12}at an averaging time 100 s.     

Ellipse rotation studies in laser host materials

Using a TEM00qnear Gaussian mode ruby laser system we report the first experimental measurements of intensity induced changes of optical polarization (ellipse rotation) in a cubic crystalline medium, YAG, for which we obtain the nonlinear susceptibilitieschi_{3}^{1221} (- omega, omega, omega, -omega) = 6.34 times 10^{-15}ESU andfrac{1}{2} (chi_{3}^{1111} + chi_{3}^{1221} - 2chi_{3}^{1212}) = 7.18 times 10^{-15}ESU, accurate to better than ±7 percent relative tochi_{3}^{1221} (- omega,omega,omega, -omega)for liquid CS2. These values are compared with further results obtained for fused quartz and two laser glasses. Moreover, by time resolving the ellipse rotation data we demonstrate the capability to plot ellipse rotation versus input power on a single laser shot, thus increasing the practical feasibility of the technique and introducing the possibility of resolving transient contributions to the measurement.