单晶Ge纳米薄膜面向热导率的分子动力学模拟

利用非平衡分子动力学模拟方法研究了单晶Ge薄膜的厚度以及温度对其面向热导率的影响规律。针对单晶Ge薄膜的结构特点和导热机制,采用Stillinger-Weber势能模型描述Ge粒子间的相互作用,并且建立面向稳态热传导模型。模拟结果显示,单晶Ge薄膜面向热导率具有明显尺寸效应,随薄膜厚度的增加而增大,随温度的升高而减小。与法向热导率的模拟结果进行比较,证明单晶Ge薄膜热导率具有各向异性的特点。     

纳米Pt膜的晶粒尺寸及其对热导率的影响

采用电子束-物理气相沉积法（EB-PVD）制备了6个厚度为15-62nm的铂薄膜,研究了纳米薄膜的晶粒尺寸及其对热导率的影响规律．当薄膜厚度小于30nm时,晶粒平均尺寸接近于薄膜的厚度;晶粒尺寸随着薄膜厚度的增加而增大并趋于定值;当薄膜厚度大于30nm时,晶粒尺寸约为20nm．受薄膜的表面和内部晶界的综合影响,铂纳米薄膜的热导率大大低于体材料的值,并且纳米薄膜的热导率随着薄膜厚度的增加而增大并趋于一个低于体材料热导率的值．     

纳晶Cu-Ag双峰材料热传导行为特性研究

采用热压烧结法制备了具有双峰结构的纳晶Cu-Ag复合材料和纳晶Cu金属材料,采用激光法测定了试样在不同温度(200~400 K)下的热导率。测量结果显示,2种纳晶金属材料热导率随晶粒尺寸的增加而增加,并且随温度的降低而减小。在300 K下平均晶粒尺寸为150 nm的纳晶Cu-Ag双峰材料试样的热导率为163.45 W/m·K,分别占粗晶Cu和粗晶Ag的40.7%和38.1%。本研究引入并改进了卡皮查热阻理论模型对试样热导率进行了数值计算,计算结果与实验数据基本一致,纳晶Cu-Ag双峰材料热导率明显低于单晶Cu/Ag块体,纳晶金属材料热导率随着晶粒尺寸的增加而增加,验证了纳晶Cu-Ag双峰材料热导率在一定的晶粒尺寸范围内具有尺寸效应。     

应变影响下单晶Ge薄膜热导率分析

利用非平衡态分子动力学模拟方法研究了应变对Ge薄膜热导率的影响。结果表明系统应变对单晶Ge薄膜热导率产生明显影响,热导率随着拉伸应变的增大而减小,随着压缩应变的增大而增大,得出声子速率降低以及薄膜表面重构是产生该模拟结果的内在原因。同时,采用修正的Callaway模型对NEMD结果进行理论验证,两种方法得到的结果吻合得较好。理论结果表明应变弛豫时间对Ge单晶薄膜的热导率产生了重要影响。     

应变影响下单晶Ge薄膜热导率分析（英文）

利用非平衡态分子动力学模拟方法研究了应变对Ge薄膜热导率的影响。结果表明系统应变对单晶Ge薄膜热导率产生明显影响热导率随着拉伸应变的增大而减小,随着压缩应变的增大而增大,得出声子速率降低以及薄膜表面重构是产生该模拟结果的内在原因。同时,采用修正的Callaway模型对NEMD结果进行理论验证,2种方法得到的结果吻合得较好。理论结果表明应变弛豫时间对Ge单晶薄膜的热导率产生了重要影响。     

非晶层对单晶锗纳米切削影响的分子动力学研究

为探究非晶层结构对单晶锗纳米切削机制和力学特性的影响,采用分子动力学方法模拟不同非晶层厚度的非晶-晶体层状结构(A-C模型)的纳米切削过程.对纳米加工中切削力波动规律,应力状态,亚表面损伤和材料去除等关键问题进行分析.结果 表明:非晶锗(A-Ge)厚度的增加使得切削力和应力减小,切削温度升高;材料的可塑性随着A-Ge厚...     

FTO/SiO_2复合薄膜的制备及电阻（英文）

采用溶胶-凝胶法制备了FTO/SiO_2复合薄膜。使用扫描电镜、X射线衍射仪、厄氏粘度计和表面四点探针等手段,研究了乙醇与正硅酸乙酯比例、水与正硅酸乙酯比例、掺杂F、薄膜的厚度、热处理温度、溶胶黏度、薄膜表面形貌、组织结构和电阻等制备参数和性能特征。适合于制备FTO/SiO_2复合薄膜的SiO_2溶胶最佳的参数为EtOH/TEOS/H2O为4/2/1,pH为3。加热会导致薄膜产生裂纹,加热速度控制在0.25℃/min时,薄膜表面完好。掺杂F可以明显地改善薄膜的导电性,随F的掺杂浓度增加,电阻明显减小,最佳的F掺杂浓度为5mol%。在500℃以下,随热处理温度的提高,膜的导电性增加。导电性也随薄膜厚度的增加而增加。当F掺杂浓度为5mol%,薄膜厚度为1+3层溶胶,热处理温度为500℃时,FTO/SiO_2薄膜的方块电阻为270?/□。     

纳米尺度单晶锗各向异性摩擦磨损性能试验研究

利用纳米压痕仪和原子力显微镜,分别对单晶锗Ge(100)、Ge(110)、Ge(111)3种晶向的表面进行纳米尺度下的摩擦磨损试验。在较大载荷的条件下,3种不同晶面取向的单晶锗磨损情况均呈现沟槽形式,沟槽两侧出现明显的碎屑堆积现象。在划痕试验过程中,单晶锗的磨损性能受晶面取向影响较小;单晶锗的摩擦力随着滑动速度的增加而增加。而且,随着滑动速度的增大,晶体表面出现严重的磨损-沟槽损伤,沟槽两侧碎屑堆积的体积也越来越大,沟槽的深度也逐渐增大;单晶锗在较低载荷下,摩擦力基本保持稳定,但随着载荷的增大,单晶锗的摩擦力呈非线性增长,载荷增大一定值时,晶体表面发生明显的由塑性变形向脆性破坏转变的脆塑转变过渡过程,导致单晶锗表面发生脆性剥离,形成沟槽两侧碎屑堆积。     

单晶Fe_3O_4超薄膜的制备与磁性研究

采用磁控溅射方法制备了单晶Fe_3O_4超薄膜,系统研究了厚度(3~30nm)对薄膜磁性的影响。X射线衍射证明了Fe_3O_4单晶薄膜是(220)晶向,(220)衍射峰的半高全宽和晶格常数随薄膜厚度的下降而增大。磁性测量观察到了清晰的磁滞回线,饱和磁化强度达400×103 A/m。低温电阻率测量证实了薄膜在120K温度附近发生了导体向绝缘体的Verwey转变。利用原子力显微镜观察到Fe_3O_4薄膜的表面粗糙度非常低,适用于纳米尺度自旋电子学器件的开发。     

磁控溅射法制备La0.7Sr0.3MnO3/Nb0.01SrTi0.99O3异质p-n结的整流特性研究

采用磁控溅射方法,首次在n型Nb0.01SrTi0.99O3单晶衬底上成功制备出La0.7Sr0.3MnO3/Nb0.01SrTi0.99O3异质p-n结.电学性能测试表明,该异质结在40～320 K温度范围内均表现出较好的整流特性,且扩散电势随温度升高而降低.这是由于耗尽层厚度在热扩散作用下逐渐变薄以及温度对界面电子结构调制作用的共同结果.随外加正向偏置电流的增加,提高La0.7Sr0.3MnO3薄膜中的空穴浓度,增强其双交换作用,使金属-绝缘转变温度从200 K升高至约250 K.     

Metallic Glass Nano-composite Thin Films for High-performance Functional Applications

Metallic glass nanocomposite thin films were synthesized for an immiscible Ag-Cu alloy system by magnetron sputtering. The structure of the films was unique, consisting of homogeneously dispersed nanocrystallites in an amorphous matrix. The size and volume fraction of the nanocrystallites increased with increasing film thickness resulting in increased elastic modulus and hardness. The high electrical conductivity of the nanocomposite films was examined by a valence-band study, which showed that exchange interaction between Ag and Cu in the nanocomposite structure resulted in enhanced charge carrier concentration. The inverse correlation between electrical conductivity and film thickness was explained by surface and interface scattering of electrons with increasing volume fraction of nanocrystallites. The small temperature dependence of conductivity was attributed to the distorted Fermi surface of the nanocomposite films resulting in a greater contribution from structure scattering, which is temperature-independent.     

氮化钛薄膜二次电子发射特性研究

目的研究氮化钛薄膜的部分物理特性及真空中的电子发射特性,验证氮化钛薄膜具有相对较好的电导特性及较低的电子发射系数,证明氮化钛薄膜在空间大功率微波器件表面处理中有良好的应用前景。方法使用射频磁控溅射技术在单晶硅及玻璃片表面制备氮化钛薄膜,实验中通过调节溅射过程中氮气与氩气的气体流量比控制薄膜中的氮钛原子比。使用SEM对氮化钛薄膜的表面形貌及厚度进行表征。使用超高真空二次电子发射特性研究平台对氮化钛薄膜的二次电子发射特性进行表征。结果通过调节溅射过程中的氮气氩气流量比,能够有效控制薄膜中氮钛两种元素的含量,进而改变氮化钛薄膜的结晶方式和其他物理特性。当氮氩气体流量比约为10:15时,薄膜中氮钛原子比约为1:1。电阻率测试结果表明,薄膜中氮钛原子比越接近1:1,薄膜的电阻率越低。二次电子产额(SEY)测试结果表明,所制备氮化钛薄膜的最小SEY峰值约为1.46,低于平滑金(~1.8)、银(~2.2)表面的SEY。结论氮化钛薄膜具有较好的电导特性及较低的SEY,且其在真空环境中有良好的稳定性,能在不影响微波器件表面损耗的情况下,有效降低器件表面发生电子倍增的风险。     

A study on the thermal conductivity measurements of Cu thin films utilizing temperature distribution

Thin film type materials are widely used in high-tech industries including electronics, photonics and even machine tools. Often, knowledge of the thermal properties of thin films is needed to assess reliability through thermal stress analysis when the thin film type materials are applied to functional electronic parts. Only a few methods have been developed for thermal conductivity measurement of a thin film on a substrate. In this study Cu thin films were processed on the borosilicate glass substrate of prismatic bar shape using sputtering. Two Cu coated surfaces of specimens were brought into contact to maintain the insulated boundary conditions. The temperature distributions were measured from the back surface of the substrate using radiation thermometry. The thermal conductivities of the Cu thin films were measured and found to be much lower than those of bulk materials. The measured thermal conductivities were found to be closely related to the microstructures of the Cu thin films.     

计入表面吸附膜的热弹流润滑体系建模及分析

目的 研究表面吸附膜在热弹流润滑中的作用机理.方法 构建考虑表面吸附膜的非牛顿流体点接触热弹流润滑模型,分析润滑剂的非牛顿性、吸附膜及钢的热传导系数对热弹流润滑性能的影响.结果 润滑剂的非牛顿性及吸附膜的计入对油膜压力和厚度的影响很小.与牛顿流体相比,非牛顿流体可以得到较低的温升和摩擦系数.同时,随着非牛顿流体特征剪应...     

Preparation and properties of CdS thin films grown by ILGAR method

CdS thin films were deposited by the ion layer gas reaction (ILGAR) method. Structural, chemical, topographical development as well as optical and electrical properties of as-deposited and annealed thin films were investigated by XRD,SEM, XPS, AFM and UV-VIS. The results showed that the thin films are uniform, compact and good in adhesion to the substrates, and the growth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structure to the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. An amount of C, O and C1 impudries can be reduced by increasing the drying temperature or by annealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higher wavelength after annealing or increasing film thickness. The electrical resistivity decreases with increasing annealing temperature and film thickness.     

Influences of vacancy defects on thermal conductivities of Ge thin films

The effects of vacancy defects on the thermal conductivity of Ge thin films were investigated by employing molecular dynamics(MD) simulations and theoretical analysis based on the Boltzmann equation.Both the MD and theoretical results show that the lattice thermal conductivity dramatically decreases with the increasing of vacancy concentration at 400 and 500 K.In addition,the dependence of vacancy concentration on the thermal conductivity of Ge thin films becomes less sensitive as the temperature increases.Theoretical results also confirm that the major part of the lattice thermal conductivity reduction is associated with the point-defect scattering and phonon-phonon scattering processes.     

Formation of Nanocrystalline Structures under Germanium and Indium Electrodeposition

The processes of electrodeposition of Ge and Ge–In from ammonia-tartrate solutions have been studied. The nature of interactions in thin-film systems obtained by germanium and indium codeposition has been investigated by means of potentiodynamic voltammetry in the inversion mode. The role of electrodesurface modification has been emphasized for deposition of a germanium film of a preset thickness from aqueous solutions. As was shown by the atomic force microscopy study, glossy films with a nanocrystalline structure had been formed. It has been established that, to develop silicon–germanium technologies, deposition of thin films must be performed from ionic liquids.     

磁控溅射ZrN薄膜厚度对其色度的影响

采用中频非平衡磁控溅射技术在镜面不锈钢板上制备了ZrN薄膜,通过改变镀膜时间控制ZrN薄膜的厚度。用色差仪测定了不同厚度ZrN薄膜的L*,a*和b*值,绘制出不同厚度ZrN薄膜的L*,a*和b*值的变化曲线图,得出膜层厚度对薄膜色度的影响规律:膜层厚度低于63.7nm时,随着膜层厚度的增加,L*和a*值无变化,b*值呈线性递增,且颜色逐渐趋于金黄色;膜层厚度高于63.7nm时,随着膜层厚度的增加,薄膜颜色坐标未有明显变化,颜色为稳定的金黄色。     

Annealing of intrinsic stresses in sputtered TiN films: The role of thickness-dependent gradients of point defect density

Morphology, structure and thermal behavior of magnetron sputtered TiN thin films with the thickness in the range 100-2900 nm are characterized. The films are thermally cycled and the relationship between film thickness, defect density and the intrinsic stress relaxation is analyzed. The results indicate that the residual stresses in the as-deposited films and the amount of stress relaxation depend decisively on the specific depth gradient of point defects originating from film evolution during growth. The compressive stresses, representing different driving forces and the amount of stress relaxation decrease, while the onset temperature of stress relaxation increases with increasing film thickness.