共查询到18条相似文献,搜索用时 93 毫秒
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为建立国家法定电压基准,中国计量科学研究院(NIM)对1-V和10-V约瑟夫森串联结阵电压标准进行了研究。其中结阵分别是由德国的PTB,日本的ETL,美国的NIST和韩国的KRISS提供的。采用的微波源是一个锁定到10MH_z频率标准上的高稳定高功率的85GH_z的G_aA_s耿氏管振荡器。所获得的1_v和10-V电压的总不确定度分别是9E-9和6E-9。 相似文献
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在可编程约瑟夫森量子电压标准系统中,快速并准确地计算各约瑟夫森子结阵的偏置状态是实现量子电压精准输出的前提。传统的枚举-索引算法通过遍历所有可能的偏置组合以寻找最优解,因此计算效率较低,难以适应量子电压非周期性连续变换输出等特殊应用场景。基于此,提出了一种面向三进制可编程约瑟夫森结阵的偏置组合算法。首先根据各子结阵中包含的约瑟夫森单结数量特征对子结阵进行自适应分组,并据此快速计算预偏置组合;进一步地,结合近似计算方法和量化误差补偿方法,克服预偏置组合中可能存在的子结阵失效、亚分辨率设计等特殊问题。实验结果表明,该算法在多种条件下均能找到最优偏置组合,并且计算效率明显优于传统的枚举-索引算法。 相似文献
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自1993年1V结阵约瑟夫森电压标准正常运行以来,就开始对国家电压副基准进行了连续的监测。经过近四年的连续测量发现:国家副基准电池组051中的十个标准电池的电动势都呈上升趋势,其中最大的051-2达到0.204μV/年,最小的051-8达到0.044μV/年,十个标准电池的电动势的算术平均值的变化速率为+0.081μV/年,并且随时间几乎成直线上升关系。 相似文献
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1995年11月3-10日,中国计量科学研究院的1V约瑟夫森结阵电压基准与国际计量局的1V约瑟夫森结阵电压基准之间进行了直接比对,比对在中国计量科学院研究进行,比对结果的综合不确定度为:实际测量标准电池的比对结果。 相似文献
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Clark A. Hamilton Charles Burroughs Kao Chieh 《Journal of research of the National Institute of Standards and Technology》1990,95(3):219-235
This paper begins with a brief discussion of the physical principles and history of Josephson effect voltage standards. The main body of the paper deals with the practical details of the array design, cryoprobe construction, bias source requirements, adjustment of the system for optimum performance, calibration algorithms, and an assessment of error sources for the NIST-developed Josephson array standard. 相似文献
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根据SNS型双路约瑟夫森结阵的驱动原理以及结阵分段特点,提出了平衡三进制驱动算法,实现了双路约瑟夫森结阵偏置状态的快速计算。根据约瑟夫森结阵的偏置状态以及组合方式,采用节点电压法,准确合成了双路阶梯波交流量子电压的台阶电压值,最终实现了最小分辨率为2个结,有效位为15位的交流量子电压输出。双路交流量子电压互测实验结果表明,合成交流量子电压的最大误差为0.06 μV,双路信号同步性测试实验中,两个通道的相位差为-0.01 μrad,证明了合成双路交流量子电压具有较高的幅值准确度和相位同步性。 相似文献
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We coupled the radiation emitted by arrays of Josephson junctions oscillators to detector arrays of small Josephson junctions. The number of junctions in the detector array ranges up to 1536, which is typical for a 1V standard array operation. Evidence is presented that both uniform coupling of the emitted radiation over all the small junctions arrays and coherent emission of the Josephson oscillators can be achieved. PACS numbers: 74.50. + r, 74.40. + k. 相似文献
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通过溅射Nb膜张力与氩(Ar)压强的关系,超导转变温度Tc,室温阻扰与液氮温度阻抗比RRT/RLN2,沉积中Ar浓度CAr与负偏压关系的测量和扫描电子显微镜的观察分析,对约瑟夫森结Nb电极作了研究。发现Ar压强在1.1Pa时,Nb膜呈现无应力状态;低负偏压下沉积的Nb膜晶粒结构是由致密膜到圆柱状。在偏压Ub=-50V时,获得表面致密均匀、晶粒结构合适的Nb膜。对Nb膜用阳极氧化电压谱图(AVS)分析,证实沉积的Nb膜内不存在氧化物、寄生结和分层界面。 相似文献
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A. S. Katkov 《Measurement Techniques》2005,48(2):175-179
A comparison standard is developed in the form of a small voltage standard based on the Josephson effect whose metrological characteristics make it possible to compare stationary voltage standards with uncertainty less than 10–9. The standard was used in key comparisons of national voltage standards within the framework of Euromet Project N 723.__________Translated from Izmeritelnaya Tekhnika, No. 2, pp. 48–51, February, 2005. 相似文献
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Yuriy Makhlin Gerd Schön Alexander Shnirman 《Applicable Algebra in Engineering, Communication and Computing》2000,10(4-5):375-382
Among the physical realizations of the elements required for quantum computation nano-scale electronic devices [2, 10, 12,
16] are very promising. They can be easily integrated into electronic circuits and scaled up to large numbers of qubits. Here
we describe qubits based on low-capacitance Josephson junctions. In these systems Coulomb blockade effects allow the control
of the charge on a superconducting island. They constitute quantum bits, with logical states differing by the charge on one
island. Single- and two-bit operations can be performed by manipulating applied gate voltages. The phase coherence time is
sufficiently long to allow a series of these steps. In addition to the manipulation of qubits, the resulting quantum state
can be read out by coupling a single-electron transistor capacitively to the qubit.
Received: October 23, 1998; revised version: September 21, 1999 相似文献