Effect of composition and grain size on dielectric,ferroelectric and induced strain behavior of PLZT/ZrO2 composites

Lead lanthanum zirconate titanate ceramics (PLZT) are well known for their excellent dielectric, piezoelectric and ferroelectric properties. In this study, PLZT 9/70/30, 9/65/35 and 9/60/40 ceramics were prepared by vibro-milling mixed-oxide method. All compositions of powders were uniaxial pressed in pellets and sintered at the temperatures of 1200–1275 °C with various soaking times of 2, 4 and 6 h. The X-ray diffraction (XRD) patterns confirmed that all the PLZT samples had perovskite structure with ZrO₂ as a second phase and PLZT/ZrO₂ composite structure was formed. Dielectric behavior at the frequency of 1 kHz showed broad peak indicating relaxor ferroelectric behavior and the difference of the temperature at maximum dielectric at different frequencies increased when Zr:Ti ratio increased. Polarization with electric field (P-E loop) at room temperature showed that when Zr:Ti ratio increased, the coercive field decreased resulting from crystal structure change from tetragonal to rhombohedral. Induced strain with electric field depended on microstructure where the value of S_max/E_max tended to decrease with increasing grain size. It can be concluded that dielectric and ferroelectric behavior predominantly depended on composition of PLZT ceramics and induced strain behavior predominantly depended on grain size of PLZT ceramics.     

Effect of CuO addition on magnetic and electrical properties of Sr2Bi4Ti5O18 lead-free ferroelectric ceramics

The effect of CuO addition on magnetic and electrical properties of Sr₂Bi₄Ti₅O₁₈ (SBT) lead-free bismuth layered structure ferroelectric ceramics have been studied and reported. Interestingly, the prepared samples exhibit multiferroic behavior with the coexistence of magnetic and ferroelectric phase transition temperature. Magnetic phase transition with Neel׳s temperature (T_N) of 657 K is observed at 0.75 mol% of CuO added SBT ceramics, which is higher than the well known multiferroic BiFeO₃ (643 K) and the ferroelectric phase transition with Curie temperature (T_C) of 587 K is observed at 1 mol% of CuO added SBT ceramics, which is relatively higher than the reported pure SBT ceramics (558 K). Further, the electrical properties such as dielectric, ferroelectric, piezoelectric, leakage current density characteristics and optical properties were investigated as a function of x (x=0, 0.25, 0.5, 0.75 and 1 mol%). Presence of strong magnetic super-exchange interactions in CuO and the creation of oxygen vacancies play a vital role in the enhancement of magnetic and electrical properties of CuO doped SBT ceramics. Moreover, the present results indicate that, small amount (0.25 mol%) of CuO addition in SBT ceramics enhances the electrical properties significantly and vice versa, large amount (0.75 mol%) of CuO addition enhances the magnetic properties. Thus, the presence of magneto-electric coupling effect was observed in CuO doped Sr₂Bi₄Ti₅O₁₈ ferroelectric ceramics.     

Densification behavior and electrical properties of CuO-doped Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 ternary ceramics

CuO modified Pb(In_1/2Nb_1/2)O₃–Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PIN–PMN–PT) ternary relaxor based ferroelectrics with the composition near the morphotropic phase boundary were synthesized by two-step columbite precursor method. The introduction of CuO significantly improved the sinterability of PIN–PMN–PT ceramics, resulting in the full densification of samples at lower sintering temperatures. It also profoundly modified the crystal structure and fracture mode of the ceramics. Properly increasing CuO content led to the disappearance of rhombohedral-tetragonal phase transition, remarkably improved the Curie temperature (T_c), and made the ceramics more relaxorlike. The ternary ceramics doped with 0.25 wt% CuO possessed optimum piezoelectric properties (d₃₃=584 pC/N, d₃₃^*=948 pC/N, and k_p=0.68), high ferroelectric properties (E_c=9.9 kV/cm, and P_r=33.1 μC/cm²), low dielectric loss (tan δ=0.9%), and wider temperature usage range (T_c=225 °C). The obtained properties are much higher than those of previously reported PIN–PMN–PT based ceramics, indicating that CuO doped PIN–PMN–PT is a promising candidate for electromechanical applications with high performance and wide temperature/electric field usage ranges.     

Low temperature sintering of lead-free Bi0.5(Na0.82K0.18)0.5TiO3 piezoelectric ceramics by co-doping with CuO and Nb2O5

Effect of excess CuO additive on the sintering behavior and piezoelectric properties of Bi_0.5(Na₈₂K_0.18)_0.5TiO₃ ceramics was investigated. The addition of small amount of excess CuO as low as 1 mol% was quite effective to lower the sintering temperature (T_s) of BNKT ceramics down to 975 °C while their piezoelectric properties were degraded by Cu doping. However, the electric field-induced strain was markedly enhanced by further addition of Nb₂O₅ with CuO without elevating T_s. The normalized strain S_max/E_max of 427 pm/V was obtained with a specimen sintered with 0.02 mol CuO and 0.03 mol Nb₂O₅ in excess.     

Effect of CuO/MnO additives on microstructure and microwave dielectric properties of 3ZrO2-3TiO2-ZnNb2O6 ceramics

The effect of CuO/MnO additives on phase composition, microstructures, sintering behavior, and microwave dielectric properties of 3ZrO₂-3TiO₂-ZnNb₂O₆ (3Z-3T-ZN) ceramics prepared by conventional solid-state route were systematically investigated. CuO/MnO doped ceramics exhibited a main phase of α-PbO₂-structured ZrTi₂O₆ and a secondary phase of rutile TiO₂. SEM results showed that the grain size of MnO doped ceramics became larger with increasing amount of dopants. The presence of CuO/MnO additives effectively reduced the sintering temperature of 3Z-3T-ZN ceramics to 1220 °C. MnO doped into ceramics could enhance the Q×f values significantly. The 0.5 wt% CuO doped 3Z-3T-ZN ceramics with 0.5 wt% of MnO, sintered at 1220 °C for 4 h, was measured to show superior microwave dielectric properties, with an ε_r of 41.02, a Q×f value of 44,230 GHz (at 5.2 GHz), and τ_f value of +2.32 ppm/°C.     

Large strain response in (Mn,Sb)–modified (Bi0.5Na0.5)0.935Ba0.065TiO3 lead–free piezoelectric ceramics

Lead–free piezoelectric ceramics (Bi_0.5Na_0.5)_0.935Ba_0.065Ti_1–x(Mn_0.5Sb_0.5)_xO₃ (BNBT6.5–xMS, x=0.005, 0.010, 0.015, 0.020) were prepared by conventional solid state reaction sintering technique. All ceramics present a pure perovskite phase structure, indicating that (Mn, Sb) has completely diffused into the BNBT6.5 lattice in the studied components. The addition of (Mn, Sb) disrupted the ferroelectric long–range order and promoted the electric field induced strain response. At x=0.015, a large electric field–induced unipolar strain of 0.48% (at an applied electric field of 80 kV/cm) with normalized strain d₃₃^*(S_max/E_max) of 602 pm/V are achieved. Temperature dependent measurements of both polarization and strain from room temperature to 120 °C were also studied, and the results suggest that the origin of the large strain is due to a reversible field–induced non–polar relaxor phase to polar ferroelectric phase transformation.     

Phase structure,piezoelectric, ferroelectric,and electric-field-induced strain properties of Nb-modified 0.8Bi0.5Na0.5TiO3−0.2Sr0.85Bi0.1TiO3 ceramics

0.8Bi_0.5Na_0.5Ti_(1-x)Nb_xO₃−0.2Sr_0.85Bi_0.1TiO₃ (BNT-SBT-xNb, x = 0.00, 0.01, 0.02, and 0.03) piezoelectric ceramics were prepared by traditional solid state reaction and the influence of Nb substitution on the phase structure, ferroelectric, piezoelectric, and electric-field-induced strain properties in BNT-SBT ceramics were studied. XRD results exhibited that Nb⁵⁺ ions could fully diffuse into BNT-SBT structure to form a solid solution when x = 0.01. P-E loops and S-E curves suggested that the ferroelectric phase transformed to ergodic relaxor state (FE-to-ER) with the increasing the amount of Nb additive, indicating the ferroelectric long-ranged order was disturbed by the excess of Nb. With increasing Nb doping, phase transition temperature from normal ferroelectric to ergodic relaxor (short for T_F-R) could be reduced from 120 °C to 40 °C. Furthermore, for sample with x = 0.01, the normalized strain d₃₃^* got a maximum value ~571 pm/V due to the phase transition from ergodic relaxor to ferroelectric (ER-to-FE) under electric field.     

Lead-free Bi1/2(Na0.82K0.18)1/2TiO3 relaxor ferroelectrics with temperature insensitive electrostrictive coefficient

The electric field-induced strain of Bi_1/2(Na_0.82K_0.18)_1/2TiO₃ (BNKT) ceramics modified with BaZrO₃ (BZ) was investigated as a function of composition and temperature. Unmodified BNKT ceramics revealed a typical ferroelectric butterfly-shaped bipolar S–E loop at room temperature, whose normalized strain (S_max/E_max) showed a significant temperature coefficient of 0.38 pm/V/K. As the BZ content increased in the solid solution up to 5 mol%, the ferroelectric BNKT gradually transformed to a relaxor. Finally, 5 mol% BZ-modified BNKT ceramics showed a typical electrostrictive behavior with a thermally stable electrostrictive coefficient (Q₃₃) of 0.025 m⁴/C², which is comparable to that of Pb(Mg_1/3Nb_2/3)O₃ (PMN) ceramics that have been primarily used as Pb-based electrostrictive materials.     

NaNbO3 templates-induced phase evolution and enhancement of electromechanical properties in <00l> grain oriented lead-free BNT-based piezoelectric materials

Recently developed Bi_0.5Na_0.5TiO₃(BNT)-based piezoceramics face two urgent obstacles: high driving field required to trigger large strain and poor temperature stability. Highly oriented (1-x)(0.83Bi_0.5Na_0.5TiO₃-0.17Bi_0.5K_0.5TiO₃)-xNaNbO₃ (BNT-BKT-xNN) piezoceramics were synthesized using NN templates to resolve both obstacles. Measurements of polarization and strain hysteresis loops as well as phase transition temperature revealed a phase evolution from ergodic relaxor to ferroelectric phases, generating a high strain of 0.43% and large S_max/E_max = 720pm/V for textured BNT-BKT-4NN ceramics. The field-dependent strain was largely depended on the degree of texturing. Most intriguingly, grain-oriented specimens provided excellent actuating performance characterized by both large S_max/E_max = 693 pm/V at a low driving field of 45 kV/cm and enhanced temperature stability with S_max/E_max = 537pm/V at 120 °C. This was basically ascribed to the facilitated switching between ergodic relaxor and ferroelectric phases owing to the grain-oriented structure. As a consequence, design of <00l> oriented microstructure opens the possibility to produce efficient BNT-based piezoceramics for transferral into real-world applications.     

Lead-free BaTiO3-Bi0.5Na0.5TiO3-Na0.73Bi0.09NbO3 relaxor ferroelectric ceramics for high energy storage

A series of (1-x)(0.65BaTiO₃-0.35Bi_0.5Na_0.5TiO₃)-xNa_0.73Bi_0.09NbO₃ ((1-x)BBNT-xNBN) (x = 0–0.14) ceramics were designed and fabricated using the conventional solid-state sintering method. The microstructure, dielectric property, relaxor behavior and energy storage property were systematically investigated. X-ray diffraction results reveal a pure perovskite structure and dielectric measurements exhibit a relaxor behavior for the (1-x)BBNT-xNBN ceramics. The slim polarization electric field (P-E) loops were observed in the samples with x ≥ 0.02 and the addition of Na_0.73Bi_0.09NbO₃ (NBN) could decrease the remnant polarization (P_r) of the (1-x)BBNT-xNBN ceramics obviously. The sample with x = 0.08 exhibits the highest energy storage density of 1.70 J/cm³ and the energy storage efficiency of 82% at 172 kV/cm owing to its submicron grain size and high relative density. These results show that the (1-x)BBNT-xNBN ceramics may be promising lead-free materials for high energy storage density capacitors.     

Dielectric,ferroelectric and field-induced strain response of lead-free (Fe,Sb)-modified (Bi0.5Na0.5)0.935Ba0.065TiO3 ceramics

Lead-free piezoelectric ceramics (Bi_0.5Na_0.5)_0.935Ba_0.065Ti_1−x(Fe_0.5Sb_0.5)_xO₃ (BNBT6.5–xFS, x=0.005, 0.010, 0.015, 0.020) were prepared by a conventional solid sintering technique. The effects of B-site doping of (Fe, Sb) on the phase structure, microstructure, dielectric, ferroelectric, and piezoelectric properties of BNBT6.5 ceramics were systematically investigated. Results showed that (Fe, Sb) can completely diffuse in the BNBT6.5 lattice in the all studied components. The addition of (Fe, Sb) destroyed the ferroelectric long-range order, and thus promoted the electric field induced strain response. The maximum electric field-induced strain (S_max=0.37%) with normalized strain (d₃₃*=S_max/E_max=454 pm/V) at an applied electric field of 80 kV/cm was obtained at x=0.015. Temperature dependent measurements of both polarization and strain from room temperature to 120 °C suggested that the origin of the large strain is due to a reversible field-induced ergodic relaxor to ferroelectric phase transformation.     

Low-temperature sintered Bi0.5Na0.5TiO3-SrTiO3 incipient piezoceramics and the co-fired multilayer piezoactuator thereof

Lead-free Bi_0.5Na_0.5TiO₃-SrTiO₃ incipient piezoceramics with Li₂CO₃ and MnO₂ additives were successfully fabricated at low firing temperature for applications in co-fired multilayer piezoactuators. The addition of Li₂CO₃ effectively shifted the sintering temperature from 1230 °C down to 1075 °C, where the ceramics were co-fired with a Ag/Pd (75/25) inner electrode. The prototype actuators were prepared by tape-casting method using ceramics with the composition of 0.74Bi_0.5Na_0.5TiO₃-0.26 SrTiO₃ + 0.15 wt%MnO₂ + 0.45 wt%Li₂CO₃. The total number of active layers was 13, and each ceramic layer had a thickness of 60 μm. The actuator output a large strain up to ∼0.20% at a driving field of 4 kV/mm, due to the field-induced phase transition between the ergodic relaxor and ferroelectric phases. The excellent voltage-displacement performance of the prototype actuator demonstrates the potential for industrial applications.     

Low-temperature sintering of Ti1−xCux/3Nb2x/3O2 (x = 0.23) microwave dielectric ceramics with CuO and B2O3 addition

The influence of CuO and B₂O₃ addition on the sintering behavior, microstructure and microwave dielectric properties of Ti_1?xCu_x/3Nb_2x/3O₂ (TCN, x = 0.23) ceramic have been investigated. It was found that the addition of CuO and B₂O₃ successfully reduced the sintering temperature of TCN ceramics from 950 to 875 °C. X-ray diffraction studies showed that addition of CuO-B₂O₃ has no effect on the phase composition. The TCN ceramics with 0.5 wt% CuO-B₂O₃ addition showed a high dielectric constant of 95.63, τ_f value of + 329 ppm/°C and a good Q × f value of 8700 GHz after sintered at 875 °C for 5 h, cofirable with silver electrode.     

Polarization and strain behaviors of 0.74BiNaTiO3–0.26SrTiO3/Bi0.5(Na0.8K0.2)0.5TiO3 ceramic composite

We investigated the temperature- and frequency-dependent polarization and strain of two bismuth-based perovskite materials, a matrix material and a seed material, with which we formed a composite whose properties we likewise investigated. The chosen matrix material is 0.74Bi_0.5Na_0.5TiO₃–0.26SrTiO₃ (BNT-ST) which has a transition point of ~65 °C, from the relaxor to the ferroelectric phase (T_R-F). The seed material was Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ (BNKT), which possesses a T_R-F of 120 °C. Different polarization and strain behaviors were observed in the BNT-ST/BNKT composite at different test temperatures. At T=25 °C (<T_R-F of the relaxor BNT-ST), the composite exhibited a hysteretic polarization loop and parabolic strain curves which involve an ergodic relaxor-to-normal ferroelectric phase transition with application of an external electric field and the reverse ferroelectric-to relaxor phase transition with removal of the field. When T=80 and 100 °C (>T_R-F °f the relaxor BNT-ST and <T_R-F of the ferroelectric BNKT), the BNT-ST/BNKT has a slim polarization loop and strain magnitudes that are slightly increased from those of pure BNT-ST. When T=120 °C (~T_R-F of the ferroelectric BNKT), the composite has a very slim polarization loop and strain behavior with values that are almost same as those of pure BNT-ST. In addition, the P-S relation for the BNT-ST/BNKT is identical to that of BNT-ST as the operating frequency increases up to 100 Hz. This may be because the polarization of BNT-ST is lower than that of BNKT. The electric field-induced polarization and strain of the BNT-ST/BNKT composite with respect to the temperature and frequency are related to the thermal stability of the ferroelectric seed and the degree of the phase transition in the relaxor matrix.     

Low-temperature-sintered Bi0.5Na0.5TiO3-based lead-free ferroelectric ceramics with good piezoelectric properties

Li₂CO₃ has been used as a sintering aid for fabricating lead-free ferroelectric ceramic 0.93(Bi_0.5Na_0.5TiO₃)-0.07BaTiO₃. A small amount (0.5 wt%) of it can effectively lower the sintering temperature of the ceramic from 1200 °C to 980 °C. Unlike other low temperature-sintered ferroelectric ceramics, the ceramic retains its good dielectric and piezoelectric properties, giving a high dielectric constant (1570), low dielectric loss (4.8%) and large piezoelectric coefficient (180 pC/N). The “depolarization” temperature is also increased to 100 °C and the thermal stability of piezoelectricity is improved. Our results reveal that oxygen vacancies generated from the diffusion of the sintering aid into the lattices are crucial for realizing the low temperature sintering. Owing to the low sintering temperature and good dielectric and piezoelectric properties, the ceramics, especially of multilayered structure, should have great potential for practical applications.     

Microstructure effects on BaTiO3/BaTi0.8Zr0.2O3 composites properties

The dielectric, pyroelectric and ferroelectric properties of bilayered BaTiO₃/BaTi_0.8Zr_0.2O₃ ceramics are described and correlated with their microstructure. Different sintering times are employed to change the microstructure and promote interdiffusion between the layers. The effects of constrained sintering on both compositions are analyzed and their properties are compared to that of single phase BaTiO₃ and BaTi_0.8Zr_0.2O₃ ceramics. The results show that, at sintering times until 2 h, the bilayer properties are predominantly affected by the presence of residual stresses. Only after 4 h sintering, the properties are predominantly affected by interdiffusion between the layers.     

Phase–composition and temperature dependence of electrocaloric effect in lead–free Bi0.5Na0.5TiO3–BaTiO3–(Sr0.7Bi0.2□0.1)TiO3 ceramics

The (0.94–x)Bi_0.5Na_0.5TiO₃–0.06BaTiO₃–x(Sr_0.7Bi_0.2□_0.1)TiO₃ (BNT–BT–xSBT, 0 ≤ x ≤ 0.24) solid solution ceramics were synthesized via a conventional solid–state reaction method and the correlation of phase structure, piezoelectric, ferroelectric properties and electrocaloric effect (ECE) was investigated in detail. The ECE in lead–free BNT–BT–xSBT ceramics was measured directly using a home–made adiabatic calorimeter with maximum adiabatic temperature change ΔT = 0.4 K with x = 0.08 under the electric field E = 6 kV/mm at room temperature. The position of maximum ECE was found in the vicinity of nonergodic and ergodic phase boundary, where the maximum change in entropy occurs as a result of the field–induced phase transformation between the ergodic and long–range ferroelectric phase. Besides, the mechanism for the shift of ECE peak is discussed in detail. Finally, the temperature dependence of ECE for BNT–BT–xSBT (x = 0, 0.04 and 0.08) was also investigated. This work may present a guideline for designing BNT–based ferroelectric relaxor ceramics for EC cooling technologies.     

Relaxor behavior and ferroelectric properties of a new Ba4SmFe0.5Nb9.5O30 tungsten bronze ceramic

Unfilled tungsten bronze ceramics with a composition of Ba₄SmFe_0.5Nb_9.5O₃₀ were prepared by the conventional solid-state sintering method. The phase, microstructure, dielectric and ferroelectric properties were studied. Room temperature XRD results indicated that the ceramic occurs in the tetragonal space group P4bm phase with cell parameters of a=b=12.4712(2) Å and c=3.9430(2) Å. The temperature-dependent dielectric properties, XRD data and Raman spectra data indicated that BSFN ceramics exhibit no phase changes from 35 °C to 450 °C. Fitting of a Vogel-Fulcher relationship with an activated energy E_a of 0.11 eV indicates an unambiguous dielectric relaxor state near room temperature. Furthermore, the BSFN ceramics exhibited residual polarization and coercive field of 3.45 µC/cm² and 24.65 kV/cm, respectively.     

Phase structure,ferroelectric properties,and electric field-induced large strain in lead-free 0.99[(1−x)(Bi0.5Na0.5)TiO3-x(Bi0.5K0.5)TiO3]–0.01Ta piezoelectric ceramics

Lead-free 0.99[(1−x)(Bi_0.5Na_0.5)TiO₃-x(Bi_0.5K_0.5)TiO₃]–0.01Ta piezoelectric ceramics were prepared by a conventional solid-state reaction process. The ferroelectric properties, and strain behaviors were characterized. Increase of the (Bi_0.5K_0.5)TiO₃ content induces a phase transition from coexistence of ferroelectric tetragonal and rhombohedral to a relaxor pseudocubic phase. Accordingly, the ferroelectric order is disrupted significantly with the increase of (Bi_0.5K_0.5)TiO₃ content and the destabilization of the ferroelectric order is accompanied by an enhancement of the unipolar strain, which peaks at a value of 0.35% (corresponding to a large signal d₃₃ of 438 pm/V) in samples with 20 mol% (Bi_0.5K_0.5)TiO₃ content. Temperature dependent measurements of both polarization and strain from room temperature to 120 °C suggested that the origin of the large strain is due to a reversible field-induced nonpolar pseudocubic-to-polar ferroelectric phase transformation.     

Low dielectric loss of Bi-doped BaZr0.15Ti0.85O3 ceramics for high-voltage capacitor applications

BaZr_0.15Ti_0.85O₃ ceramics are prepared via the conventional solid state reaction method. The effects of Bi₂O₃·3TiO₂ doped on dielectric properties and breakdown strength of BaZr_0.15Ti_0.85O₃ ceramics are systematically discussed. Doping of Bi₂O₃·3TiO₂ can obviously improve the breakdown strength and reduce the dielectric loss of the material. It is attributed to the Bi³⁺ substituted Ba²⁺ is an unequal ion substitution, and two Bi³⁺ substitute three Ba²⁺ to produce an A vacancy, thereby increasing the lattice energy and promoting the diffusion and migration of the particles during the sintering process, promoting the sintering and reducing the sintering temperature. However, the dielectric constant of the material is decreased. When the amount of Bi₂O₃·3TiO₂ is 12 mol%, the minimum dielectric loss tanδ = 0.0009, the maximum breakdown strength is E_b = 15.09 kV/mm, the insulation resistivity is 3.52 × 10¹¹ Ω cm. The energy storage density of the BaZr_0.15Ti_0.85O₃ ceramic samples doped with Bi₂O₃·3TiO₂ varies from 0.008 J/cm³ to 0.012 J/cm³.