Effect of Na0.5Bi0.5TiO3 on dielectric properties of BaTiO3 based ceramics

In this work, Na_0.5Bi_0.5TiO₃ (NBT) was used to improve the high temperature dielectric properties of Nb, Co-doped BaTiO₃ (BT). Different x was selected (x = 0, 0.02, 0.04, 0.06, 0.08, 0.1, 0.2, 0.3, 0.4) to optimize the ratio of BT to NBT in (1 ? x) BT–xNBT solid solution. The dielectric constant of the original X7R material is about 4900 at room temperature, decreasing to 2500 with NBT addition (x = 0.2). Of important is that the temperature stability was improved with dielectric constant variation being less than ±15% up to 160 °C.     

Intermediate-temperature conductivity of B-site doped Na0.5Bi0.5TiO3-based lead-free ferroelectric ceramics

Na_0.5Bi_0.5TiO₃ (NBT) based oxide-ion conductor ceramics have great potential applications in intermediate-temperature solid oxide fuel cells (SOFCs) and oxygen sensors. Na_0.5Bi_0.49Ti_1−xMg_xO_3−δ ceramics with x=0, 0.01, 0.02, 0.03, 0.05 and 0.08 were prepared by conventional solid-state reaction. XRD measurement and SEM analysis revealed the formation of pure perovskite structures without secondary phase. MgO doping greatly decreased the sintering temperature and inhibited grain growth. AC impedance spectroscopy measurement was adopted to measure the total conductivity, which was found to increase with MgO doping content ranging from 0 to 3 mol% and subsequently to decrease. High oxygen ionic conductivity σ_t=0.00629 S/cm was achieved for sample doped with 3 mol% MgO at 600 °C in air atmosphere.     

Synthesis of Na0.5Bi0.5TiO3 whiskers and their nanoscale piezoelectricity

The perovskite structured lead-free system Na_0.5Bi_0.5TiO₃ (NBT) whiskers were synthesized from whiskers of layered tunnel structured Na₂Ti₆O₁₃ (NT), using a topochemical route. Both NT and NBT whiskers show high aspect ratios with an average length of 15 µm and diameter of 1 µm. By prolonging the reaction time from 2 h to 6 h at 900 °C, NT whiskers with monoclinic phase completely transformed to NBT whiskers with pseudocubic phase. Typical strip-like nanodomains are observed in a NBT whisker, which are parallel to each other. The piezoelectric response amplitude for a NBT whisker indicates a large electric field induced strain, corresponding to a S_max/E_max value of as high as 300 pm/V. This work provides an in-depth instruction to prepare pure NBT whiskers, and gives the detailed piezoelectricity of NBT whiskers to promote their applications in energy harvesting and micro-electromechanical systems.     

High-temperature dielectric and relaxation behavior of Yb-doped Bi0.5Na0.5TiO3 ceramics

Microstructure, phase transition and dielectric properties of Yb-doped Bi_0.5Na_0.5TiO₃ (BNT) ceramics were investigated. It is found that ytterbium promotes the grain growth and densification of the ceramics while Ti-rich impurity appears due to the compensation of Ti-vacancy. The dielectric operational temperature range of the ceramics with a±15% tolerance was greatly broaden until 500 °C by ytterbium doping. Meanwhile, the diffuseness of the diffuse phase transition increases with the increase of doping Yb. BNT ceramics with 3 mol% Yb doping shows a near-plateau dielectric behavior in a broad temperature range from 147 to 528 °C and a low dielectric loss (<0.025) from 154 to 356 °C, indicating that it is a promising material for applications in high-temperature capacitor.     

Microstructure,ferroelectric and piezoelectric properties of Bi0.5K0.5TiO3-modified BiFeO3–BaTiO3 lead-free ceramics with high Curie temperature

The effects of composition, sintering temperature and dwell time on the microstructure and electrical properties of (0.75 ? x)BiFeO₃–0.25BaTiO₃–xBi_0.5K_0.5TiO₃ + 1 mol% MnO₂ ceramics were studied. The ceramics sintered at 1000 °C for 2 h possess a pure perovskite structure and a morphotropic phase boundary of rhombohedral and pseudocubic phases is formed at x = 0.025. The addition of Bi_0.5K_0.5TiO₃ retards the grain growth and induces two dielectric anomalies at high temperatures (T₁ ～ 450–550 °C and T₂ ～ 700 °C, respectively). After the addition of 2.5 mol% Bi_0.5K_0.5TiO₃, the ferroelectric and piezoelectric properties of the ceramics are improved and very high Curie temperature of 708 °C is obtained. Sintering temperature has an important influence on the microstructure and electrical properties of the ceramics. Critical sintering temperature is 970 °C. For the ceramic with x = 0.025 sintered at/above 970 °C, large grains, good densification, high resistivity and enhanced electrical properties are obtained. The weak dependences of microstructure and electrical properties on dwell time are observed for the ceramic with x = 0.025.     

Effect of B2O3 on the sintering and microwave dielectric properties of M-phase LiNb0.6Ti0.5O3 ceramics

The effect of B₂O₃ addition on the sintering, microstructure and the microwave dielectric properties of LiNb_0.6Ti_0.5O₃ ceramics have been investigated. It is found that low-level doping of B₂O₃ (≤2 wt.%) can significantly improve the densification and dielectric properties of LiNb_0.6Ti_0.5O₃ ceramics. Due to the liquid phase effect of B₂O₃ addition, LiNb_0.6Ti_0.5O₃ ceramics could be sintered to a theoretical density higher than 95% even at 880 °C. No secondary phase was observed for the B₂O₃-doped ceramics. There is no obvious degradation in dielectric properties for the ceramics with B₂O₃ additions. In the case of 1 wt.% B₂O₃ addition, the ceramics sintered at 880 °C show good microwave dielectric properties of ɛ_r = 70, Q × f = 5400 GHz, τ_f = −6.39 ppm/°C. It represents that the ceramics could be promising for multilayer low-temperature co-fired ceramics (LTCC) applications.     

Effect of Ba0.85Ca0.15Ti0.90Zr0.10O3 content on the microstructure and electrical properties of Bi0.51(Na0.82K0.18) 0.50TiO3 ceramics

(1?x)Bi_0.51(Na_0.82K_0.18)_0.50TiO₃–xBa_0.85Ca_0.15Ti_0.90Zr_0.10O₃ [(1?x)BNKT–xBCTZ] ceramics were prepared by the conventional solid-state method, and the effect of BCTZ content on their microstructure and electrical properties was investigated. A stable solid solution with a pure perovskite phase is formed between BNKT and BCTZ, and these ceramics have a coexistence of rhombohedral and tetragonal phases in the range of 0 ≤ x < 0.15. Their T_m and T_d values are strongly independent on the BCTZ content. Moreover, the sintering temperature strongly affects the ferroelectric and piezoelectric properties of these ceramics with x = 0.02. These ceramics with x = 0.02 exhibit an optimum electrical behavior of d₃₃ ～ 205, k_p ～ 0.25, P_r ～ 31.8 μC/cm², and E_c ～ 19.1 kV/cm together with a high T_d value of ～91 °C when sintered at 1180 °C and poled at an optimum condition. As a result, the (1?x)BNKT–xBCTZ ceramic is a promising candidate material for lead-free piezoelectric ceramics.     

Temperature-insensitive dielectric and piezoelectric properties in (1-x)K0.5Na0.5Nb0.997Cu0.0075O3-xSrZrO3 ceramics

Systematic investigation on phase transition, dielectric and piezoelectric properties of (1-x)K_0.5Na_0.5Nb_0.997Cu_0.0075O₃-xSrZrO₃ (x = 0, 0.03, 0.06, 0.09, 0.12, 0.15, abbreviated as KNNC-100xSZ) ceramics was carried out. Due to the coexistence of orthorhombic and tetragonal phase in a wide temperature range, a diffused polymorphic phase transition (PPT) region was achieved in KNNC with x ≥ 0.06. KNNC-12SZ ceramics exhibited high dielectric permittivity (∼1679), low dielectric loss (∼0.02) and small variation (Δe'/ε'_25 °C ≤ 15%) in dielectric permittivity from −78 °C to 237.3 °C. KNNC-6SZ ceramic possessed a high level of unipolar strain (∼0.15%) and maintained a smaller variation of ±12% under the corresponding electric field of 60 kV cm⁻¹ at 10 Hz from 25 °C to 175 °C. d₃₃^*, which was calculated according to the unipolar strain at 60 kV cm⁻¹, was 230 pm V⁻¹ and remained stable below 100 °C. Therefore, our work provided a new promising candidate for temperature-insensitive capacitors and piezoelectric actuators.     

Low-temperature sintered Bi0.5Na0.5TiO3-SrTiO3 incipient piezoceramics and the co-fired multilayer piezoactuator thereof

Lead-free Bi_0.5Na_0.5TiO₃-SrTiO₃ incipient piezoceramics with Li₂CO₃ and MnO₂ additives were successfully fabricated at low firing temperature for applications in co-fired multilayer piezoactuators. The addition of Li₂CO₃ effectively shifted the sintering temperature from 1230 °C down to 1075 °C, where the ceramics were co-fired with a Ag/Pd (75/25) inner electrode. The prototype actuators were prepared by tape-casting method using ceramics with the composition of 0.74Bi_0.5Na_0.5TiO₃-0.26 SrTiO₃ + 0.15 wt%MnO₂ + 0.45 wt%Li₂CO₃. The total number of active layers was 13, and each ceramic layer had a thickness of 60 μm. The actuator output a large strain up to ∼0.20% at a driving field of 4 kV/mm, due to the field-induced phase transition between the ergodic relaxor and ferroelectric phases. The excellent voltage-displacement performance of the prototype actuator demonstrates the potential for industrial applications.     

Compositional inhomogeneity and segregation in (K0.5Na0.5)NbO3 ceramics

In this report, the effects of the calcination temperature of (K_0.5Na_0.5)NbO₃ (KNN) powder on the sintering and piezoelectric properties of KNN ceramics have been investigated. KNN powders are synthesized via the solid-state approach. Scanning electron microscopy and X-ray diffraction characterizations indicate that the incomplete reaction at 700 °C and 750 °C calcination results in the compositional inhomogeneity of the K-rich and Na-rich phases while the orthorhombic single phase is obtained after calcination at 900 °C. During the sintering, the presence of the liquid K-rich phase due to the lower melting point has a significant impact on the densification, the abnormal grain growth and the deteriorated piezoelectric properties. From the standpoint of piezoelectric properties, the optimal calcination temperature obtained for KNN ceramics calcined at this temperature is determined to be 800 °C, with piezoelectric constant d₃₃=128.3 pC/N, planar electromechanical coupling coefficient k_p=32.2%, mechanical quality factor Q_m=88, and dielectric loss tan δ=2.1%.     

Effects of K0.5Bi0.5TiO3 addition on dielectric properties of BaTiO3 ceramics

(1?x)BaTiO₃–xK_0.5Bi_0.5TiO₃ (abbreviated as BT–KBT, 0.10≦x≦0.15) dielectric ceramics were prepared by a conventional oxide mixing method. The effects of KBT content on the densification, microstructure and dielectric properties of BT ceramics were investigated. The density characterization results show that the addition of KBT significantly lowered the sintering temperature of BT ceramics to about 1280 °C. The XRD results showed that the phase compositions of all samples were pure tetragonal phases. The dielectric constant and dielectric loss firstly increased and then decreased with the increase of KBT. In addition, dielectric constant and dielectric loss versus frequency were characterized in the frequency range from 100 Hz to 2 MHz. It is found that the dielectric constant and the dielectric loss changed with the increase of KBT contents regularly.     

Effects of Nb-doping on the micro-structure and dielectric properties of (Bi0.5Na0.5)TiO3 ceramics

Bismuth sodium titanate [(Bi_0.5Na_0.5)TiO₃ or BNT] ceramics incorporated with 0, 1, 5, 10, 15 and 20 mol% niobium were prepared by conventional solid state reaction method. The green bodies were sintered at 1050 °C for 2 h to obtain dense ceramics. The effects of substitution of niobium ion for titanium ion in BNT ceramics on micro-structure and dielectric properties were investigated. X-ray diffraction analysis showed the presence of a secondary phase when more than 5 mol% niobium was added. Within the solubility limit, Nb doping caused the grain size of BNTNb to be smaller than the undoped sample. The investigation of the dielectric properties showed that the transition temperature (T_c) was found to shift towards lower temperature as the content of Nb increased. In this research, the donor-type behavior and induced charged defects had significant influence on the electrical properties of Nb-doped BNT ceramics.     

High-energy storage performance in lead-free (1-x)BaTiO3-xBi(Zn0.5Ti0.5)O3 relaxor ceramics for temperature stability applications

In this paper, we prepared lead-free (1-x)BaTiO₃-xBi(Zn_0.5Ti_0.5)O₃ (x=0.04, 0.08, 0.10, and 0.14) ceramics by a conventional solid-state reaction technique. Pure perovskite structures and dense microstructures were demonstrated for all the compositions. Interestingly, it was found that the sintering temperature tended to decrease with increasing the Bi(Zn_0.5Ti_0.5)O₃ content. It should be stressed that a low sintering temperature of 1050 °C was utilized for the composition of x=0.14. Moreover, the dielectric permittivity-temperature curve became more flat and the relaxor degree became stronger with the augment in Bi(Zn_0.5Ti_0.5)O₃ content. We also conducted a detailed study on the energy storage performance for all the compositions from 25 °C to 180 °C.We found that relatively temperature-stable energy storage performance could be obtained in the compositions with x=0.08, 0.10 and 0.14 regardless of the evolution of dielectric constant during the test temperature range. In particular, due to a higher field of 12 MV m⁻¹, the discharge energy storage densities of x=0.14 could reach 0.81 J cm⁻³, 0.80 J cm⁻³, 0.78 J cm⁻³, 0.72 J cm⁻³, and 0.67 J cm⁻³ with high efficiencies of 94%, 92%, 94%, 88% and 77% at 25 °C, 50 °C, 100 °C, 150 °C, and 180 °C, respectively. All these results demonstrate the (1-x)BaTiO₃-xBi(Zn_0.5Ti_0.5)O₃ ceramics are quite promising for temperature-stable energy storage applications.     

Compositional range and electrical properties of the morphotropic phase boundary in the Na0.5Bi0.5TiO3–K0.5Bi0.5TiO3 system

We have investigated the Na_0.5Bi_0.5TiO₃–K_0.5Bi_0.5TiO₃ (NBT–KBT) system, with its complex perovskite structure, as a promising material for piezoelectric applications. The NBT–KBT samples were synthesized using a solid-state reaction method and characterized with XRD and SEM. Room-temperature XRD showed a gradual change in the crystal structure from tetragonal in the KBT to rhombohedral in the NBT, with the presence of an intermediate morphotropic region in the samples with a compositional fraction x between 0.17 and 0.25. The fitted perovskite lattice parameters confirmed an increase in the size of the crystal lattice from NBT towards KBT, which coincides with an increase in the ionic radii. Electrical measurements on the samples showed that the maximum values of the dielectric constant, the remanent polarization and the piezoelectric coefficient are reached at the morphotropic phase boundary (MPB) (? = 1140 at 1 MHz; P_r = 40 μC/cm²; d₃₃ = 134 pC/N).     

High performance lead-free piezoelectric 0.96(K0.48Na0.52)NbO3-0.03[Bi0.5(Na0.7K0.2Li0.1)0.5]ZrO3-0.01(Bi0.5Na0.5)TiO3 single crystals grown by solid state crystal growth and their phase relations

0.96(K_0.48Na_0.52)NbO₃-0.03[Bi_0.5(Na_0.7K_0.2Li_0.1)_0.5]ZrO₃-0.01(Bi_0.5Na_0.5)TiO₃ single crystals were grown for the first time by the solid state crystal growth method, using [001] or [110]-oriented KTaO₃ seed crystals. The grown single crystal shows a dielectric constant of 2720 and polarization-electric field loops of a lossy normal ferroelectric, with P_r = 45 μC/cm² and E_c = 14.9 kV/cm, while the polycrystalline samples with a dielectric constant of 828 were too leaky for P-E measurement due to humidity effects. The single crystal has orthorhombic symmetry at room temperature. Dielectric permittivity peaks at 26 °C and 311 °C, respectively, are attributed to rhombohedral-orthorhombic and tetragonal–cubic phase transitions. Additionally, Raman scattering shows the presence of an orthorhombic-tetragonal phase transition at ∼150 °C, which is not indicated in the permittivity curves but by the loss tangent anomalies. A transition around 700 °C in the high temperature dc conductivity is suggested to be a ferroelastic-paraelastic transition.     

Structural,thermal, dielectric and ferroelectric properties of K0.5Bi0.5TiO3 ceramics

Dense K_0.5Bi_0.5TiO₃ (KBT) lead-free ceramics were prepared by conventional solid reaction route. Their temperature behavior (up to 600 °C) was investigated by X-ray diffraction, DSC, dielectric spectroscopy and electric field-polarization technique. The first temperature dependent Raman scattering studies were also performed. X-ray and Raman scattering results show that samples exhibit a single perovskite structure with cubic symmetry at temperatures higher than approximately 400 °C and with coexistence of the cubic and tetragonal phases below this temperature. Two structural phase transitions between tetragonal phases in temperature range 200–225 °C and between tetragonal and cubic ones near 400 °C are observed. The content of the tetragonal phase increases with decreasing temperature and at room temperature it reaches more than 70%. Temperature- dependent P-E loops and pyroelectric data revealed a polar behavior in KBT up to about 400 °C, which means that the intermediate phase (～270–380 °C) is rather ferroelectric than antiferroelectric.     

Physical and electrical properties of Nb doped Bi0.5Na0.5[Zr0.59Ti0.41]O3

This research studied the effect of Nb doping on Bi_0.5Na_0.5[Ti_0.41Zr_0.59]O₃ (when Nb concentration = 0.00, 0.01, 0.03, 0.05, 0.07 and 0.09 mol fraction). Nb doped BNTZ ceramics were fabricated using a conventional mixed-oxide method. All samples were calcined at a temperature of 700 °C for 2 h and sintered at a temperature of 900 °C for 2 h. X-ray diffraction patterns suggested that the compounds possessed rhombohedral perovskite structure. SEM micrographs indicated that average grain size decreased as the amount of Nb additives increased. The electrical resistivity showed a decreasing trend with increasing Nb concentration due to excess charge present in the sample. The dielectric constant and dielectric loss of samples showed no particular trend when Nb was added but the optimum was observed when 0.05–0.07 Nb mol fraction was present in BNTZ ceramics. In this study, both microstructure and donor-type effects played an important role in determining electrical resistivity and dielectric properties of these ceramics.     

Dielectric and ferroelectric properties of (1 − x)BaTiO3–xBi0.5Na0.5TiO3 ceramics

Lead-free (1 − x)BaTiO₃–xBi_0.5Na_0.5TiO₃ (x = 0.01, 0.02, 0.05, 0.1, 0.2, 0.3) ferroelectric ceramics were fabricated by the conventional ceramic technique. Sintering was made at 1200 °C for 2–4 h in air atmosphere. The crystal structure was investigated by X-ray diffraction. The dielectric and ferroelectric properties were also studied. Room temperature permittivity was found to decrease as Bi_0.5Na_0.5TiO₃ (BNT) content increases. Only the sample with 0.3 mol BNT was found to have relaxor behaviour. The T_c shifted slightly only for BNT addition lower than 0.1 mol. The highest T_c (about 150 °C) was obtained for 0.2 mol BNT addition. The remanent polarization, P_r, decreases whereas the coercive field, E_c, increases monotonously as the BNT content increases.     

Relaxor behavior and ferroelectric properties of a new Ba4SmFe0.5Nb9.5O30 tungsten bronze ceramic

Unfilled tungsten bronze ceramics with a composition of Ba₄SmFe_0.5Nb_9.5O₃₀ were prepared by the conventional solid-state sintering method. The phase, microstructure, dielectric and ferroelectric properties were studied. Room temperature XRD results indicated that the ceramic occurs in the tetragonal space group P4bm phase with cell parameters of a=b=12.4712(2) Å and c=3.9430(2) Å. The temperature-dependent dielectric properties, XRD data and Raman spectra data indicated that BSFN ceramics exhibit no phase changes from 35 °C to 450 °C. Fitting of a Vogel-Fulcher relationship with an activated energy E_a of 0.11 eV indicates an unambiguous dielectric relaxor state near room temperature. Furthermore, the BSFN ceramics exhibited residual polarization and coercive field of 3.45 µC/cm² and 24.65 kV/cm, respectively.     

B-site donor and acceptor doped Aurivillius phase Bi3NbTiO9 ceramics

The electrical properties of B-site donor and acceptor doped Aurivillius phase Bi₃NbTiO₉-based ceramics have been investigated. The effect of donor and acceptor doping on the dielectric constant, coercive field, dc conductivity and piezoelectric constant are presented. The band gap of Bi₃NbTiO₉ (BNTO) is about 3.4 ± 0.2 eV, determined from high-temperature dc conductivity measurements. All of the ceramics are ferroelectrics with high Curie points (∼900 °C). In acceptor doped ceramics, a low-temperature peak in the dielectric loss tangent is explained in terms of a Debye-type relaxation that results from an oxygen ion-jump mechanism. The activation energy for the relaxation is calculated as 0.93 ± 0.05 eV. The reduction of the piezoelectric constant below 500 °C is produced by depolarization, which is produced by the switching of thermally unstable non-180° domain walls.