Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

In this work, TiO₂/ZrO₂ bilayer thin film was prepared on fluorine doped tin oxide (FTO)/glass substrates by using a simple and low-cost chemical solution deposition method. Reproducible bipolar resistive switching (RS) characteristics in Au/TiO₂/ZrO₂/FTO/glass devices are reported in this work. TiO₂/ZrO₂ bilayer thin films prepared in this work shows reversible bipolar resistive switching and unidirectional conduction performances under applying voltage and these special performances of TiO₂/ZrO₂ bilayer thin films was first reported. Obvious resistive switching performance can be observed after setting a compliance current, the ratio of high/low resistance reached about 100 at a read voltage of +0.1V and −0.1V and the RS properties showed no obvious degradation after 100 successive cycles tests. The resistive switching characteristics of Au/TiO₂/ZrO₂/FTO/glass device can be explained by electron trapping/detrapping related with the vacancy oxygen defects in TiO₂/ZrO₂ bilayer thin film layer. According to slope fitting, the main conduction mechanisms of the sample are Ohmic and Space charge limited current mechanism.     

Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications

In this article, the resistive switching (RS) behaviors in Lu₂O₃ thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu₂O₃ thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu₂O₃ thin film were characterized by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. The Ru/Lu₂O₃/ITO flexible memory device shows promising RS behavior with low-voltage operation and small distribution of switching parameters. The dominant switching current conduction mechanism in the Lu₂O₃ thin film was determined as bulk-controlled space-charge-limited-current with activation energy of traps of 0.33 eV. The oxygen vacancies assisted filament conduction model was described for RS behavior in Lu₂O₃ thin film. The memory reliability characteristics of switching endurance, data retention, good flexibility, and mechanical endurance show promising applications in future advanced memory.     

Impact of oxygen partial pressure on resistive switching characteristics of PLD deposited ZnFe2O4 thin films for RRAM devices

In this paper we show resistive switching characteristics of ZnFe₂O₄ thin films grown by pulsed laser deposition at various oxygen partial pressures. We discuss how the microstructure, surface roughness, oxidation condition, and resistive switching properties of ZnFe₂O₄ thin films are influenced by the oxygen partial pressure prevalent in the chamber during the deposition process. The films were deposited at oxygen partial pressure (pO₂) of 0.0013, 0.013, 0.13 and 1.3 mbar. The ZnFe₂O₄ thin film deposited at the lowest pO₂ (0.0013 mbar) did not display a resistive switching characteristic. The ZnFe₂O₄ device deposited at 0.13 mbar yielded the best results. These devices have a low SET variance and a large memory window (more than 2 orders of magnitude) due to an optimum amount of oxygen vacancies/ions contained in the ZnFe₂O₄ film, which is helpful for better resistive switching, than devices deposited at other oxygen pressures. We also find that the migration of oxygen vacancies is linked to the resistive switching process.     

Unipolar resistive switching behavior of amorphous SrMoO4 thin films deposited at room temperature

Amorphous SrMoO₄ (SMO) thin films were deposited on Pt/Ti/SiO₂/Si substrates at room temperature by pulsed laser deposition and the resistive switching (RS) behavior of the Au/SMO/Pt devices was investigated. The Au/SMO/Pt devices exhibit typical unipolar RS behavior with excellent switching parameters as follows: high resistance ratio (~10⁵) between the low resistance state (LRS) and high resistance state (HRS), non-overlapping switching voltages, and good endurance and retention characteristics. Detailed analysis of their current-voltage characteristics reveals that the conduction mechanisms are Ohmic conduction in the LRS and lower voltage region of HRS, and Poole-Frenkel emission in the higher voltage region of the HRS. Temperature dependent resistance measurements, combined with x-ray photoelectron spectroscopy and model analysis indicate that the unipolar RS behavior of the Au/SMO/Pt devices could be understood by a conical conducting filaments (CFs) model in which the conical CFs are composed of oxygen vacancies. The conical CFs extend from the cathode to anode during the forming process and the observed RS behavior occurs in the localized region near the anode. These results suggest that the room-temperature- deposited amorphous SMO thin films could find potential application in nonvolatile RS memory.     

Dielectric relaxation and resistive switching of Bi0.96Sr0.04Fe0.98Co0.02O3/CoFe2O4 thin films with different thicknesses of the Bi0.96Sr0.04Fe0.98Co0.02O3 layer

Bi_0.96Sr_0.04Fe_0.98Co_0.02O₃/CoFe₂O₄(BSFCO/CFO) bilayered thin films with different thicknesses of the BSFCO layer are synthesized on FTO/glass substrates by chemical solution deposition method (CSD). The influence of BSFCO thickness on the microstructure, dielectric relaxation, ferroelectric properties and resistive switching (RS) of the thin films are researched. Strain exists in the prepared thin films and gives rise to structural distortion, which has an effect on charged defects and ferroelectric polarization. Dielectric relaxation that is closely related to the interfacial polarization at the BSFCO/CFO interface is observed, and the dielectric loss peaks along with decreasing intensity shift to high frequency with decreasing strain. The Maxwell-Wagner two-layer model is adopted to investigate the mechanism of dielectric relaxation, and the relaxation time τ is calculated and it shown to be directly proportional to the strain. It is found that the dielectric properties, including low dielectric loss, can be improved by controlling the BSFCO layer thickness. The ferroelectric properties improve with the decreasing strain, the 12-BSFCO/CFO thin film possesses a large P_r ~ 102.9?μC/cm² at 660?kV/cm. The observed resistive switching (RS) behavior is attributed to the interfacial conduction mechanism, it is found that strain-dependent the ferroelectric polarization switching modulates the width of depletion layer and the height of potential barrier at the interface, resulting in the different resistance states.     

Carrier transport mechanism and bipolar resistive switching behavior of a nano-scale thin film TiO2 memristor

A titanium dioxide (TiO₂) based memristor device having an active layer thickness of 10?nm was fabricated using radio frequency (RF) reactive sputtering and its resistive switching characteristics and carrier transport mechanisms were investigated. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to confirm the structural properties of the device. Measurement of the time-dependent current-voltage (I-V-t) was used to characterize resistive switching and memristive behavior. The characteristic pinched hysteresis I-V loops of the memristor were apparent. Bipolar and homogeneous resistive switching characteristics and a forming voltage of 2?V were detected in the device. The retention time exceeded 10³ s and the endurance test was reasonably acceptable. In addition, the carrier transport mechanism of the device was revealed. The linear region of the low electric field demonstrated ohmic behavior, whereas the non-linear high electric field region was dominated by a Schottky emission carrier transport mechanism. A Poole-Frenkel emission mechanism acted as a secondary conduction mechanism. It was proposed that the Poole-Frenkel and Schottky emission mechanisms were associated with oxygen vacancies in the TiO₂.     

Bi-stable resistive switching characteristics in Ti-doped ZnO thin films

Ti-doped ZnO (ZnO/Ti) thin films were grown on indium tin oxide substrates by a facile electrodeposition route. The morphology, crystal structure and resistive switching properties were examined, respectively. The morphology reveals that grains are composed of small crystals. The (002) preferential growth along c-axis of ZnO/Ti could be observed from structural analysis. The XPS study shows the presence of oxygen vacancies in the prepared films. Typical bipolar and reversible resistance switching effects were observed. High R_OFF/R_ON ratios (approximately 14) and low operation voltages within 100 switching cycles are obtained. The filament theory and the interface effect are suggested to be responsible for the resistive switching phenomenon.     

Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Nitride film played an essential role as an excellent diffusion barrier in the semiconductor field for several decades. In addition, interest in next-generation memories induced researchers’ attention to nitride film as a new storage medium. A Pt/AlN/TaN device was investigated for resistive random-access memory (RRAM) application in this work. Resistive switching properties were examined in the AlN thin film formed by atomic layer deposition (ALD). The unique switching feature conducted under the positive voltage was investigated, while the typical bipolar switching was conducted under the application of negative voltage. Good retention and DC, and pulse endurances were achieved in both conditions and compared to the memory performances. Finally, the electronic behaviors based on the unique switching feature were analyzed through X-ray photoelectron spectroscopy (XPS) and the current–voltage (I–V) linear fitting model.     

Multilevel operation of GdOx-based resistive switching memory device fabricated by post-deposition annealing

Resistive switching memory has been studied actively for next-generation computing. Several binary oxides, such as HfO₂ and Ta₂O₅, are widely adapted as resistive switching layers; however, there are several limitations to obtaining an energy- and area-efficient operation with sufficient reliability. Rare-earth oxide materials exhibit interesting resistive switching properties because of their reactivities with active anion species. In this study, atomic-layer-deposited GdO_x films were investigated as an active switching layer for resistive switching memory. Post-deposition annealing of as-grown GdO_x films enhanced the tunability of the resistance states, which can be useful for the multilevel operation of nonvolatile memory and neuromorphic computing applications. The effects of the crystallization and hygroscopic nature of the GdO_x film are investigated for elucidating the change in the resistive switching characteristics and its underlying mechanism.     

Remotely tuned multistate resistive switching in MoS2/NiMnIn thin film heterostructure for highly flexible ReRAM application

In this article, the Cu/MoS₂/NiMnIn memory structure was fabricated over stainless steel substrate for flexible electronics applications. The bipolar resistive switching characteristics were observed in two different fabricated devices (i) without sulfur vacancies (D₁) and (ii) with sulfur vacancies (D₂) in MoS₂ thin film. Three different resistance states such as the high resistance state (HRS), intermediate resistance state (IRS) and low resistance state (LRS) have been detected for the D₂ memory device. It could be ascribed to the two filamentary models based on the movement of sulfur vacancies and the formation of Cu metallic filament with applied bias voltage. Moreover, the Ohmic and modified space charge limited conduction mechanisms clearly explain the current conduction in different resistance states of device D₂. The fabricated MoS₂ thin film-based memory structure exhibits stable resistive switching behavior with a high OFF/ON ratio of ～3.6 × 10³, good consistency of ～3600 endurance cycles and excellent data retention capability up to 3000 s. Moreover, the remote tuning of device D₂ was thoroughly investigated and an appreciable change in SET voltage was detected with external temperature and magnetic field. Additionally, the external magnetic field altered the switching states and enhanced the multi-bit data storage capability of the memory device. This can be ascribed to the effect of the Lorentz force on ionic movement in the presence of the external magnetic field. The mechanical flexibility of the memory structure was tested for 1000 bending cycles at various bending angles in both the tensile and compressive bending modes. Hence, the present study opens up new ways for the futuristic flexible device for high data storage and neuromorphic computing applications.     

Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device

The resistance change of an insulator or semiconductor under applied current or voltage is defined as resistive switching effect, which is a significative physical performance in the exploit of new concept nonvolatile resistance random access memory (RRAM). In our work, the g-C₃N₄ powder was firstly fabricated by calcination method, and continuously a device with Ag/g-C₃N₄/FTO structure was prepared using drop-coated g-C₃N₄ powder to form a film onto FTO. It can be observed that the as-prepared cell exhibits an excellent resistive switching memory characteristic (HRS/LRS resistance ratio can be reached to ~?52) and good reliability under applied voltage window of 4.0?V. Finally, it is believed that the space charge limited conduction is appropriate to understanding such the memory behavior.     

Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio

We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O₂ pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O₂ pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.     

On origin of resistive and capacitive contributions to impedance of memory states in Cu/TiO2/Pt RRAM devices by impedance spectroscopy

The resistive switching phenomenon is attributed to local formation and rupture of conductive filaments (CF), however some aspects of the switching mechanism still need wider consensus. The origin of resistance contribution to low resistance state (LRS) and high resistance state (HRS) is although well known, the origin of capacitive contribution to the memory state of resistive random access memory device (RRAM) is ambiguous. Here we report impedance spectroscopic studies carried on Cu/TiO₂/Pt devices to address the origin of resistive and capacitive contribution, where the effect of DC bias voltage, reset stop voltage and set compliance current on the impedance of RRAM memory states were investigated in detail. The studies revealed that the capacitive contribution was dominated by the surrounding TiO₂ bulk and contrary to existing knowledge, gap formed owing to ruptured CF has negligible role. These studies also reaffirmed the origin of the resistive contribution to the HRS and LRS state, which was dictated by the ruptured gap and connected CF, respectively. Results of this study may be significant towards improving the switching time and operating frequency performance of futuristic memory, RF switch and neuromorphic computing applications of RRAM devices.     

The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template

A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe₂O₄ thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect.

PACS

68.37.-d; 73.40.Rw; 73.61.-r     

Low voltage resistive memory devices based on graphene oxide–iron oxide hybrid

Low cost resistive switching memory devices using graphene oxide–iron oxide (GF) hybrid thin films, sandwiched between platinum (Pt) and indium-tin-oxide (ITO) electrodes, were demonstrated. The fabricated devices with Pt/GF/ITO structure exhibited reliable and reproducible bipolar resistive switching performance, with an ON/OFF current ratio of 5 × 10³, excellent retention time longer than 10⁵ s, SET voltage of 0.9 V, and good endurance properties. In all aspects of the device characteristics, the GF based devices outperformed graphene oxide (GO) based devices. Ohmic conduction was found to be dominant current conduction mechanism in all switching regions except for the high voltage regime where space charge limited conduction and trap charge limited conduction were found to be the main current conduction mechanism. X-ray photoelectron spectroscopy and transmission electron microscopy/selected area diffraction analysis revealed γ-Fe₂O₃ and Fe₃O₄ iron oxide phases coexist in the hybrid films. While the desorption/adsorption of oxygen-related functional groups on the GO sheets is the dominant resistive switching mechanism in Pt/GO/ITO devices, the formation/rupture of multiple highly conducting Fe₃O₄ filaments at the iron oxide/GO interface additionally facilitate the switching in the present Pt/GF/ITO devices. Thereby, excellent electrical switching performance was achieved.     

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories

Enhanced resistive switching phenomena of IrO_x/GdO_x/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd₂O₃ films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron microscope. Via-hole memory device shows bipolar resistive switching phenomena with a large formation voltage of -6.4 V and high operation current of >1 mA, while the cross-point memory device shows also bipolar resistive switching with low-voltage format of +2 V and self-compliance operation current of <300 μA. Switching mechanism is based on the formation and rupture of conducting filament at the IrO_x/GdO_x interface, owing to oxygen ion migration. The oxygen-rich GdO_x layer formation at the IrO_x/GdO_x interface will also help control the resistive switching characteristics. This cross-point memory device has also Repeatable 100 DC switching cycles, narrow distribution of LRS/HRS, excellent pulse endurance of >10,000 in every cycle, and good data retention of >10⁴ s. This memory device has great potential for future nanoscale high-density non-volatile memory applications.     

Self-rectifying and forming-free resistive switching behaviors in Pt/La2Ti2O7/Pt structure

In this work, we report the resistive switching behavior of an amorphous La₂Ti₂O₇ (LTO) film as sandwiched between two Pt electrodes. The resistive switching is forming-free and highly uniform. Furthermore, it exhibits self-rectifying resistive switching behaviors owing to the Schottky contact and quasi-ohmic contact formed at the top and bottom interfaces, respectively. The mechanism of switching behavior in the device is attributed to the trapping/detrapping-mediated electronic bipolar resistance switching. By fitting the current-voltage characteristics, it indicates the coexistent conduction mechanisms of Schottky emission and space-charge-limited-conduction (SCLC), while the Schottky barrier modified by electron trapping/detrapping plays a dominating role in the resistive switching process.     

(001)-oriented BiFeO3 films integrated on Si with enhanced electrical performances

Highly (001)-oriented pure-phase BFO films were prepared on traditional Si substrates via radio frequency magnetron sputtering (RFMS). The crystallinity of the films is found to be increased, that is, higher degree of (001) texture, larger grain size, less grain boundary, denser surface morphology, and better thickness uniformity, with increased film thickness. These factors have significant influences on the electrical properties of BFO films, that is, dielectric response, as well as ferroelectric polarization and leakage current characteristics. The 240-nm-thick film exhibits relatively poor electrical properties compared with other three thicker films, which is mainly due to its small grain, the enhancement of the clamping effect of neighboring grains, and the absence of domain walls. The essential roles of the evolution and distribution of grains/domains and defect charges in leakage mechanism and ferroelectric switching polarization were also investigated systematically. It was found that 600-nm-thick BFO film has the lowest leakage current density (as low as 1.8 × 10⁻⁶ A / cm² @ 90 kV/cm) and followed a mixed SE or SCLC conduction behavior, while the leakage behavior in other films is dominated by SE and P-F currents. All (001)-BFO films have a giant electrical polarization which is solely originated from the contribution of ferroelectric domain switching, and it has lower switching voltage and faster switching rate in thicker films.     

Preparation of AlN and LiNbO3 thin films on diamond substrates by sputtering method

Diamond is attracting interest as a high velocity material because its elastic constant is the highest of all substances and the surface acoustic wave (SAW) velocity is more than 10 000 m/s. Although diamond is not piezoelectric, its high acoustic propagation makes it a desirable substrate for SAW devices when coupled with piezoelectric thin films such as aluminum nitride (AlN) and lithium niobate (LiNbO₃). Highly oriented AlN thin films and LiNbO₃ thin films were prepared by a reactive sputtering method on polycrystalline diamond substrates. The average surface roughness (Ra) of the AlN thin films was below 2 nm by locating the diamond substrates at the position of 100 mm from the aluminum target. The full width at half maximum of the rocking curve for the AlN(002) peak of X-ray diffraction was approximately 0.2°. SAW characteristics with an interdigital transducer (IDT)/AlN/diamond structure were investigated. The average surface roughness of LiNbO₃ thin films was 5 nm. If the highly oriented LiNbO₃ films are deposited on a diamond substrate, the IDT/LiNbO₃/diamond layered structure will be capable of wide-bandwidth application in SAW devices at high frequencies.     

Fabrication of tridoped p-ZnO thin film and homojunction by RF magnetron sputtering

Tridoping (Al–As–N) into ZnO has been proposed to realize low resistive and stable p-ZnO thin film for the fabrication of ZnO homojunction by RF magnetron sputtering. The tridoped films have been grown by sputtering the AlN mixed ZnO ceramic targets (0, 0.5, 1 and 2 mol%) on GaAs substrate at 450 °C. Here, Al and N from the target, and As from the GaAs substrate (back diffusion) takes part into tridoping. The grown films have been characterized by Hall measurement, X-ray diffraction, photoluminescence, time-of-flight secondary ion mass spectroscopy and X-ray photoelectron spectroscopy. It has been found that all the films showed p-conductivity except for 2 mol% AlN doped film. The obtained resistivity (8.6×10⁻² Ω cm) and hole concentration (4.7×10²⁰ cm⁻³) for the best tridoped film (1 mol% AlN) is much better than that of monodoped and codoped ZnO films. It has been predicted that [(As_Zn−2V_Zn)+N_O] acceptor complex is responsible for the p-conduction. The homojunction fabricated using the best tridoped ZnO film showed typical rectifying characteristics of a diode. The junction parameters have been determined for the fabricated homojunction by Norde's and Cheung's method.