Enhanced multiferroic properties in Pr-doped BiFe0.97Mn0.03O3 films

Bi_1−xPr_xFe_0.97Mn_0.03O₃ (x=0.00, 0.05, 0.10, 0.15, 0.20) thin films were deposited on FTO/glass substrate using chemical solution deposition. The influences of Pr doping on the crystalline structure and multiferroic properties were investigated. In the X-ray diffraction and Raman spectra results, the crystal structures of Bi_1−xPr_xFe_0.97Mn_0.03O₃ films revealed a gradual transformation from the trigonal structure to the tetragonal structure. The leakage current densities of Bi_1−xPr_xFe_0.97Mn_0.03O₃ films are one order of magnitude lower than that of BiFeO₃. Compared with unsaturated polarization-electric field hysteresis loop of BiFeO₃ film, the Pr and Mn co-doped BFO films have significantly improved ferroelectric properties. The improved remnant polarization (Pr=91.3 µC/cm²) and the positive switching current (I=0.028 A) have been observed in Bi_0.85Pr_0.15Fe_0.97Mn_0.03O₃ film. The improved electrical properties are attributed to the structure transformation, increasing grain boundaries, low oxygen vacancies ratio and increasing Fe³⁺ concentration. In addition, the saturation magnetization of Bi_0.85Pr_0.15Fe_0.97Mn_0.03O₃ film is 1.81 emu/cm³, which is approximately three times higher than pure BiFeO₃ (M_s=0.67 emu/cm³).     

Effect of La and Ni substitution on structure,dielectric and ferroelectric properties of BiFeO3 ceramics

In this communication, we present the results on Bi_1−xLa_xFe_1−yNi_yO₃ (x=0.0, 0.1; y=0.0, 0.05) samples processed by solid-state reaction route in order to study crystalline and electronic structure, dielectric and ferroelectric properties. The best refinement was achieved by choosing rhombohedral structure (R3c) for BiFeO₃ and Bi_0.9La_0.1FeO₃ samples. Whereas, the XRD pattern of BiFe_0.95Ni_0.05O₃ and Bi_0.9La_0.1Fe_0.95Ni_0.05O₃ samples were refined by choosing rhombohedral (R3c) and cubic (I23) structure. Raman scattering measurement infers nine Raman active phonon modes for all the as prepared samples. The substitution of Ni ion at Fe-site in BiFeO₃ essentially changes the modes position i.e. all the modes are observed to shift to lower wave number. Dielectric constant (ε′) and dielectric loss (tan δ) as a function of frequency have been investigated and they decreases with increasing frequency of the applied alternating field and become constant at high frequencies. This feature is a characteristic of Maxwell Wagner type of interfacial polarization. The remnant polarization (P_r) for Bi_0.9La_0.1FeO_3, BiFe_0.95Ni_0.05O₃, and Bi_0.9La_0.1Fe_0.95Ni_0.05O₃ are 0.08, 0.11, 0.69 μC/cm², respectively and the value of coercive field for Bi_0.9La_0.1FeO_3, BiFe_0.95Ni_0.05O₃, and Bi_0.9La_0.1Fe_0.95Ni_0.05O₃ are 0.53, 0.67, 0.68 kV/cm, respectively. X-ray absorption spectroscopy (XAS) experiments at Fe L₂,₃ and O K-edges are performed to investigate the electronic structure of well-characterized Bi_1−xLa_xFe_1−yNi_yO₃ (x=0.0, 0.1; y=0.0, 0.05) samples. The presence of reasonable ferroelectric polarization at room temperature in Bi_0.9La_0.1Fe_0.95Ni_0.05O₃ ceramics makes it suitable for technological applications.     

Room temperature multiferroicity in Aurivillius compounds Bi6Fe2−xNixTi3O18 (0≤x≤1)

We investigate the structural, magnetic, ferroelectric, and dielectric properties of Bi₆Fe_2−xNi_xTi₃O₁₈ (0≤x≤1). The coexistence of ferroelectricity and ferromagnetism were observed at room temperature for the Ni-doped samples. The ferromagnetism in Bi₆Fe_2−xNi_xTi₃O₁₈ can be understood in terms of spin canting of the antiferromagnetic coupling of the Fe-based and Ni-based sublattices via Dzyaloshinsky-Moriya interaction. Moreover, the substitution of Ni for Fe was effective for the enhancement of ferroelectric properties. The x=0.6 sample exhibits a maximum remnant polarization P_r of 37.8 μC/cm² because of a lower leakage current. The rather large activation energy in the x=0 and 0.2 samples implies that the relaxation process may be not associated with the thermal motion of oxygen vacancies inside the bulk.     

Electrical properties of chemical solution deposited (Bi0.9RE0.1)(Fe0.975Cu0.025)O3−δ (RE=Ho and Tb) thin films

Pure BiFeO₃ (BFO) and (Bi_0.9RE_0.1)(Fe_0.975Cu_0.025)O_3?δ (RE=Ho and Tb, denoted by BHFCu and BTFCu) thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. The BHFCu and BTFCu thin films showed improved electrical and ferroelectric properties compared to pure BFO thin film. Among them, the BTFCu thin film exhibited large remnant polarization (2P_r), low coercive field (2E_c) and reduced leakage current density, which are 89.15 C/cm² and 345 kV/cm at 1000 kV/cm and 5.38×10^?5 A/cm² at 100 kV/cm, respectively.     

Structural transformation and multiferroic properties of Sm and Ti co-doped BiFeO3 ceramics with Fe vacancies

Sm and Ti co-doped BiFeO₃ (BFO) ceramics with Fe vacancies—Bi_0.86Sm_0.14FeO₃, Bi_0.86Sm_0.14Fe_0.99Ti_0.01O₃, and Bi_0.86Sm_0.14Fe_0.9Ti_0.05O₃—were prepared by a solid-state method using a rapid liquid process. X-ray diffraction indicated that all samples exhibited a rhombohedral structure with a minor secondary phase. The structural transformation from a rhombohedral (space group: R3c) to orthorhombic structure (space group: Pnma) was observed in the sample of Bi_0.86Sm_0.14Fe_0.9Ti_0.05O₃, which was also confirmed by Raman scattering spectra. Microstructural investigations with scanning electron microscopy showed a reduction in grain size with doping of BFO. The dielectric loss of Bi_0.86Sm_0.14Fe_0.9Ti_0.05O₃ reaches 0.05 (at 100 Hz) owing to the introduction of Ti and Fe vacancies. Ferroelectromagnetic measurements revealed the existence of ferroelectricity with a remanent polarization of 0.24 µC/cm² in Bi_0.86Sm_0.14FeO₃, paraelectricity in Bi_0.86Sm_0.14Fe_0.9Ti_0.05O₃, and weak ferromagnetism with a remanent magnetization of 0.2 emu/g in Bi_0.86Sm_0.14Fe_0.99Ti_0.01O₃. The two composition-driven phases exist simultaneously and the different coercive field might be related to the jumps in the ferromagnetic hysteresis loops. Both the ferroelectric and magnetic properties were shown to correlate with the composition-driven structural evolution.     

Structural and electrical properties of Na0.5Bi4.0RE0.5Ti4O15 (RE=Tm,Yb and Lu) thin films

In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na_0.5Bi_4.5Ti₄O₁₅ (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na_0.5Bi_4.5Ti₄O₁₅ and the rare earth metal ion-doped Na_0.5Bi_4.0RE_0.5i₄O₁₅ (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na_0.5Bi_4.0RE_0.5Ti₄O₁₅ thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96×10⁻⁷ A/cm² at an applied electric field of 100 kV/cm and a large remnant polarization (2P_r) of 26.7 μC/cm² at an applied electric field of 475 kV/cm.     

Effect of Cr doping on ferroelectric and magnetic properties of Bi0.8Ba0.2FeO3

Multiferroic ceramics Bi_0.8Ba_0.2Fe_1−xCr_xO₃ (x=0, 0.05 and 0.1) were synthesized by using the conventional solid state reaction method. The pure phase with rhombohedral structure was confirmed by the X-ray diffraction measurements for all samples. It was shown that the magnetic and the ferroelectric properties were simultaneously improved, and the maximum values of the remnant magnetization (2Mr) and the remnant polarization (2Pr) at room temperature for all samples are around 1 emu/g and 1.9 μC/cm², respectively. Furthermore, the leakage current density, the low frequency dispersion in the dielectric constant and the dielectric loss decreased with increasing the Cr concentration from x=0 to 0.1. A remarkable change in the P–E loop was observed whether a bias dc magnetic field was applied or not, approving the existence of the magnetoelectric coupling indirectly therein.     

Enhancement of electrical properties of (Gd,V) co-doped BiFeO3 thin films prepared by chemical solution deposition

Pure BiFeO₃ (BFO) and (Bi_0.9Gd_0.1)(Fe_0.975V_0.025)O_3+δ(BGFVO) thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. The improved electrical properties were observed in the BGFVO thin film. The leakage current density of the co-doped BGFVO thin film showed two orders lower than that of the pure BFO, 8.1×10^?5 A/cm² at 100 kV/cm. The remnant polarization (2P_r) and the coercive electric field (2E_c) of the BGFVO thin film were 54 μC/cm² and 1148 kV/cm with applied electric field of 1100 kV/cm at a frequency of 1 kHz, respectively. The 2P_r values of the BGFVO thin film show the dependence of measurement frequency, and it has been fairly saturated at about 30 kHz.     

Enhancement of multiferroic properties of Aurivillius Bi5Ti3FeO15 ceramics by Co doping

Multiferroic Bi₅Ti₃Fe_1−xCo_xO₁₅ (BFCT-x, where x = 0, 0.1, 0.3, 0.5, 0.7) ceramics were synthesized via a conventional solid-state reaction process and their microstructural, ferroelectric, magnetic and magnetoelectric coupling properties were investigated in detail. All samples show layered perovskite Aurivillius phase with an orthorhombic structure. The highest remanent polarization (2P_r) (35 μC/cm²) has been observed in BFCT-0 ceramic while the BFCT-0.3 ceramic shows the highest remanent magnetization (M_r) (0.13 emu/g) and magnetoelectric coefficient (11.47 mV cm⁻¹ Oe⁻¹). The enhancement of magnetic properties and the magnetoelectric coupling of these ceramics are attributed to the structural distortion caused by Co substitution which subsequently led to ferromagnetic interactions via the Dzyaloshinskii-Moriya interaction.     

Enhanced electric and magnetic properties of (BiLi)1/2(Fe2/3W1/3)O3 multiferroic as compared to BiFeO3

Very low electric and magnetic moments are the two major disadvantages which restrict the practical applications of BiFeO₃. We have doped Li⁺ and W⁶⁺ in Bi³⁺ and Fe³⁺ site respectively to overcome the limitations of BiFeO₃. Pure BiFeO₃ and (BiLi)_1/2(Fe_2/3W_1/3)O₃ (BLFWO) are synthesized by a solid-state reaction technique. The samples are characterized by X-ray diffractometer, LCR meter, P–E loop tracer, vibrating sample magnetometer and dc resistivity setup to understand their different properties. Dielectric and impedance studies of the samples are measured at different frequency (10²–10⁶ Hz) in a wide temperature range (30–375 °C). Due to co-doping in pure BFO the remnant polarization and remnant magnetization are enhanced and thus BLFWO may show large industrial utility.     

Electrical properties and light up conversion effects in Bi3.79Er0.03Yb0.18Ti3−xWxO12 ferroelectric ceramics

Modified ceramic compositions of Bi_3.79Er_0.03Yb_0.18Ti_3−xW_xO₁₂ with fixed Er and Yb content, and a varying W content (x=0.0, 0.01, 0.03, 0.06 and 0.10) are prepared. The site selectivity of Er³⁺, Yb³⁺, and W⁶⁺ cations is analyzed, and their influence on the electrical and light up conversion properties is studied. Formation of single phase orthorhombic structure is confirmed with enhanced grain growth up to x=0.03, and for (x≥0.04–0.10) the grain growth is inhibited, and the orthorhombic distortion is relaxed. Raman spectroscopy reveals W⁶⁺ cation substitutes preferentially at the B-site replacing Ti⁴⁺ ions in the Bi₄Ti₃O₁₂ lattice structure. Increasing W⁶⁺ donor concentration reduces the conductivity effects by lowering the oxygen vacancies. Reduced dielectric losses (tan δ=0.003) and dispersion with frequency in the range (10⁻²–10 Hz) are observed, and improvements in the remnant polarization (2P_r=28.86 μC/cm²) are seen up to an optimum content of x=0.03. At higher W content (x>0.03), the properties tend to degrade due to structural relaxation and microstructural changes. Up conversion photoluminescence (UC-PL) under 980 nm excitation shows strong emission in the green and red bands due to enhanced crystal field around the Er³⁺ ions for an optimum W content of x=0.06. A weak blue emission band around (~492 nm) is observed by cooperative emission (CE) due to radiative relaxation of an excited Yb–Yb pair from a virtual level. Variation of UC emission intensity with pump-power confirms a two-photon mechanism for the up conversion process.     

Influence of seed layer on crystal orientation and electrical properties of (Na0.85K0.15)0.5Bi0.5TiO3 thin films prepared by a sol–gel process

Sol–gel derived lead-free (Na_0.85K_0.15)_0.5Bi_0.5TiO₃ (NKBT) thin films, with and without a Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ (PLCT) seed layer, were fabricated on (111)Pt/Ti/SiO₂/Si substrates. The influences of the seed layer on crystal orientation and electrical properties were investigated in detail. XRD indicated that the NKBT thin films fabricated with a seed layer were fully crystallized into a single perovskite structure, while the films fabricated under the same conditions, but without a seed layer, possessed a certain amount of pyrochlore phase. The NKBT film with a 14 nm-thick seed layer showed high (100) orientation, and exhibited enhanced electrical properties, such as a higher remanent polarization (Pr～18 µC/cm²), a lower dielectric loss tangent (tan δ ～0.023) and smaller transient current density (J<10^?5 A/cm²).     

Effects of Ho and Ti Doping on Structural and Electrical Properties of BiFeO3 Thin Films

Effects of Ho and Ti ions individual doping and co‐doping on the structural, electrical, and ferroelectric properties of the BiFeO₃ thin films are reported. Pure BiFeO₃, (Bi_0.9Ho_0.1)FeO₃, Bi(Fe_0.98Ti_0.02)O_3+δ, and (Bi_0.9Ho_0.1)(Fe_0.98Ti_0.02)O_3+δ thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. All thin films were crystallized in distorted rhombohedral structure containing no secondary or impurity phases confirmed by using an X‐ray diffraction study. Changes in microstructural features, such as grain morphology and grain size distribution, for the doped samples were analyzed by a scanning electron microscopy. From the experimental results, a low electrical leakage (1.2 × 10^?5 A/cm² at 100 kV) and improved ferroelectric properties, such as a large remnant polarization (2P_r) of 52 μC/cm² and a low coercive field (2E_c) of 886 kV/cm, were observed for the (Bi_0.9Ho_0.1)(Fe_0.98Ti_0.02)O_3+δ thin film. Fast current relaxation and stabilization observed in the (Bi_0.9Ho_0.1)(Fe_0.98Ti_0.02)O_3+δ imply effective reduction and neutralization of charged free carriers.     

Effect of oxygen vacancies on the microstructure and multiferroic behavior of Bi4.25La0.75Fe0.5Co0.5Ti3O15 ceramics

In order to reveal the solid relationship between oxygen vacancies and multiferroic properties, polycrystalline Bi_4.25La_0.75Fe_0.5Co_0.5Ti₃O₁₅ (BLFCT) ceramics were sintered in argon (BLFCT-Ar), air (BLFCT-air) and oxygen (BLFCT-O₂) by conventional solid state reaction, respectively. Their microstructures, ferroelectric, magnetic properties and valence states of magnetic ions were investigated and compared. X-ray diffraction patterns confirmed a single phase crystal structure in all samples. The lattice constants were calculated and the minor variation of the lattice constants is attributed to the different oxygen vacancy concentration. Furthermore, different oxygen vacancy concentration may be responsible for the different values of RT-recorded remanant magnetization (2M_r), remanent polarization (2P_r) as well as magnetic phase transition temperatures (T_CM). The magnetic response of sample sintered in argon (2M_r =0.52 emu/g, T_CM=392 K) is significantly superior to that of the others, while the sample sintered in oxygen exhibits a better remnant polarization (2P_r =11.6 µC/cm²) at an applied electric field of 160 kV/cm. The BLFCT-Ar sample was then annealed in oxygen to further justified the dependence of 2P_r and 2M_r on oxygen vacancies. Finally, outcome of the XPS measurement manifested the ratios of Fe²⁺/Fe³⁺ and Co²⁺/Co³⁺, and reconfirmed the different oxygen vacancy concentration in three samples.     

Mixed grains and orientation-dependent piezoelectricity of polycrystalline Nd-substituted Bi4Ti3O12 thin films

Polycrystalline Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) thin films were prepared on Pt/Ta/glass substrates by a pulsed laser deposition method. X-ray diffraction measurements revealed that the BNT thin films were preferentially oriented along the (117) direction although they possessed a polycrystalline structure. Good ferroelectric properties of the BNT thin film were observed with a remnant polarization of 13 μC/cm² (2 P_r ~26 μC/cm²). The fatigue resistance test exhibited that the ferroelectric polarization of the BNT thin film degraded significantly after around 10⁹ switching cycles, which can be attributed to its crystal structure. We investigated the surface morphology and ferroelectric domain structure by atomic force microscopy (AFM) and piezoresponse force microscopy (PFM), respectively. Interestingly, mixed grains consisting of long and circular shapes were observed on the BNT film surface, which corresponded to a- and c-axes orientations of crystal growth, respectively. The PFM study revealed that the piezoelectric coefficient (d₃₃) of the long grains was much larger than that of the circular grains.     

Effect of Zr substitution on structural,magnetic, and optical properties of Bi0.9Dy0.1Fe1−xZrxO3 multiferroic ceramics prepared by rapid liquid phase sintering method

Zr substituted Bi_0.9Dy_0.1Fe_1−xZr_xO₃ (x=0.03, 0.06 and 0.10) multiferroic ceramics were synthesized by rapid liquid phase sintering technique to improve its multiferroic properties. Rietveld structural refinement of XRD patterns and Raman spectra revealed a partial structural phase transition from rhombohedral (R3c) to biphasic structure (R3c+P4mm) on codoping. The substitution of larger ionic radii and higher valence Zr⁴⁺ ions at Fe-site leads to decrease in the grain size as a result of charge compensation at Fe site. The weak ferromagnetic behavior were observed in all samples along with maximum M_r value of 0.159 emu/g for x=0.03 concentration, which is also endorsed by second order Raman modes. The distortion in FeO₆ octahedra due to Zr substitution leads to splitting of electronic bands of 3.2 eV into multiplets, which in turn reduced the optical band gap value in the range of 2.06–2.10 eV for all samples.     

A comparative study of the magnetic and microwave properties of Al3+ and In3+ substituted Mg–Mn ferrites

The effect of substitution of diamagnetic Al³⁺ and In³⁺ ions for partial Fe³⁺ ions in a spinel lattice on the magnetic and microwave properties of magnesium–manganese (Mg–Mn) ferrites has been studied. Three kinds of Mg–Mn based ferrites with compositions of Mg_0.9Mn_0.1Fe₂O₄, Mg_0.9Mn_0.1Al_0.1Fe_1.9O₄, and Mg_0.9Mn_0.1In_0.1Fe_1.9O₄ were prepared by the solid-state reaction route. Each mixture of high-purity starting materials (oxide powders) in stoichiometric amounts was calcined at 1100 °C for 4 h, and the debinded green compacts were sintered at 1350 °C for 4 h. XRD examination confirmed that the sintered ferrite samples had a single-phase cubic spinel structure. The incorporation of Al³⁺ or In³⁺ ions in place of Fe³⁺ ions in Mg–Mn ferrites increased the average particle size, decreased the Curie temperature, and resulted in a broader resonance linewidth as compared to un-substituted Mg–Mn ferrites in the X-band. In this study, the In³⁺ substituted Mg–Mn ferrites exhibited the highest saturation magnetization of 35.7 emu/g, the lowest coercivity of 4.1 Oe, and the highest Q×f value of 1050 GHz at a frequency of 6.5 GHz.     

Structural,magnetic, vibrational and impedance properties of Pr and Ti codoped BiFeO3 multiferroic ceramics

Single-phase (Bi_1−xPr_x)(Fe_1−xTi_x)O₃ ceramics (x=0.03, 0.06, and 0.10 as BPFT-3, BPFT-6 and BPFT-10, respectively) were synthesized by conventional solid state reaction method. The effect of varying Pr and Ti codoping concentration on the structural, magnetic, dielectric and optical properties of the BPFT ceramics have been investigated. X-ray diffraction indicated pure rhombohedral phase formation for BPFT-3 and BPFT-6 ceramics, however, a structural phase transition from a rhombohedral to an orthorhombic phase has been observed for BPFT-10 ceramic. The maximum remnant magnetization of 0.1824 emu/g has been observed in BPFT-6. With increasing codoping concentration the room temperature dielectric measurements showed enhancement in dielectric properties with reduced dielectric loss. UV–vis diffuse reflectance spectra demonstrated the strong absorption of light in the visible region for a band gap variation 2.31–2.34 eV. Infrared spectroscopy indicated the shifting of Bi/Pr–O and Fe/Ti–O bonds vibrations and change in Fe/Ti–O bond lengths. Decrease in the conductivity on increasing Pr and Ti concentration in BFO is attributed to an enhancement in the barrier properties leading to suppression of lattice conduction path arising due to lattice distortion as confirmed from impedance analysis.     

Effects of Bi2O3–Li2CO3 additions on dielectric and pyroelectric properties of Mn doped Pb(Zr0.9Ti0.1)O3 thick films

Pb(Zr_0.9Ti_0.1)O₃ pyroelectric thick films adding various amounts of the sintering aids Bi₂O₃–Li₂CO₃ have been deposited on the substrates Al₂O₃ by the screen-printing process, and the dependence of microstructure, dielectric and pyroelectric properties on the content of sintering aids has been studied. When the amount of Bi₂O₃–Li₂CO₃ increases from 0 wt% to 5.4 wt%, the sintering temperature of the thick films decreases from 1100 °C to 900 °C, and the grain size and the lattice constant decrease either, but the density and the dielectric constant increase. The Pb(Zr_0.9Ti_0.1)O₃ thick film with 5.4 wt% of Bi₂O₃–Li₂CO₃ sintered at 900 °C has the maximum pyroelectric coefficient 10.51×10^?8 C/cm^?2 K^?1 and the highest figure-of-merit 10.58×10^?5 Pa^?0.5.     

Lead-free BaTiO3-Bi0.5Na0.5TiO3-Na0.73Bi0.09NbO3 relaxor ferroelectric ceramics for high energy storage

A series of (1-x)(0.65BaTiO₃-0.35Bi_0.5Na_0.5TiO₃)-xNa_0.73Bi_0.09NbO₃ ((1-x)BBNT-xNBN) (x = 0–0.14) ceramics were designed and fabricated using the conventional solid-state sintering method. The microstructure, dielectric property, relaxor behavior and energy storage property were systematically investigated. X-ray diffraction results reveal a pure perovskite structure and dielectric measurements exhibit a relaxor behavior for the (1-x)BBNT-xNBN ceramics. The slim polarization electric field (P-E) loops were observed in the samples with x ≥ 0.02 and the addition of Na_0.73Bi_0.09NbO₃ (NBN) could decrease the remnant polarization (P_r) of the (1-x)BBNT-xNBN ceramics obviously. The sample with x = 0.08 exhibits the highest energy storage density of 1.70 J/cm³ and the energy storage efficiency of 82% at 172 kV/cm owing to its submicron grain size and high relative density. These results show that the (1-x)BBNT-xNBN ceramics may be promising lead-free materials for high energy storage density capacitors.