Piezoelectric and ferroelectric properties of lead-free [Bi1−y(Na1−x−yLix)]0.5BayTiO3 ceramics

Lead-free [Bi_1−y(Na_1−x−yLi_x)]_0.5Ba_yTiO₃ (BNLB-x/y) piezoelectric ceramics were prepared by sintering the constituent oxides, and their piezoelectric and ferroelectric properties studied. The results of X-ray diffraction (XRD) suggest that Li⁺ and Ba²⁺ diffuse into the Bi_0.5Na_0.5TiO₃ (BNT) lattices to form a solid solution with a single-phase perovskite structure. The ceramics can be well sintered at 1100–1150 °C. The introduction of Li⁺ and Ba²⁺ into Bi_0.5Na_0.5TiO₃ significantly decreases the coercive field, E_c but maintains the large remanent polarization, P_r of the materials. The ceramics exhibit relatively good piezoelectric properties and very strong ferroelectricity: piezoelectric constant, d₃₃ = 208 pC/N, planar electromechanical coupling factor, k_p = 37.0%, remanent polarization, P_r = 38.5 μC/cm², coercive field, E_c = 3.27 kV/mm. The depolarization temperature, T_d of BNLB-0.075/0.04 ceramics is about 190 °C.     

Dielectric and ferroelectric properties of (1 − x)BaTiO3–xBi0.5Na0.5TiO3 ceramics

Lead-free (1 − x)BaTiO₃–xBi_0.5Na_0.5TiO₃ (x = 0.01, 0.02, 0.05, 0.1, 0.2, 0.3) ferroelectric ceramics were fabricated by the conventional ceramic technique. Sintering was made at 1200 °C for 2–4 h in air atmosphere. The crystal structure was investigated by X-ray diffraction. The dielectric and ferroelectric properties were also studied. Room temperature permittivity was found to decrease as Bi_0.5Na_0.5TiO₃ (BNT) content increases. Only the sample with 0.3 mol BNT was found to have relaxor behaviour. The T_c shifted slightly only for BNT addition lower than 0.1 mol. The highest T_c (about 150 °C) was obtained for 0.2 mol BNT addition. The remanent polarization, P_r, decreases whereas the coercive field, E_c, increases monotonously as the BNT content increases.     

Preparation and characterization of K0.5Bi0.5TiO3 particles synthesized by a stirring hydrothermal method

Nanoparticles of potassium bismuth titanate K_0.5Bi_0.5TiO₃ (KBT) with an average particle size of 38 nm were prepared using a stirring hydrothermal method. The pure KBT was obtained in 8 h reaction time instead of 24–48 h for conventional hydrothermal method. X-ray diffraction, Raman spectroscopy and TG analysis were used to check the proportion of hydroxyl group existing into the crude and the calcined KBT. A Hydroxyl group was found to affect the crystallite structure parameters and cell volume. When temperature increases from 25 to 1050 °C, the tetragonal structure presents a c/a ratio which decreases from 1.048 to 1.012. TG analysis and Raman vibration at high frequencies show that c/a is affected by hydroxyl group content below 750 °C and by potassium and bismuth vacancies above this temperature. The ceramic KBT showing a 300 nm size presents an improved ε_r=780 and a dielectric loss tan δ=0.062 at room temperature. Electric conductivity σ_ac was also lowered to 10⁻⁶ (Ω m)⁻¹ with an activation energy change at 673 K from 0.35 to 0.605 eV.     

Microstructure,ferroelectric and piezoelectric properties of Bi0.5K0.5TiO3-modified BiFeO3–BaTiO3 lead-free ceramics with high Curie temperature

The effects of composition, sintering temperature and dwell time on the microstructure and electrical properties of (0.75 ? x)BiFeO₃–0.25BaTiO₃–xBi_0.5K_0.5TiO₃ + 1 mol% MnO₂ ceramics were studied. The ceramics sintered at 1000 °C for 2 h possess a pure perovskite structure and a morphotropic phase boundary of rhombohedral and pseudocubic phases is formed at x = 0.025. The addition of Bi_0.5K_0.5TiO₃ retards the grain growth and induces two dielectric anomalies at high temperatures (T₁ ～ 450–550 °C and T₂ ～ 700 °C, respectively). After the addition of 2.5 mol% Bi_0.5K_0.5TiO₃, the ferroelectric and piezoelectric properties of the ceramics are improved and very high Curie temperature of 708 °C is obtained. Sintering temperature has an important influence on the microstructure and electrical properties of the ceramics. Critical sintering temperature is 970 °C. For the ceramic with x = 0.025 sintered at/above 970 °C, large grains, good densification, high resistivity and enhanced electrical properties are obtained. The weak dependences of microstructure and electrical properties on dwell time are observed for the ceramic with x = 0.025.     

Phase transition behavior and electrical properties of (1 − x)Bi0.5Na0.5TiO3–x(Na0.53K0.44Li0.04)(Nb0.88Sb0.08Ta0.04)O3 lead-free ceramics

(1 ? x)Bi_0.5Na_0.5TiO₃–x(Na_0.53K_0.44Li_0.04)(Nb_0.88Sb_0.08Ta_0.04)O₃ (BNT–xNKLNST) with x = 0–0.10 lead-free piezoelectric ceramics were prepared by a solid state method, and the structure and electrical properties were investigated in this study. It is found that a morphotropic phase boundary (MPB) of rhombohedral (R) and tetragonal (T) phase exists in the range of 0.03 ≤ x ≤ 0.05 and the structure changes to paraelectric phase when x > 0.07. The samples with x = 0.05 exhibit improved electrical properties owing to the formation of MPB, which are as follows: piezoelectric constant d₃₃ = 120 pC/N, remnant polarization P_r = 39.4 μC/cm² and coercive field E_c = 3.6 kV/mm. These results indicate that the enhanced piezoelectric properties for BNT can be achieved by forming the coexistence of R and T phase.     

Structural,dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–Bi(Zn0.5Ti0.5)O3 thin films prepared by sol–gel method

Lead free (1−x)(0.8Bi_0.5Na_0.5Ti_0.5O₃–0.2Bi_0.5K_0.5TiO₃)–xBiZn_0.5Ti_0.5O₃ (x=0–0.06) (BNT–BKT–BZT) thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by a sol–gel processing technique. The effects of BZT content on the structural, dielectric, ferroelectric and piezoelectric properties of the BNT–BKT–BZT thin films were investigated systematically. The BNT–BKT–BZT thin films undergo a transition from ferroelectric to relaxor phase with increasing temperature. The phase transition temperature decreases with the increase of BZT content. The BNT–BKT–BZT thin film with x=0.04 exhibits the best ferroelectric properties (P_max=40 µC/cm² and P_r=10 µC/cm²), largest dielectric constant (ε=560) and piezoelectric constant (d₃₃=40 pm/V). This finding demonstrates that the BNT–BKT–BZT thin film has an excellent potential for demanding high piezoelectric properties in lead free films.     

Compositional range and electrical properties of the morphotropic phase boundary in the Na0.5Bi0.5TiO3–K0.5Bi0.5TiO3 system

We have investigated the Na_0.5Bi_0.5TiO₃–K_0.5Bi_0.5TiO₃ (NBT–KBT) system, with its complex perovskite structure, as a promising material for piezoelectric applications. The NBT–KBT samples were synthesized using a solid-state reaction method and characterized with XRD and SEM. Room-temperature XRD showed a gradual change in the crystal structure from tetragonal in the KBT to rhombohedral in the NBT, with the presence of an intermediate morphotropic region in the samples with a compositional fraction x between 0.17 and 0.25. The fitted perovskite lattice parameters confirmed an increase in the size of the crystal lattice from NBT towards KBT, which coincides with an increase in the ionic radii. Electrical measurements on the samples showed that the maximum values of the dielectric constant, the remanent polarization and the piezoelectric coefficient are reached at the morphotropic phase boundary (MPB) (? = 1140 at 1 MHz; P_r = 40 μC/cm²; d₃₃ = 134 pC/N).     

High recoverable energy storage density and large piezoelectric response in (Bi0.5Na0.5)TiO3-PbTiO3 thin films prepared by a sol-gel method

Low-lead-content (1-x)(Bi_0.5Na_0.5)TiO₃-xPbTiO₃ (x = 0, 0.05, 0.10, 0.15, 0.25) (hereafter abbreviated as BNT-xPT) thin films were prepared by a sol-gel method, and their crystal structure, dielectric properties, recoverable energy-storage density and piezoelectric response were investigated as a function of PT concentration. Combining the XRD patterns and Raman spectroscopy indicate the phase structures go through rhombohedral (R) – rhombohedral + tetragonal (R + T) – tetragonal (T) evolution with increasing of PT content. A high recoverable energy storage density of 13.02 ± 0.39 J/cm³ was achieved in the BNT-0.10PT thin films due to the high field endurance and significantly enhanced polarizability. Moreover, a superior piezoelectric response (d₃₃^* = 120 ± 5 pm/V) was also obtained in the 10% PT-modified BNT films, which can be attributed to easy polarization rotation due to low polarization anisotropy on the R-T phase boundary. These properties indicate that BNT-0.10PT films might be promising multifunctional materials for piezoelectric micro-actuator and energy storage embedded capacitor applications.     

Structural,dielectric and ferroelectric properties of Ba1−x(Bi0.5Na0.5)xTiO3 ceramics

Lead free Ba_1?x(Bi_0.5Na_0.5)_xTiO₃ (x=0, 0.02, 0.04, 0.06, 0.08, 0.1) ferroelectric ceramics were synthesized by conventional solid state reaction technique. Sintering was done at 1200 °C for 2 h in air atmosphere. The final products have tetragonal symmetry with decreasing c/a ratio confirmed by X-ray diffraction analysis. The grain size varies between 300 nm to 1000 nm for x=0 to 0.1. With increase in Bi_0.5Na_0.5TiO₃ [BNT] content, the room temperature permittivity decreases whereas the Curie temperature (T_c) increases and its highest value was found to be 155 °C for 10 mol% of BNT addition. The ceramics show stable and low dielectric loss characteristics. The remnant polarization (P_r) and the coercive field (E_c) increases monotonously with increase in BNT content. The highest value of 2P_r (=17 μC/cm²) and 2E_c (=22 Kv/cm) was obtained for x=10 mol% BNT addition.     

Processing and enhanced electrical properties of Sr1-x(K0.5Bi0.5)xBi2Nb2O9 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics, Sr_1−x(K_0.5Bi_0.5)_xBi₂Nb₂O₉ (SKBN-x, x=0, 0.2, 0.5, 1.0), were synthesized by a conventional solid-state reaction. Structural and electrical properties of SKBN-x ceramics were investigated. X-ray diffraction analysis suggested that the substitution led to the formation of a layered perovskite structure. Plate-like morphologies for the grains were clearly observed in all the samples, which are characteristic for layer-structure Aurivillius compounds. The Curie temperature (T_c) is found to shift to higher temperature from 445 °C to 509 °C with increasing (K, Bi) content. Excellent remanent polarization (2P_r∼15 μC/cm²) were obtained for SKBN-0.2 ceramic. High piezoelectric coefficient of d₃₃∼21  pC/N were obtained for the samples at x=0.5. Additionally, thermal annealing studies indicated that the piezoelectric coefficient (d₃₃) of SKBN-0.5 was unchanged even if annealing temperature increased to be 450 °C, demonstrating the ceramics are the promising candidates for high-temperature applications.     

Synthesis and electrical properties of lead-free piezoelectric Bi0.5Na0.5TiO3 thin films prepared by Sol-Gel method

Lead-free Bi_0.5Na_0.5TiO₃ (BNT) piezoelectric thin films were deposited on Pt/TiO_x/SiO₂/Si substrates by Sol-Gel method. A dense and well crystallized thin film with a perovskite phase was obtained by annealing the film at 700 °C in a rapid thermal processing system. The relative dielectric constant and loss tangent at 12 kHz, of BNT thin film with 350 nm thickness, were 425 and 0.07, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 9 μC/cm² and a coercive field of 90 kV/cm. Piezoelectric measurements at the macroscopic level were also performed: a piezoelectric coefficient (d_33effmax) of 47 pm/V at E = 190 kV/cm was obtained. The piezoresponse force microscopy data confirmed that BNT thin films present ferroelectric and piezoelectric behavior at the nanoscale level.     

Morphotropic phase boundary in the BNT–BT–BKT system

Lead-free x Bi_0.5Na_0.5TiO₃–y BaTiO₃–z Bi_0.5K_0.5TiO₃ piezoelectric ceramics were synthesized by a conventional solid state reaction method. The microstructure, ferroelectric and piezoelectric properties of the ceramics were investigated. Structure measurements by X-ray diffraction with Rietveld refinement have allowed us to specify more precisely the morphotropic phase boundary (MPB) in this system. For (1 ? x) BNT–x BT solid solution ceramics, the 0.94 BNT–0.06 BT morphotropic composition shows the higher values with d₃₃ = 170 pC/N, k_p = 0.35 and k_t = 0.53. In the case of (1 ? x) BNT–x BKT compositions, the d₃₃, k_p and k_t are, respectively, 137 pC/N, 0.39 and 0.54 for the 0.80 BNT–0.20 BKT ceramic. On the other hand, the ternary 0.865 BNT–0.035 BT–0.100 BKT morphotropic composition shows high piezoelectric constant and electromechanical coupling factors (d₃₃ = 133 pC/N, k_p = 0.26 and k_t = 0.57).     

Influence of the composition-induced structure evolution on the electrocaloric effect in Bi0.5Na0.5TiO3-based solid solution

The present work investigated the influence of the composition induced structure evolution on the electrocaloric effect in lead-free (0.935−x)Bi_0.5Na_0.5TiO₃–0.065BaTiO₃–xSrTiO₃ (BNBST, BNBSTx) ceramics. It was found that broad ∆T peak could be observed for all compositions and the electrocaloric strength α (α=ΔT_max/ΔE) in BNBST0.02 could reach as high as 0.27 K mm/kV. The increase of the SrTiO₃ concentration led to a shift of ∆T_max to a lower temperature, resulting in a large near room-temperature electrocaloric strength α of 0.17 K mm/kV in BNBST0.22.     

Effects of Nb-doping on the micro-structure and dielectric properties of (Bi0.5Na0.5)TiO3 ceramics

Bismuth sodium titanate [(Bi_0.5Na_0.5)TiO₃ or BNT] ceramics incorporated with 0, 1, 5, 10, 15 and 20 mol% niobium were prepared by conventional solid state reaction method. The green bodies were sintered at 1050 °C for 2 h to obtain dense ceramics. The effects of substitution of niobium ion for titanium ion in BNT ceramics on micro-structure and dielectric properties were investigated. X-ray diffraction analysis showed the presence of a secondary phase when more than 5 mol% niobium was added. Within the solubility limit, Nb doping caused the grain size of BNTNb to be smaller than the undoped sample. The investigation of the dielectric properties showed that the transition temperature (T_c) was found to shift towards lower temperature as the content of Nb increased. In this research, the donor-type behavior and induced charged defects had significant influence on the electrical properties of Nb-doped BNT ceramics.     

Structural and electrical properties of Na0.5Bi4.0RE0.5Ti4O15 (RE=Tm,Yb and Lu) thin films

In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na_0.5Bi_4.5Ti₄O₁₅ (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na_0.5Bi_4.5Ti₄O₁₅ and the rare earth metal ion-doped Na_0.5Bi_4.0RE_0.5i₄O₁₅ (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na_0.5Bi_4.0RE_0.5Ti₄O₁₅ thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96×10⁻⁷ A/cm² at an applied electric field of 100 kV/cm and a large remnant polarization (2P_r) of 26.7 μC/cm² at an applied electric field of 475 kV/cm.     

The electrical properties of (1−x)(Bi0.5Na0.5TiO3–Bi0.5K0.5TiO3–BaTiO3)–xCaZrO3 lead-free piezoelectric ceramics

Lead-free (1−x)(0.0852Bi_0.5Na_0.5TiO₃–0.12Bi_0.5K_0.5TiO₃–0.028BaTiO₃)–xCaZrO₃ piezoelectric ceramics (BNT−BKT−BT−xCZ, x=0, 0.01, 0.02, 0.03, 0.04 and 0.05) were prepared by using a conventional solid-state reaction method. The effects of CZ-doping on the structural, dielectric, ferroelectric and piezoelectric properties of the BNT−BKT−BT−xCZ system were systematically investigated. The polarization and strain behaviors indicated that the long-range ferroelectric order in the unmodified BNT−BKT−BT ceramics was disrupted by the increase of CZ-doping content, and correspondingly the depolarization temperature (T_d) shifted down from 109 °C to below room temperature. When x>0.03, accompanied with the drastic decrease in the remnant polarization (P_r) and piezoelectric coefficient (d₃₃), the electric-field-induced strain was enhanced significantly. A large unipolar strain of 0.35% under an applied electric field of 70 kV/cm (S_max/E_max=500 pm/V) was obtained in the BNT−BKT−BT−0.04CZ ceramics at room temperature, which was attributed to the reversible electric-field-induced phase transition between the relaxor and ferroelectric phases.     

High performance lead-free piezoelectric 0.96(K0.48Na0.52)NbO3-0.03[Bi0.5(Na0.7K0.2Li0.1)0.5]ZrO3-0.01(Bi0.5Na0.5)TiO3 single crystals grown by solid state crystal growth and their phase relations

0.96(K_0.48Na_0.52)NbO₃-0.03[Bi_0.5(Na_0.7K_0.2Li_0.1)_0.5]ZrO₃-0.01(Bi_0.5Na_0.5)TiO₃ single crystals were grown for the first time by the solid state crystal growth method, using [001] or [110]-oriented KTaO₃ seed crystals. The grown single crystal shows a dielectric constant of 2720 and polarization-electric field loops of a lossy normal ferroelectric, with P_r = 45 μC/cm² and E_c = 14.9 kV/cm, while the polycrystalline samples with a dielectric constant of 828 were too leaky for P-E measurement due to humidity effects. The single crystal has orthorhombic symmetry at room temperature. Dielectric permittivity peaks at 26 °C and 311 °C, respectively, are attributed to rhombohedral-orthorhombic and tetragonal–cubic phase transitions. Additionally, Raman scattering shows the presence of an orthorhombic-tetragonal phase transition at ∼150 °C, which is not indicated in the permittivity curves but by the loss tangent anomalies. A transition around 700 °C in the high temperature dc conductivity is suggested to be a ferroelastic-paraelastic transition.     

Morphotropic phase boundary and electrical properties of lead-free (K0.5Bi0.5)TiO3–Bi(Ni0.5Ti0.5)O3 relaxor ferroelectric ceramics

Lead-free relaxor ferroelectric ceramics (1?x)(K_0.5Bi_0.5)TiO₃–xBi(Ni_0.5Ti_0.5)O₃ were prepared by a conventional solid-state route, the phase transition behavior and corresponding electrical properties were investigated. A typical morphotropic phase boundary (MPB) between rhombohedral and tetragonal ferroelectric phases was identified to be in the range of 0.05<x<0.07 where the optimum piezoelectric and electromechanical properties of d₃₃=126 pC/N and k_P=18% were achieved. Most importantly, a high Curie temperature ~320 °C, around which the material shows a typical relaxor ferroelectric behavior characterized by the presence of diffuse phase transition and frequency dispersion, was obtained in MPB compositions, significantly higher than those of some existing MPB lead-free titanate systems. These results demonstrate a tremendous potential of the studied system for device applications.     

Relaxor behavior and ferroelectric properties of a new Ba4SmFe0.5Nb9.5O30 tungsten bronze ceramic

Unfilled tungsten bronze ceramics with a composition of Ba₄SmFe_0.5Nb_9.5O₃₀ were prepared by the conventional solid-state sintering method. The phase, microstructure, dielectric and ferroelectric properties were studied. Room temperature XRD results indicated that the ceramic occurs in the tetragonal space group P4bm phase with cell parameters of a=b=12.4712(2) Å and c=3.9430(2) Å. The temperature-dependent dielectric properties, XRD data and Raman spectra data indicated that BSFN ceramics exhibit no phase changes from 35 °C to 450 °C. Fitting of a Vogel-Fulcher relationship with an activated energy E_a of 0.11 eV indicates an unambiguous dielectric relaxor state near room temperature. Furthermore, the BSFN ceramics exhibited residual polarization and coercive field of 3.45 µC/cm² and 24.65 kV/cm, respectively.     

Chemical composition and tolerance factor at the morphotropic phase boundary in (Bi0.5Na0.5)TiO3-based piezoelectric ceramics

A quantitative relation between the morphotropic phase boundary (MPB) composition and the tolerance factor (t) in (Bi_0.5Na_0.5)TiO₃ (BNT)-based piezoelectric ceramics was established. The t value of the MPB compositions in BNT-based ceramics is around 0.990–0.993 and is independent of the types of added compounds. In order to experimentally demonstrate it, two piezoelectric ceramic systems (1 ? x)(Bi_0.5Na_0.5)TiO₃–x(Ba_1?aSr_a)TiO₃, a = 0.05 and 0.3 (BNBST5-x and BNBST30-x, x < 12%), were used. X-ray diffraction patterns and the lattice parameter investigations revealed that these two systems formed solid solutions within the studied stoichiometry and showed a rhombohedral–tetragonal phase transformation. Furthermore, both the structure analysis and electric properties measurements indicated that the MPB compositions were BNBST5-6 and BNBST30-8 and their corresponding t value were 0.9900 and 0.9903, respectively. The results confirm the relation between the MPB composition and t value and provide a method for designing new piezoelectric materials.