Tuning electrical properties of PZT film deposited by Pulsed Laser Deposition

The variation of the chemical composition and properties of PZT films as a function of oxygen pressure and laser fluence during pulsed laser deposition is used to tune the electrical properties of the PZT thin films. It is found that the deposition using a 248 nm laser fluence of 1.7 J/cm² and an oxygen pressure of 400 mtorr results the PZT films very similar to that of target material. Changing the laser fluences or oxygen pressure, affects the lead content of the deposited film. In the range of oxygen pressure 50–200 mtorr, the Zr/Zr+Ti and Ti/Zr+Ti ratio varies with oxygen pressure while the Pb/Zr+Ti ratio is almost uniform. Using oxygen pressure as a control parameter to tune the chemical compound and electrical properties of the deposited PZT films, the remnant polarization of the PZT films is tuned in the range of 6.6–42.2 µC/cm², the dielectric constant is controlled in the range of 29–130, and the piezoelectric constant d₃₃ is controlled in the range of 3.82–4.96 pm/V for a 40 nm thick PZT film.     

Structural and electrical properties of Pb(Zr0.53Ti0.47)O3 films prepared on La0.5Sr0.5CoO3 coated Si substrates

PbZr_0.53Ti_0.47O₃ (PZT) thin films with thickness of 0.9 μm were prepared on La_0.5Sr_0.5CoO₃ (LSCO) coated Si substrates. Both PZT and LSCO were prepared by the sol–gel method. The concentration of LSCO sol was varied from 0.3 to 0.1 mol/L, which could modify the preferential orientation of PZT thin films and consequently affect the dielectric and ferroelectric properties. The LSCO electrode layers derived from lower sol concentration of 0.1 mol/L have much more densified structure, which facilitates the formation of (1 0 0) textured PZT films with smooth and compact columnar grains. PZT thin films prepared on the optimized LSCO films exhibit the enhanced dielectric constant and remnant polarization of 980 and 20 μC/cm², respectively.     

Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer

Sub-5 µm pattern of sol-gel derived lead-zirconium-titanate (PZT) film with a thickness of 80–390 nm was successfully prepared on Pt(111)/TiO_x/SiO₂/Si (100) substrate by a novel lift-off process using solution-processed metal oxides as a sacrificial layer. The process is simply divided into three steps: In-Zn-O (IZO) sacrificial layer spin-coating and patterning, PZT film formation followed by lift-off process. The results suggested that the IZO layer is effective in preventing PZT crystallization because of its thermal stability during PZT post-annealing, and its barrier-effects between the spin-coated PZT precursor and the Pt/TiO_x substrate. Consequently, the micro-pattern of lift-off PZT exhibited better properties than that formed by wet-etching. In particular, the lift-off PZT films possessed better ferroelectric properties, higher break-down voltage, and more well-defined shape than those of films patterned by conventional wet-etching. This lift-off process shows great promise for highly integrated devices due to its fine pattern-ability.     

Quantitative microstructural analysis and piezoelectricity of highly dense,submicron-structured NaNbO3 ceramics from mechanically activated precursors

We study in this work the processing of NaNbO₃ ceramics prepared in a single thermal treatment of highly reactive precursors obtained by mechanical activation of different reagents, aiming to determine optimum conditions for piezoelectric ceramics production. Pressure-less sintering at 1200 °C leads to dense ceramics (<5% porosity) with poor mechanical stability, unsuitable for practical uses. Dense hot-pressed ceramics were also obtained at lower temperatures (900–1100 °C), all of them in the submicron range of average grain sizes (<400 nm). Their microstructure was quantitatively characterized and their elastic and electromechanical properties determined by an automatic iterative method from impedance measurements at resonance. A noticeable ensemble of piezoelectric and elastic properties (d₃₃ = 38 pC N^?1 and N_p = 3252 kHz mm) was measured for hot-pressed ceramics, from precursors obtained by a combined route of wet-chemistry and mechanical activation, with a microstructure characterized by 0.4% residual porosity and a bimodal lognormal distribution of grain size.     

Influence of SiC particle addition on the nucleation density and adhesion strength of MPCVD diamond coatings on Si3N4 substrates

It is generally accepted that SiC layers are often involved in the adhesion efficiency of chemical vapour deposition (CVD) diamond films on Si-containing substrates. Si₃N₄–SiC composite substrates with different amounts of SiC particles (0–50 wt%) were then used for diamond deposition. Samples were produced by pressureless sintering (1750°C, N₂ atmosphere, 2–4 h). The diamond films were grown on a commercial MPCVD reactor using H₂/CH₄ mixtures. Despite there being no special substrate pre-treatment, the films were densely nucleated when SiC was added (N_d≈1×10¹⁰ cm⁻²) with primary nanosized (∼100 nm) particles, followed by a less dense (N_d≈1×10⁶ cm⁻²) secondary nucleation. Indentation experiments with a Brale tip of up to 588 N applied load corroborated the benefit of SiC inclusion for a strong adhesion. The low thermal expansion coefficient mismatch between Si₃N₄ and diamond resulted in very low compressive stresses in the film, as proved by micro-Raman spectroscopy.     

Laser-transfer processing of functional ceramic films

Pulsed excimer laser irradiation through a UV-transparent fabrication substrate has been successfully employed to separate PZT thick films from their sapphire host substrates. Films of 20 μm in thickness were prepared by a hybrid particle sol–gel synthesis route. The microstructure, morphology and ferroelectric properties of the thick films after laser-transfer have been examined. Films were irradiated with a 248 nm, 15 ns pulse, and transferred to a platinised silicon substrate (Pt/Ti/SiO₂/Si). A laser fluence of 250 mJ/cm² was sufficient to delaminate the original PZT/sapphire interface. The pulsed energy density used here is lower than reported by other groups utilising a laser-transfer process for PZT. This is believed to be due to higher levels of porosity at the film/substrate interface in this study.     

785 nm Raman spectroscopy of CVD diamond films

Raman spectroscopy is a powerful technique often used to study CVD diamond films, however, very little work has been reported for the Raman study of CVD diamond films using near-infrared (785 nm) excitation. Here, we report that when using 785 nm excitation with 1 µm spot size, the Raman spectra from thin polycrystalline diamond films exhibit a multitude of peaks (over 30) ranging from 400–3000 cm^− 1. These features are too sharp to be photoluminescence, and are a function of film thickness. For films > 30 µm thick, freestanding films, and for films grown in diamond substrates the Raman peaks disappear. This suggests that the laser is probing the vibrations of molecular units at the grain boundaries of the disordered crystallites present at the interface between the diamond and substrate.     

Thermal analysis of submicron nanocrystalline diamond films

The thermal properties of sub-μm nanocrystalline diamond films in the range of 0.37–1.1 μm grown by hot filament CVD, initiated by bias enhanced nucleation on a nm-thin Si-nucleation layer on various substrates, have been characterized by scanning thermal microscopy. After coalescence, the films have been outgrown with a columnar grain structure. The results indicate that even in the sub-μm range, the average thermal conductivity of these NCD films approaches 400 W m^− 1 K^− 1. By patterning the films into membranes and step-like mesas, the lateral component and the vertical component of the thermal conductivity, k_lateral and k_vertical, have been isolated showing an anisotropy between vertical conduction along the columns, with k_vertical ≈ 1000 W m^− 1 K^− 1, and a weaker lateral conduction across the columns, with k_lateral ≈ 300 W m^− 1 K^− 1.     

Effect of excess lead on the structural and electrical characteristics of sol-gel synthesized RuO2/Pb(ZrxTi1−x)O3/RuO2

In this study, we investigated the effect of excess lead on the structural and electrical characteristics of lead zirconate titanate [Pb(Zr_xTi_1−x)O₃, PZT] thin films using the sol-gel spin coating method. X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and field-emission transmission electron microscopy were used to study the structural, morphological, chemical, and microstructural features, respectively, of these films as functions of the growth conditions (excess lead concentrations of 10, 20, and 25 mol%). The PZT thin film prepared at the 20 mol% condition exhibited the best electrical characteristics including a lower leakage current of 6×10⁻⁷ A/cm² at an electric field of 50 kV/cm, a larger capacitance value of 1.92 μF/cm² at a frequency of 1 kHz, and a higher remanent polarization of 20.1 μC/cm² at a frequency of 5 kHz. We attribute this behavior to the optimal amount of excess lead in this PZT film forming a perovskite structure and suppressing the reaction of PZT film with RuO₂ electrode.     

Impact of Sr-doping on structural and electrical properties of Pb(Zr0.52Ti0.48)O3 thin films on RuO2 electrodes

In this paper, we investigated the impact of Sr-doping on the structural properties and electrical characteristics of lead zirconate titanate [Pb(Zr_0.52Ti_0.48)O₃, PZT] thin films deposited on RuO₂ electrodes by a sol-gel process and spin-coating technique. We used X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and field-emission transmission electron microscopy to explore the structural, morphological, chemical, and microstructural features, respectively, of these films as a function of the growth condition (strontium doping concentrations varied from 1, 3, and 5 mol%). The PZT thin film processed at the 3 mol% Sr exhibited the best electrical characteristics, including a low leakage current of 2.27×10⁻⁷ A/cm² at an electric field of 50 kV/cm, a large capacitance value of 2.74 μF/cm² at a frequency of 10 kHz, and a high remanent polarization of 37.95 μC/cm² at a frequency of 5 kHz. We attribute this behavior to the optimal amount of strontium in the PZT film forming a perovskite structure and a thicker interfacial layer at the PSZT film-RuO₂ electrode interface.     

Anode-supported SOFCs based on Sm0.2Ce0.8O2−δ electrolyte thin-films fabricated by co-pressing using microwave combustion synthesized powders

Decreasing the electrolyte thickness is an effective approach to improve solid oxide fuel cells (SOFCs) performance for intermediate-temperature applications. Sm_0.2Ce_0.8O_2−δ (SDC) powders with low apparent density of 32±0.3 mg cm⁻³ are synthesized by microwave combustion method, and SDC electrolyte films as thin as ~10 μm are fabricated by co-pressing the powders onto a porous NiO–SDC anode substrate. Dense SDC electrolyte thin films with grain size of 300–800 nm are achieved at a low co-firing temperature of 1200 °C. Single cells based on SDC thin films show peak power densities of 0.86 W cm⁻² at 650 °C using 3 vol% humidified H₂ as fuel and ambient air as oxidant. Both the thin thickness of electrolyte films and ultra-fine grained anode structure make contributions to the improved cell performance.     

Thermal,mechanical and electrical properties of hard B4C,BCN, ZrBC and ZrBCN ceramics

We study the thermal, mechanical and electrical properties of B₄C, BCN, ZrBC and ZrBCN ceramics prepared in the form of thin films by magnetron sputtering. We focus on the effect of Zr_x(B₄C)_1−x sputter target composition, the N₂+Ar discharge gas mixture composition, the deposition temperature and the annealing temperature after the deposition. The thermal properties of interest include thermal conductivity (observed in the range 1.3–7.3 W m⁻¹ K⁻¹), heat capacity (0.37–1.6×10³ J kg⁻¹ K⁻¹ or 1.9–4.1×10⁶ Jm⁻³ K⁻¹), thermal effusivity (1.6–4.5×10³ J m⁻² s^−1/2 K⁻¹) and thermal diffusivity (0.38–2.6×10⁻⁶ m² s⁻¹). We discuss the relationships between materials composition, preparation conditions, structure, thermal properties, temperature dependence of the thermal properties and other (mechanical and electrical) properties. We find that the materials structure (amorphous×crystalline hexagonal ZrB₂-like×nanocrystalline cubic ZrN-like), more than the composition, is the crucial factor determining the thermal conductivity and other properties. The results are particularly important for the design of future ceramic materials combining tailored thermal properties, mechanical properties, electrical conductivity and oxidation resistance.     

Investigation of the nucleation and growth mechanisms of nanocrystalline diamond/amorphous carbon nanocomposite films

Nucleation and growth, but especially the development of the morphology of nanocrystalline diamond/amorphous carbon (NCD/a-C) nanocomposite films have been investigated by systematic variation of three important parameters, namely the deposition time, the growth rate, and the substrate pre-treatment used to enhance the nucleation density. The films have been characterized, among others, by scanning electron microscopy, atomic force microscopy, and Fourier transform infrared spectroscopy. It is shown that, by successive addition of ultradispersive diamond powder to the suspension of nanocrystalline diamond powder in n-pentane used for the ultrasonic pre-treatment, the nucleation density can be enhanced by two orders of magnitude from 1 · 10⁸ cm^− 2 to > 1 · 10¹⁰ cm^− 2. This reduces the thickness required to achieve closed films from 1 µm to 100 nm. However, once coalescence of the individual nodules emerging from the nucleation sites has taken place the films loose “memory” of the nucleation step and start to develop the typical NCD morphology consisting of larger features with diameters of some hundreds of nm which are in turn composed of much smaller features. Irrespective of the feature size and of the parameters used, the films of this investigation possess AFM rms roughnesses of 9–13 nm, indicating that rms values are not sufficient to characterize NCD surfaces.     

Bio-inspired cross-linking with borate for enhancing gas-barrier properties of poly(vinyl alcohol)/graphene oxide composite films

The demand for flexible and transparent barrier films in industries has been increasing. Learning from nature, borate ions were used to cross-link poly(vinyl alcohol) (PVA) and graphene oxide (GO) to produce flexible, transparent high-barrier composite films with a bio-inspired structure. PVA/GO films with only 0.1 wt% GO and 1 wt% cross-linker exhibited an O₂ transmission rate <0.005 cc m⁻² day⁻¹, an O₂ permeability <5.0 × 10⁻²⁰ cm³ cm cm⁻² Pa⁻¹ s⁻¹, and a transmittance at 550 nm >85%; thus, they can be used for flexible electronics. Fourier transform infrared spectrometry and X-ray photoelectron spectroscopy indicated that the outstanding barrier properties are attributed to the formation of chemical cross-linking involving borate ions, GO sheets, and PVA, similar to the borate cross-links in high-order plants. Comparing our experimental data with the Cussler model, we found that the effective aspect ratio was significantly increased after cross-linking, suggesting that cross-linking networks connected GO with each other to form ultra-large impermeable regions. A feasible green technique, with potential for commercial production of barrier films for flexible electronics was presented.     

Lead zirconium titanate thin films prepared by thermal annealing of multilayer structures composed of PbO,ZrO2 and TiO2

Lead zirconium titanate [Pb(Zr_xTi_1?x)O₃ or PZT] thin films were prepared by the thermal annealing of multilayer films composed of binary oxide layers of PbO, ZrO₂ and TiO₂. The binary oxides were deposited by metal organic chemical vapor deposition. An interdiffusion reaction for perovskite PZT thin films was initiated at approximately 550 °C and nearly completed at 750 °C for 1 h under O₂ annealing atmosphere. The composition of Pb/Zr/Ti in perovskite PZT could be controlled by the thickness ratio of PbO/ZrO₂/TiO₂ where the contribution of each binary oxide at the same thickness was 1:0.55:0.94. The electrical properties of PZT (Zr/Ti = 40/60, 300 nm) prepared on a Pt-coated substrate included a dielectric constant ?_r of 475, a coercive field E_c of 320 kV/cm, and remnant polarization P_r of 11 μC/cm² at an applied voltage of 18 V.     

Electrical properties of a-C: Mo films produced by dual-cathode filtered cathodic arc plasma deposition

Molybdenum-containing amorphous carbon (a-C:Mo) thin films were prepared using a dual-cathode filtered cathodic arc plasma source with a molybdenum and a carbon (graphite) cathode. The Mo content in the films was controlled by varying the deposition pulse ratio of Mo and C. Film sheet resistance was measured in situ at process temperature, which was close to room temperature, as well as ex situ as a function of temperature (300–515 K) in ambient air. Film resistivity and electrical activation energy were derived for different Mo and C ratios and substrate bias. Film thickness was in the range 8–28 nm. Film resistivity varied from 3.55 × 10^− 4 Ω m to 2.27 × 10^− 6 Ω m when the Mo/C pulse ratio was increased from 0.05 to 0.4, with no substrate bias applied. With carbon-selective bias, the film resistivity was in the range of 4.59 × 10^− 2 and 4.05 Ω m at a Mo/C pulse ratio of 0.05. The electrical activation energy decreased from 3.80 × 10^− 2 to 3.36 × 10^− 4 eV when the Mo/C pulse ratio was increased in the absence of bias, and from 0.19 to 0.14 eV for carbon-selective bias conditions. The resistivity of the film shifts systematically with the amounts of Mo and upon application of substrate bias voltage. The intensity ratio of the Raman D-peak and G-peak (I_D/I_G) correlated with the pre-exponential factor (σ₀) which included charge carrier density and density of states.     

Tribological behaviour of RF-magnetron sputter deposited hydroxyapatite coatings in physiological solution

The aim of the paper is to explore the tribological performance of hydroxyapatite (HA) coatings deposited by radio frequency (RF) magnetron sputtering on AZ31 magnesium alloy (96% Mg, 3% Al, 0.7% Zn, 0.3% Mn) for biomedical applications. In this study, the position of the samples on a substrate holder, relative to a target erosion zone was taken into consideration in order to elucidate its impact on the coating characteristics, such as composition, morphology, surface topography and tribology. Substrate rotation and arc-movement were foreseen in the experimental set-up to increase the uniformity of thin film properties. The deposited HA thin films were revealed to exhibit an increase of the Ca/P ratio from 1.83 to 1.97, a decrease of (002) texture and thickness, as the samples were shifted towards the target erosion zone. By coatings, the roughness of Mg alloy was decreased (R_{a Mg alloy}=31.3 nm; R_{a coating}=29 nm and 21 nm). The coating placed in the centre of the substrate holder showed high hardness and Young's modulus (H =8.3±0.9 GPa; E=89±10 GPa) than the coating prepared under the target erosion zone (H =6.9±1.1 GPa; E=75±6 GPa). The coating deposited under target erosion zone exhibits superior friction behaviour in simulated body fluid environment, with the friction coefficient (μ) of 0.184, while the sample located in the centre of the substrate holder possesses the friction coefficient (0.306) comparable to the AZ31 substrate (0.307). The low wear rate was determined in the case of coating deposited under target erosion zone (4.83×10⁻⁵ mm³ N⁻¹ m⁻¹) than uncoated AZ31 substrate (0.00518 mm³ N⁻¹ m⁻¹) or than coating placed in the centre of the substrate holder (0.00294 mm³ N⁻¹ m⁻¹).     

Electrical properties and energy-storage performance of (Pb0.92Ba0.05La0.02)(Zr0.68Sn0.27Ti0.05)O3 antiferroelectric thick films prepared by tape-casing method

The energy-storage performance and dielectric properties of tape-cast (Pb_0.92Ba_0.05La_0.02)(Zr_0.68Sn_0.27Ti_0.05)O₃ (PBLZST) antiferroelectric (AFE) thick films with different thicknesses were systematically studied. As the thickness of the thick films increased from 40 to 80 µm, the dielectric constant and saturation polarization (P_s) of the thick films were gradually increased, while their corresponding breakdown strength (BDS) was decreased. A maximum recoverable energy-storage density of 6.8 J/cm³, companied by an efficiency of 61.2%, was achieved in the PBLZST AFE thick film with a thickness of 40 µm at room temperature. Moreover, the energy density of the PBLZST AFE thick films also displayed good thermal stability over 25–200 °C. In addition, all the samples had a low leakage current density of ~10⁻⁶ A/cm² at room temperature. These findings demonstrated that the PBLZST thick films should be a promising candidate for applications in high energy-storage capacitors.     

Fabrication of highly efficient TiO2/Ag/TiO2 multilayer transparent conducting electrode with N ion implantation for optoelectronic applications

Fabrication of highly conductive and transparent TiO₂/Ag/TiO₂ (referred hereafter as TAT) multilayer films with nitrogen implantation is reported. In the present work, TAT films were fabricated with a total thickness of 100 nm by sputtering on glass substrates at room temperature. The as-deposited films were implanted with 40 keV N ions for different fluences (1×10¹⁴, 5×10¹⁴, 1×10¹⁵, 5×10¹⁵ and 1×10¹⁶ ions/cm²). The objective of this study was to investigate the effect of N⁺ implantation on the optical and electrical properties of TAT multilayer films. X-ray diffraction of TAT films shows an amorphous TiO₂ film with a crystalline peak assigned to Ag (111) diffraction plane. The surface morphology studied by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) revealed smooth and uniform top layer of the sandwich structure. The surface roughness of pristine film was 1.7 nm which increases to 2.34 nm on implantation for 1×10¹⁴ ions/cm² fluence. Beyond this fluence, the roughness decreases. The oxide/metal/oxide structure exhibits an average transmittance ~80% for pristine and ~70% for the implanted film at fluence of 1×10¹⁶ ions/cm² in the visible region. The electrical resistivity of the pristine sample was obtained as 2.04×10⁻⁴ Ω cm which is minimized to 9.62×10⁻⁵ Ω cm at highest fluence. Sheet resistance of TAT films decreased from 20.4 to 9.62 Ω/□ with an increase in fluence. Electrical and optical parameters such as carrier concentration, carrier mobility, absorption coefficient, band gap, refractive index and extinction coefficient have been calculated for the pristine and implanted films to assess the performance of films. The TAT multilayer film with fluence of 1×10¹⁶ ions/cm² showed maximum Haacke figure of merit (FOM) of 5.7×10⁻³ Ω⁻¹. X-ray photoelectron spectroscopy (XPS) analysis of N 1s and Ti 2p spectra revealed that substitutional implantation of nitrogen into the TiO₂ lattice added new electronic states just above the valence band which is responsible for the narrowing of band gap resulting in the enhancement in electrical conductivity. This study reports that fabrication of multilayer transparent conducting electrode with nitrogen implantation that exhibits superior electrical and optical properties and hence can be an alternative to indium tin oxide (ITO) for futuristic TCE applications in optoelectronic devices.     

Effect of milling type on the microstructural and mechanical properties of W-Ni-ZrC-Y2O3 composites

This study reports the effect of milling type on the microstructural, physical and mechanical properties of the W-Ni-ZrC-Y₂O₃ composites. Powder blends having the composition of W-1 wt% Ni-2 wt% ZrC-1 wt% Y₂O₃ were milled at room temperature for 12 h using a Spex™ 8000D Mixer/Mill or cryomilled in the presence of externally circulated liquid nitrogen for 10 min using a Spex™ 6870 Freezer/Mill or sequentially milled at room temperature and cryogenic condition. Then, powders were compacted in a hydraulic press under a uniaxial pressure of 400 MPa and green bodies were sintered at 1400 °C for 1 h under Ar/H₂ atmosphere. Phase and microstructural characterization of the milled powders and sintered samples were performed using X-ray diffractometer (XRD), TOPAS software, scanning electron microscope/energy dispersive spectrometer (SEM/EDS), X-ray fluorescence (XRF) spectrometer and particle size analyzer (PSA). Archimedes density and Vickers microhardness measurements, and sliding wear tests were also conducted on the sintered samples. The results showed that sequential milling enables the lowest average particle size (214.90 nm) and it is effective in inhibiting W grain coarsening during sintering. The cryomilled and sintered composite yielded a lower hardness value (5.80±0.23 GPa) and higher wear volume loss value (149.42 µm³) than that of the sintered sample after room temperature milling (6.66±0.39 GPa; 102.50 µm³). However, the sequentially milled and sintered sample had the highest relative density and microhardness values of 95.09% and 7.16±0.59 GPa and the lowest wear volume loss value of 66.0 µm³.