Annealing-temperature-modulated optical,electrical properties,and leakage current transport mechanism of sol–gel-processed high-k HfAlOx gate dielectrics

Deposition of HfAlO_x gate dielectric films on n-type Si and quartz substrates by sol-gel technique has been performed and the optical, electrical characteristics of the as-deposited HfAlO_x thin films as a function of annealing temperature have been investigated. The optical properties of HfAlO_x thin films related to annealing temperature are investigated by ultraviolet-visible spectroscopy (UV–vis) and spectroscopy ellipsometry (SE). By measurement of UV–vis, average transmission of all the HfAlO_x samples are about 85% owing to their uniform composition. And the increase in band gap has been observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on Al/Si/HfAlO_x/Al capacitor are analyzed by means of the high frequency capacitance-voltage (C-V) and the leakage current density-voltage (J-V) characteristics. Results have shown that 400 °C-annealed sample demonstrates good electrical performance, including larger dielectric constant of 12.93 and lower leakage current density of 3.75×10⁻⁷ A/cm² at the gate voltage of 1 V. Additionally, the leakage current conduction mechanisms as functions of annealing temperatures are also discussed systematically.     

Room-temperature UV-ozone assisted solution process for zirconium oxide films with high dielectric properties

A facile, low-cost, and room-temperature UV-ozone (UVO) assisted solution process was employed to prepare zirconium oxide (ZrO_x) films with high dielectric properties. ZrO_x films were deposited by a simple spin-coating of zirconium acetylacetonate (ZrAcAc) precursor in the environment-friendly solvent of ethanol. The smooth and amorphous ZrO_x films by UVO exhibit average visible transmittances over 90% and energy bandgap of 5.7 eV. Low leakage current of 6.0 × 10⁻⁸ A/cm² at 3 MV/cm and high dielectric constant of 13 (100 Hz) were achieved for ZrO_x dielectrics at the nearly room temperature. Moreover, a fully room-temperature solution-processed oxide thin films transistor (TFT) with UVO assisted ZrO_x dielectric films achieved acceptable performances, such as a low operating voltage of 3 V, high carrier mobility of 1.65 cm² V⁻¹ s⁻¹, and on/off current ratio about 10⁴–10⁵. Our work indicates that simple room-temperature UVO is highly potential for low-temperature, solution-processed and high-performance oxide films and devices.     

The effect of annealing on electrical properties of fluorinated amorphous carbon films

Fluorinated amorphous carbon (a–C:F) films have been deposited by electron cyclotron resonance chemical vapor deposition (ECR–CVD) at room temperature using C₄F₈ and CH₄ as precursor gases. The chemical compositions and electrical properties of a–C:F films have been studied by X-ray photoelectron spectroscopy (XPS), capacitance–voltage (C–V) and current-voltage (I–V) measurements. The results show that C–CF_x and C–C species of a–C:F films increase and fluorine content decreases after annealing. The dielectric constant of the annealed a–C:F films increases as a result of enhancement of film density and reduction of electronic polarization. The densities of fixed charges and interface states decrease from 1.6 × 10¹⁰ cm^− 2 and (5–9) × 10¹¹ eV^− 1 cm^− 2 to 3.2 × 10⁹ cm^− 2 and (4–6) × 10¹¹ eV^− 1 cm^− 2 respectively when a–C:F films are annealed at 300 °C. The magnitude of C–V hysteresis decreases due to reduced dangling bonds at the a–C:F/Si interfaces after heat treatment. The conduction of a–C:F films shows ohmic behavior at lower electric fields and is explained by Poole–Frankel (PF) mechanism at higher electric fields. The PF current increases indicative of reduced trap energy when a–C:F films are subjected to higher annealing temperatures.     

Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers

A diamond-based field-effect transistor (FET) with SiN_x and ZrO₂ double dielectric layer has been demonstrated. The SiN_x and ZrO₂ gate dielectric are deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio frequency (RF) sputter methods, respectively. SiN_x layer is found to have the ability to preserve the conduction channel at the surface of hydrogen-terminated diamond film. The leakage current density (J) of SiN_x/ZrO₂ diamond metal-insulator-semiconductor FET (MISFET) keeps lower than 3.88 × 10^− 5 A·cm^− 2 when the gate bias was changed from 2 V to − 8 V. The double dielectric layer FET operates in a p-type depletion mode, whose maximum drain-source current, threshold voltage, maximum transconductance, effective mobility and sheet hole density are determined to be − 28.5 mA·mm^− 1, 2.2 V, 4.53 mS·mm^− 1, 38.9 cm²·V^− 1·s^− 1, and 2.14 × 10¹³ cm^− 2, respectively.     

Growth and properties of hydrogen-free DLC films deposited by surface-wave-sustained plasma

Hydrogen-free diamond-like carbon (DLC) films were deposited by a new surface-wave-sustained plasma physical vapor deposition (SWP-PVD) system in various conditions. Electron density was measured by a Langmuir probe; the film thickness and hardness were characterized using a surface profilometer and a nanoindenter, respectively. Surface morphology was investigated using an atomic force microscope (AFM). It is found that the electron density and deposition rate increase following the increase in microwave power, target voltage, or gas pressure. The typical electron density and deposition rate are about 1.87 × 10¹¹–2.04 × 10¹² cm^− 3 and 1.61–14.32 nm/min respectively. AFM images indicate that the grain sizes of the films change as the experimental parameters vary. The optical constants, refractive index n and extinction coefficient k, were obtained using an optical ellipsometry. With the increase in microwave power from 150 to 270 W, the extinction coefficient of DLC films increases from 0.05 to 0.27 while the refractive index decreases from 2.31 to 2.11.     

Microstructure and electrical characteristics of ZnO–B2O3–PbO–V2O5–MnO2 ceramics prepared from ZnO nanopowders

A peculiar kind of ZnO–B₂O₃–PbO–V₂O₅–MnO₂ ceramics was produced from the ZnO nanopowders directly co-doped with the oxides instead of lead zinc borate frit in this investigation. The 8 wt.% (PbO+B₂O₃) co-doped ceramics sintered at 950 °C for 2 h displayed the optimum electrical properties, that is, leakage current density J_L=6.2×10⁻⁶ A/cm², nonlinear coefficient α=22.8 and breakdown voltage V_BK=331 V/mm. The co-doping of 8 wt.% (PbO+B₂O₃) resulted in an increase in nonlinear coefficient and a decrease in leakage current density of the ZnO–V₂O₅ varistors while the sintering temperature showed no evident influence on nonlinear coefficient and leakage current density at the range of 800–950 °C.     

Comparison of the electrical behavior of Schottky diodes built on the nucleation and growth surfaces of polycrystalline diamond

In this work free-standing polycrystalline diamond was used to build Schottky diodes both on nucleation and growth surface of different films, in surface contact geometry, using gold and aluminum electrodes. The surface films were characterized by micro-Raman spectroscopy and Atomic Force Microscopy. The current–voltage characteristics of the devices were measured in a temperature range from 50 K to room temperature. The diodes showed a barrier height, attributed to the interface grain–metal, ranging from 1.26 to 1.74 V and an ideality factor from 1.4 to 1.8. All the diodes revealed the presence of deep states of energy, and its density close to the Fermi level ranges from 2 × 10¹² to 8 × 10¹⁶ eV^− 1 cm^− 3. These different characteristics were then related with both the films quality and the surface. The hypothesis of using the nucleation surface for building electronic devices is discussed.     

AlGaN/GaN MISHEMT with hBN as gate dielectric

Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator permitting to obtain a low leakage current gate, an interface state density as low as 5 × 1011 cm^? 2 eV^? 1 for hBN/AlGaN interface and low roughness surface less than 0.4 nm. HBN thin film is deposited to have optical c-axis oriented weakly tilted to the perpendicular at the AlGaN barrier surface and to increase the lateral electrical resistivity. DC measurement on MISHEMT exhibits promising performance for microwave power devices associated to a good gate charge control in enhancement mode.     

Electrical properties of a-C: Mo films produced by dual-cathode filtered cathodic arc plasma deposition

Molybdenum-containing amorphous carbon (a-C:Mo) thin films were prepared using a dual-cathode filtered cathodic arc plasma source with a molybdenum and a carbon (graphite) cathode. The Mo content in the films was controlled by varying the deposition pulse ratio of Mo and C. Film sheet resistance was measured in situ at process temperature, which was close to room temperature, as well as ex situ as a function of temperature (300–515 K) in ambient air. Film resistivity and electrical activation energy were derived for different Mo and C ratios and substrate bias. Film thickness was in the range 8–28 nm. Film resistivity varied from 3.55 × 10^− 4 Ω m to 2.27 × 10^− 6 Ω m when the Mo/C pulse ratio was increased from 0.05 to 0.4, with no substrate bias applied. With carbon-selective bias, the film resistivity was in the range of 4.59 × 10^− 2 and 4.05 Ω m at a Mo/C pulse ratio of 0.05. The electrical activation energy decreased from 3.80 × 10^− 2 to 3.36 × 10^− 4 eV when the Mo/C pulse ratio was increased in the absence of bias, and from 0.19 to 0.14 eV for carbon-selective bias conditions. The resistivity of the film shifts systematically with the amounts of Mo and upon application of substrate bias voltage. The intensity ratio of the Raman D-peak and G-peak (I_D/I_G) correlated with the pre-exponential factor (σ₀) which included charge carrier density and density of states.     

Silicon carbide films from polycarbosilane and their usage as buffer layers for diamond deposition

Thin films of polycarbosilane (PCS) were coated on a Si (100) wafer and converted to silicon carbide (SiC) by pyrolyzing them between 800 and 1150 °C. Granular SiC films were derived between 900 and 1100 °C whereas smooth SiC films were developed at 800 and 1150 °C. Enhancement of diamond nucleation was exhibited on the Si (100) wafer with the smooth SiC layer generated at 1150 °C, and a nucleation density of 2 × 10¹¹ cm^− 2 was obtained. Nucleation density reduced to 3 × 10¹⁰ cm^− 2 when a bias voltage of − 100 V was applied on the SiC-coated Si substrate. A uniform diamond film with random orientations was deposited to the PCS-derived SiC layer. Selective growth of diamond film on top of the SiC buffer layer was demonstrated.     

Application of BaO–CaO–Al2O3–B2O3–SiO2 glass–ceramic seals in large size planar IT-SOFC

BaO–CaO–Al₂O₃–B₂O₃–SiO₂ (BCAS) glass–ceramics can be used as sealant for large size planar anode-supported solid oxide fuel cells (SOFCs). BCAS glass–ceramics after heat treatment for different times were characterized by means of thermal dilatometer, X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the coefficients of thermal expansion (CTE) of BCAS glass–ceramics are 11.4×10⁻⁶ K⁻¹, 11.3×10⁻⁶ K⁻¹ and 11.2×10⁻⁶ K⁻¹ after heated at 750 °C for 0 h, 50 h, and 100 h, respectively. The CTE of BCAS matches that of YSZ, Ni–YSZ and the interconnection of SOFC. Needle-like barium silicate, barium calcium silicate and hexacelsian are crystallized in the BCAS glass after heat-treatment for above 50 h at 750 °C. The glass–ceramics green tape prepared by aqueous tape casting can be directly applied in sealing the cell of SOFCs with 10 cm×10 cm. The open circuit voltage (OCV) of the cell keeps 1.19 V after running for 280 h at 750 °C and thermal cycling 10 times from 750 °C to room temperature. The maximum power density is 0.42 W/cm² using pure H₂ as fuel and air as oxidation gas. SEM images show no cracks or pores exist in the interface of BCAS glass–ceramics and the cell.     

Structural and electrical properties of sol–gel-derived Al-doped bismuth ferrite thin films

Al-doped BiFeO₃ (BiFe_(1?x)Al_xO₃) thin films with small doping content (x=0, 0.05, and 0.1) were grown on Pt(111)/TiO₂/SiO₂/Si substrates at the annealing temperature of 550 °C for 5 min in air by the sol–gel method. The crystalline structure, as well as surface and cross section morphology were studied by X-ray diffraction and scanning electron microscope, respectively. The dielectric constant of BiFeO₃ film was approximately 71 at 100 kHz, and it increased to 91 and 96 in the 5% and 10% Al-doped BiFeO₃ films, respectively. The substitution of Al atoms in BiFeO₃ thin films reduced the leakage current obviously. At an applied electric field of 260 kV/cm, the leakage current density of the undoped BiFeO₃ films was 3.97×10^?4 A/cm², while in the 10% Al-substitution BiFeO₃ thin films it was reduced to 8.4×10^?7 A/cm². The obtained values of 2P_r were 63 μC/cm² and 54 μC/cm² in the 5% and 10% Al-doped BiFeO₃ films at 2 kHz, respectively.     

Synthesis of high-quality AZO polycrystalline films via target bias radio frequency magnetron sputtering

The deposition rate, transmittance and resistivity of aluminium-doped zinc oxide (AZO) films deposited via radio frequency (r.f.) sputtering change with target thickness. An effective method to control and maintain AZO film properties was developed. The strategy only involved the regulation of target bias voltage of r.f. magnetron sputtering system. The target bias voltage considerably influenced AZO film resistivity. The resistivity of the as-deposited AZO film was 9.82×10⁻⁴ Ω cm with power density of 2.19 W/cm² at target self-bias of −72 V. However, it decreased to 5.98×10⁻⁴ Ω cm when the target bias voltage was increased to −112 V by applying d.c. voltage. Both growth rate and optical band gap of AZO film increased with the absolute value of target bias voltage – growth rate increased from 10.54 nm/min to 25.14 nm/min, and band gap increased from 3.57eV to 3.71 eV when target bias voltage increased from −72 V to −112 V at r.f. power density of 2.19 W/cm². The morphology of AZO films was slightly affected by the target bias voltage. Regulating target bias voltage is an effective method to obtain high-quality AZO thin films deposited via r.f. magnetron sputtering. It is also a good choice to maintain the quality of AZO film in uptime manufacturing deposition.     

CVD diamond Schottky barrier diode,carrying out and characterization

A p-type diamond Schottky barrier diode (SBD) on homoepitaxial CVD diamond is presented.The technologic steps required to carry out the experimental device are described in this paper. The B-acceptors concentration and the barrier height have been extracted from C–V measurements leading to Ns ～ 1.2 × 10¹⁷ cm^? 3 and Φ_Β = 1.8 eV respectively. The current–voltage experimental measurements performed at room temperature have shown high current density in the range of 900 A/cm². However, the breakdown voltage of the device was limited to 25 V, this low reverse value suggest the presence of a large defect density in the bulk.     

Enhanced ferroelectric properties of Ce-substituted BiFeO3 thin films on LaNiO3/Si substrates prepared by sol–gel process

The effects of Ce substitution on the structural and electrical properties of multiferroic BiFeO₃ thin films grown on LaNiO₃/Si(1 0 0) substrates by a sol–gel process have been reported. X-ray diffraction data confirmed the substitutions of Ce into the Bi site with the elimination of all secondary phases under a substitution ratio x = 15%. The dielectric constants of the films increased from 90 to ～260 below 100 kHz with 5% molar Ce substitution and the films showed enhanced dielectric behavior. We observed a substantial increase in the remnant polarization (P_r) with Ce substitution and obtained a maximum value of ～71 μC/cm² by 5% molar Ce incorporation. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current density decreased from 10^?6 to 10^?8 A/cm² for 5% molar Ce-substituted films under a field 150 kV/cm. The reduction of dc leakage current of Ce-substituted films is explained on the basis of relative phase stability and improved microstructure of the material.     

Homoepitaxial diamond p–n+ junction with low specific on-resistance and ideal built-in potential

We have realized low specific on-resistance and ideal built-in potential simultaneously for a (111)-oriented homoepitaxial diamond p–n⁺ junction. As the p–n⁺ junction, the heavily phosphorus doped n⁺-type layer, which shows variable range hopping conduction, was formed on the (111)-oriented boron doped p-type one. By using this hopping conduction, the resistivity of the n⁺-type layer becomes lower by three orders of magnitude than that of a lightly P-doped layer. Current density–voltage characteristics showed a rectification ratio of 10⁶ at ± 15 V at room temperature. The current density and the specific on-resistance at forward bias voltage of 15 V at room temperature are over 100 A/cm² and 8 × 10^− 2 Ωcm², respectively. This low specific on-resistance corresponds to the lower resistivity of the n⁺-type layer by three orders of magnitude than that of conventional lightly P-doped n-type layer. The existence of the space-charge layer at the vicinity of the p–n⁺ junction was confirmed from capacitance–voltage (C–V) characteristics. From C⁻²–V characteristics at 200 °C, the built-in potential was estimated as approximately 4.4 eV, which is identical to that of conventional diamond p–n junction.     

Effect of anodic and cathodic treatments on the charge transfer of boron doped diamond electrodes

This paper is concerned with the study of the influence of electrochemical pre-treatments on the behavior of highly boron doped diamond electrodes. Anodic and cathodic preconditioning, performed during 10 s either with 10^− 4 A/cm^− 2 (10^− 3 C cm^− 2) or 10^− 1 A/cm^− 2 (1 C cm^− 2), has been studied. Cyclic voltammetry at as-deposited, anodically and cathodically treated electrodes, in presence of 2 redox couples serving as electrochemical probes is analyzed in the light of the surface characterization given by XPS chemical analysis. Ce^4+/3+ redox couple in 0.5 M H₂SO₄ medium and Fe(CN)₆^3−/4− redox couple in 0.1 M KOH medium, have been studied before and after the different treatments. The results of Mott–Schottky plots and current voltage curves are reported and show that the electrochemical response of BDD electrodes is very dependent on the current density involved in the electrochemical preconditioning. The modification of surface bond termination – either hydrogen or oxygen – studied by XPS analyses is also strongly dependent on electrochemical pre-treatment. In particular, it is evidenced that the most important conversion of surface functionalities from hydrogen to oxygen is obtained when the anodic treatment is performed with the smallest current density. Finally, a correlation between surface terminations and charge transfer is evidenced.     

Nonvolatile memory devices based on Au/graphene oxide nanocomposites with bilateral multilevel characteristics

Current–voltage measurements on the Al/self-assembled Au nanoparticles inserted in graphene-oxide (GO) layer/indium-tin-oxide/glass devices at 300 K showed bilateral current bistabilities with four current states in a cell. The multilevel behaviors with four current states were obtained by applying different erasing voltages of −6, −12, and −18 V with a writing voltage of 3 V or different erasing voltages of 8, 14, and 18 V with a writing voltage of −5 V. The resistive memory devices demonstrated bilateral multilevel characteristics due to a nanocomposite consisting of Au nanoparticles inserted in a GO layer. The stabilities of the four current states with 1 × 10⁻¹, 1 × 10⁻⁴, 1 × 10⁻⁶, and 1 × 10⁻⁸ A achieved for the devices by using different erasing voltages were maintained for retention cycles larger than 1 × 10⁴ s under a continuous reading test. Memory operating mechanisms and multilevel characteristics based on the I–V curves were described by using the carrier-capture in the self-assembled Au nanoparticles and the local filament-path on the surface between the electrode and the GO layer.     

Packing density control of carbon nanotube emitters in an anodic aluminum oxide nano-template on a Si wafer

Carbon nanotubes (CNTs) emitters in the AAO templates on a silicon wafer were fabricated. The packing density of CNTs was changed in the order of 1 × 10⁷ − 7 × 10⁷ tips cm^− 2 depending upon the concentration of hydrogen in the reactant gas mixture. The emission current density was strongly dependent upon the packing density of the CNT emitters. Low turn-on fields of 1.6–2.1 V/μm and field enhancement factor of 1900–4970 were observed.     

Structural and electrical properties of Na0.5Bi4.0RE0.5Ti4O15 (RE=Tm,Yb and Lu) thin films

In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na_0.5Bi_4.5Ti₄O₁₅ (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na_0.5Bi_4.5Ti₄O₁₅ and the rare earth metal ion-doped Na_0.5Bi_4.0RE_0.5i₄O₁₅ (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na_0.5Bi_4.0RE_0.5Ti₄O₁₅ thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96×10⁻⁷ A/cm² at an applied electric field of 100 kV/cm and a large remnant polarization (2P_r) of 26.7 μC/cm² at an applied electric field of 475 kV/cm.