Effect of a Bi–Cr–O synthetic multi-phase on the microstructure and electrical properties of ZnO–Bi2O3 varistor ceramics

ZnO–Bi₂O₃–MnO₂ (ZBM)-based varistors were fabricated via doping a novel synthetic multi-phase (SMP) additive produced by calcining the mixture of 18Bi₂O₃·Cr₂O₃ at a given temperature. The effects of the SMP on the microstructural and electrical properties of ZBM varistors were investigated. It was found that the SMP dopant was a compound crystalline phases including Bi–Cr–O phases (Bi_7.38Cr_0.62O_12+x and CrBi₁₈O₃₀) and small amounts of Bi₂O₃ rather than a synthesized polycrystal. The Bi–Cr–O phases were not emerged for samples with x=1, indicating that the amount of it is tiny and the small Bi₂O₃ may accelerate ZnO grain growth. With more SMP doping (x>1) in the ZBM ceramics, it acted as a barrier inhibiting grain growth. For samples with x=5, excellent electrical properties were obtained: the nonlinear coefficient α increased up to 50.19 corresponding to the highly barrier height of 2.62 eV; the leakage current I_L reduced to 0.3 μA. The dielectric constant ε_a is proportional to the ratio of the grain size d to the thickness of the depletion layer width t, which explained the ε_a increased at f=1 kHz for the samples with x=1 and 5. The improvement of the electrical properties can be explained by the oxygen absorption mechanism.     

Influence of Ge and GeO2 on the microstructure and varistor properties of TiO2–Ta2O5–CaCO3 ceramics

This study investigated the effect of elemental crystal Ge or/and GeO₂ doping on the microstructure and varistor properties of TiO₂–Ta₂O₅–CaCO₃ varistor ceramics, which were prepared via the traditional ball milling–molding–sintering process. X-ray diffraction, scanning electron microscopy, scanning transmission electron microscopy-energy dispersive X-ray spectroscopy, scanning electron microscopy-energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy demonstrated that co-doping with Ge and GeO₂ changed the microstructure of TiO₂–Ta₂O₅–CaCO₃ ceramics, thereby increasing the nonlinear coefficient and decreasing the breakdown voltage. The optimum doping concentrations of Ta₂O₅, CaCO₃, Ge, and GeO₂ exhibited the highest nonlinear coefficient (α=14.6), a lower breakdown voltage (E_B=18.7 V mm⁻¹), the least leakage current (J_L=10.5 μA cm⁻²), and the highest grain boundary barrier (Φ_B=1.05 eV). In addition, Ge and GeO₂ function as sintering aids, which reduce the sintering temperature because of their low melting points.     

Effects of Sb2O3 on the microstructure and electrical properties of ZnO–Bi2O3-based varistor ceramics fabricated by two-step solid-state reaction route

In this work, the ZnO–Bi₂O₃–Cr₂O₃–Co₂O₃–MnO₂ varistors doped with different content of Sb₂O₃ were prepared by two-step solid-state reaction route, including a pre-calcining of the mixtures of nanosized ZnO and the other additives at an optimized temperature, followed by a consequent sintering process at different temperatures. Meanwhile, the effects of Sb₂O₃ on the sintering temperature, microstructure and electrical properties of the objective varistors were investigated. It was found the densification temperature went up in a proper range and the content of pyrochlore phase, spinel phase and β-Bi₂O₃ phase increased with the increasing content of Sb₂O₃, while the grain size of ZnO–Bi₂O₃-based varistor reduced. The results demonstrated that at the same sintering temperature, the second particles increased with the increasing amount of Sb₂O₃, which was helpful to control the grain growth, leading to a higher breakdown voltage. However, the decrease of α-Bi₂O₃ phase (melting point of α-Bi₂O₃ phase is 825 °C), which is the main component of the liquid Bi₂O₃ phase in the sample during sintering process, leads to the increase of the sintering temperature of the green pallet. As a result, the ZnO varistor doped with 3.0 mol% Sb₂O₃ sintered at 1000 °C exhibited the highest breakdown voltage of 1863.3 V/mm. By contrast, the ZnO varistor without Sb₂O₃ doping sintered at 900 °C had the optimum nonlinear coefficient of 59.8.     

Effect of MnO2 addition on microstructure and electrical properties of ZnO–V2O5-based varistor ceramics

The microstructure and electrical properties of ternary system ZnO–0.5 mol% V₂O₅–MnO₂ ceramics sintered were investigated in accordance with MnO₂ content by sintering at 900 °C. For all samples, the microstructure of the ternary system ZnO–V₂O₅–MnO₂ ceramics consisted of mainly ZnO grain and secondary phase Zn₃(VO₄)₂. The incorporation of MnO₂ to the binary system ZnO–V₂O₅ ceramics was found to restrict the abnormal grain growth of ZnO. The breakdown field in the E–J characteristics increased from 175 to 992 V/cm with the increase of MnO₂ content. The incorporation of MnO₂ improved non-ohmic properties by increasing non-ohmic coefficient. The highest non-ohmic coefficient (27.2) in the ternary system ZnO–0.5 mol% V₂O₅–MnO₂ was obtained for MnO₂ content of 2.0 mol%.     

The characteristics of ZnO–Bi2O3-based varistor ceramics doped with Y2O3 and varying amounts of Sb2O3

ZnO–Bi₂O₃-based varistor samples doped with 0.45 mol% of Y₂O₃ and varying amounts of Sb₂O₃ in the range from 1.8 to 0.0 mol% were fired at 1230 °C. Only in the samples co-doped with Sb₂O₃ did doping with Y₂O₃ resulted in the formation of a fine-grained Bi–Zn–Sb–Y–O phase (the Y₂O₃-containing phase) at the grain boundaries, which very effectively hinders the grain growth. Despite of a decrease in the amount of added Sb₂O₃ from 1.8 to 0.45 mol% and a significant decrease in the amount of spinel phase the samples had a similar ZnO grain size and a threshold voltage of 200 V/mm. The results confirmed that doping with Y₂O₃ is a very promising route for the production of fine-grained high-voltage ZnO–Bi₂O₃-based varistor ceramics, and determining the proper amounts of added Sb₂O₃ and Y₂O₃ is of great importance.     

Optical and structural properties of ZnO NPs and ZnO–Bi2O3 nanocomposites

Pure ZnO and ZnO–Bi₂O₃ nanocomposites with 5 wt% and 10 wt% of Bi₂O₃ content were synthesized using the co-precipitation method. Optical properties such as refractive index (n), extinction coefficient (k), bandgap (E_g), and Urbach energies, as well as the band structure, were determined by modeling the experimental transmittance and reflectance UV–Vis spectra. The deduced bandgap and Urbach energies for pure ZnO (3.758 eV) increase with the increase of the doping degree of Bi₂O₃ in ZnO–Bi₂O₃ nanocomposite films. X-ray diffraction and scanning electron microscopy (SEM) was used to study the structural and morphological properties of these nanocomposite films. Pure ZnO and nanocomposites with Bi₂O₃ exhibit crystalline domains with wurtzite hexagonal structures, and as the doping degree of Bi₂O₃ increases, the crystallite size decreases. Based on SEM micrographs, the ZnO nanoparticles (NPs) structure shows the presence of aggregation. Moreover, Bi₂O₃ NPs in the nanocomposite film led to the further aggregation in the form of large rods. The elemental and chemical properties of the nanocomposites were investigated using infrared and energy-dispersive X-ray spectroscopy. The charge transfer process in the studied system is between ZnO and Bi₂O₃ conduction bands. Density-functional theory (DFT) calculations were performed for ZnO, Bi₂O₃, and ZnO-Bi₂O₃ compounds to investigate structural, optical, and electronic properties, being in agreement with the experimental results.     

Influence of Li2O–B2O3–SiO2 glass on the sintering behavior and microwave dielectric properties of BaO–0.15ZnO–4TiO2 ceramics

This paper reports the investigation of the performance of Li₂O–B₂O₃–SiO₂ (LBS) glass as a sintering aid to lower the sintering temperature of BaO–0.15ZnO–4TiO₂ (BZT) ceramics, as well as the detailed study on the sintering behavior, phase evolution, microstructure and microwave dielectric properties of the resulting BZT ceramics. The addition of LBS glass significantly lowers the sintering temperature of the BZT ceramics from 1150 °C to 875–925 °C. Small amount of LBS glass promotes the densification of BZT ceramic and improves the dielectric properties. However, excessive LBS addition leads to the precipitation of glass phase and growth of abnormal grain, deteriorating the dielectric properties of the BZT ceramic. The BZT ceramic with 5 wt% LBS addition sintered at 900 °C shows excellent microwave dielectric properties: ε_r=27.88, Q×f=14,795 GHz.     

Effect of adding Y2O3 on structural and mechanical properties of Al2O3–ZrO2 ceramics

The effects of adding 1–8 wt% Y₂O₃ on phase formation and fracture toughness of Al₂O₃–xZrO₂–Y₂O₃(AZY) ceramics were studied. Phase formations of the samples were characterized by the X-ray diffraction (XRD) technique. It was found that the major phase was rhombohedral-Al₂O₃, while the minor phase consisted of the monoclinic-ZrO₂, tetragonal-ZrO₂ and monoclinic-Y₂O₃. It was found that Y₂O₃ contents did not clearly influence grain shape of AZY ceramics. The results obtained from the microhardness test could be used to evaluate the fracture toughness. It was found that the smaller grains had high fracture toughness. The maximum fracture toughness of 4.827 MPa m^1/2 was obtained from 4 wt% Y₂O₃. Refinement of lattice parameters using Rietveld analysis revealed the quantitative phases of AZY ceramics. This shows that under adding Y₂O₃ conditions the proportion of tetragonal-ZrO₂ phase plays an important role for the mechanical properties of AZY ceramics.     

Sintering behavior of Cr2O3–Al2O3 ceramics

We investigated the sintering behavior of Cr₂O₃–Al₂O₃ ceramic materials. In our observation of the isothermal shrinkage behavior of Cr₂O₃–Al₂O₃ ceramic, the activation energy of sintering reaction was measured to be 102 kJ/mol, that is, the near value of the activation energy of diffusion of Al ions in Al₂O₃ single crystal. Therefore the diffusion of cations is believed to control the sintering behavior of this material. With the addition of TiO₂, (the compound chosen to accelerate the diffusion of cations) to Cr₂O₃–Al₂O₃, the sintering behavior was accelerated.     

Ge-added TiO2–Ta2O5–CaCO3 varistor ceramics

The influence of doping with Ge on the nonlinear coefficient α and the breakdown electric field E_B of TiO₂–Ta₂O₅–CaCO₃ varistor ceramics was investigated. In this study, TiO₂–Ta₂O₅–CaCO₃ varistor ceramics added with Ge was successfully prepared using the traditional method of ball milling–molding–sintering. The electrical performance, including the nonlinear coefficient α, the breakdown electric field E_B, and the leakage current J_L, are tested using a varistor direct current parameter instrument. The average barrier height Φ_B of each sample is calculated using the relevant formula. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and scanning transmission electronic microscopy analyses demonstrated that Ge doping notably changed the microstructure of TiO₂–Ta₂O₅–CaCO₃ ceramics, thereby increasing α and decreasing E_B. When the doping contents of Ta₂O₅ and CaCO₃ were 0.2 and 0.4 mol%, respectively, the optimum doping content of 0.9 mol% Ge exhibited high α (10.2), low E_B (14.1 V mm⁻¹), and high Φ_B (0.95 eV). These results are superior to previous findings. In addition, Ge as sintering aid reduced the sintering temperature caused by the low melting point. The optimal sintering temperature was 1300 °C for the TiO₂–Ta₂O₅–CaCO₃ ceramics doped with Ge.     

Effect of different corundum sources on microstructure and properties of Al2O3–Cr2O3 refractories

Al₂O₃–Cr₂O₃ refractories are completely substitutional solid solutions and exhibit better corrosion and abrasion resistance. To enable the comprehensive utilization of it, the microstructure and properties of Al₂O₃–Cr₂O₃ samples with different corundum sources were investigated in this study. The starting sources of corundum sources included sintered tabular corundum, fused white corundum, or brown corundum with minor impurities of β-Al₂O₃ and TiO₂. The results of mechanical test showed that the introduction of white corundum deteriorates the physical structure, while brown corundum acts in an opposite manner. The optimum bonding strength of the Al₂O₃–Cr₂O₃ brick was reached by combining white and brown corundum, whereby rapid neck growth occurred via surface diffusion during solid-phase sintering.     

Structure,relaxation behaviors and nonlinear dielectric properties of BaTiO3–Bi(Ti0.5Mg0.5)O3 ceramics

(1−x)BaTiO₃–xBi(Mg_1/2Ti_1/2)O₃ (BT–BMT, x=0–0.2, abbreviated as BT–BMT100x) ceramics were prepared by using a solid state reaction process. Their crystal structure, microstructure, conduction behavior, dielectric and tunability properties were investigated. It is found that the tetragonal phase and a pseudocubic phase coexist for x≤0.15 and transform to a pseudocubic phase at x=0.20. With the incorporation of BMT, BT–BMT becomes more insulating. The activation energies of the conduction are respectively 1.15(1) and 1.54(1) eV for grain and grain boundary of BT–BMT20. Furthermore, an abnormal nonlinear dielectric tunable behavior is observed. The dielectric permittivity first slightly increases until reaching the threshold electric field, and then suddenly decreases. This abnormal nonlinear dielectric behavior is attributed to the synergetic effects of the clamped oxygen vacancies and excessive aggregation of Bi at the grain boundaries.     

Influence of the structure of MgO·nAl2O3 spinel lattices on transparent ceramics processing and properties

It is demonstrated that a complete elimination of pores on sintering is governed not only by the size of the ceramic powder particles and by the homogeneity of their mutual coordination but similarly strongly by the state of the crystal lattice: with different cation disorder at fixed stoichiometry (n = 1) the sintering temperatures may differ by as much as 200 °C at constant powder particle size and equal homogeneity of the green bodies. Additionally, the impact of stoichiometry was investigated over the range between n = 1 and n = 3 with retarded reactive sintering at moderately increased Al₂O₃ concentrations but promoted densification of alumina-rich compositions. Taking advantage of the observed effects, sintered spinel ceramics were derived by reactive sintering of undoped MgO/Al₂O₃ mixtures resulting in an in-line transmittance which equals spinel single crystals of similar composition from 200 nm wave length up to the IR range.     

Microstructure and electrical properties of ZnO–ZrO2–Bi2O3–M3O4 (MCo,Mn) varistors

Phase evolution, microstructure and the electrical properties of ZrO₂-added pyrochlore-free ZnO–Bi₂O₃–M₃O₄ (MCo, Mn) varistors have been studied as functions of ZrO₂ content up to 10 vol% and the sintering temperature between 900 and 1300 °C. Zirconia remained as intergranular second phase particles up to 1100 °C, which retarded densification and inhibited the grain growth of ZnO. At higher temperatures, on the contrary, ZrO₂ particles began to be entrapped in ZnO grains and irreversibly transform from monoclinic to stable cubic phase dissolving transition metal ions. The grain size of ZnO decreased with increasing ZrO₂ content, and increased with the increase of the sintering temperature. Accordingly breakdown voltage changed with both ZrO₂ content and the sintering temperature as was expected. Nonlinear coefficient (α) depended primarily on the sintering temperature: it increased to >40 up to 1000 °C, and significantly decreased to <30 at higher temperatures probably due to the volatilization of Bi₂O₃. While the specimens sintered at 1200 °C or above had relatively high leakage current (I_L) and large clamping ratio (C_R), those with ZrO₂ content of 0.5–5.0 vol% and sintered below 1200 °C revealed low I_L of ⩽20 μA/cm² and C_R well below 2.0. In spite that varistor characteristics of ZrO₂-added system could not match those of commercial ZnO varistors, its low temperature sinterability and ease of breakdown voltage control via ZrO₂ content without a serious loss of its figures of merit are worth noticing, particularly for multi-layered chip varistor (MLV) application.     

Effects of ZnO/Li2O codoping on microstructure and piezoelectric properties of low-temperature sintered PMN–PNN–PZT ceramics

Pb(Mg_1/3Nb_2/3)O₃–Pb(Ni_1/3Nb_2/3)O₃–Pb(Zr_1/2Ti_1/2)O₃ (designated as PMNT) piezoelectric ceramics codoping with Zn²⁺/Li⁺ were prepared and the effects of ZnO/Li₂O (Z/L) additive on microstructure, piezoelectric and dielectric properties were investigated. The results show that the pure perovskite phase is formed and the phase structure changes from tetragonal to rhombohedral with different Z/L weight ratios. The Curie temperature T_c, dielectric constant ?, electromechanical coupling factor k_p and piezoelectric constant d₃₃ decrease, whereas mechanical quality factor Q_m increases with Z/L weight ratio changing from 1:1 to 1:8. The optimized Z/L weight ratio is 1:1. It is revealed that k_p and d₃₃ first increase then decrease, whereas Q_m changes opposite with increasing content of Z/L additive. The PMNT ceramic with Z/L ratio 1:1 and the amount of 1 wt% has excellent piezoelectric properties: k_p = 0.60, d₃₃ = 397 pC/N, T_c = 251 °C, Q_m = 150, ? = 2628 and tan δ = 0.0296, when sintered at 960 °C. Finally, multilayer piezoelectric actuator is prepared using optimal composition by tape casting. The actuator shows the displacement characteristics of 3.3 μm under electric field 100 V/mm.     

Growth and optical properties of ZnO–In2O3 heterostructure nanowires

ZnO–In₂O₃ heterostructure nanowires were grown on a Si (111) substrate using the thermal evaporation method. Scanning electron microscopy results showed that the ZnO nanowires had spherical caps. The X-ray diffraction (XRD) pattern and energy-dispersive X-ray (EDX) spectrum indicated that these caps were In₂O₃. An analysis of the early growth process revealed that indium oxide might have played a self-catalytic role. Therefore, it was plausible that the vapor–liquid–solid mechanism (VLS) was responsible for the growth of the ZnO–In₂O₃ heterostructure nanowires. The optical properties of the products were characterized using a photoluminescence (PL) technique. The PL results for the ZnO–In₂O₃ heterostructure nanowires showed a strong peak in the ultraviolet region as a result of the near band emission and a negligible peak for the visible emissions that occurred as a result of the defects. Based on these PL results, it was found that the In₂O₃ nanostructures not only introduced the caps at the tips of the ZnO nanowires but also partially passivated the nanowire surfaces, leading to an improved near band edge emission and the suppression of the defect luminescence.     

Fabrication and characterization of La2O3–Fe2O3–Bi2O3 nanopowders: Effects of La2O3 addition on structure,optical, and radiation-absorption properties

In this study, we fabricated and characterized six new nanopowders representing variations of La₂O₃–Fe₂O₃–Bi₂O₃, i.e., 100Bi₂O₃, 30Fe₂O₃–70Bi₂O₃, 3La₂O₃–27Fe₂O₃–70Bi₂O₃, 7La₂O₃–23Fe₂O₃–70Bi₂O₃, 10La₂O₃–20Fe₂O₃–70Bi₂O₃, and 20La₂O₃–10Fe₂O₃–70Bi₂O₃ (represented by 100B, 30F70B, 3L27F70B, 10L20F70B, and 20L10F70B, respectively). These nanopowders were prepared by the microwave-assisted hydrothermal synthesis method. Saponin extract from soapnuts was used as the nanoparticle capping agent. The structural, optical, and gamma radiation characteristics were measured, calculated, and analysed, respectively. The chemical structures of the nanocomposites influenced their optical and radiation shielding characteristics. The optical bandgaps of the 100B, 30F70B, 3L27F70B, 7L23F70B, 10L20F70B, and 20L10F70B nanopowders were 3.16, 3.13, 3.43, 3.45, 3.46, and 3.58 eV, respectively. The ranges of the mass attenuation coefficients of the nanopowders were computed, using XCOM, to be 0.0412–5.1624, 0.0401–4.5406, 0.0401–4.5285, 0.0401–4.5129, 0.0401–0.5015, and 0.0400–4.4156 cm²/g, respectively, and the ranges of mass energy absorption coefficients were found to be 0.0232–1.7525, 0.0228–1.5484, 0.0228–1.5598, 0.0288–1.5746, 0.0228–1.5853, and 0.0227–1.6192 cm²/g, respectively, for photon energies in the range of 0.1–10 MeV. The order of the dose rate trend was as follows: 30F70B < L27F70B < 7L23F70B < 10L20F70B < 20L10F70B. Analysis of the photon interaction parameters showed that the synthesized nanopowders could function well as fillers in radiation-shielding matrices.