Dispersion of nano-sized yttria powder using triammonium citrate dispersant for the fabrication of transparent ceramics

In the present work, transparent Y₂O₃ ceramics were prepared via colloidal processing method from nano-sized Y₂O₃ powders. The effects of triammonium citrate (TAC) on the colloid stability of aqueous suspensions of nano-sized Y₂O₃ powders were studied. The surface properties of yttria powders were notably affected by the addition of TAC dispersant. The adsorption of TAC on the particle surface shifts the IEP to lower pH values and increases the absolute zeta potential in alkaline region. Rheological characterization of the investigated system revealed an optimal dispersant concentration of 1 wt%, which correlated well with the saturation adsorption of TAC on Y₂O₃ powder surfaces. The suspensions with solid loadings up to 35 vol% were achieved with further addition of Tetramethylammonium hydroxide (TMAH) into the dispersing system. The consolidated green bodies were treated by cold isostatic pressing to further increase the green density. Transparent Y₂O₃ ceramics were prepared after vacuum-sintering at 1700 °C for 5 h. The transmittances of the sample were 74.5% at 800 nm and 79.8% at 2000 nm, respectively.     

Spray-grown highly oriented antimony-doped tin dioxide transparent conducting films

Undoped and Sb-doped tin dioxide films of varying thickness with a remarkable crystallographic orientation in the [200] direction were grown by spray-pyrolysis from tin(II) chloride solutions. Films grown on silica-coated glass substrates were completely crystalline and showed a higher degree of orientation with respect to films that were grown on uncoated glass. The presence of the silica barrier was seen to have increased the degree of orientation and to have enhanced the resulting electrical properties. Transmission electron microscopy revealed that the silica layer may have played the crucial role of a nucleation layer. Moreover, the developed microstructures were correlated with the optical and electrical behaviour of the films. Dense conducting films with thicknesses between 280–450 nm and visible transmittances of 80-70 % showed resistivities of about 10⁻³ Ωcm.     

Lightwave irradiation-assisted low-temperature solution synthesis of indium-tin-oxide transparent conductive films

Transparent conductive oxide (TCO) films have important applications in many areas. Unfortunately, TCOs are usually fabricated using vacuum and high-temperature methods, preventing them from applications in low-cost flexible devices. In this paper, facile low-temperature sol-gel method is described that can be used to fabricate high-quality TCO films. This study uses lightwave (LW) irradiation (at ～280 °C) with indium-tin-oxide (ITO) as a typical example. Both structure and key properties of ITO films are investigated for different LW irradiation conditions. ITO can be formed via LW irradiation after a period as short as 5 min. Furthermore, it is found that LW irradiation can promote the formation of M ? O framework, effectively remove Cl impurities, and facilitate the elimination of hydroxyl oxygen defects - even at temperatures as low as ～280 °C. The optimal ITO films show excellent electronic properties, including low sheet-resistance (14.5 Ω·sq^?1) and high conductivity (1.7 × 10³ S cm^?1). Moreover, ITO films also show high transmittance (above 87%). Overall, our ITO films have a figure of merit (FOM) of 1.72 × 10^?2 Ω^?1, which is comparable to (or higher than) those of previous ITO films that were produced using conventional vacuum and high-temperature methods. Our LW irradiation method provides facile and effective approach to produce high-performance TCO films at remarkably low cost. This means these films could be used in affordable flexible large-area devices.     

Fabrication of high-quality flexible transparent conductive thin films with a Nb2O5/AgNWs/Nb2O5 sandwich structure

Different sandwich structures of flexible transparent conductive thin film (TCFs) composed of Nb₂O₅ layers and Ag nanowires (AgNWs) have been prepared onto flexible polyethylene terephthalate (PET) substrate at room temperature to develop an indium-free TCF. The AgNWs are synthesized by a modified polyol method and inserted into the Nb₂O₅ layers that are prepared by radio frequency magnetron sputtering. The optical and electrical properties can be modified by changing the number of spin-coating cycle of AgNW suspension. At optimized condition, we achieve a flexible Nb₂O₅/AgNWs/Nb₂O₅ sandwich thin film with a low sheet resistance of 9.61 Ω/square and a high optical transmittance of 84.3%. Meanwhile, the resistance remains nearly constant after 30 tape tests, suggesting a strong adhesion to the PET substrate. The sandwich thin films show high long-term stability to oxidation, humid heat, and chemicals compared with that of AgNW networks, which can be attributed to the effective covering of Nb₂O₅ layer on the AgNWs. In addition, the Nb₂O₅/AgNWs/Nb₂O₅ sandwich thin films show good stability after repeated bending. This Nb₂O₅/AgNWs/Nb₂O₅ sandwich thin film can therefore serve as a high-performance transparent conductive electrode for numerous flexible electronic devices.     

Facile synthesis of metal organic decomposition Al-doped ZnO ink for inkjet printing and fabrication of highly transparent conductive film

In this paper, a MOD (Metal organic decomposition) Al doped ZnO (AZO) ink was directly used for inkjet printing transparent and conductive AZO films. The ink was synthesized by using zinc acetate dihydrate and aluminum nitrate nonahydrate as precursor, 1,2-diaminopropane as a complexing agent, ethyl alcohol as solution, ethyl cellulose as addition agent. The thermal decomposition behavior of the MOD ink was investigated. The various MOD AZO inks were inkjet printed and heated at different temperatures for different times. The films were studied by X-ray diffraction, scanning electron microscopy, resistivity measurements and ultraviolet–visible spectroscopy. The results demonstrated that 0.2 M AZO (2 at%) film heated at 250 °C for 120 min showed highly preferential growth along the c-axis, uniform microstructure with a resistivity of 0.03 Ω cm and high transmittance more than 90% in the visible range of the spectrum with an optical band gap at 3.326 eV.     

Ga and Ti co-doped In2O3 films for flexible amorphous transparent conducting oxides

We designed Ga and Ti co-doped In₂O₃ (IGTO) films to use as a flexible and transparent amorphous conducting oxide electrode in thin film heaters (TFHs) and flexible touch screen panels (FTSPs) for automobiles. The properties of the IGTO electrodes deposited on cyclic olefin copolymer (COP) at room temperature were investigated as a function of the O₂/(Ar + O₂) flow ratio, to confirm the best sputtering condition for transparent and flexible electrode. Depending on the oxygen flow ratio, the IGTO/COP electrodes showed sheet resistance of (39.3 – 1.57) × 10⁴ Ohm/sq, an average transmittance of (84.90 – 87.12) % at visible wavelength area, and a surface roughness of (0.95 – 3.23) nm. In addition, IGTO/COP samples exhibited good mechanical flexibility with critical bending radius of 3 mm, which is enough to be used as FTSPs. From the previously mentioned results, we found the amorphous IGTO/COP to be a promising flexible and transparent electrode for curved TFHs and FTSPs. The flexible IGTO/COP TFHs demonstrated a saturated temperature of 78.6 °C when applied with low operating direct current (DC) of 8 V, due to its low sheet resistance. In addition, the IGTO/COP FTSPs showed very stable touch sensitivity, even at a bent state. We found that the optimized IGTO/COP is a promising flexible and transparent electrode for next-generation automobiles.     

Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering

Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al₂O₃ (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (E_g) of the AZO films was increased with increasing the NIR energy efficiency.     

Poly(N-isopropylacrylamide) assisted microwave synthesis of magnesium aluminate spinel oxide for production of highly transparent films by hot compression

Magnesium aluminate spinel oxides have been prepared via poly(N-isopropylacrylamide) assisted microwave technique. The prepared MgAl₂O₄ powders showed a crystalline cubic structure with spinel phase after calcination at 600 °C only. The poly(N-isopropylacrylamide) amount showed a high effect on the crystallite size and the densification behavior of MgAl₂O₄. The increase of the amount of poly(N-isopropylacrylamide) reduced the sintering temperature of MgAl₂O₄ from 1400 °C to 1050 °C. The hot-pressed of MgAl₂O₄ powders in the presence of 3 wt% of poly(N-isopropylacrylamide) exhibited a full density at sintering temperature 1100 °C in 15 min only. The sintered films showed high transparency (81 ± 2%) in the wavelength range 500–1000 nm.     

Syntheses and characterization of highly transparent ZnAl2O4 ceramic films using poly(acrylamide-co-acrylic acid) assisted microwave approach

Zinc aluminate nanopowders were synthesized via poly(acrylamide-co-acrylic acid) assisted microwave approach. The as-synthesized ZnAl₂O₄ nanopowders were characterized using X-ray diffraction (XRD), High resolution transmission electron microscopy (HRTEM) and selected area of electron diffraction (SAED). The prepared ZnAl₂O₄ nanopowders exhibited a spinel cubic polycrystalline structure. The increase of poly(acrylamide-co-acrylic acid) amounts decreased the particle size of the ZnAl₂O₄ nanopowders. The poly(acrylamide-co-acrylic acid) enhanced the densification rate of ZnAl₂O₄. The increasing of poly(acrylamide-co-acrylic acid) amount decreased the sintering temperature from 1300 °C to 950 °C. The hot-compressed ZnAl₂O₄ nanopowders in the existence of 2 wt% of poly(acrylamide-co-acrylic acid) exhibited full density at 950?C in just 20 min. The ZnAl₂O₄ ceramic films revealed a high transparency of 83 ± 1% at a wavelength range from 450?1200 nm.     

Rapid thermal annealing effect of transparent ITO source and drain electrode for transparent thin film transistors

We investigated the rapid thermal annealing (RTA) sequence effect on the electrical, optical, morphological, and structural properties of transparent thin film transistors (TTFTs) with an indium gallium zinc oxide (IGZO) channel and an indium tin oxide (ITO) source/drain. The electrical and optical properties of the IGZO channel and the ITO source/drain electrodes were compared as a function of RTA temperature in ambient air. The performance of a TTFT with only an RTA-processed IGZO channel was compared with that of a TTFT with an RTA-processed IGZO channel and ITO source/drain electrodes. Using the circular transmission line measurement (CTLM) method, we suggest a possible mechanism that explains the effect of the RTA process on the performance of the TTFT with only an annealed IGZO channel vs. that with an annealed IGZO/ITO multilayer. The TTFT with an RTA-processed IGZO/ITO multilayer showed a threshold voltage shift, an improved on/off ratio of 3.54 × 10¹¹, a subthreshold swing of 0.33 V/decade, and a high mobility of 8.69 cm²/V·s. This indicates that simultaneous RTA processing for an IGZO channel and an ITO electrode is beneficial for the fabrication of high-performance TTFTs.     

Effects of Ga substitution for Al on the fabrication and optical properties of transparent Ce:GAGG-based ceramics

Ce³⁺-doped Gd₃(Al_1-xGa_x)₅O₁₂ (Ce:GAGG) transparent ceramics were successfully prepared via a solid state reaction/oxygen sintering method. The effects of Ga substitution on the structure and optical properties of the ceramics were investigated. The highest quantum yield and relatively high scintillation light yield were achieved in the Gd₃(Al_0.6Ga_0.4)₅O₁₂. The investigated processing technique demonstrated advantages such as increased flexibility and short processing time, thus being very cost effective. The investigated approach provides a much more economical alternative to the conventional melt growth processes used to fabricate single crystals.     

A novel approach of synthesizing nano Y2O3 powders for the fabrication of submicron IR transparent ceramics

A facile methodology of synthesizing highly reactive, round-edged, Sulfur–free nano Y₂O₃ powders to fabricate submicron IR transparent yttria ceramics having a unique combination of superior optical and mechanical properties are reported for the first time. Dispersion of yttrium hydroxide into aqueous sol and addition of seed particles produced near-spherical yttria powders having non – aggregated particles with narrow size distribution. The powder exhibited excellent sinterability reaching near-theoretical density at temperatures around 1400 °C in air. Effective inter-particle coordination and traces of Al additives assisted achieving superior densification. Sintered specimens showed average grain sizes closer to 700 nm. Post-sinter hot isostatic pressing eliminated the residual porosity from the sintered samples leading to exhibit IR transmissions up to 84% in the 2.0–9.0 μm regions, equivalent to single crystal Y₂O₃. Achieving densification through solid-state sintering and retaining the sintered grain sizes in the submicron regions significantly enhanced the mechanical properties. Sintered and HIPed Y₂O₃ specimens were further characterized for their thermal properties at temperature regions between ambient to 950 °C.     

Ag mesh network framework based nano composite for transparent conductive functional electrodes for capacitive touch sensor and thin film heater

We report on the development of a highly conductive, transparent and flexible Ag mesh-like network covered by an ITO/PEDOT:PSS nanocomposite for flexible conductive electronics. The electrode was deposited completely via solution-based deposition. A lower R_s value, from 7.21 Ω/□ to 5.05 Ω/□, was achieved by annealing the substrate via low-temperature plasma annealing. The low-temperature annealing was used to achieve crystallinity of the materials without deformation and degradation of PEDOT:PSS and the PET substrate. The low-cost deposition-based Ag NW-ITO/PEDOT:PSS electrode substantially decreased sheet resistance and provides the transmittance of 85.17%. The chemical stability and mechanical stability of the product were examined, and morphological studies were performed; in all of these, the substrate exhibited excellent behavior. Finally, a transparent flexible electrical heater and capacitive touch screen panel were fabricated using the Ag NW-ITO/PEDOT:PSS electrode to demonstrate the performance of the electrode and its potential applications.     

Synthesis of Fe:ZnSe nanopowders via the co-precipitation method for processing transparent ceramics

Fe:ZnSe nanopowders were synthesized via the co-precipitation method for fabricating transparent ceramics. Fe_xZn_1−xSe (0.00 ≤ x ≤ 0.06) powders that were calcined at 400°C yielded a single-phased cubic ZnSe, but when the calcination temperature was raised to 500-600°C, ZnO phase was created. Introduction of pressure could avoid appearance of ZnO. XRD Scherrer analysis revealed a monotonic increase in lattice parameter with increasing Fe²⁺ content. The average powder particle size increased with calcination temperature from several nanometers at 80°C to hundreds of nanometers at 600°C. Attempts to pressurelessly sinter ZnSe powders resulted in the partial decomposition of ZnSe, thus spark plasma sintering was employed to sinter Fe_0.01Zn_0.99Se transparent ceramics with pure ZnSe phase composition, which could be well sintered at 950°C for 30 minutes under an applied pressure of 60 MPa. SEM observations of the polished and thermally etched microstructure of the ceramic revealed a dense microstructure with average grain size of approximately 35 μm, and a few micropores were observed at the grain boundaries. The transparent ceramic exhibited good transmittance in the mid-far infrared range, with the highest transmittance 57% at 12 μm. This paper confirmed the scheme of synthesis of Fe:ZnSe nanopowders by liquid-phase co-precipitation method for sintering transparent ceramics.     

Influence of Ag incorporation on the structural,optical and electrical properties of ITO/Ag/ITO multilayers for inorganic all-solid-state electrochromic devices

Indium tin oxide/silver/indium tin oxide (ITO/Ag/ITO, IAI) multilayer structures were prepared by DC magnetron sputtering as a conductive transparent electrode for inorganic all-solid-state electrochromic devices. A thin layer of silver (Ag) with various thicknesses was inserted between two layers of ITO films. The XRD and SEM results revealed that the microscopic morphology of Ag film was closely related to the thickness. Besides, the electrical and optical properties of the IAI multilayers were significantly influenced by the Ag layer thickness. The optimized IAI multilayers demonstrated the best combination of electrical and optical properties with a figure of merit of 54.05 (sheet resistance of 6.14 Ω/cm²and optical transmittance of 90.83%) when the Ag film was 10 nm thick. In order to evaluate the IAI multilayers as a transparent electrode for electrochromic applications, two ECDs with the structures of ITO/NiO_x/LiPON/WO₃/ITO and ITO/NiO_x/LiPON/WO₃/IAI were prepared, and their electro-optical properties were characterized by cyclic voltammetry (CV), chronoamperometry (CA) and spectroscopic measurements. Compared with ECD the pure ITO top electrode (ITO/NiO_x/LiPON/WO₃/ITO), the ECD with the IAI top electrode (ITO/NiO_x/LiPON/WO₃/IAI) presented a slightly smaller optical modulation amplitude, but a faster switching speed. All our findings indicate that the IAI multilayer structure is a promising alternative to the ITO thin film for inorganic all-solid state electrochromic applications.     

Conductive and transparent multilayer films for low-temperature TiO2/Ag/SiO2 electrodes by E-beam evaporation with IAD

Conductive and transparent multilayer thin films consisting of three alternating layers (TiO₂/Ag/SiO₂, TAS) have been fabricated for applications as transparent conducting oxides. Metal oxide and metal layers were prepared by electron-beam evaporation with ion-assisted deposition, and the optical and electrical properties of the resulting films as well as their energy bounding characteristics and microstructures were carefully investigated. The optical properties of the obtained TAS material were compared with those of well-known transparent metal oxide glasses such as ZnO/Ag/ZnO, TiO₂/Ag/TiO₂, ZnO/Cu/ZnO, and ZnO/Al/ZnO. The weathering resistance of the TAS film was improved by using a protective SiO₂ film as the uppermost layer. The transmittance spectra and sheet resistance of the material were carefully measured and analyzed as a function of the layer thickness. By properly adjusting the thickness of the metal and dielectric films, a low sheet resistance of 6.5 ohm/sq and a high average transmittance of over 89% in the 400 to 700 nm wavelength regions were achieved. We found that the Ag layer played a significant role in determining the optical and electrical properties of this film.     

Influence of Yb and Si on the fabrication of Yb:YAG transparent ceramics using spherical Y2O3 powders

Yb:YAG (yttrium aluminum garnet) transparent ceramics were fabricated by the solid-state method using monodispersed spherical Y₂O₃ powders as well as commercial Al₂O₃ and Yb₂O₃ powders. Pure YAG phase was obtained at low temperature due to homogeneous mixing of powders. Under the same sintering conditions, the Yb:YAG ceramics with different doping contents of Yb³⁺ had similar morphologies and densification rates. After being sintered at 1700 °C in vacuum, the ceramic samples had high transparencies. The Yb:YAG ceramics doped with 0.5 wt% SiO₂ formed Y–Si–O liquid phase and nonstoichiometric point defects that enhanced sintering. Compared with Nd doping, Yb doping hardly affected the YAG grain growth, sintering densification or optical transmittance, probably because Yb³⁺ easily entered the YAG lattice and had a high segregation coefficient.     

The phase,microstructure evolution and the Nd3+ function in the fabrication process of LuAG transparent ceramics

Nd:LuAG transparent ceramics were fabricated by the solid-state reaction under vacuum sintering using SiO₂ and MgO as sintering aids, commercial Lu₂O₃, Al₂O₃ and Nd₂O₃ as raw materials. The Nd doping concentration was adopted from 0 at. % to 1.3 at. %. The phase transformation and microstructure evolution of 1.3 at. % Nd:LuAG ceramics under different sintering temperature was investigated in detail. Meanwhile, the effects of Nd₂O₃ on the grain growth were surveyed. The results shown that when the samples were sintered at 1780?°C, the 1.3 at. % Nd:LuAG ceramic had clean gain boundary, and the transmittance of it reached 83.8% at 1064?nm.