Microstructure and mechanical properties of tantalum carbide ceramics: Effects of Si3N4 as sintering aid

Stoichiometric Tantalum carbide (TaC) ceramics were prepared by reaction spark plasma sintering using 0.333–2.50 mol% Si₃N₄ as sintering aid. Effects of the Si₃N₄ addition on densification, microstructure and mechanical properties of the TaC ceramics were investigated. Si₃N₄ reacted with TaC and tantalum oxides such as Ta₂O₅ to form a small concentration of tantalum silicides, SiC and SiO₂, with significant decrease in oxygen content in the consolidated TaC ceramics. Dense TaC ceramics having relative densities >97% could be obtained at 0.667% Si₃N₄ addition and above. Average grain size in the consolidated TaC ceramics decreased from 11 µm at 0.333 mol% Si₃N₄ to 4 µm at 2.50 mol% Si₃N₄ addition. The Young's modulus, Vickers hardness and flexural strength at room temperature of the TaC ceramic with 2.50 mol% Si₃N₄ addition was 508 GPa, 15.5 GPa and 605 MPa, respectively. A slight decrease in bending strength was observed at 1200 °C due to oxidation of the samples.     

Densification,microstructure and mechanical properties of hot pressed tantalum carbide

Monolithic tantalum carbide (TaC) ceramics were prepared by hot pressing in order to investigate the effect of hot pressing temperature on the densification behavior, microstructure and mechanical properties of TaC. Monolithic TaC sample hot pressed at 2000 °C for 45 min under 40 MPa, with relative density value above 97%, Vickers hardness of 15.7 GPa and fracture toughness of 4.1 MPa m^1/2 was obtained. Fracture surfaces investigations of the samples, which were carried out using the SEM analysis, showed a significant grain growth by increasing the hot pressing temperature from 1700 to 2000 °C. Also, based on the X-ray diffraction pattern, a decrease in the lattice parameter of hot pressed TaC sample was observed.     

Oxidation resistance of tantalum carbide-hafnium carbide solid solutions under the extreme conditions of a plasma jet

The oxidation behaviors of tantalum carbide (TaC)- hafnium carbide (HfC) solid solutions with five different compositions, pure HfC, HfC-20 vol% TaC (T20H80), HfC- 50 vol% TaC (T50H50), HfC- 80 vol% TaC (T80H20), and pure TaC have been investigated by exposing to a plasma torch which has a temperature of approximately 2800 °C with a gas flow speed greater than 300 m/s for 60 s, 180 s, and 300 s, respectively. The solid solution samples showed significantly improved oxidation resistance compared to the pure carbide samples, and the T50H50 samples exhibited the best oxidation resistance of all samples. The thickness of the oxide scales in T50H50 was reduced more than 90% compared to the pure TaC samples, and more than 85% compared to the pure HfC samples after 300 s oxidation tests. A new Ta₂Hf₆O₁₇ phase was found to be responsible for the improved oxidation performance exhibited by solid solutions. The oxide scale constitutes of a scaffold-like structure consisting of HfO₂ and Ta₂Hf₆O₁₇ filled with Ta₂O₅ which was beneficial to the oxidation resistance by limiting the availability of oxygen.     

Pressureless sintering of single-phase tantalum carbide and niobium carbide

This work presents the results of studies on the preparation of single-phase polycrystalline tantalum carbide and niobium carbide. It has been found that it is possible to obtain polycrystals with high density in the pressureless sintering process at temperatures up to 2000 °C and therefore relatively low temperatures such as for the compounds with one of the highest melting points; TaC – 3985 °C and NbC – 3600 °C. Only carbon as a sintering additive was used. The main role of carbon is to reduce of oxide contamination. It has been shown that the determination of the amount of carbon required to reduce oxide contamination is only possible through the experimental method.     

Active filler controlled polymer pyrolysis – A promising route for the fabrication of advanced ceramics

A novel polyborosiloxane (BoSiVi) containing methyl and vinyl groups with Titanium Silicide (TiSi₂) filler was employed for the preparation of silicon and titanium containing ceramic phases. Ceramic phase evolution was studied from the above mentioned preceramic system at 900, 1200, 1500, 1800 and 2000 °C respectively under argon atmosphere. Reactive nature of TiSi₂ with pyrolytic by-products of BoSiVi led to the formation of different ceramic phases at different firing temperatures. XRD analysis confirmed the evolution of carbide (TiC, TiB, SiC etc.) and oxide (TiOC, SiO₂ etc.) ceramic phases in the temperature regime of 900 °C to 1500 °C. FESEM-EDX analysis of the ceramic phases, heat treated at 1500 °C, proved the formation of Si-Ti-O-C ceramic nano-fibers by Vapor-Liquid-Solid (VLS) method. BoSiVi+TiSi₂ system heat treated at 1800 °C and 2000 °C exhibited the evolution of pure non-oxide ceramic phases along with Ti₃SiC₂ MAX phase.     

Spark plasma sintering and high-temperature strength of B6O–TaB2 ceramics

Tantalum diboride – boron suboxide ceramic composites were densified by spark plasma sintering at 1900 °C. Strength and fracture toughness of these bulk composites at room temperature were 490 MPa and 4 MPa m^1/2, respectively. Flexural strength of B₆O–TaB₂ ceramics increased up to 800 °C and remained unchanged up to 1600 °C. At 1800 °C a rapid decrease in strength down to 300 MPa was observed and was accompanied by change in fracture mechanisms suggestive of decomposition of boron suboxide grains. Fracture toughness of B₆O–TaB₂ composites showed a minimum at 800 °C, suggestive a relaxation of thermal stresses generated from the mismatch in coefficients of thermal expansion.Flexural strength at elevated temperatures for bulk TaB₂ reference sample was also investigated.Results suggest that formation of composite provides additional strengthening/toughening as in all cases flexural strength and fracture toughness of the B₆O–TaB₂ ceramic composite was higher than that reported for B₆O monoliths.     

Synthesis,processing and properties of TaC–TaB2–C ceramics

Multi-phase ceramics in the TaC–TaB₂–C system were prepared from TaC and B₄C mixtures by reactive pressureless sintering at 1700–1900 °C. The pressureless densification was promoted by the use of nano-TaC and by the presence of active carbon in the reaction products. The presence of TaB₂ inhibited grain growth of TaC and increased the hardness compared to pure TaC. If a coarse TaC powder was used, the compositions did not densify. In contrast, pure nano-TaC was pressureless sintered at 1800 °C by the addition of 2 wt.% carbon introduced as carbon black or graphite. The introduction of carbon black resulted in fully dense TaC ceramics at temperatures as low as 1500 °C. The grain size of nominally pure TaC ceramics was a strong function of carbon stoichiometry. Enhanced grain size in sub-stoichiometric TaC, compared to stoichiometric TaC, was observed. Additional work is necessary to optimize processing parameters and evaluate the properties of ceramics in the TaC–TaB₂–C system.     

Microstructural characterization of spark plasma sintered boron carbide ceramics

Fully dense boron carbide specimens were fabricated by the spark plasma sintering (SPS) technology in the absence of any sintering additives. Densification starts at 1500 °C and the highest densification rate is reached at about 1900 °C. The microstructure of the ceramic sintered at 2200 °C, with heating rates in the 50–400 °C/min range, displays abnormal grain growth, while for a 600 °C/min heating rate a homogeneous distribution of finely equiaxed grains with 4.05 ± 1.62 μm average size was obtained. TEM analysis revealed the presence of W-based amorphous and of crystalline boron-rich B₅₀N₂ secondary phases at triple-junctions. No grain-boundary films were detected by HRTEM. The formation of a transient liquid alumino-silicate phase stands apparently behind the early stage of densification.     

Microstructure and mechanical properties of the spark plasma sintered Ta2C ceramics

Single phase hexagonal α-Ta₂C ceramics were synthesized by spark plasma sintering and using TaC and Ta as the starting powders. Effects of sintering temperatures and holding times on the densification process, phase formation, microstructure development, and mechanical properties of the α-Ta₂C ceramics were investigated. Densification occurred in the temperature range of 1520–1675 °C in less than 2.5 min. But completion of the Ta₂C formation took about 40 min at 1500 °C, and 5 min at 1900 °C. The materials sintered at 1500 °C consisted of fine equiaxed grains. The Ta₂C grains grew anisotropic to form an elongated self-toughening microstructure at 1700 °C. At 1900 °C, the neighboring Ta₂C individual crystals coalesced to form large Ta₂C blocks to entrap the residual pores. Although higher flexural strength and fracture toughness were reached at 1700 °C, the unstable microstructures of the Ta₂C materials indicated limited applications at high temperatures.     

Microstructure and mechanical properties of the spark plasma sintered TaC/SiC composites: Effects of sintering temperatures

TaC/SiC composites with 20 vol.% SiC addition were densified by spark plasma sintering at 1600–1900 °C for 5 min under 40 MPa. Effects of sintering temperatures on the densification, microstructures and mechanical properties of composites were investigated. The results showed the materials achieved >98% of theoretical density at a temperature as low as 1600 °C. While the TaC grains grew slightly with the sintering temperature increasing, the SiC particles in materials decreased in size. Equiaxed to elongated grain morphology transformation was observed in the SiC phase in the 1900 °C material to obtain a higher flexural strength and fracture toughness of 715 MPa and 6.7 MPa m^1/2, respectively. Lattice enlargement of the TaC phase in the 1900 °C material suggested possible Si diffusion into TaC grains. Ta was also detected in SiC grains by energy dispersive spectroscopy. Glassy pockets present at multi-grain junctions explained the enhanced densification.     

Spark plasma sintering of HfB2 with low additions of silicides of molybdenum and tantalum

HfB₂-based composites containing 3 vol% silicides of molybdenum or tantalum as sintering additives are densified by spark plasma sintering at 1900–2000 °C. Mechanical properties are measured up to 1500 °C in air. 4-pt Flexural strength values at 1500 °C are 480 MPa (64% of the RT value) for the MoSi₂-doped composite and 290 MPa (49% of the RT value) for the TaSi₂-doped composite. The fracture toughness is insensitive to the temperature change and reaches 5 MPa m^1/2 for the TaSi₂-doped ceramic.     

Microwave dielectric properties of Pb2MoO5 ceramic with ultra-low sintering temperature

Ultra-low firing microwave dielectric ceramic Pb₂MoO₅ with monoclinic structure was prepared via a conventional solid state reaction method. The sintering temperature ranged from 530 °C to 650 °C. The relative densities of the ceramic samples were about 97% when the sintering temperature was greater than 570 °C. The best microwave dielectric properties were obtained in the ceramic sintered at 610 °C for 2 h with a permittivity ∼19.1, a Q × f value about 21,960 GHz (at 7.461 GHz) and a temperature coefficient value of −60 ppm/°C. From the X-ray diffraction, backscattered electron image results of the co-fired samples with 30 wt% silver and aluminum additive, the Pb₂MoO₅ ceramics were found not to react with Ag and Al at 610 °C for 4 h. The microwave dielectric properties and ultra-low sintering temperature of Pb₂MoO₅ ceramic make it a promising candidate for low temperature co-fired ceramic applications.     

Pressureless sintering and properties of boron carbide composite materials

Boron carbide and Tantalum boride composites were prepared by pressureless sintering of B₄C with addition of TaC powder. The effect of TaC addition on the sinterability of boron carbide was studied. High densified ceramic with a relative density of 98.7% was obtained at sintering temperature of 2250°C. The composition and the microstructure of the dense composites are characterized by means of x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive x-ray spectroscopy (EDX). The studies show that the composites contain boron carbide, TaB₂, and carbon phases with a homogeneous structure. In addition, the correlation between the composition and the electrical conductivity was investigated. The electrical conductivity of the composite increased with increasing addition of TaC, and a change in conduction behavior from semiconducting to metallic was observed. High hardness value of 28.49 ± 1.33 GPa was obtained by the sample with 30 wt% TaC addition.     

Thermal conversion of carbon fibres/polysiloxane composites to carbon fibres/ceramic composites

The aim of this work is to investigate the thermal conversion of carbon fibres/polysiloxane composites to carbon fibres/ceramic composites. The conversion mechanism of four different resins to the ceramic phase in the presence of carbon fibres is investigated. The experiments were conducted in three temperature ranges, corresponding to composite manufacturing stages, namely up to 160 °C, 1000 °C and finally 1700 °C.The study reveals that the thermal conversion mechanism of pure resins in the presence of carbon fibres is similar to that without fibres up to 1000 °C. Above 1000 °C thermal decomposition occurs in both solid (composite matrix) and gas phases, and the presence of carbon fibres in resin matrix produces higher mass losses and higher porosity of the resulting composite samples in comparison to ceramic residue obtained from pure resin samples. XRD analysis shows that at temperature of 1700 °C composite matrices contain nanosized silicon carbide. SEM and EDS analyses indicate that due to the secondary decomposition of gaseous compounds released during pyrolysis a silicon carbide protective layer is created on the fibre surface and fibre–matrix interface. Moreover, nanosized silicon carbide filaments crystallize in composite pores.Owing to the presence of the protective silicon carbide layer created from the gas phase on the fibre–matrix interface, highly porous C/SiC composites show significantly high oxidation resistance.     

Microstructure and high-temperature strength of silicon carbide with 2000 ppm yttria

A dense silicon carbide (SiC) ceramic with a very high flexural strength at 2000 °C (981 ± 128 MPa) was obtained by conventional hot-pressing with extremely low additive content (2000 ppm Y₂O₃). Observations using high-resolution transmission electron microscopy (HRTEM) showed that (1) homophase (SiC/SiC) boundaries were clean without an intergranular glassy phase and (2) junction pockets consisted of nanocrystalline Y-containing phase embedded in an amorphous Y-Si-O-C-N phase. The excellent strength at 2000 °C was attributed to the clean SiC/SiC boundary and the strengthening effect of plastic deformation.     

Electrochemical deposition of tantalum carbide coatings in molten LiCl‐KCl‐K2CO3

A method for the preparation of tantalum carbide (TaC) coatings on tantalum by electrochemical reduction in carbonate ions in molten LiCl‐KCl was developed. Carbide coatings were obtained on the tantalum substrate at 900°C with a bias voltage of ?1.8 V versus the graphite counter electrode. The phase composition, morphology and strength of the carbide coating were characterized by XRD, SEM, and XPS analyses, as well as scratch testing. Kinetic mechanism for the formation of TaC coatings and evolution of chemical bonds between the carbide layer and substrate were schematically discussed. The coatings consist of a single phase of TaC with a thickness of approximately 5 μm. Ta₂O₅ and tantalate derivatives in molten salt restrict TaC formation. Electro‐deoxidation of Ta substrate can favorably eliminate tantalum‐involved compounds to produce TaC. TaC coatings improve the surface strength of Ta substrate obviously. The formation of a metal‐carbon solid solution in molten salt determines the existence of excess carbon on Ta substrate. Chemical bonds on the TaC coating were investigated in comparison with those at the interface of the metal‐oxygen‐carbon and carbon film.     

Thermal stability and mechanical properties of HVOF/PVD duplex ceramic coatings produced by HVOF and cathodic vacuum arc

Duplex ceramic coatings, consisting of an inner NiCr-Cr₃C₂-based coating and an outmost AlCrN film, were produced on the steel substrate in succession by velocity oxygen-fuel spraying (HVOF) and cathodic vacuum arc methods, and then isochronally annealed at annealing temperatures below 900 °C for 2 h. The thermal stability and mechanical properties of the annealed samples were systematically studied by means of X-ray diffraction, Optical microscope and transmission electron microscope, in association with mechanical property measurements. The results show that the microstructure, phase evolution and mechanical properties of duplex ceramic coatings are significantly dependent on the annealing temperature. Metastable fcc-AlCrN solid solution in AlCrN film first decomposes to rich-Al and rich-Cr domains by spinodal decomposition at 700 °C, leading to a notable increase in hardness due to its smaller grain size and high elastic strain field, and then to equiaxed hcp-AlN and Cr₂N by the nucleation and growth at 900 °C, leading to a notable decrease in hardness due to the recrystallization and the formation of hcp-AlN. Meanwhile, the both decarburization of Cr₃C₂ to Cr₇C₃ occurs at 800 °C, but becomes more intensive at 900 °C, leading to a notable loss in hardness. In addition, the dissolution of Cr₃C₂ produces high density of porosity, which also reduces the hardness. The hardness tests show the following ordering of load-bearing capacity for the duplex ceramic coatings: 700 °C>As-deposited >800 °C>900 °C. Tribological property measurements demonstrate that the wear resistance of the tested duplex ceramic coatings obeys the following ordering: 700 °C>As-deposited >800 °C>900 °C. The improved wear resistance is due to high surface hardness, load-bearing capacity and thermal stability. In addition, the wear mechanisms are shown.     

Wear mechanisms of TiN–TiB2 ceramic in sliding against alumina from room temperature to 700 °C

TiN–TiB₂ ceramic was prepared by the reactive hot-pressing method using titanium and BN powders as raw materials. The friction and wear properties of TiN–TiB₂ ceramic were evaluated in sliding against alumina ball from room temperature to 700 °C in air. The TiN–TiB₂ ceramic has a relative density of 98.6%, a flexural strength of 731.9 MPa and a fracture toughness of 8.5 MPa m^1/2 at room temperature. The TiN–TiB₂ ceramic exhibits a distinct decrease in friction coefficient at 700 °C as contrasted with the friction data obtained at room temperature and 400 °C. Wear mechanisms of TiN–TiB₂ ceramic depend mainly upon testing temperature at identical applied loads. Lubricious oxidized products caused by thermal oxidation provide excellent lubrication effects and greatly reduce the friction coefficient of TiN–TiB₂ ceramic at 700 °C. However, abrasive wear and tribo-oxidation are the dominant wear mechanisms of TiN–TiB₂ ceramic at 400 °C. Mechanical polishing effect and removal of micro-fractured grains play important roles during room-temperature wear tests.     

Influence of sintering environment on zirconia–metal carbides characteristics

TaC and TiC powders were added, respectively to a matrix of (CaO + MgO) totally stabilized zirconia and to a CeO₂ stabilized zirconia (PSZ) in order to produce composites by uniaxial pressing. The samples were sintered in vacuum at 1450 °C and in argon environment at 1800 °C, respectively. The purpose of present paper is to establish influence of the type of secondary phase on the mechanical properties of composites and to correlate the physical – mechanical and structural properties of composites with different matrices as function of the amount of secondary phase by varying the TiC and respectively TaC content in 5–30% weight range. Comparative microstructure investigations were made by SEM on sample surfaces. The X-ray diffraction analysis was in accordance with the determined properties of the studied compositions.     

Dielectric and magnetic properties of BiFeO3 ceramics prepared by hydrothermal synthesis

Single-phase BiFeO₃ powders were prepared at a temperature of 200 °C by a hydrothermal synthesis. BiFeO₃ ceramics were prepared with the powders by a conventional ceramic process. The BiFeO₃ ceramics with no impurity phase were prepared at the sintering temperature of 650–800 °C. The dense microstructure was observed in the BiFeO₃ ceramics sintered at a temperature of 700 °C and higher. BiFeO₃ ceramics show linear M–H curves in low H, which are antiferromagnetic behaviors. The dielectric dispersion was observed at the frequency range of 10 kHz to 1 MHz in the BiFeO₃ ceramic sintered at 700 °C or lower. The dielectric constant and loss of the BiFeO₃ ceramics sintered at 750 °C or higher were about 85 and 0.4 at 100 kHz, respectively.