Characterization of Cu(In,Ga)Se2 thin films prepared by RF magnetron sputtering using a single target without selenization

Cu(In_1?xGa_x)Se₂ (CIGS) thin films were prepared using a single quaternary target by RF magnetron sputtering. The effects of deposition parameters on the structural, compositional and electrical properties of the films were examined in order to develop the deposition process without post-deposition selenization. From X-ray diffraction analysis, as the substrate temperature and Ar pressure increased and RF power decreased, the crystallinity of the films improved. The scanning electron microscopy revealed that the grains became uniform and circular shape with columnar structure with increasing the substrate temperature and Ar pressure, and decreasing the RF power. The carrier concentration of CIGS films deposited at the substrate temperature of 500 °C was 2.1 × 10¹⁷ cm^?3 and the resistivity was 27 Ω cm. At the substrate temperature above 500 °C, In and Se contents in CIGS films decreased due to the evaporation and it led to the deterioration of crystallinity. It was confirmed that CIGS thin films deposited at optimal condition had similar atomic ratio to the target value even without post-deposition selenization process.     

Room-temperature UV-ozone assisted solution process for zirconium oxide films with high dielectric properties

A facile, low-cost, and room-temperature UV-ozone (UVO) assisted solution process was employed to prepare zirconium oxide (ZrO_x) films with high dielectric properties. ZrO_x films were deposited by a simple spin-coating of zirconium acetylacetonate (ZrAcAc) precursor in the environment-friendly solvent of ethanol. The smooth and amorphous ZrO_x films by UVO exhibit average visible transmittances over 90% and energy bandgap of 5.7 eV. Low leakage current of 6.0 × 10⁻⁸ A/cm² at 3 MV/cm and high dielectric constant of 13 (100 Hz) were achieved for ZrO_x dielectrics at the nearly room temperature. Moreover, a fully room-temperature solution-processed oxide thin films transistor (TFT) with UVO assisted ZrO_x dielectric films achieved acceptable performances, such as a low operating voltage of 3 V, high carrier mobility of 1.65 cm² V⁻¹ s⁻¹, and on/off current ratio about 10⁴–10⁵. Our work indicates that simple room-temperature UVO is highly potential for low-temperature, solution-processed and high-performance oxide films and devices.     

Highly conducting and transparent antimony doped tin oxide thin films: the role of sputtering power density

Sb doped SnO₂ thin films were deposited on quartz substrates by magnetron sputtering at 600 °C and the effects of sputtering power density on the preferential orientation, structural, surface morphological, optical and electrical properties had been studied. The XRD analyses confirm the formation of cassiterite tetragonal structure and the presence of preferential orientation in (2 1 1) direction for tin oxygen thin films. The dislocation density analyses reveal that the generated defects can be suppressed by the appropriate sputtering power density in the SnO₂ lattice. The studies of surface morphologies show that grain sizes and surface roughness are remarkably affected by the sputtering power density. The resistivity of Sb doped SnO₂ thin films gradually decreases as increasing the sputtering power density, reaches a minimum value of 8.23×10⁻⁴ Ω cm at 7.65/cm² and starts increasing thereafter. The possible mechanisms for the change in resistivity are proposed. The average transmittances are more than 83% in the visible region (380–780 nm) for all the thin films, the optical band gaps are above 4.1 eV. And the mechanisms of the variation of optical properties at different sputtering power densities are addressed.     

(001)-oriented Cu2-ySe thin films with tunable thermoelectric performances grown by pulsed laser deposition

Highly (001)-oriented Cu_2-ySe thin films with tunable thermoelectric performances have been grown by pulsed laser deposition. By using targets with different Cu/Se ratios that further determines the copper deficiency of as-grown films, the carrier concentrations of as-grown films are tuned within a broad range from 10¹⁸ to 10²¹ cm⁻³. The optimum performance is observed at carrier concentration ~1.58×10²⁰ cm⁻³. The distinct properties of Cu_2-ySe thin films with nearly ideal chemical stoichiometric ratio are observed. In addition, a weak change in the electrical transport during the second-order phase transition was observed in the thin films due to the anisotropic structure of the Cu_2-ySe.     

Growth and properties of Cu3SbS4 thin films prepared by a two-stage process for solar cell applications

Cu₃SbS₄ is a promising material for thin film heterojunction solar cells owing to its suitable optical and electrical properties. In this paper, we report the preparation of Cu₃SbS₄ thin films by annealing the Sb₂S₃/CuS stacks, produced by chemical bath deposition, in a graphite box held at different temperatures. The influence of annealing temperature on the growth and properties of these films is investigated. These films are systematically analyzed by evaluating their structural, microstructural, optical and electrical properties using suitable characterization techniques. X-ray diffraction analysis showed that these films exhibit tetragonal crystal structure with the lattice parameters a=0.537 nm and b=1.087 nm. Their crystallite size increases with increasing annealing temperature of the stacks. Raman spectroscopy analysis of these films exhibited modes at 132, 247, 273, 317, 344, 358 and 635 cm⁻¹ due to Cu₃SbS₄ phase. X-ray photoelectron spectroscopy analysis revealed that the films prepared by annealing the stack at 350 °C exhibit a Cu-poor and Sb-rich composition with +1, +5 and −2 oxidation states of Cu, Sb and S, respectively. Morphological studies showed an improvement in the grain size of the films on increasing the annealing temperature. The direct optical band gap of these films was in the range of 0.82–0.85 eV. Hall measurements showed that the films are p-type in nature and their electrical resistivity, hole mobility and hole concentration are in the ranges of 0.14–1.20 Ω-cm, 0.05–2.11 cm² V⁻¹ s⁻¹ and 9.4×10²⁰–1.4×10¹⁹ cm⁻³, respectively. These structural, morphological, optical and electrical properties suggest that Cu₃SbS₄ could be used as an absorber layer for bottom cell in multi-junction solar cells.     

Thermal,mechanical and electrical properties of hard B4C,BCN, ZrBC and ZrBCN ceramics

We study the thermal, mechanical and electrical properties of B₄C, BCN, ZrBC and ZrBCN ceramics prepared in the form of thin films by magnetron sputtering. We focus on the effect of Zr_x(B₄C)_1−x sputter target composition, the N₂+Ar discharge gas mixture composition, the deposition temperature and the annealing temperature after the deposition. The thermal properties of interest include thermal conductivity (observed in the range 1.3–7.3 W m⁻¹ K⁻¹), heat capacity (0.37–1.6×10³ J kg⁻¹ K⁻¹ or 1.9–4.1×10⁶ Jm⁻³ K⁻¹), thermal effusivity (1.6–4.5×10³ J m⁻² s^−1/2 K⁻¹) and thermal diffusivity (0.38–2.6×10⁻⁶ m² s⁻¹). We discuss the relationships between materials composition, preparation conditions, structure, thermal properties, temperature dependence of the thermal properties and other (mechanical and electrical) properties. We find that the materials structure (amorphous×crystalline hexagonal ZrB₂-like×nanocrystalline cubic ZrN-like), more than the composition, is the crucial factor determining the thermal conductivity and other properties. The results are particularly important for the design of future ceramic materials combining tailored thermal properties, mechanical properties, electrical conductivity and oxidation resistance.     

The effect of annealing on electrical properties of fluorinated amorphous carbon films

Fluorinated amorphous carbon (a–C:F) films have been deposited by electron cyclotron resonance chemical vapor deposition (ECR–CVD) at room temperature using C₄F₈ and CH₄ as precursor gases. The chemical compositions and electrical properties of a–C:F films have been studied by X-ray photoelectron spectroscopy (XPS), capacitance–voltage (C–V) and current-voltage (I–V) measurements. The results show that C–CF_x and C–C species of a–C:F films increase and fluorine content decreases after annealing. The dielectric constant of the annealed a–C:F films increases as a result of enhancement of film density and reduction of electronic polarization. The densities of fixed charges and interface states decrease from 1.6 × 10¹⁰ cm^− 2 and (5–9) × 10¹¹ eV^− 1 cm^− 2 to 3.2 × 10⁹ cm^− 2 and (4–6) × 10¹¹ eV^− 1 cm^− 2 respectively when a–C:F films are annealed at 300 °C. The magnitude of C–V hysteresis decreases due to reduced dangling bonds at the a–C:F/Si interfaces after heat treatment. The conduction of a–C:F films shows ohmic behavior at lower electric fields and is explained by Poole–Frankel (PF) mechanism at higher electric fields. The PF current increases indicative of reduced trap energy when a–C:F films are subjected to higher annealing temperatures.     

Structural,electrical and optical properties of molybdenum-doped TiO2 thin films

Molybdenum doped TiO₂ (MTO) thin films were prepared by radio frequency (RF) magnetron sputtering at room temperature and followed by a heat treatment in a reductive atmosphere containing 90% N₂ and 10% H₂. XRD and FESEM were employed to evaluate the microstructure of the MTO films, revealing that the addition of molybdenum enhances the crystallization and increases the grain size of TiO₂ films. The optimal electrical properties of the MTO films were obtained with 3 wt% Mo doping, producing a resistivity of 1.1×10^?3 Ω cm, a carrier density of 9.7×10²⁰ cm^?3 and a mobility of 5.9 cm²/Vs. The refractive index and extinction coefficient of MTO films were also measured as a function of film porosity. The optical band gap of the MTO films ranged from 3.28 to 3.36 eV, which is greater than that of the un-doped TiO₂ film. This blue shift of approximately 0.14 eV was attributed to the Burstein–Moss effect.     

Electrical contacts to nitrogen incorporated nanocrystalline diamond films

The effect of surface plasma treatment on the nature of the electrical contact to the nitrogen incorporated nanocrystalline diamond (n-NCD) films is reported. Nitrogen incorporated NCD films were grown in a microwave plasma enhanced chemical vapor deposition (MPECVD) reactor using CH₄ (1%)/N₂ (20%)/Ar (79%) gas chemistry. Raman spectra of the films showed features at ∼ 1140 cm^− 1, 1350 cm^− 1(D-band) and 1560 cm^− 1(G-band) respectively with changes in the bonding configuration of G-band after the plasma treatment. Electrical contacts to both untreated and surface plasma treated films are formed by sputtering and patterning Ti/Au metal electrodes. Ohmic nature of these contacts on the untreated films has changed to non-ohmic type after the hydrogen plasma treatment. The linear current–voltage characteristics could not be obtained even after annealing the contacts. The nature of the electrical contacts to these films depends on the surface conditions and the presence of defects and sp² carbon.     

Microstructure,optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films

The microstructure, optical and electrical properties of HfTiO high-k gate dielectric thin films deposited on Si substrate and quartz substrate by RF magnetron sputtering have been investigated. Based on analysis from x-ray diffraction (XRD) measurements, it has been found that the as-deposited HfTiO films remain amorphous regardless of the working gas pressure. Meanwhile, combined with characterization of ultraviolet-visible spectroscopy (UV–vis) and spectroscopy ellipsometry (SE), the deposition rate, band gap and optical properties of sputtered HfTiO gate dielectrics were determined. Besides, by means of the characteristic curves of high frequency capacitance–voltage (C–V) and leakage current density–voltage (J–V), the electrical parameters, such as permittivity, total positive charge density, border trap charge density, and leakage current density, have been obtained. The leakage current mechanisms are also discussed. The energy band gap of 3.70 eV, leakage current density of 1.39×10⁻⁵ A/cm² at bias voltage of 2 V, and total positive charge density and border trap charge density of 9.16×10¹¹ cm⁻² and 1.3×10¹¹ cm⁻², respectively render HfTiO thin films deposited at 0.6 Pa, potential high-k gate dielectrics in future CMOS devices.     

Annealing-temperature-modulated optical,electrical properties,and leakage current transport mechanism of sol–gel-processed high-k HfAlOx gate dielectrics

Deposition of HfAlO_x gate dielectric films on n-type Si and quartz substrates by sol-gel technique has been performed and the optical, electrical characteristics of the as-deposited HfAlO_x thin films as a function of annealing temperature have been investigated. The optical properties of HfAlO_x thin films related to annealing temperature are investigated by ultraviolet-visible spectroscopy (UV–vis) and spectroscopy ellipsometry (SE). By measurement of UV–vis, average transmission of all the HfAlO_x samples are about 85% owing to their uniform composition. And the increase in band gap has been observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on Al/Si/HfAlO_x/Al capacitor are analyzed by means of the high frequency capacitance-voltage (C-V) and the leakage current density-voltage (J-V) characteristics. Results have shown that 400 °C-annealed sample demonstrates good electrical performance, including larger dielectric constant of 12.93 and lower leakage current density of 3.75×10⁻⁷ A/cm² at the gate voltage of 1 V. Additionally, the leakage current conduction mechanisms as functions of annealing temperatures are also discussed systematically.     

Study of Cu-based Al-doped ZnO multilayer thin films with different annealing conditions

AZO/Cu/AZO multilayer thin films produced under different annealing conditions are studied in this paper, to examine the effects of atmosphere and annealing temperature on their optical and electrical properties. The multilayer thin films are prepared by simultaneous RF magnetron sputtering (for AZO) and DC magnetron sputtering (for Cu). The thin films were annealed in a vacuum or an atmosphere of oxygen at temperatures ranging from 100 to 400 °C in steps of 100 °C for 3 min. High-quality multilayer films (at Cu layer thickness of 15 nm) with resistivity of 1.99×10⁻⁵ Ω-cm and maximum optical transmittance of 76.23% were obtained at 400 °C annealing temperature in a vacuum. These results show the films to be good candidates for use as high quality electrodes in various displays applications.     

Effects of yttrium additions on the microstructure and charge transport properties of indium tin oxide semiconductors

The effects of yttrium (Y) additions (x=0, 0.05, 0.1, and 0.2) on the microstructure, chemical structure, and electrical properties of Y_xInSnO_y (YITO) thin films, prepared using a sol-gel process were examined. The transmission electron microscopy (TEM) observations showed that the undoped InSnO (ITO) film consisted of an amorphous structure with local crystalline domains on the film surface, whereas the Y additions (x=0.05, 0.1, and 0.2) to ITO suppressed the formation of the crystalline phase. X-ray photoelectron spectroscopy (XPS) analysis showed that the Y content decreased the concentration of oxygen vacancies owing to the strong incorporation of Y with oxygen. As a result of the Y incorporation, the carrier concentration of ITO films decreased. The saturation mobility (μ_sat), the on-off ratios (I_on/off), and the sub-threshold swing (S.S) of YITO films were 1.1 cm² V⁻¹ s⁻¹, ~10⁶, and ~0.5 V decade⁻¹, respectively, which are comparable with 1.7 cm² V⁻¹ s⁻¹, ~10⁵, and ~1.17 V decade⁻¹ of ITO film. Additionally, the initial threshold voltage (V_TH) was positive shift with increased of Y addition and V_TH shift (ΔV_TH) under the positive bias stress (PBS) results decreased by Y addition.     

Synthesis and characterisation of MnGaxCr2−xO4 (0.1≤x≤1) spinels as potential electrode support materials for intermediate-temperature solid oxide fuel cells

MnGa_xCr_2−xO₄ (MGCO, x=0.1, 0.2, 0.4, 0.8, 1) oxides are synthesised using a citric acid nitrate combustion method. The influence of Ga substitution on the structure, electrical conductivity and electrochemical performance are systematically investigated. The chemical and thermal compatibility of MGCO materials with yttrium-stabilised zirconia (YSZ) are also studied. All the samples exhibit a single phase spinel structure. Thermal expansion coefficients (TECs) of the MGCO oxides are in the range of 9–12×10⁻⁶ K⁻¹, indicating a good thermal match with the YSZ electrolyte. No chemical reactions are detected between MGCO materials and YSZ, indicating their good chemical compatibility with YSZ. The magnitude of electrical conductivity of all the obtained samples is in the order of about 10⁻³ S cm⁻¹at 800 °C measured in air. The polarisation resistance reaches a value as low as 5.2 Ω cm² for x=0.4 at 800 °C. The preliminary results demonstrate that MGCO materials could be used as electrode support materials for intermediate-temperature solid oxide fuel cells (IT-SOFCs).     

Fabrication of highly efficient TiO2/Ag/TiO2 multilayer transparent conducting electrode with N ion implantation for optoelectronic applications

Fabrication of highly conductive and transparent TiO₂/Ag/TiO₂ (referred hereafter as TAT) multilayer films with nitrogen implantation is reported. In the present work, TAT films were fabricated with a total thickness of 100 nm by sputtering on glass substrates at room temperature. The as-deposited films were implanted with 40 keV N ions for different fluences (1×10¹⁴, 5×10¹⁴, 1×10¹⁵, 5×10¹⁵ and 1×10¹⁶ ions/cm²). The objective of this study was to investigate the effect of N⁺ implantation on the optical and electrical properties of TAT multilayer films. X-ray diffraction of TAT films shows an amorphous TiO₂ film with a crystalline peak assigned to Ag (111) diffraction plane. The surface morphology studied by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) revealed smooth and uniform top layer of the sandwich structure. The surface roughness of pristine film was 1.7 nm which increases to 2.34 nm on implantation for 1×10¹⁴ ions/cm² fluence. Beyond this fluence, the roughness decreases. The oxide/metal/oxide structure exhibits an average transmittance ~80% for pristine and ~70% for the implanted film at fluence of 1×10¹⁶ ions/cm² in the visible region. The electrical resistivity of the pristine sample was obtained as 2.04×10⁻⁴ Ω cm which is minimized to 9.62×10⁻⁵ Ω cm at highest fluence. Sheet resistance of TAT films decreased from 20.4 to 9.62 Ω/□ with an increase in fluence. Electrical and optical parameters such as carrier concentration, carrier mobility, absorption coefficient, band gap, refractive index and extinction coefficient have been calculated for the pristine and implanted films to assess the performance of films. The TAT multilayer film with fluence of 1×10¹⁶ ions/cm² showed maximum Haacke figure of merit (FOM) of 5.7×10⁻³ Ω⁻¹. X-ray photoelectron spectroscopy (XPS) analysis of N 1s and Ti 2p spectra revealed that substitutional implantation of nitrogen into the TiO₂ lattice added new electronic states just above the valence band which is responsible for the narrowing of band gap resulting in the enhancement in electrical conductivity. This study reports that fabrication of multilayer transparent conducting electrode with nitrogen implantation that exhibits superior electrical and optical properties and hence can be an alternative to indium tin oxide (ITO) for futuristic TCE applications in optoelectronic devices.     

Preparation and characterization of transparent indium- doped TiO2 films deposited by MOCVD

Titanium dioxide (TiO₂) films doped with different indium (In) concentrations have been prepared on SrTiO₃ (STO) substrates by high vacuum metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) analyses revealed the TiO₂ films doped with low In concentrations to be [001] oriented anatase phase and the films with high In concentrations to present polycrystalline structures. The 1.8% In-doped TiO₂ film exhibited the best electrical conductivity properties with the lowest resistivity of 8.68×10⁻² Ω cm, a Hall mobility of 10.9 cm² V⁻¹ s⁻¹ and a carrier concentration of 6.5×10¹⁸ cm⁻³. The films showed excellent transparency with average transmittances of over 85% in the visible range.     

Effect of excess lead on the structural and electrical characteristics of sol-gel synthesized RuO2/Pb(ZrxTi1−x)O3/RuO2

In this study, we investigated the effect of excess lead on the structural and electrical characteristics of lead zirconate titanate [Pb(Zr_xTi_1−x)O₃, PZT] thin films using the sol-gel spin coating method. X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and field-emission transmission electron microscopy were used to study the structural, morphological, chemical, and microstructural features, respectively, of these films as functions of the growth conditions (excess lead concentrations of 10, 20, and 25 mol%). The PZT thin film prepared at the 20 mol% condition exhibited the best electrical characteristics including a lower leakage current of 6×10⁻⁷ A/cm² at an electric field of 50 kV/cm, a larger capacitance value of 1.92 μF/cm² at a frequency of 1 kHz, and a higher remanent polarization of 20.1 μC/cm² at a frequency of 5 kHz. We attribute this behavior to the optimal amount of excess lead in this PZT film forming a perovskite structure and suppressing the reaction of PZT film with RuO₂ electrode.     

Effect of excess Bi2O3 on structures and dielectric properties of Bi1.5Zn1.0Nb1.5O7 thin films deposited at room temperature by RF magnetron sputtering

To compensate for bismuth loss that occurred during the film deposition process, Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin films were deposited at room temperature from the ceramic targets containing various excess amounts of bismuth (0–20 mol%) on Pt/TiO₂/SiO₂/Si substrates by using RF magnetron sputtering technique. The effect of bismuth excess content on the microstructure and electrical properties of BZN thin films was studied. The microstructure and chemical states of the thin films were studied by SEM and XPS. EPMA was employed to assess the film stoichiometry. The X-ray diffraction analysis reveals that the BZN thin films exhibit the amorphous structure in nature. An appropriate amount of excess bismuth improves the dielectric and electrical properties of BZN thin films, while too much excess bismuth leads to deterioration of the properties. BZN thin film with 5 mol% excess bismuth exhibits a dielectric constant of 61 with a loss of 0.4% at 10 kHz and leakage current of 7.26×10^?7 A/cm² at an electric field of 200 kV/cm.     

Anode-supported SOFCs based on Sm0.2Ce0.8O2−δ electrolyte thin-films fabricated by co-pressing using microwave combustion synthesized powders

Decreasing the electrolyte thickness is an effective approach to improve solid oxide fuel cells (SOFCs) performance for intermediate-temperature applications. Sm_0.2Ce_0.8O_2−δ (SDC) powders with low apparent density of 32±0.3 mg cm⁻³ are synthesized by microwave combustion method, and SDC electrolyte films as thin as ~10 μm are fabricated by co-pressing the powders onto a porous NiO–SDC anode substrate. Dense SDC electrolyte thin films with grain size of 300–800 nm are achieved at a low co-firing temperature of 1200 °C. Single cells based on SDC thin films show peak power densities of 0.86 W cm⁻² at 650 °C using 3 vol% humidified H₂ as fuel and ambient air as oxidant. Both the thin thickness of electrolyte films and ultra-fine grained anode structure make contributions to the improved cell performance.     

Improving electrical conductivity and wear resistance of hafnium nitride films via tantalum incorporation

Transition metal nitrides are being widely applied, as durable sensors, semiconductor and superconductor devices, their electrical conductivity and wear resistance having a significant influence on these applications. However, there are few reports about how to improve above properties. In this paper, tantalum was incorporated into hafnium nitride films through Hf_1-xTa_xN_y [x=Ta/(Hf+Ta), y=N/(Hf+Ta)] solid solution. The electrical conductivity and wear resistance of the films were significantly improved, due to the increase of the electron concentration (tantalum has one more valence electron than hafnium) and the increase in H/E and H³/E² ratios caused by the effect of solid solution hardening, respectively. The highest electrical conductivity of Hf_1-xTa_xN_y films is 8.3×10⁵ S m⁻¹, which is 1.7 times and 5.2 times of that of hafnium nitride and tantalum nitride films, respectively. In addition, the lowest wear rate of films is 1.2×10⁻⁶ mm³/N m, which is only 10% and 48% of that of hafnium nitride and tantalum nitride films, respectively. These results indicate that alloying with another transition metal is an effective method to improve electrical conductivity and wear resistance of transition metal nitrides.