Micro-patterning of PZT thick film by lift-off using ZnO as a sacrificial layer

Micro-pattern of 8.2-μm-thick PZT films was prepared on Pt/Ti/SiO₂/Si (1 0 0) substrate wafer by combining composite sol–gel and a novel lift-off using ZnO as a sacrificial layer. The processes include ZnO sacrificial layer deposition and patterning, PZT film preparation, and final lift-off. The results reveal the micro-pattern was better than that formed by wet etching, the PZT thick films patterned by lift-off possessed similar dielectric characters, better ferroelectric properties, and higher breakdown voltage than those of films patterned by wet etching. The lift-off is suitable for micro-patterning of PZT thick films.     

The effects of deposition temperature on structure and dielectric properties of Ba0.6Sr0.4TiO3 thin films produced by pulsed laser deposition

The effects of deposition temperature on orientation, surface morphology and dielectric properties of the thin films for Ba_0.6Sr_0.4TiO₃ thin films deposited on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition were investigated. X-ray diffraction patterns revealed a (2 1 0) preferred orientation for all the films. With rising substrate temperature from 650 °C to 700 °C, the crystallinity and crystal grain size of the films increase, the relative dielectric constant increases, but the dielectric losses have not obvious difference. The film deposited at 350 °C and annealed at 700 °C has strongly improved roughness and dielectric permittivity compared with the film only deposited directly at 700 °C. Three distinct relaxation processes within tan(δ) were found for the Ba_xSr_1?xTiO₃ film: a broadened process of the film relaxation, an intermediate peak which originates from Maxwell–Wagner–Sillars polarization, and an extremely slow process ascribed to leak current. The complex dielectric permittivity and loss can be fitted by an improved Cole–Cole model corresponding to a stretched relaxation function.     

Microwave enhanced sintering of tape-cast ferroelectric films

Porous Pb(Zr_xTi_1−x)O₃(PZT) thick films that had been prepared by tape casting were densified by microwave energy. The microwave absorption effect is substantially correlated with the film thickness. In microwave-processed PZT thick films, rapid particle necking causes densification with no grain growth nearly in a short treatment time of 20 min at 820 °C. The same porous PZT thick films are difficult to densify in a conventional process. A 30-μm-thick PZT thick film has a pure perovskite structure. Self-supporting PZT thick films with a crack-free and uniform microstructure formed in a microwave process have larger coercive field than conventionally processed bulk PZT. The polarization, 14 μC/cm², of PZT thick films in a microwave process exceeds that, 7 μC/cm², of PZT bulk formed in a conventional process.     

Laser-transfer processing of functional ceramic films

Pulsed excimer laser irradiation through a UV-transparent fabrication substrate has been successfully employed to separate PZT thick films from their sapphire host substrates. Films of 20 μm in thickness were prepared by a hybrid particle sol–gel synthesis route. The microstructure, morphology and ferroelectric properties of the thick films after laser-transfer have been examined. Films were irradiated with a 248 nm, 15 ns pulse, and transferred to a platinised silicon substrate (Pt/Ti/SiO₂/Si). A laser fluence of 250 mJ/cm² was sufficient to delaminate the original PZT/sapphire interface. The pulsed energy density used here is lower than reported by other groups utilising a laser-transfer process for PZT. This is believed to be due to higher levels of porosity at the film/substrate interface in this study.     

Lead zirconium titanate thin films prepared by thermal annealing of multilayer structures composed of PbO,ZrO2 and TiO2

Lead zirconium titanate [Pb(Zr_xTi_1?x)O₃ or PZT] thin films were prepared by the thermal annealing of multilayer films composed of binary oxide layers of PbO, ZrO₂ and TiO₂. The binary oxides were deposited by metal organic chemical vapor deposition. An interdiffusion reaction for perovskite PZT thin films was initiated at approximately 550 °C and nearly completed at 750 °C for 1 h under O₂ annealing atmosphere. The composition of Pb/Zr/Ti in perovskite PZT could be controlled by the thickness ratio of PbO/ZrO₂/TiO₂ where the contribution of each binary oxide at the same thickness was 1:0.55:0.94. The electrical properties of PZT (Zr/Ti = 40/60, 300 nm) prepared on a Pt-coated substrate included a dielectric constant ?_r of 475, a coercive field E_c of 320 kV/cm, and remnant polarization P_r of 11 μC/cm² at an applied voltage of 18 V.     

Preparation of ultrathin PZT films by a chemical solution deposition method from a polymeric citrate precursor

Ultrathin PZT film was prepared using a chemical solution deposition method from polymeric citrate precursors. The PZT solution was spin-coated on an amorphous silica layer formed on a Si(1 0 0) substrate. The films were thermally treated from the substrate side with a low heating rate (1°/min) up to 700 °C and finally annealed for 10 h. Ultrathin PZT films without microstructural instability were prepared in spite of high temperature and long annealing time. AFM and HRTEM investigations revealed the formation of a well-developed dense microstructure consisting of spherical crystallites (4–7 nm). Low roughness (2.2 nm) of a ～26 nm thick layer was obtained for a two-layered PZT film. The grazing incidence X-ray diffraction (GIXRD) measurements confirmed the polycrystalline structure of ultrathin PZT films. Also, GIXRD and electron energy dispersive X-ray (EDS) analysis showed that compositional variations were smaller than expected, in spite of the long annealing time.     

Enhanced ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3–0.05PbTiO3 thin films with Pb(Zr0.52,Ti0.48)O3 seed layer

0.95Pb(Sc_0.5Ta_0.5)O₃–0.05%PbTiO₃ (PSTT5) thin films with and without a Pb(Zr_0.52,Ti_0.48)O₃ (PZT52/48) seed layer were deposited on Pt/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering. X-ray diffraction patterns indicate that the PSTT5 film with a PZT52/48 seed layer exhibited nearly pure perovskite crystalline phase with highly (4 0 0)-preferred orientation. Piezoresponse force microscopy observations reveal that a large out-of-plane spontaneous polarization exists in the highly (4 0 0)-oriented PSTT5 thin film. The PSTT5/PZT(52/48) possesses good ferroelectric properties with large remnant polarization P_r (12 μC/cm²) and low coercive field E_c (110 kV/cm). Moreover, The perfect butterfly-shaped capacitance–voltage characteristic curve and the relative dielectric constant as high as 733 is obtained in this PSTT5 thin film at 100 kHz.     

Reduced leakage current and improved multiferroic properties of 0.5((1−x)BLPFO-xPZT)-0.5PVDF composite films

0.5((1−x)Bi_0.8La_0.1Pr_0.2FeO₃ (BLPFO)-xPb(Zr_0.52Ti_0.48)O₃ (PZT))-0.5Polyvinylidene difluoride (PVDF) composite films with x variations 0.25, 0.40 and 0.50 were synthesized using two step mixing, followed by hot pressing. The structural, microstructural, dielectric, magnetic, ferroelectric and magnetodielectric properties of composite films have been systematically investigated. The measurement of the dielectric properties at 1 kHz shows that the dielectric loss (tan δ) decreases with increasing the volume fraction of PZT. The value of maximum room temperature ε_r ~78 and low tan δ ~0.061 for 0.5((1−x)BLPFO-xPZT)-0.5PVDF composite film with x=0.50 suggests its usefulness for capacitor applications. For predictions of effective dielectric constant of composite films experimental data were fitted with Lichtenecker model. Among all the composite films, the film with x=0.50 was found to exhibit smallest leakage current density ~7×10⁻⁸ A/cm² and hence improved electrical resistivity. The variation of magnetization with temperature indicates the presence of spin glass behavior along with the ferromagnetic component at 5 K. The value of remnant polarization (2P_r) is found to increase with increase of PZT content in composite films. In the present composite films a significant dependence of dielectric constant on magnetic field has been observed, and highest value of magnetodielectric response of 2.85% is observed for composite film with x=0.50.     

Substrate temperature dependent bolometric properties of TiO2−x films for infrared image sensor applications

In this study, we investigated the substrate temperature (T_S) dependent bolometric properties on TiO_2−x films for infrared image sensor applications. The film crystallinity was changed from amorphous to rutile phase with increasing the T_S. The decrement of resistivity with temperature in TiO_2−x test-devices confirms the typical semiconducting property. All the test pattern devices have linear I-V characteristic performance which infers that the ohmic contact was well formed at the interface between the TiO_2−x and the Ti electrode. The resistivity, activation energy (E_a) and the temperature coefficient of resistance (TCR) values of the device samples were decreased up to 200 °C of T_S. The sample deposited at 200 °C had a significantly low 1/f noise parameter and a high universal bolometric parameter (β). However, at the substrate temperature of 250 °C, the E_a, TCR and the 1/f noise values were increased due to increase of the resistivity. The TCR and the 1/f noise values are proportional to the resistivity of TiO_2−x films. As a result, the low resistivity of TiO_2−x sample deposited at 200 °C is a viable bolometric material for uncooled IR image sensors.     

Preparation and ferroelectric properties of (Na0.5Bi0.5)0.94Ba0.06TiO3 thin films deposited on Pt electrodes using LaNiO3 as buffer layer

(Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃ thin films were deposited on Pt/Ti/SiO₂/Si (1 1 1) and LaNiO₃/Pt/Ti/SiO₂/Si (1 1 1) substrates by a sol–gel process. The phase structure and ferroelectric properties were investigated. The X-ray diffraction pattern indicated that the (Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃ thin film deposited on Pt/Ti/SiO₂/Si (1 1 1) substrates is polycrystalline structure without any preferred orientation. But the thin film deposited on LaNiO₃/Pt/Ti/SiO₂/Si substrates shows highly (1 0 0) orientation (f ≥ 81%). The leakage current density for the two thin films is about 6 × 10^?3 A/cm² at 250 kV/cm, and thin film deposited on LaNiO₃/Pt/Ti/SiO₂/Si substrates possessed a much lower leakage current under high electric field. The hysteresis loops at an applied electric field of 300 kV/cm and 10 kHz were acquired for the thin films. The thin films deposited on LaNiO₃/Pt/Ti/SiO₂/Si substrates showed improved ferroelectricity.     

Effect of excess lead on the structural and electrical characteristics of sol-gel synthesized RuO2/Pb(ZrxTi1−x)O3/RuO2

In this study, we investigated the effect of excess lead on the structural and electrical characteristics of lead zirconate titanate [Pb(Zr_xTi_1−x)O₃, PZT] thin films using the sol-gel spin coating method. X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and field-emission transmission electron microscopy were used to study the structural, morphological, chemical, and microstructural features, respectively, of these films as functions of the growth conditions (excess lead concentrations of 10, 20, and 25 mol%). The PZT thin film prepared at the 20 mol% condition exhibited the best electrical characteristics including a lower leakage current of 6×10⁻⁷ A/cm² at an electric field of 50 kV/cm, a larger capacitance value of 1.92 μF/cm² at a frequency of 1 kHz, and a higher remanent polarization of 20.1 μC/cm² at a frequency of 5 kHz. We attribute this behavior to the optimal amount of excess lead in this PZT film forming a perovskite structure and suppressing the reaction of PZT film with RuO₂ electrode.     

Dielectric and optical properties of electroceramic PBZNZT thin films prepared by pulsed laser deposition process

The 0.6[0.94Pb(Zn_1/3Nb_2/3)O₃ + 0.06BaTiO₃] + 0.4[0.48(PbZrO₃) + 0.52(PbTiO₃)], PBZNZT, thin films were synthesized by pulsed laser deposition (PLD) process. The PBZNZT films possess higher insulating characteristics than the PZT (or PLZT) series materials due to the suppressed formation of defects, therefore, thin-film forms of these materials are expected to exhibit superior ferroelectric properties as compared with the PZT (or PLZT)-series thin films. Moreover, the Ba(Mg_1/3Ta_2/3)O₃ thin film of perovskite structure was used as buffer layer to reduce the substrate temperature necessary for growing the perovskite phase PBZNZT thin films. The PBZNZT thin films of good ferroelectric and dielectric properties (remanent polarization P_r = 26.0 μC/cm², coercive field E_c = 399 kV/cm, dielectric constant K = 737) were achieved by PLD at 400 °C. Such a low substrate temperature technique makes this process compatible with silicon device process. Moreover, thus obtained PBZNZT thin films also possess good optical properties (about 75% transmittance at 800 nm). These results imply that PBZNZT thin films have potential in photonic device applications.     

Sintering of nanocrystalline Ta2O5 and ZrO2 films compared to that of TiO2 films

Thin (d = 60 nm/140 nm) nanocrystalline Ta₂O₅ and ZrO₂ films were deposited onto SiO₂ flakes, using a liquid route synthesis. Their sintering behaviour was characterized and compared to that of the corresponding powders and the known equivalent TiO₂ film in terms of grain size, grain growth and layer porosity. The effect of the substrate was noticeable on crystallisation process but not on grain growth. The sintering behaviour was actually dictated by the initial size and the packing of the precipitated grains related to the synthesis of the film.     

Microwave dielectric properties of the (BaxSr1−x)TiO3 thin films on alumina substrate

Barium strontium titanate, (Ba_xSr_1?x)TiO₃ (BST) thin films have been prepared on alumina substrate by sol–gel technique. The X-ray patterns analysis indicated that the thin films are perovskite and polycrystalline structure. The interdigital electrode with 140 nm thickness Au/Ti was fabricated on the film with the finger length of 80 μm, width of 10 μm and gaps of 5 μm. The temperature dependence of dielectric constant of the BST thin films in the range from ?50 °C to 50 °C was measured at 1 MHz. The dielectric properties of the BST thin films were measured by HP 8510C vector network analyzer from 50 MHz to 20 GHz.     

Bottom electrode crystallization of PZT thin films for ferroelectric capacitors

The bottom electrode crystallization (BEC) method was applied to the crystallization of PZT thin films deposited by laser ablation over Si/SiO₂/Ti(Zr)/Pt structures, with the platinum films being deposited at two different temperatures. The results were compared with those obtained by rapid annealing with halogen lamps and furnace annealing. PZT films crystallized over Pt made at lower temperature with Ti adhesion layers tend to have a (1 1 1) preferential orientation, while those deposited on platinum made at higher temperature tend to have a (1 0 0)/(1 1 1) mixed orientation. When Zr adhesion layers are used, the PZT films crystallized over Pt have a preferential (1 0 0) orientation, except for films deposited over Pt made at 500 °C and crystallized with a high heating rate. The ferroelectric properties of the films crystallized with the BEC method are good, being similar to those obtained with the other crystallization methods using the same parameters.     

Effect of La doping on tunable behavior of sol–gel-derived PST thin film

Pb_xSr_1−xTiO₃ and (Pb_0.4Sr_0.6)_1−xLa_2x/3TiO₃ thin films were prepared on ITO/glass substrate by sol–gel technique. The crystalline phase structures of thin films were investigated by XRD. The dielectric properties were measured by LCZ meter. Results show that the perovskite phase was stable in Pb_xSr_1−xTiO₃ thin film. Its lattice constant was found to increase with the increase of x. When Pb/Sr ratio was about 50/50, the transformation of the perovskite phase between cubic and tetragonal took place at room temperature. To ensure better tunability, Pb_0.4Sr_0.6TiO₃ thin film was selected in both paraelectric state (cubic structure) and near the phase transformation point between cubic and tetragonal. The tunability of more than 80% and figure of merit (FOM) of 14.17 were obtained. (Pb_0.4Sr_0.6)_1−xLa_2x/3TiO₃ was also prepared as La-doped thin film. Its dielectric constant was decreased below x = 0.4 and then increased above x = 0.4 with the increase in x. The inharmonic coefficient depicting ability of tunability of (Pb_0.4Sr_0.6)_1−xLa_2x/3TiO₃ thin film kept constant due to the changeable shape of the crystal cell under electric field at a fixed temperature below x = 0.4, which is in good agreement with Johnson's theory. And the coefficient reveals a distinctive variable because of easily changeable shape under different bias above x = 0.4. The tunability of about 70% and FOM of about 7 were obtained in the (Pb_0.4Sr_0.6)_1−xLa_2x/3TiO₃ thin film.     

Thin-film nanocomposites of diamond-like carbon and titanium oxide; Osteoblast adhesion and surface properties

Thin films of a novel, nanocomposite material consisting of diamond-like carbon and polycrystalline/amorphous TiO_x (DLC-TiO_x, x ≤ 2) were prepared using pulsed direct-current plasma enhanced chemical vapour deposition (PECVD). Results from Raman spectroscopy indicate that the DLC and TiO_x deposit primarily as segregated phases. Amorphous TiO₂ is found to be present on the surface region of the film and there is evidence for the presence of crystalline TiO in the bulk of the film. The hydrophilicity of the DLC-TiO_x films increased with increasing titanium content. Culture studies with human osteoblasts revealed that the differences in three-day cell adhesion properties (count, morphology and area) between DLC and DLC-TiO_x films containing up to 13 at.% Ti were not statistically significant. However, the cell count was significantly greater for the films containing 3 at.% of Ti in comparison to those containing 13 at.% of Ti. A post-plasma treatment with Ar/O₂ was used to reduce the water contact angle, θ, by nearly 40° on the DLC-TiO_x films containing 3 at.% of Ti. A cell culture study found that the osteoblast count and morphology after three days on these more hydrophilic films did not differ significantly from those of the original DLC-TiO_x films. We compare these results with those for SiO_x-incorporated DLC films and evaluate the long-term osteoblast-like cell viability and proliferation on modified DLC surfaces with water contact angles ranging from 22° to 95°.     

Impact of Sr-doping on structural and electrical properties of Pb(Zr0.52Ti0.48)O3 thin films on RuO2 electrodes

In this paper, we investigated the impact of Sr-doping on the structural properties and electrical characteristics of lead zirconate titanate [Pb(Zr_0.52Ti_0.48)O₃, PZT] thin films deposited on RuO₂ electrodes by a sol-gel process and spin-coating technique. We used X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and field-emission transmission electron microscopy to explore the structural, morphological, chemical, and microstructural features, respectively, of these films as a function of the growth condition (strontium doping concentrations varied from 1, 3, and 5 mol%). The PZT thin film processed at the 3 mol% Sr exhibited the best electrical characteristics, including a low leakage current of 2.27×10⁻⁷ A/cm² at an electric field of 50 kV/cm, a large capacitance value of 2.74 μF/cm² at a frequency of 10 kHz, and a high remanent polarization of 37.95 μC/cm² at a frequency of 5 kHz. We attribute this behavior to the optimal amount of strontium in the PZT film forming a perovskite structure and a thicker interfacial layer at the PSZT film-RuO₂ electrode interface.     

Enhanced ferroelectric properties of La-substituted BiFeO3 thin films on LaSrCoO3/Pt/TiO2/SiO2/Si (1 0 0) substrates prepared by the soft chemical method

Bi_0.85La_0.15FeO₃ (BLFO015) thin films were deposited by the polymeric precursor solution on La_0.5Sr_0.5CoO₃ substrates. For comparison, the films were also deposited on Pt bottom electrode. X-ray diffraction data confirmed the substitutions of La into the Bi site with the elimination of all secondary phases under a substitution ratio x = 15% at a temperature of 500 °C for 2 h. A substantial increase in the remnant polarization (P_r) with La_0.5Sr_0.5CoO₃ bottom electrode (P_r ≈ 34 μC/cm²) after a drive voltage of 9 V was observed when compared with the same film deposited on Pt substrate. The leakage current behavior at room temperature decreased from 10^?8 (Pt) to 10^?10 A/cm² on (La_0.5Sr_0.5CoO₃) electrode under a voltage of 5 V. The fatigue resistance of the Au/BLFO015/LSCO/Pt/TiO₂/SiO₂/Si (1 0 0) capacitors with a thickness of 280 nm exhibited no degradation after 1 × 10⁸ switching cycles at a frequency of 1 MHz.     

Effect of electrode and substrate on the fatigue behavior of PZT thick films fabricated by aerosol deposition

10 μm-thick lead zirconate titanate (PZT) films with identical LaNiO₃ (LNO) top and bottom electrodes were fabricated on silicon and yttria-stabilized zirconia (YSZ) substrates by aerosol deposition (AD). A Pt electrode was also made for comparison. The dielectric, ferroelectric and fatigue behaviors at different fields were investigated. The PZT films on YSZ/LNO showed the highest dielectric and ferroelectric properties and good fatigue behavior under various fields. PZT films with a Pt electrode also showed good fatigue behavior up to 10⁸ cycles as thicker film can minimize the effect of defect entrapment near the interface.