Electrochemical reduction of silicon chloride in a non-aqueous solvent

The electrodeposition of silicon was engaged in propylene carbonate containing SiCl₄ and tetrabutylammonium chloride. Cyclic voltammograms showed the possibility of electrodeposition of Si at −3.6 V versus Pt quasi-R.E. Potentiostatic electrolysis yielded a porous and white deposit with the thickness of 50 μm at −3.6 V for 1 h. Raman spectroscopic analysis of the deposit immersed in pure propylene carbonate soon after the electrolysis confirmed that the electrodeposit was amorphous silicon. Moreover, EDX and XPS results indicated that the electrodeposited Si was so active that it was oxidized immediately in the air. Finally, the electrodeposition process of Si film is discussed based on chronopotentiometry and chronoamperometry.     

Effect of SiC addition on the formation of ZrB2 through reaction of ZrO2, boric acid (H3BO3) and carbon black

ZrB₂-SiC powders with different amounts of SiC (10–30 wt%) were in-situ synthesized at 1600 °C for 90 min in Ar atmosphere. Effects of SiC addition on the formation of ZrB₂ via carbothermal reduction of ZrO₂, H₃BO₃ and carbon black were investigated. The samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectrometer (EDS) and transmission electron microscope (TEM). The grain size of ZrB₂ in final powders decreased with adding SiC. Columnar ZrB₂ and granular SiC were combined interactively when the SiC content was 25 wt%. Layer-like hexagonal SiC was obtained in the product containing 30 wt% SiC, whereas the ZrB₂ grain growth was strongly inhibited. Furthermore, the growth mechanisms of ZrB₂ and SiC were studied.     

Reactive hot pressing of ZrB2-based composites with changes in ZrO2/SiC ratio and sintering conditions. Part I: Densification behavior

ZrB₂–SiC–ZrO₂ composites were hot pressed in order to investigate the effects of adding nano-sized ZrO₂ particles as well as the hot pressing parameters on the densification behavior of ZrB₂–SiC composites. An L9 orthogonal array of the Taguchi method was employed to study the significance of each parameter such as the sintering temperature, time, the applied external pressure, and ZrO₂/SiC volume ratio on the densification process. The statistical analyses revealed that among the mentioned parameters, the hot pressing temperature had a great influence over the densification. By being hot pressed at 1850 °C for 90 min under 16 MPa, fully dense ZrB₂-based composites were obtained. The relative density of the composites decreased at first and then enhanced as a function of ZrO₂/SiC ratio. Microstructural investigation of the fracture surfaces of the composites, which was carried out using the SEM analysis, showed the formation of new phases on the surfaces of SiC grains. The EDS and XRD analyses identified the ZrC as the newly formed interfacial phase due to the reaction between nano-ZrO₂ and SiC. The ZrC acted as an adhesive interphase between the ZrB₂/SiC grains, which could assist the sintering process.     

Synthesis of SiC nanowires by a simple chemical vapour deposition route in the presence of ZrB2

The SiC nanowires (NWs) were fabricated by a simple chemical vapour deposition (CVD) method at high temperature using Si, phenolic resin, and ZrB₂ powder. The morphologies of the fabricated SiC NWs included SiC/SiO₂ chain-beads and straight wires with core-shell structures. The fabricated SiC NWs were micrometre-to-millimetre in length, with chains 100–300 nm in diameter and beads with diameters of less than 1 μm. The core-shell-structured SiC NWs consisted of crystalline SiC cores and thin amorphous SiO₂ shells. SiC crystals grew in the [111] direction governed by a vapour-solid (VS) mechanism. The added ZrB₂ promotes the generation of gaseous species at higher gas pressures, which contributes to the formation of SiC NWs by CVD. The fabricated SiC NWs exhibited good photoluminescence properties due to many stacking faults and the presence of amorphous SiO₂.     

Influence of SiC on phase and microstructure of ZrB2 powders synthesized via carbothermal reduction at different temperatures

ZrB₂ powders were successfully prepared via carbothermal reduction of ZrO₂ with H₃BO₃ and carbon black under flowing argon. By introducing SiC species into reaction mixtures, the effects of SiC addition on phase composition and morphology of ZrB₂ powders thermally treated at different temperatures were investigated. The resultant samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive spectrometer (EDS). The highly pure ZrB₂ with the mean size of 5?µm could be obtained at 1600?°C for 90?min and the grains presented columnar shapes. After addition of SiC, ZrB₂ revealed relatively better crystallinity and finer particle size. Regular columnar ZrB₂ grains ranging from 1 to 2?µm were seen existing after reaction at 1500?°C for 90?min.     

High temperature erosion behavior of spark plasma sintered ZrB2-SiC composites

Damage of structural components of hypersonic vehicles by atmospheric particles demands thorough understanding on their wear behavior. In the present work, dense ZrB₂-SiC (10, 20, and 30 vol%) composites are prepared by spark plasma sintering at 55 MPa in two stages: 1400 °C for 6 min followed by 1600 °C for 2 min. With increase in SiC content, microstructures of sintered composites reveal strongly bonded ZrB₂ grains with SiC particles. A combination of maximum hardness of 23 GPa, elastic modulus of 398 GPa and fracture toughness of 5.4 MPa m^1/2 are obtained for the composite containing 30 vol% SiC particles. It is found that cracks are bridged or deflected by SiC particles in the composites. When the composites are subjected to SiC particle erosion at 800 °C, a 14% decrease in erosion rate is obtained with increase in SiC content from 10 to 30 vol%. The formation of large extent of boro-silicate rich viscous surface on eroded surfaces is attributed to reduced fracture or removal of ZrB₂ grains of the composites with increased SiC content.     

Synthesis of ZrB2-SiC powders in one-step reduction process

ZrB₂-SiC composite powders were synthesized through one-step reduction process of ZrO₂, B₄C, carbon black, silicon or silica under flowing argon. Effects of B₄C contents, calcination temperatures and different silicon sources on the phase composition and morphology were investigated. Combining the X-ray diffraction (XRD) results and scanning electron microscope (SEM) images, the spherical ZrB₂-SiC powders ranging from 100?nm to 300?nm would be prepared with silicon at 1500?°C for 60?min when n(B)/n(Zr) was at 2.4. As using silica as the raw material, the obtained ZrB₂ and SiC particles in the powders exhibited different shapes and sizes. The SiC grains were uniformly formed among the ZrB₂ grains.     

Potential-current characteristics in SiC/ZrB2 composite ceramics

ZrB₂/SiC composite ceramics were fabricated to improve the electrical conductive properties of SiC matrix. The debinding and sintering temperatures were determined by computation of Gibbs free energy. As a result, all the samples have the relative density above 99%, and have excellent mechanical and electrical properties. The effects of ZrB₂ content on the microstructure, mechanical and electrical properties were systematically studied. With increasing ZrB₂ content, as-prepared composites show great improvement in their mechanical properties. Importantly, the introduction of ZrB₂ weakened varistor nonlinear characteristic of composite and reduced its resistivity. The reason is the evolution of grain boundary in conductive paths. The sharp decrease of resistivity indicates the formation of percolation paths. The percolation threshold at 1?mA?cm^?2 obtained via percolation model is 10.7963?vol% (19.7098?wt%) ZrB₂. This value is much less than conventional composites, because the percolation path originates from grain boundary breakdown other than continuous conductor chains.     

Combustion synthesis of high-temperature ZrB2-SiC ceramics

The work is dedicated to researching into combustion kinetics and mechanism as well as the stages of the chemical transformations during self-propagating high-temperature synthesis of ZrB₂-SiC based ceramics. Dependences of the combustion temperature and rate on the initial temperature (T₀) have been studied. It has been shown that the stages of the chemical reactions of ZrB₂ diboride and SiC carbide formation do not change within the range of T_0?=?298–700?К. The effective activation energy of the combustion process amounted to 170–270?kJ/mol, from which it has been concluded that chemical interaction through the melt plays a leading role. The stages of the chemical transformations in the combustion wave have been studied by dynamic X-ray diffraction. First, ZrB₂ phase forms from Zr-Si melt saturated with boron, and SiC phase is registered later. The SHS method has successfully been used in order to obtain ZrB₂-SiC composite powders and compact ceramics with a silicon carbide content of 25–75%. The ceramics are characterized by a residual porosity of 1.5%, hardness up to 25?GPa, the elastic modulus of 318?±?21?GPa, elastic recovery of 36% and thermal conductivity of 54.9?W/(m?×?K) at T_room.     

Mechanical properties of sintered ZrB2-SiC ceramics

ZrB₂ ceramics containing 10-30 vol% SiC were pressurelessly sintered to near full density (relative density >97%). The effects of carbon content, SiC volume fraction and SiC starting particle size on the mechanical properties were evaluated. Microstructure analysis indicated that higher levels of carbon additions (10 wt% based on SiC content) resulted in excess carbon at the grain boundaries, which decreased flexure strength. Elastic modulus, hardness, flexure strength and fracture toughness values all increased with increasing SiC content for compositions with 5 wt% carbon. Reducing the size of the starting SiC particles decreased the ZrB₂ grain size and changed the morphology of the final SiC grains from equiaxed to whisker-like, also affecting the flexure strength. The ceramics prepared from middle starting powder with an equiaxed SiC grain morphology had the highest flexure strength (600 MPa) compared with ceramics prepared from finer or coarser SiC powders.     

Combined role of SiC particles and SiC whiskers on the characteristics of spark plasma sintered ZrB2 ceramics

In this research work, the effects of silicon carbide (SiC) as the most important reinforcement phase on the densification percentage and mechanical characteristics of zirconium diboride (ZrB₂)-matrix composites were studied. In this way, a monolithic ZrB₂ ceramic (as the baseline) and three ZrB₂ matrix specimens each of which contains 25 vol% SiC as reinforcement in various morphologies (SiC particulates, SiC whiskers, and a mixture of SiC particulates/SiC whiskers), have been processed through spark plasma sintering (SPS) technology. The sintering parameters were 1900 °C as sintering temperature, 7 min as the dwell time, and 40 MPa as external pressure in vacuum conditions. After spark plasma sintering, a relative density of ~96% was obtained (using the Archimedes principles and mixture rule for evaluation of relative density) for the unreinforced ZrB₂ specimen, but the porosity of composites containing SiC approached zero. Also, the assessment of sintered materials mechanical properties has shown that the existence of silicon carbide in ZrB₂ matrix ceramics results in fracture toughness and microhardness improvement, compared to those measured for the monolithic one. The simultaneous addition of silicon carbide particulates (SiC_p) and whiskers (SiC_w) showed a synergistic effect on the enhancement of mechanical performance of ZrB₂-based composites.     

Influence of silicon carbide addition on the microstructural development of hot pressed zirconium and titanium diborides

The influences of adding SiC on the microstructure and densification behavior of ZrB₂ and TiB₂ ceramics, hot pressed at 1850 °C for 60 min under 20 MPa, were investigated. The sintered samples were characterized by SEM, EDS and XRD methods. A fully dense TiB₂-based ceramic was obtained by adding 30 vol% SiC. The grain size of ZrB₂ or TiB₂ matrices in the final microstructures decreased with increasing SiC content. The XRD analyses, microstructural characterization as well as thermodynamical calculations proved the in-situ formation of TiC in the SiC reinforced TiB₂-based composites. The interfaces between ZrB₂ and SiC grains in the SiC reinforced ZrB₂-based composites were free of any impurities or tertiary interfacial phases such as ZrC. This result was consistent with the X-ray diffraction pattern and thermodynamics.     

Effect of sintering temperature on electrical properties of SiC/ZrB2 ceramics

SiC/20?wt% ZrB₂ composite ceramics were fabricated via pressureless solid phase sintering in argon atmosphere at different temperature. The effect of sintering temperature on microstructure, electrical properties and mechanical properties of SiC/ZrB₂ ceramics was investigated. Electrical resistivity exhibits twice significant decreases with increasing sintering temperature. The first decrease from 1900?°C to 2000?°C is attributed to the obvious decrease of continuous pore channels in as-sintered materials. The second decrease from 2100?°C to 2200?°C results from the improvement of carbon crystallization and the disappearance of amorphous layers enveloping ZrB₂ grains. Additionally, the increase of sintered density with increasing temperature caused greatly advance of flexural strength, elastic modulus and Vickers hardness. But excessive temperature is detrimental to flexural strength because of SiC grain growth.     

Spark plasma sintering and characterization of ZrC-TiB2 composites

ZrC-based composites were consolidated from ZrC and TiB₂ powders by the Spark Plasma Sintering (SPS) technique at 1685 °C and 1700 °C for 300 s under 40-50-60 MPa. Densification, crystalline phases, microstructure, mechanical properties and oxidation behavior of the composites were investigated. The sintered bodies were composed of a (Zr,Ti)C solid solution and a ZrB phase. The densification behaviors of the composites were improved by increasing the TiB₂ content and applied pressure. The highest value of hardness, 21.64 GPa, was attained with the addition of 30 vol% TiB₂. Oxidation tests were performed at 900 °C for 2 h and the formation of ZrO₂, TiO₂ and B₂O₃ phases were identified by using XRD.     

Elevated temperature thermal properties of ZrB2-B4C ceramics

The elevated temperature thermal properties of zirconium diboride ceramics containing boron carbide additions of up to 15 vol% were investigated using a combined experimental and modeling approach. The addition of B₄C led to a decrease in the ZrB₂ grain size from 22 µm for nominally pure ZrB₂ to 5.4 µm for ZrB₂ containing 15 vol% B₄C. The measured room temperature thermal conductivity decreased from 93 W/m·K for nominally pure ZrB₂ to 80 W/m·K for ZrB₂ containing 15 vol% B₄C. The thermal conductivity also decreased as temperature increased. For nominally pure ZrB₂, the thermal conductivity was 67 W/m·K at 2000 °C compared to 55 W/m·K for ZrB₂ containing 15 vol% B₄C. A model was developed to describe the effects of grain size and the second phase additions on thermal conductivity from room temperature to 2000 °C. Differences between model predictions and measured values were less than 2 W/m·K at 25 °C for nominally pure ZrB₂ and less than 6 W/m·K when 15 vol% B₄C was added.     

Investigation of the density and microstructure homogeneity of square-shaped B4C-ZrB2 composites produced by spark plasma sintering method

Square-shaped monolithic B₄C and B₄C-ZrB₂ composites were produced by spark plasma sintering (SPS) method to investigate the effect of 5, 10, 15 vol% ZrB₂ addition on the densification, mechanical and microstructural properties of boron carbide. The relative density of B₄C increased with the increasing volume fraction of ZrB₂ and density differences in different regions of the sample narrowed down. Homogeneous density distribution and microstructure were accomplished with the increasing holding time from 7 to 20 min for the B₄C-15 vol% ZrB₂ composites, and the highest overall relative density was achieved as 99.23%. The hardness and fracture toughness of composites were enhanced with the addition of ZrB₂ compared to monolithic B₄C. The enhancement in fracture toughness was observed due to the crack deflection, crack bridging and crack branching mechanisms. The B₄C-15 vol% ZrB₂ composite exhibited the combination of superior properties (hardness of 33.08 GPa, Vickers indentation fracture toughness of 3.82 MPa.m^1/2).     

In situ hot-pressed ZrB2-based composite with polycarbosilane-derived SiC: Microstructure and mechanical behavior

In this study, a homogenously dispersed finer SiC particles-containing ZrB₂ composite was prepared using nanosized polycarbosilane (PCS) particles-containing ZrB₂ mixture powder, followed by hot pressing. The microstructure of the resulting composite was characterized by field-emission scanning electron microscopy and transmission electron microscopy. The composite microstructure comprised finer equiaxed ZrB₂ and SiC grains. The mechanical behavior of the composite was evaluated using four-point bending test at different temperatures between room temperature (RT) and 1600°C. The results show that the composite exhibited only linear deformation behavior prior fracture at or below 1500°C. However, a trace quantity of nonlinear deformation was observed at 1600°C. In addition, the flexural strength of the composite decreased as the temperature increased from RT to 1200°C, then the strength increased as the temperature raised to 1400°C. Subsequently, the flexural strength remained almost the constant between 1400°C and 1600°C, with a strength of ~760 MPa.     

Electrochemical behavior of carbon electrodes in organic liquid electrolytes containing tetrafluoroborate and hexafluorophosphate anionic species in different non-aqueous solvent systems

Electrochemical behavior of tetrabutylammonium salts containing tetrafluoroborate (BF₄⁻) and hexafluorophosphate (PF₆⁻) anionic species in different non-aqueous solvents had been investigated on glassy carbon (GC), boron-doped diamond (BDD) and Pt electrodes. Though both BF₄⁻ and PF₆⁻ ionic species are considered to be inert, they are found to undergo electrochemical oxidation only on GC electrode rather than BDD and Pt as found out from their anodic peaks in linear sweep and cyclic voltammograms (LSV and CV). The voltammetric peak is influenced by the sweep rate as well as by the concentration of the ionic species and the electron transfer process appears to be diffusion controlled one. The formation of an inhibitory C-F film on the electrode surface during anodic polarization either by potentiostatic or potentiodynamic techniques was clearly established by X-ray photoelectron spectroscopy (XPS) analysis and the charge transfer resistance (θ) is higher under latter conditions than the former. The inhibitory effect of this surface film towards the electron transfer reaction of Fe(CN)₆]⁴⁻/[Fe(CN)₆]³⁻ redox couple using impedance technique reveals that among the high permittivity non-aqueous solvents investigated in this work, CH₃CN shows maximum θ value and produces C-F film of optimum thickness than the others. A direct correlation was also found out from the plot of θ versus peak potential E_p and peak current density (i_p) obtained from LSV. The mechanism of film formation on GC electrode and the absence of such phenomenon on BDD were explained from the product analysis using ¹⁹F nuclear magnetic resonance (NMR) spectra resulting from the constant current electrolysis of BF₄⁻ and PF₆⁻ ionic species on both electrodes in CH₃CN medium.     

Electrochemical studies of moderately boron doped polycrystalline diamond in non-aqueous solvent

The electrochemistry of boron doped diamond is currently an active field of research. In the majority of studies of diamond electrodes it has been reported that the material acts as a semi-metallic electrode. This paper is concerned with studies of moderately doped diamond electrodes in non-aqueous solvent. The results of Mott-Schottky analysis and the cyclic voltammetry of both ferrocene and bis(pentamethylcyclopentadienyl)iron are reported. The influence of surface bond termination, either hydrogen or oxygen, is also considered. It is shown that a response characteristic of a semiconductor can be attained at diamond electrodes immersed in acetonitrile provided that the redox couple does not have a similar energy to the graphitic surface states. The results obtained are discussed in terms of the Gerischer-Marcus model of charge transfer at semiconductor electrodes.     

Preparation and properties of AlN ceramic suspension for non-aqueous gel casting

A non-aqueous gel casting process based on the mixed solvent (ethanol and polyethylene glycol) and low-toxicity N,N-dimethylacrylamide (DMAA) was developed for an aluminum nitride (AlN) ceramic. In the present work, rheological properties of non-aqueous concentrated AlN suspensions were investigated in the presence of mixed solvent, dispersant, milling time, monomer and solid loading, in order to screen for the most suitable experimental conditions to obtain a good rheological behavior for gel casting. The results showed that the 50 vol% slurry with 0.2 wt% dispersant concentration, 2 h milling time, 6 wt% -monomer content, and a solvent ratio of 3:1, can meet the requirements for the casting process of AlN ceramic slurries. After being dried at 100 °C for 1 h, the optimum bulk density and maximum flexural strength of the AlN green bodies were as high as 1.97 g/cm³ and 18.68 MPa, respectively. SEM photographs revealed that the green body had a relative uniform microstructure when the solid loading was 50 vol%. The shrinkage and deformation of shaped sintered bodies prepared through gel casting were small after sintering. The sintering shrinkage, apparent porosity, bulk density and flexural strength were 14.8%, 0.22%, 3.21 g/cm³ and 310 MPa, respectively.