硅片自旋转磨削损伤深度的试验研究

基于自旋转磨削原理的硅片超精密磨床,采用角度抛光法和分步蚀刻法检测了树脂结合剂金刚石砂轮磨削硅片的损伤深度,利用方差分析法研究了砂轮粒度、工作台转速、砂轮进给率和砂轮转速等磨削参数对硅片损伤深度的影响规律.结果表明:磨削参数对硅片损伤深度的影响程度由大到小依次为砂轮粒度、砂轮进给率、砂轮转速和工作台转速.当砂轮的磨粒尺寸从40 μm减小到4 μm时,硅片的损伤深度从16.4 μm逐渐减小至0.8 μm.在一定的范围内,当其它磨削参数不变时,硅片的损伤深度随着砂轮进给率的增大而增大,随着砂轮转速的增大而减小,随着工作台转速的增大而减小.     

氟化钙对单晶硅片磨削用树脂结合剂金刚石砂轮磨削性能的影响

在单晶硅片磨削用树脂结合剂金刚石砂轮中分别添加不同体积分数的固体润滑剂氟化钙(CaF₂),评估其对砂轮表面结构、砂轮磨损量、磨床主轴电流的影响,并测量和计算单晶硅片的表面粗糙度和表面损伤层厚度。结果显示:随CaF₂用量增加,磨床主轴电流、砂轮磨损量、单晶硅片的表面粗糙度值和表面损伤层厚度均下降;当CaF₂体积分数为25%时,主轴电流降至约6.4 A,砂轮磨损量降到每片0.448 6 μm,单晶硅片的表面粗糙度R_a、R_y和R_z分别为0.056 μm、0.382 μm和0.396 μm,表面损伤层厚0.559 6 μm。加入CaF₂固体润滑剂可有效改善树脂金刚石砂轮的性能,提高单晶硅片表面的加工质量,且CaF₂体积分数为25%时效果最佳。      

金刚石砂轮磨削单晶硅片面形变化规律

磨削减薄过程中,硅片表面产生亚表面损伤,其中的残余应力使硅片产生翘曲变形。因此,研究无光磨磨削时的硅片面形变化规律以评价其加工质量。使用金刚石砂轮无光磨磨削厚度400μm和450μm的硅片并测量其面形。将硅片面形数据从中心向边缘沿径向分割成5个环带,分别研究其面形拟合弯曲曲率半径变化。结果显示:从中心区域到边缘区域,硅片的变形量增大,说明无光磨硅片上的残余应力变大,即磨削加工损伤增大。同时,研究还发现晶向对硅片变形有显著影响,〈110〉晶向区变形与〈100〉晶向区变形差异明显。      

树脂金刚石砂轮加工氧化铝陶瓷的磨削工艺试验研究

为改善氧化铝陶瓷的磨削效果,分别使用粒度尺寸125~150 μm和38~45 μm的金刚石制备树脂结合剂砂轮,并进行磨削实验,研究表面粗糙度、材料去除方式和材料去除比例随磨削参数的变化规律,观察并分析氧化铝陶瓷磨削后的表面微观形貌。结果表明:氧化铝陶瓷的表面粗糙度可以达到R_a 0.418 μm,材料去除比例可达到95%;用粒度尺寸38~45 μm的金刚石制备的树脂结合剂砂轮在切深≤ 2 μm,工件移动速度为0.15 m/min加工时,材料由延性域的塑性去除转变为脆性去除。优化后的加工工艺为先以磨料粒度尺寸125~150 μm的树脂金刚石砂轮在切深为4 μm时进行初步加工,再用磨料粒度尺寸38~45 μm的树脂金刚石砂轮进行光磨,可以兼顾高效与精密两方面的要求。      

陶瓷结合剂金刚石砂轮组织结构对其性能的影响

研究单晶硅片磨削用陶瓷结合剂金刚石砂轮的组织结构对砂轮性能的影响,评估砂轮组织结构对砂轮磨损速率、磨床主轴电流、磨削后的单晶硅片表面粗糙度及其表面形貌的影响。试验结果显示:主轴电流随着砂轮组织中孔隙率的增加呈现下降趋势,从最高的7.0 A降低至6.3 A;砂轮的磨损速率则表现出相反的规律,气孔率最大的砂轮的磨损速率是最小的砂轮的近2倍,分别为2.525 2 μm/片和1.423 8 μm/片;砂轮组织结构对磨削后工件的表面粗糙度影响不大,工件的表面粗糙度R_a值分别为7.67、7.47和7.37 nm;但当气孔孔径过大、孔壁变薄时,会造成磨削工件表面出现深划痕,导致硅片磨削质量恶化。      

镍-硼/金刚石超薄切割片的制备与性能

在氨基磺酸镍体系电镀液中添加不同浓度的三甲胺硼烷(TMAB),在阴极自旋转状态下利用复合电沉积方法制备不同质量分数的硼的镍-硼/金刚石切割片,探究镀液中不同质量浓度的TMAB对切割片晶体结构、硬度、耐磨性的影响。结果表明:阴极自旋转状态下制备的镍-硼/金刚石切割片中金刚石分布均匀;随TMAB质量浓度增加,镀层的晶粒尺寸减小、硬度增加、耐磨性提高。当TMAB质量浓度为3.0 g/L时,镀层基质金属的晶粒尺寸最小为6.84 nm,硬度最大为2 453.6 HV,磨损量最小为1.7×10-2 mm3,磨损宽度最小为665.4 μm。用厚度为28.3 μm的镍-硼/金刚石切割片切割(111)晶面的N型单晶硅片,硅片切割槽宽度为35.3 μm,切缝比为1.25,最大崩边尺寸为3.1 μm。      

金刚石因素对砂轮切割性能的影响研究

以滤光片切割为例,基于自制金属结合剂砂轮,研究金刚石的粒度尺寸、浓度、强度等因素对砂轮切割性能（速度,崩口和寿命）的影响。结果表明:切割速度随金刚石粒度尺寸增大,呈先增大后减小的趋势,且当金刚石粒度尺寸为7~14 μm时,切割速度达到最大值10 mm/s;用高强度金刚石制备的砂轮具有更高的切割速度。另一方面,提高金刚石粒度尺寸和浓度以及采用高强度金刚石可以在一定程度上提高砂轮寿命。合理的金刚石浓度范围为35%~50%,超过该浓度,切割滤光片时的崩口明显增大。      

电镀金刚石砂轮

发明简介 本发明为用电化学法即电镀法制作金刚石砂轮，包括金刚石修整砂轮，磨削或切削用金刚石砂轮。砂轮制作过程如下：砂轮工作层含有金刚石磨料和填料，金刚石磨料和填料被金属结合剂粘结在基体上，金属结合剂的厚度低于金刚石磨粒高度的1／2；用机械法去掉填料；再次用金属结合剂把金刚石磨粒粘结，粘结厚度如要求所示。发明中所用填料尺寸是金刚石磨粒尺寸的1．5～5.0倍。本发明简化了电镀金刚石砂轮的制作过程，并且使金刚石浓度可以调节。     

精磨玻璃t-BMI金刚石砂轮的研究

提高砂轮寿命和磨削效果是树脂结合剂金刚石砂轮制造研究的关键问题、本课题采用烯丙基、环氧树脂及丁晴橡胶对双马来酰亚胺树脂改性增韧，得到了具有耐热温度较高，韧性良好，成型工艺性能稳定等特点的增韧双马来酰亚胺(t—BMI)热固性树脂；用该结合剂研制出的玻璃磨边机专用t—BMI金刚石精磨砂轮磨削效果好，砂轮使用寿命长，能消除磨削时的玻璃崩边现象，明显提高玻璃的表面质量，可替代直边机或斜边机上的同类进口砂轮。     

造孔剂含量对树脂结合剂硅片减薄砂轮磨削性能的影响

为改善硅片背面减薄效果,在树脂结合剂硅片减薄砂轮里添加造孔剂。通过体积密度测试、扫描电镜观察和磨削实验,研究造孔剂含量对树脂结合剂砂轮结构和磨削性能的影响。结果表明:随着造孔剂体积分数增加、投料比降低,砂轮内部孔隙率增大;且磨削实验证明造孔剂可以提高硅片的表面质量。当造孔剂添加体积分数在10%、体积密度投料比控制在75%时,树脂结合剂硅片减薄砂轮在磨削过程中具有较好的综合磨削性能,磨削出来的硅片表面粗糙度R_a、R_z、R_y值波动范围小,与其他条件下的砂轮磨削的硅片相比,表面一致性好。      

Edge chipping of silicon wafers in diamond grinding

Although diamond grinding is the most commonly used machining technique in silicon wafer thinning, it often induces edge chipping which leads to wafer breakage. This study investigates edge chipping of silicon wafer in diamond grinding. The study correlates edge chipping with the crystallographic orientation and thickness of a silicon wafer, as well as grinding process conditions, such as wheel grit size, grinding mode and feed rate. It identifies edge chipping in terms of critical thickness, geometry and dimensions. The study discusses the mechanisms of edge chipping based on machining mechanics and energy theories. Conclusions are drawn to summarize the study.     

An experimental study of flat fixed abrasive grinding of silicon wafers using resin-bonded diamond pellets

The purpose of this paper is to investigate the effect of the diamond grain size, the wheel rotation speed, the table rotation speed, and the applied pressure in the vertical flat grinding on the surface roughness of silicon wafers using Taguchi orthogonal array design. Besides, the pits and resistivity on the wafers were studied as well. The experiment results showed that the diamond grain size and the wheel rotation speed of the vertical flat grinding for the roughness of wafers obtained are the relatively larger significant contribution. When the smaller diamond grit size, the faster wheel rotation speed, the faster table rotation speed, and the smaller applied pressure in the flat grinding are employed, the traces produced by the grains are denser and the chip thickness and the depth of cut were smaller, which cause the silicon wafer to produce the higher degree of the ductile grinding. This will lead the wafer surface to produce the smaller amount and size of the pits, thereby generating the lower surface roughness. In addition, the center site of the wafer obtained is the smaller amount and size of the pits than the outer of the wafer, which produces the better surface roughness and the lower resistivity.     

纳米金刚石膜真空窗口的制备

使用自制的微波等离子体化学气相沉积装置,以乙醇为碳源在（100）硅表面制备了金刚石膜;然后用浓硝酸和氢氟酸的混合溶液腐蚀硅,制备出金刚石膜窗口。使用场发射扫描电镜（SEM）、X射线衍射、拉曼光谱（Raman）、原子力显微镜（AFM）表征和分析金刚石膜,并以自制的漏气率测量系统测量金刚石膜窗口的漏气率。结果表明:金刚石膜的厚度为15 μm,平均粗糙度值R_a为39.5 nm,晶粒的尺寸大小为30 nm,漏气率为8.8×10-9 Pa·m3/s。      

金刚石膜/硅复合基片的制备工艺研究

通过等离子体喷射法硅衬底制备金刚石的试验,研究了硅片规格、硅片前期预处理、金刚石膜沉积以及后期热处理等对制备复合基片性质和裂纹产生的影响,对各个工序进行优化和改进,确定了制备金刚石膜/硅复合基片最佳的工艺流程.实验结果表明:在硅基片制备的金刚石膜厚度大于20 μm,抛光后金刚石膜表面粗糙度Ra达到5.2 nm,剩余金刚...     

The impact of diamond particles on the susceptibility of silicon chips to flexural fracture

It was investigated in the present work how diamond or silicon particles resulting from wafer-grinding or wafer-dicing influence the susceptibility of silicon chips to flexural fracture. Silicon particles, which result from the grinding or chipping damage of silicon wafers, were found to be unimportant in determining the susceptibility of silicon chips to flexural fracture, regardless of the size of the particles. However, diamond particles resulting from the wearing-off of a diamond-embedded grinding wheel, were found to have a serious impact on chip cracking potential under a fixed flexural load of 20 N. When the diamond particles have a diameter of about 12 μm, corresponding to the maximum size of diamond particles embedded in the grinding wheel, they result in deep defects which cause preferential sites for crack initiation during three point bending. On the other hand, when the diamond particles have a diameter much smaller than 8 μm, they are unable to cause defects leading to crack initiation. Instead, such small diamond particles result in chip cracking failure only under the limited condition where they cause defect lines running parallel to the orientation of grinding marks on the back surface of chips and are subjected to maximum biaxial tension under a bending load Polishing was very effective for the minimization of interaction between diamond particles (smaller than 8μm) and grinding marks. On the other hand, in a case of large diamond particles which cause defects deeper than 6μm (corresponding to 3% of total chip thickness), polishing was not so effective. Thus, chip cracking failure under a flexural load is suppressed most effectively by the proper control of the maximum size of the diamond particles embedded in the grinding wheel.     

大尺寸硅片自旋转磨削运动分析及仿真

本文利用数学矩阵方法,建立大尺寸硅片自旋转磨削运动的理论模型,研究了砂轮半径、硅片和砂轮旋转速度、旋转方向等因素的选择及各因素对磨削轨迹的影响,同时还研究了磨粒合成运动速度的变化规律。研究结果表明,随着砂轮半径的增大,磨削轨迹的曲率减小,选用较小直径砂轮将更有利硅片表面质量的提高。当转速比i大于零,随着i值的增大,磨削轨迹的曲率逐渐减小。在转速比i小于零的情形,当转速比i=-2时,磨削轨迹曲率为0,磨削轨迹的形状接近一条直线。磨粒合成运动速度随砂轮转速和硅片转速的增大而增大。