共查询到20条相似文献,搜索用时 93 毫秒
1.
A. P. Danilova A. N. Imenkov N. M. Kolchanova V. V. Sherstnev Yu. P. Yakovlev S. Civis 《Semiconductors》1999,33(12):1322-1327
The current dependence of the output frequency of InAsSb/InAsSbP diode lasers at wavelengths near 3.6 μm is studied. It is
found that in these lasers the number of lasing modes can be reduced without introducing crystallographic defects. It is shown
that the photon momentum aids in suppressing the spectral modes closest to the dominant mode. Two-mode laser spectroscopy
is done over an interval of 2 cm−1 for two gases, N2O and CH3Cl.
Fiz. Tekh. Poluprovodn. 33, 1469–1474 (December 1999) 相似文献
2.
The characteristic features of the continuous-wave lasing spectra near 3.3 μm of multimode InAsSbP/InAsSb/InAsSbP double-heterostructure
diode lasers are shown. The observation of mode switching to longer and shorter wavelengths at cryogenic temperatures is reported.
It is shown that suppression of the longitudinal side modes closest to the main mode results in large mode jumps in energy
during mode tuning by current. The characteristics which were observed are explained by gain spectrum inhomogeneity due to
spectral hole burning in narrow-gap semiconductors. The intraband charge-carrier relaxation times in the active region are
estimated.
Fiz. Tekh. Poluprovodn. 39, 1139–1144 (September 1998) 相似文献
3.
M. Aidaraliev N. V. Zotova S. A. Karandashev B. A. Matveev M. A. Remennyi N. M. Stus’ G. N. Talalakin 《Semiconductors》1999,33(6):700-703
We report on a study characterizing internal losses and the gain in InGaAsSb/InAsSbP diode-heterostructure lasers emitting
in the mid-infrared (3–4 μm). Numerical simulations of the current dependence of the intensity of spontaneous emission above
the laser threshold and of the differential quantum efficiency allowed us to determine the intraband absorption k
0 ≈5.6×10−16 cm2. The cavity-length dependence of the threshold current is used to estimate the internal losses at zero injection current
α
0≈5 cm−1. Calculations of the internal losses at laser threshold showed that they increase more than fourfold when the cavity length
is decreased from 500 μm to 100 μm. The temperature dependence of the differential quantum efficiency is explained on the
assumption that intraband absorption with hole transitions into a split-off band occurs. It is shown that the maximum operating
temperature of “short-cavity” lasers is determined by the intraband absorption rather than by Auger recombination. The internal
losses are shown to have a linear current dependence. The separation of the quasi-Fermi levels as a function of current demonstrates
an absence of voltage saturation of the p-n junction above threshold.
Fiz. Tekh. Poluprovodn. 33, 759–763 (June 1999) 相似文献
4.
A. P. Danilova A. N. Imenkov N. M. Kolchanova S. Civis V. V. Sherstnev Yu. P. Yakovlev 《Semiconductors》2000,34(2):237-242
A report is presented on the development of a single-mode laser based on the InAsSb/InAsSbP double heterostructure and operating
at wavelengths of 3.2–3.3 μm in a temperature range of 12–90 K. The single-mode regime is assumed to be realized due to a
smooth optical waveguide formed across the laser cavity in which the radiation flux oscillates and maintains its oscillations
and intensity. An analysis is made of the effect of the current-induced shifts of the lasing frequency and the peak of the
gain spectrum on the probability of single-mode lasing. Experiments were made on the scanning of OCS, NH3, CH3Cl, and H2O gas media with radiation of the given laser in the frequency range with a record width of 10 cm−1 (104 ?).
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 2, 2000, pp. 243–248.
Original Russian Text Copyright ? 2000 by Danilova, Imenkov, Kolchanova, Civis, Sherstnev, Yakovlev. 相似文献
5.
A. N. Imenkov N. M. Kolchanova P. Kubat K. D. Moiseev C. Civiš Yu. P. Yakovlev 《Semiconductors》2001,35(3):360-364
Current-tunable diode lasers with narrow emission lines for laser spectroscopy in the 3.2–3.4 μm wavelength range are developed.
The lasers, based on an InAsSb/InAsSbP double heterostructure, have a wide-stripe cavity. The wave number increases from 3030
to 3034 cm−1 as the current is raised from 1.5 to 3 times the threshold value at 70 K, while the full width at half-maximum of the laser
line decreases from 18 to 10 MHz. It is demonstrated that the linewidth is determined by fluctuations of the cavity resonance
frequencies as a result of fluctuations in the concentration of nonequilibrium charge carriers.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 3, 2001, pp. 375–379.
Original Russian Text Copyright ? 2001 by Imenkov, Kolchanova, Kubat, Moiseev, Civiš, Yakovlev. 相似文献
6.
A. P. Astakhova T. N. Danilova A. N. Imenkov N. M. Kolchanova Yu. P. Yakovlev 《Semiconductors》2003,37(8):960-970
Physical mechanisms leading to the suppression of instability in the electron-hole plasma under conditions of population inversion
and, thus, promoting single-mode lasing and drive-current-controlled tuning were studied; in particular, nonuniform injection
and spatial oscillations of laser flux were considered. Transient times typical of current-and heat-aided tuning are measured.
The effective time constant is estimated as ∼1 μs for heat-controlled tuning; by contrast, it is at least one order of magnitude
shorter for current tuning. The tuning range does not exceed several angstroms and is as wide as 100 ? in the case of heat-and
current-aided tuning, respectively. A single-mode fast-tunable heterolaser which is capable of operating within the 2.8–3.6
μm wavelength range at 12–120 K and is designed for laser-diode spectroscopy is developed. The results of using the laser
for the detection of absorption spectra in OCS, NH3, CH3Cl, CH4, N2O, and H2O vapors are reported.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 8, 2003, pp. 985–995.
Original Russian Text Copyright ? 2003 by Astakhova, Danilova, Imenkov, Kolchanova, Yakovlev. 相似文献
7.
The leakage current I
p
over the surface of CdxHg1−x
Te-based photodiodes that have a cutoff wavelength of the photosensitivity spectrum of λ=9.8–11.6 μm and are fabricated by
implanting Zn++ ions into the p-type solid solution is investigated. The surface character of the I
p
current is indicated by a coordinate shift of the peak in the sensitivity profile of n
+-p junctions, which is measured in a scanning mode by the beam of a CO2 laser with a wavelength of 10.6 μm, with an increase in voltage U across the photodiode and the shift of spectral characteristics to shorter wavelengths with increasing U.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 7, 2004, pp. 890–895.
Original Russian Text Copyright ? 2004 by Biryulin, Turinov, Yakimov. 相似文献
8.
A. N. Imenkov N. M. Kolchanova P. Kubat S. Civish Yu. P. Yakovlev 《Semiconductors》2000,34(12):1406-1409
The dependence of emission-line broadening on the drive current was studied at 50–80 K for tunable InAsSbP/InAsSb/InAsSbP
double heterostructure lasers operating in the 3.3–3.4 μm spectral region. For a small increase of the injection current I over the threshold current I
th, the line width depends on the I-I
th difference hyperbolically, in accordance with the Schawlow-Townes and Henry theories that assume a homogeneous distribution
of the nonequilibrium carrier concentration across the resonator width. With the current raised to (3–4)I
th, line narrowing ceases and the line starts to broaden with increasing current. The observed line broadening is explained
by the effect of the nonequilibrium carrier concentration gradient between the middle of the resonator and its edges. In tunable
lasers, this gradient increases with current, the lasing wavelength simultaneously decreasing. The minimal width of the lasing
line is 10–20 MHz.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 12, 2000, pp. 1468–1471.
Original Russian Text Copyright ? 2000 by Imenkov, Kolchanova, Kubat, Civish, Yakovlev. 相似文献
9.
T. N. Danilova A. P. Danilova O. G. Ershov A. N. Imenkov M. V. Stepanov V. V. Sherstnev Yu. P. Yakovlev 《Semiconductors》1998,32(2):218-221
We have produced, by using liquid-phase epitaxy, 2.7 to 3.0-μm lasers based on InAsSbP double-heterostructures with different
phosphorus contents in the active and wide-gap regions. The lasers possess threshold current density ∼0.8 kA/cm2 at 77 K and operate in the pulsed mode up to ∼124 K with maximum threshold current density 10–12 kA/cm2. The lasers have a low series resistance ∼0.45 Ω.
Fiz. Tekh. Poluprovodn. 32, 241–244 (February 1998) 相似文献
10.
William J. Lee Yean-Kuen Fang Jyh-Jier Ho Chin-Ying Chen Rung-Ywan Tsai Daoyang Huang Fang C. Ho H. W. Chou C. C. Chen 《Journal of Electronic Materials》2002,31(2):129-135
In this paper, indium tin oxide (ITO) thin films were prepared by unipolar and bipolar direct current (DC)-pulsed magnetron
sputtering in a mixture of argon and oxygen onto unheated glass substrates. The target of ITO with 10 wt.% tin is used. The
influences of polar modes (unipolar and bipolar); output frequencies (0 to 33 kHz); and times and off times on the optical,
electrical, and structural properties of ITO films are investigated. The correlations between the deposition parameters and
the film properties are discussed. It is found that the resistivity with 10−3 Θ-cm and transmittance with ≥90% of amorphous ITO films can be prepared by the reactive bipolar DC-pulsed sputtering with
t
on
−
between 45 μs and 85 μs (i.e., t
on
−
/t
on
+
is 9–17), and t
on
+
, t
off
−
and t
off
+
are constant at 5 μs, 10 μs, and 5 μs, respectively. An optimal condition, based on the polar mode and frequency of reactive-pulsed
sputtering, for obtaining the high transmittance and low resistivity of ITO films is suggested. 相似文献
11.
Pulsed laser deposition and processing of wide band gap semiconductors and related materials 总被引:1,自引:0,他引:1
R. D. Vispute S. Choopun R. Enck A. Patel V. Talyansky R. P. Sharma T. Venkatesan W. L. Sarney L. Salamancariba S. N. Andronescu A. A. Iliadis K. A. Jones 《Journal of Electronic Materials》1999,28(3):275-286
The present work describes the novel, relatively simple, and efficient technique of pulsed laser deposition for rapid prototyping
of thin films and multi-layer heterostructures of wide band gap semiconductors and related materials. In this method, a KrF
pulsed excimer laser is used for ablation of polycrystalline, stoichiometric targets of wide band gap materials. Upon laser
absorption by the target surface, a strong plasm a plume is produced which then condenses onto the substrate, kept at a suitable
distance from the target surface. We have optimized the processing parameters such as laser fluence, substrate temperature,
background gas pressure, target to substrate distance, and pulse repetition rate for the growth of high quality crstalline
thin films and heterostructures. The films have been characterized by x-ray diffraction, Rutherford backscattering and ion
channeling spectrometry, high resolution transmission electron microscopy, atomic force microscopy, ultraviolet (UV)-visible
spectroscopy, cathodoluminescence, and electrical transport measurements. We show that high quality AlN and GaN thin films
can be grown by pulsed laser deposition at relatively lower substrate temperatures (750–800°C) than those employed in metal
organic chemical vapor deposition (MOCVD), (1000–1100°C), an alternative growth method. The pulsed laser deposited GaN films
(∼0.5 μm thick), grown on AlN buffered sapphire (0001), shows an x-ray diffraction rocking curve full width at half maximum
(FWHM) of 5–7 arc-min. The ion channeling minimum yield in the surface region for AlN and GaN is ∼3%, indicating a high degree
of crystallinity. The optical band gap for AlN and GaN is found to be 6.2 and 3.4 eV, respectively. These epitaxial films
are shiny, and the surface root mean square roughness is ∼5–15 nm. The electrical resistivity of the GaN films is in the range
of 10−2–102 Θ-cm with a mobility in excess of 80 cm2V−1s−1 and a carrier concentration of 1017–1019 cm−3, depending upon the buffer layers and growth conditions. We have also demonstrated the application of the pulsed laser deposition
technique for integration of technologically important materials with the III–V nitrides. The examples include pulsed laser
deposition of ZnO/GaN heterostructures for UV-blue lasers and epitaxial growth of TiN on GaN and SiC for low resistance ohmic
contact metallization. Employing the pulsed laser, we also demonstrate a dry etching process for GaN and AlN films. 相似文献
12.
T. N. Danilova A. P. Danilova O. G. Ershov A. H. Imenkov N. M. Kolchanova M. V. Stepanov V. V. Sherstnev Yu. P. Yakovlev 《Semiconductors》1997,31(8):831-834
Diode lasers based on InAsSb/InAsSbP with separate electrical and optical confinement, emitting in the wavelength interval
3–4 μm, are investigated. The lasers attain a higher operating temperature when electrical confinement is created by means
of type-II heterojunctions. Interface Auger recombination is suppressed in lasers of this type, and the experimental current
density is close to the theoretically calculated value for the case of predominant volume Auger recombination at a temperature
of 180–220 K.
Fiz. Tekh. Poluprovodn. 31, 976–979 (August 1997) 相似文献
13.
Wilson De Carvalho Jr. Mario Tosi Furtado Aryton André Bernussi Angelo Luiz Gobbi Mônica Alonso Cotta 《Journal of Electronic Materials》2000,29(1):62-68
We investigated the influence of the growth rate on the quality of zero-net-strained InGaAsP/InGaAsP/InP multiquantum well
structures for 1.55 μm emission grown by low pressure metalorganic vapor phase epitaxy. The samples consisted of fixed compressive
strained wells (ɛ=+1%) and tensile strained barriers (ɛ=−0.5%) grown with different quaternary bandgap wavelengths (λB=1.1–1.4 μm). Using higher growth rates, we obtained for the first time high quality zero net strained multi quantum well
structures, regardless having constant group V composition in the well and barriers. The samples were analyzed by x-ray diffraction,
photoluminescence and atomic force microscopy techniques. The amplitude of surface modulation roughness along [011] direction
decreased from 20 nm to 0.53 nm with increasing growth rate and/or quaternary compositions grown outside the miscibility gap.
A new deep PL broad emission band strongly correlated with the onset of wavy layer growth is also reported. Broad area and
ridge waveguide lasers with 10 wells exhibited low losses (34 cm−1) and low threshold current densities at infinite cavity length (1020 A·cm−2 and 1190 A·cm−2, respectively). 相似文献
14.
S. O. Slipchenko D. A. Vinokurov N. A. Pikhtin Z. N. Sokolova A. L. Stankevich I. S. Tarasov Zh. I. Alferov 《Semiconductors》2004,38(12):1430-1439
Internal optical loss in separate-confinement laser heterostructures with an ultrawide (>1 smm) waveguide has been studied
theoretically and experimentally. It is found that an asymmetric position of the active region in an ultrawide waveguide reduces
the optical confinement factor for higher-order modes and raises the threshold electron density for these modes by 10–20%.
It is shown that broadening the waveguide to above 1 μm results in a reduction of the internal optical loss only in asymmetric
separate-confinement laser heterostructures. The calculated internal optical loss reaches ∼0.2 cm−1 (for λ≈1.08 μm) in an asymmetric waveguide 4 μm thick. The minimum internal optical loss has a fundamental limitation, which
is determined by the loss from scattering on free carriers at the transparency carrier density in the active region. An internal
optical loss of 0.34 cm−1 was attained in asymmetric separate-confinement laser heterostructures with an ultrawide (1.7 μm) waveguide, produced by
MOCVD. Lasing in the fundamental transverse mode has been obtained owing to the significant difference in the threshold densities
for the fundamental mode and higher-order modes. The record-breaking CW output optical power of 16 W and wallplug efficiency
of 72% is obtained in 100-μm aperture lasers with a Fabry-Perot cavity length of ∼3 mm on the basis of the heterostructures
produced.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 12, 2004, pp. 1477–1486.
Original Russian Text Copyright ? 2004 by Slipchenko, Vinokurov, Pikhtin, Sokolova, Stankevich, Tarasov, Alferov. 相似文献
15.
A. N. Imenkov N. M. Kolchanova P. Kubat S. Tsivish Yu. P. Yakovlev 《Semiconductors》2002,36(5):592-598
Current-tunable diode lasers with a narrow emission line (7–10 MHz) were designed on the basis of a InAsSb/InAsSbP heterostructure
for low-temperature (15–60 K) operation within the range of 3.2–3.4 μm. It is shown that the fast modulation of radiation
frequency can be attained only if the current far exceeds the threshold value. This is due to the fact that a smooth optical
waveguide can be formed only if the concentration of nonequilibrium charge carriers at the lateral edges of the cavity is
in sufficient excess over the threshold. It is noted that the current-induced increase in the hole concentration near the
p region due to a reduction in the effective lifetime of the carriers in the lasing mode additionally extends the frequency
tuning range. The absorption spectrum of ammonia is presented within the range from 3232 to 3237 cm−1 as measured with the use of the laser developed.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 5, 2002, pp. 622–628.
Original Russian Text Copyright ? 2002 by Imenkov, Kolchanova, Kubat, Tsivish, Yakovlev. 相似文献
16.
The far-IR transmission and photoconductivity in the semimagnetic alloys p-Hg1−x
MnxTe (x=0.20–0.22) at temperatures 2–7 K were investigated at fixed frequencies of optically pumped molecular lasers in the region
49–311 μm. We report the observation of photoexcitation of acceptors from the ground into excited states under conditions
when the direct interaction of the magnetic moments of the manganese ions becomes substantial and results in the formation
of a spin-glass phase. It was found that the internal field produced by the spontaneous and external polarizations of the
magnetic moments of the Mn2+ ions in the spin-glass temperature range influences the energy spectrum of acceptors in a magnetic field.
Fiz. Tekh. Poluprovodn. 32, 450–452 (April 1998) 相似文献
17.
Majid Zandian J. D. Garnett R. E. Dewames M. Carmody J. G. Pasko M. Farris C. A. Cabelli D. E. Cooper G. Hildebrandt J. Chow J. M. Arias K. Vural Donald N. B. Hall 《Journal of Electronic Materials》2003,32(7):803-809
We report on Hg1−xCdxTe mid-wavelength infrared (MWIR) detectors grown by molecular-beam epitaxy (MBE) on CdZnTe substrates. Current-voltage (I-V)
characteristics of HgCdTe-MWIR devices and temperature dependence of focal-plane array (FPA) dark current have been investigated
and compared with the most recent InSb published data. These MWIR p-on-n Hg1−xCdxTe/CdZnTe heterostructure detectors give outstanding performance, and at 68 K, they are limited by diffusion currents. For
temperatures lower than 68 K, in the near small-bias region, another current is dominant. This current has lower sensitivity
to temperature and most likely is of tunneling origin. High-performance MWIR devices and arrays were fabricated with median
RoA values of 3.96 × 1010 Ω-cm2 at 78 K and 1.27 × 1012 Ω-cm2 at 60 K; the quantum efficiency (QE) without an antireflection (AR) coating was 73% for a cutoff wavelength of 5.3 μm at
78 K. The QE measurement was performed with a narrow pass filter centered at 3.5 μm. Many large-format MWIR 1024 × 1024 FPAs
were fabricated and tested as a function of temperature to confirm the ultra-low dark currents observed in individual devices.
For these MWIR FPAs, dark current as low as 0.01 e−/pixel/sec at 58 K for 18 × 18 μm pixels was measured. The 1024 × 1024 array operability and AR-coated QE at 78 K were 99.48%
and 88.3%, respectively. A comparison of these results with the state-of-the-art InSb-detector data suggests MWIR-HgCdTe devices
have significantly higher performance in the 30–120 K temperature range. The InSb detectors are dominated by generation-recombination
(G-R) currents in the 60–120 K temperature range because of a defect center in the energy gap, whereas MWIR-HgCdTe detectors
do not exhibit G-R-type currents in this temperature range and are limited by diffusion currents. 相似文献
18.
A. I. D’Souza J. Bajaj R. E. De Wames D. D. Edwall P. S. Wijewarnasuriya N. Nayar 《Journal of Electronic Materials》1998,27(6):727-732
Mid wavelength infrared p-on-n double layer planar heterostructure (DLPH) photodiodes have been fabricated in HgCdTe double
layers grown in situ by liquid phase epitaxy (LPE), on CdZnTe and for the first time on CdTe/sapphire (PACE-1). Characterization of these devices
shed light on the nature of the material limits on device performance for devices performing near theoretical limits. LPE
double layers on CdZnTe and on PACE-1 substrates were grown in a horizontal slider furnace. All the photodiodes are p-on-n
heterostructures with indium as the n-type dopant and arsenic the p-type dopant. Incorporation of arsenic is via implantation
followed by an annealing step that was the same for all the devices fabricated. The devices are passivated with MBE CdTe.
Photodiodes have been characterized as a function of temperature. R0Aimp values obtained between 300 and 78K are comparable for the two substrates and are approximately a factor of five below theoretical
values calculated from measured material parameters. The data, for the PACE-1 substrate, indicates diffusion limited performance
down to 110K. Area dependence gives further indications as to the origin of diffusion currents. Comparable R0Aimp for various diode sizes indicates a p-side origin. R0A and optical characteristics for the photodiodes grown on lattice-matched CdZnTe substrates and lattice mismatched PACE-1
are comparable. Howover, differences were observed in the noise characteristics of the photodiodes. Noise was measured on
50 × 50 μm devices held under a 100 mV reverse bias. At 110K, noise spectrum for devices from the two substrates is in the
low 10−15 A/Hz1/2 range. This value reflects the Johnson noise of the room temperature 1010 Ω feedback resistor in the current amplifier that limits the minimum measurable noise. Noise at 1 Hz, −100 mV and 120K for
the 4.95 μm PACE-1 devices is in the 1–2 × 10−14 A/Hz1/2, a factor of 5–10 lower than previously grown typical PACE-1 n+-on-p layers. Noise at 120K for the 4.60 μm PACE-1 and LPE on CdZnTe was again below the measurement technique limit. Greatest
distinction in the noise characteristics for the different substrates was observed at 163K. No excess low frequency noise
was observed for devices fabricated on layers grown by LPE on lattice-matched CdZnTe substrates. Photodiode noise measured
at 1Hz, −100 mV and 163K in the 4.60 μm PACE-1 layer is in the 1–2×10−13 A/Hz1/2, again a factor of 5–10 lower than previously grown PACE-1 n+-on-p layers. More variation in noise (4×10−13−2×10−12 A/Hz1/2) was observed for devices in the 4.95 μm PACE-1 layer. DLPH devices fabricated in HgCdTe layers grown by LPE on lattice-matched
CdZnTe and on lattice-mismatched PACE-1 have comparable R0A and quantum efficiency values. The distinguishing feature is that the noise is greater for devices fabricated in the layer
grown on lattice mismatched substrates, suggesting dislocations inherent in lattice mismatched material affects excess low
frequency noise but not zero bias impedance. 相似文献
19.
V. E. Kudryashov S. S. Mamakin A. N. Turkin A. É. Yunovich A. N. Kovalev F. I. Manyakhin 《Semiconductors》2001,35(7):827-834
Luminescence spectra and quantum yield in light emitting diodes (LEDs) based on InGaN/AlGaN/GaN heterostructures with multiple
quantum wells (MQWs) were studied in the range of currents J=10−6–10−1 A. Minor spread in the quantum yield at operating currents (±15% at J≈10 mA) was observed in these LEDs, which were fabricated by Hewlett-Packard. The spread is due to differences in the current
and voltage dependences of the diode emission intensity, caused by differences in the charged center distribution across the
space-charge region (SCR) of the structures and in the role of the tunnel current component at low voltages. In the diodes
with a thin (≲120 nm) SCR, a tunnel emission band was observed for J≲100 μA; the peak energy of this band ℏωmax=1.92–2.05 eV corresponds to the voltage applied. At low currents (J=0.05–0.5 mA), the spectral position of the main peak ℏωmax=2.35–2.36 eV is independent of the voltage and is determined by the radiative transitions between the localized states. At
J>1 mA, this band shifts with the current (ℏωmax=2.36–2.52 eV). Its shape corresponds to the model for the occupation of states in the two-dimensional energy band tails,
which are caused by the microscopic potential fluctuations. The four parameters in this model are related to the calculated
energy band diagram of the MQW structure.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 7, 2001, pp. 861–868.
Original Russian Text Copyright ? 2001 by Kudryashov, Mamakin, Turkin, Yunovich, Kovalev, Manyakhin.
Part of this study was reported at the 3rd All-Russia Workshop on Structures and Devices Based on Gallium, Indium, and Aluminum
Nitrides (Moscow State University, 1999); the 3rd International Conference on Nitride Semiconductors (Montpellier, 1999);
and the 4th European Gallium Nitride Workshop (Nottingham, 2000). 相似文献
20.
Transformation of luminescence centers in CVD ZnS films subjected to a high hydrostatic pressure 总被引:8,自引:0,他引:8
N. K. Morozova I. A. Karetnikov V. G. Plotnichenko E. M. Gavrishchuk É. V. Yashina V. B. Ikonnikov 《Semiconductors》2004,38(1):36-41
The cathodoluminescence and optical-transmission spectra of ZnS were analyzed to study the effect of a high hydrostatic gas
pressure (1500 atm at 1000°C) on the equilibrium between intrinsic point defects in zinc sulfide grown by chemical vapor deposition
(CVD) with an excess of zinc. The cathodoluminescence spectra were measured at 80–300 K and excitation levels of 1022 and 1026 cm−3 s−1; the optical-transmission spectra were measured at 300 K in the wavelength range 4–12 μm. It is found that exposure to a
high hydrostatic gas pressure transforms the self-activated emission in the cathodoluminescence spectrum: (i) a new short-wave-length
band appears at 415 nm with its intensity increasing by one to three orders of magnitude; and (ii) the long-wavelength band
that peaks at 445 nm and is observed in as-grown crystals becomes quenched. Simultaneously, the cathodoluminescence band peaked
at 850 nm and related to vacancies V
S is no longer observed after high-pressure treatment. These effects are attributed to a partial escape of excess zinc (Zni) from crystals and additional incorporation of oxygen into lattice sites (OS). A doublet band I
1, which peaked at ∼331–332 nm at 80 K and at ∼342–343 nm at 300 K and is related to excitons bound to acceptor levels of oxygen
centers, was observed. This band is found to be dominant in the cathodoluminescence spectrum at an excitation level of 1026 cm−3 s−1. Traces of the ZnO phase are apparent after the high-pressure treatment in both the cathodolumi-nescence spectra (the bands
at 730 and 370 nm) and the transmission spectra (narrow bands in the region of 6–7 μm).
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 1, 2004, pp. 39–43.
Original Russian Text Copyright ? 2004 by Morozova, Karetnikov, Plotnichenko, Gavrishchuk, Yashina, Ikonnikov. 相似文献